:,,, Raman PACS: Jp, Jd, j

Transcript

1 * 1)2) 1) 1) 1) 1) (, ) 2) (, ) ( ; ) Raman, (XLPE).,, 9 kv -, 11 kv,. -, G D, 8 nm, 10 Ω µm 1,,.,,,. XLPE, XLPE. :,,, Raman PACS: Jp, Jd, j 1 (XLPE).,., XLPE,. [1,2],,. [3,4] [5]., 110 kv XLPE, XLPE [6] [7,8] [9] [10].,. Champion Dodd [11],,. Vaughan [12,13] / (LDPE), 15 kv /, LDPE 13.5 kv,. [14], XLPE., XLPE,., XLPE. * ( : ). xuyang@mail.xjtu.edu.cn c 2012 Chinese Physical Society

2 Raman : -,,, 8 nm, ; 11 kv,,., Raman, XLPE, XLPE /110 kv XLPE,, 5 mm. -, (2 ± 0.2)mm, 1 mm, θ = 30, r (5 ± 1)µm. 1. XLPE,.,, 1, XLPE,., XLPE, 2 kv, Raman Raman [12,13] [16]. Raman, :,, [10,15]. IEC60270, 2 pc, 10 pc,. 2,,,,

3 30 C, 50 µm; HR800 Raman, LAS-HN633/17 ( 633 nm, 17 mw) Synapse (CCD) Olympus, LabSpec 5.0, 1 µm. 1.7 mw ( 10%), 1 s 10, kv XLPE, (25 30 C), 20., l(l ), Q max N P kv - [6,8 10] ( 80%) 3(a), 3(b), (c)., 3(b) A, B C. A,, 70 µm min 1,, B,,,, Q max < 10 pc,, 10 pc. C, 18 µm min kv [10,15] ( 4(a)), 4(b), (c)., 78 µm min 1,. 3 9 kv - (a) - ; (b) Q max ; (c) P N

4 4 11 kv (a) ; (b) Q max ; (c) P N XLPE,,. 3(a) -, ( 5),, ( 3(b)), [11 13]. 11 kv ( 6),, [11,13]

5 ( 0 µm 1 µm ) Raman cm 1, sp 2 D G,,,. O 12 µm Raman, cm 1, XLPE Raman XLPE, Raman. Raman, 1.2/50 µs 36 kv, 7 P 1, P 2 P 3 Raman 8. Raman LabSpec 5.0, 1 Raman, P µm P 1 Raman (LDPE), LDPE XLPE, P 1 Raman,. P 3 40 µm P 2 Raman,, P 2 Raman, P 2 Raman, [13]. P 3 Raman, cm 1 LDPE, cm 1, sp 2 D G,., Raman. 5 -, 9 (a). Raman ( 9 (b)) O, O Raman , 1 Raman Raman /cm CH CH CH CH sp 2 D 1580 sp 2 G 7 8 P 1, P 2 P 3 Raman

6 9 - (a) ; (b) LDPE,,,. D G L a. Matthews [17], L a = (C 0 + λ L C 1 ) I G I D, (1), C 0 = 12.6 nm, C 1 = 0.033, λ L (λ L = 633 nm), I G I D G D. (1), O L a 8 nm. Vaughan [13] LDPE Raman D G L a 4 nm, 10 3 Ωcm, 1 10 Ω µm 1. [11], Ω µm 1,,,,, Ω µm 1. [12], XLPE - LDPE 2, 10 Ω µm 1, Ω µm 1, -. Q max < 10 pc ( 3(b)). -,,, - [18,19], [11,20]., 10 pc. 10 O Raman 6, 11 (a). Raman ( 11 (b)) S, S Raman , 11 kv ( 0 µm 1 µm ) Raman LDPE,, Raman,,, S 15 µm Ra

7 man. Raman D G,,,.,,,,.,. 11 (a) ; (b) C [21], 13 (b), C c, C b. [21] Q, C b l : Q = C b U c = ε 0 ε r S L l E bl, (2) 12 S Raman, U c, ε 0, ε r XLPE, S, L -, E b. (2), 3.3 dq dt = K dl (L l) 2 dt, (3), Raman, XLPE., ( ), 13 (a). C c C b C c C b 13 (a) ; (b)

8 K = ε 0 ε r LSE b. (3),,, dl/dt > 0, Q l ( - ),,. A ( 3 (b)),,,,. B ( 3 (b)),,, 10 pc, [12],. 14(a), 14 (b), R.,, l, dl/dt < 0, (3), B, Q, 10 pc. (5),, -. Champion [22], E tip l 16, U.,, de tip /dt > 0, Q. 15 (a) ; (b) 16 E tip l 14 B (a) ; (b) C, 10 pc, 15 (a), 15 (b)., Q = C c U c = ε 0 ε r S l E tipl, (4) E tip. (4), dq dt = ε 0S de tip. (5) dt 4, Raman, XLPE., XLPE. -,,,,, Raman 8 nm,

9 .,,,,,. XLPE, XLPE, XLPE. Leicester L. A. Dissado S. J. Dodd. [1] Dissado L A, Fothergill J C 1992 Electrical Degradation and Breakdown in Polymers (London: Peter Peregrinus) [2] Li S T, Zheng X Q 2006 Electrical Treeing in Polymer (Beijing: Mechanical Industry Press) (in Chinese) [, 2006 ( : )] [3] Ishibashi A, Kawai T, Nakagawa S, Muto H, Katakai S, Hirotsu K, Nakatsula T 1998 IEEE Trans. Dielec. Electr. Insul [4] Markey L, Stevens G C 2003 J. Phys. D [5] Boggs S, Densley J, Kuang J 1998 IEEE Trans. Power Delivery [6] Zheng X Q, Xie A S, Li S T 2007 Acta Phys. Sin (in Chinese) [,, ] [7] Xie A S, Li S T, Zheng X Q 2008 Acta Phys. Sin (in Chinese) [,, ] [8] Chen G, Tham C H 2009 IEEE Trans. Dielec. Electr. Insul [9] Zheng X Q, Chen G 2008 IEEE Trans. Dielec. Electr. Insul [10] Chen X R, Xu Y, Xu J, Shi W, Yang W H, Liu Y, Cao X L 2010 High Voltage Eng (in Chinese) [,,,,,, ] [11] Champion J V, Dodd S J 2001 J. Phys. D [12] Vaughan A S, Dodd S J, Macdonald A M 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena (Nashville: IEEE) p548 [13] Vaughan A S, Hosier I L, Dodd S J, Sutton S J 2006 J. Phys. D [14] Zheng X Q, Chen G, Davies A E 2004 Proc. Chin. Soc. Electr. Eng (in Chinese) [, Chen G, Davies A E ] [15] Chen X R, Xu Y, Cao X L, Dodd S J, Dissado L A 2011 IEEE Trans. Dielec. Electr. Insul [16] Ding H Z, Varlow B R 2004 IEEE Electr. Insul. Mag [17] Matthews M J, Pimenta M A, Dresselhaus G, Dresselhaus M S, Endo M 1999 Phys. Rev. B 59 R6585 [18] Fothergill J C 1991 IEEE Trans. Electr. Insul [19] Dissado L A 2002 IEEE Trans. Dielec. Electr. Insul [20] Wu K, Suzuoki Y, Mizutani T, Xie H K 2000 J. Phys. D [21] Qiu C R, Cao X L 2001 Electrical Insulation Test Technology (Beijing: Mechanical Industry Press) (in Chinese) [, 2001 ( : )] [22] Champion J V, Dodd S J, Stevens G C 1994 J. Phys. D

10 Study on conducting characteristics of electrical trees in cross-linked polyethylene cable insulation Chen Xiang-Rong 1)2) Xu Yang 1) Liu Ying 1) Cao Xiao-Long 1) 1) ( State Key Laboratory of Electrical Insulation and Power Equipment, Xi an Jiaotong University, Xi an , China ) 2) ( Department of Materials and Manufacturing Technology, Chalmers University of Technology, Göteborg 41296, Sweden ) ( Received 14 June 2011; revised manuscript received 9 February 2012 ) Abstract The conducting characteristics of two typical electrical trees in cross-linked polyethylene (XLPE) cable insulation are studied by a combination of optical microscopy observation, partial discharge measurement and con-focal Raman spectroscopy analysis. Although they are grown under similar conditions, these two trees display very different shapes. One is a typical branch-pine tree grown at 9 kv, and the other is a branch tree grown at 11 kv. The growth and the partial discharge regularities show obvious differences. The disordered graphitic carbon is condensed in the main tree channels of the branch-pine tree. From the relative intensity of the graphitic carbon G band to D band, the graphitic domain is estimated to be about 8 nm in size. The tree channel resistance per unit length is less than 10 Ω µm 1, which is sufficient to prevent the partial discharge from developing within the tree structure. The branch-pine tree shows the features of the conducting tree. The fluorescence background is observed in the channels of branch tree, which shows the existence of the products of the material degradation, but no disordered graphitic carbon is observed in these tree channels. These tree channels display obvious non-conducting characteristics, which is not sufficient to prevent the continuous effect of the partial discharges. Finally, a single channel growth model is proposed for the conducting and non-conducting trees grown in XLPE cable insulation. Based on the equivalent circuit theory, the growth mechanisms of the two trees with different conducting characteristics in XLPE cable insulation are discussed. Keywords: cross-linked polyethylene cable, electrical tree, conducting characteristics, con-focal Raman spectroscopy PACS: Jp, Jd, j * Project supported by the National Natural Science Foundation of China (Grant No ). xuyang@mail.xjtu.edu.cn