Analysis of Electrowetting Phenomena Based on Energy and Electromechanics
|
|
- Διόνυσος Αλεξανδρίδης
- 6 χρόνια πριν
- Προβολές:
Transcript
1 () (4) (3) () Analysis of Electrowetting Phenomena Based on Energy and Electromechanics γ Fluid γ γ 3 3 S Droplet S 3 Insulator Electrode S 3 κy βϕ () Analytical Solution(4.) () Linear FVMSolution (3) FEM Solution (4) FVM Solution α (deg.) F t -5.0E E E E α (deg.) f ex Fluid Droplet ε / ε 3
2 Introduction
3 Micro Total Analysis System µtotal Analysis System (µtas) Bio-Chip DNA-Chip Lab-On On-a-Chip
4 µ TAS Electrowetting Injection Transportation Mixing Cultivation Caliper Tech. Corp. Separation Detection
5 Merits of Electrowetting Low power consumption Low voltage operation c.f. Electrophoresis: ~ kv Reversible operation Droplet based operation
6 Previous Investigation Lippmann (875) Electrocapiliary. Berge et al. (994) Lippmann Young. Kim et al. (998) Electrowetting Prins et al. (00) Electrocapiliary Science
7 Principle of Electrowetting
8 Nomenclature Nonwetting Dewetting Wetting Droplet Wetting
9 Principle of Electrowetting Lippmann equation: γ = σ V mm Lippmann Young equation: cos α ( V ) = cos α (0) + ε 0ε γ d V d γ α + Electrolyte ε Electrode Insulator V
10 Application (I) Insulator : 700nm Parylene C Hydrophobic material : 00nm Teflon AF Drop size : 0.7 ~.0ml of 00 mm KCl Interval btw. electrodes :.5mm Initiating voltage : 30 ~ 40 V Fast movement above 55 V Average velocity : 3 cm/s
11 Application (I) Flow of a droplet on a -D array Dispensing of droplets
12 Application (I) Rotation Mixing
13 Application (II) M. W. J. Prins et. al., Science, 00.
14 Application (III) Na SO 4 sol. -bromodecane ~ Hydrophilic region Hydrophobic insulator (teflon/saran TM ) mm B. Berge et. al., Eur. Phys. J. E, 000.
15 Application (IV) T. D. Blake et.al., Langmuir, 000.
16 Research Motivation
17 Saturation and Instability 0-4 M KNO 3 solution (5 µl) 75 µm thickness Teflon tape coated Lippmann Young equation cos α ( V ) = cos α (0) + ε 0ε γ d V
18 Motivation Conventional Lippmann Young Equation - EDL effect is not considered - Line Tension is not considered electrolyte air Droplet + electrode insulator cos α ( V ) cos (0) + ε ε γ d 0 = α + EDL + Line Tension V TCL effect
19 Motivation Detailed Analysis on electrostatic interaction near TCL is necessary Deionized water on silanized glass (d = 80 µm); applied voltage: kv F. Mugele et al., Appl. Phys. Lett., 00
20 Motivation M. Vallet, M. Vallade, and B. Berge Limiting phenomena for the spreading of water on polymer films by electrowetting, Eur. Phys. J. B, 999.
21 Objectives EDL (Electrical Double Layer), Line Tension Lippmann Young. TCL EDL. Wetting Tension..
22 Approaches Analytical Energy approach Electro-Mechanical approach Numerical Line tension Wetting tension Experimental Vertical stress Droplet profile (AFM) Saturation, Instability
23 Analytical Approaches Energy Approach Electro-Mechanical Approach Numerical Approach Experimental Approach
24 Total System Fluid γ Zooming γ γ 3 3 S Droplet S 3 S 3 Insulator Electrode
25 System of Interest y S Fluid () γ Droplet () S 3 γ 3 α γ 3 S 3 x d z Insulator (3) S c
26 Energy Approach : Method of Analysis Minimum energy principle of thermodynamics Method of variational calculus
27 Energy Approach y S Free energy of system G tot = G = γ mech + G el S + γ 3S3 + γ 3S3 Ω ε i ϕ + Π( ϕ) tot Fluid () S 3 γ 3 d z γ α γ 3 Insulator (3) Mechanical part Electrostatic part Droplet () S 3 S c x dω c.f. G el = U el TS U el = ε σϕds + dω S ρϕ Ωtot Ω [ Π( ] εϕ ϕ ϕ TS = ) tot dω Ω tot ϕ dω + U
28 Excess Free Energy Excess free energy and line tension G tot ( c) el ( b) el = πr ( γ cosα + γ γ + g + g ) + πrf Excess free energy? 3 3 Excess free energy t electrolyte air λ D electrode insulator
29 Modified Lippmann Young Equation Introduce variational method G tot ( c) el ( b) el = πr ( γ cosα + γ γ + g + g ) + πrf 3 3 t δg tot = πrδr ( γ cosα + γ 3 γ 3 + g el + gel + Ft / R) = ( c) ( b) 0 Modified Lippmann Young equation cosα cosα ε ( V ϕ 4ε κ βϕ cosh 3 i i = 0 + γ d γ β ) Ft Rγ
30 Modified Lippmann Young Equation cosα cosα ε ( V ϕ 4ε κ βϕ cosh 3 i i = 0 + γ d γ β ) Effect of EDL Line tension Ft Rγ y Fluid γ Fluid () γ Droplet () F t S Droplet d γ 3 z α Insulator (3) γ 3 ϕ x γ γ 3 3 F t S 3 Insulator S 3 / κ = 3nm, β =υe /(kt)
31 Analytical Approaches Energy Approach Electro-Mechanical Approach Numerical Approach Experimental Approach
32 Electro-Mechanical Approach Wetting tension F e = S ( l ) + S T nds ( f ) = S ( l ) { ( Π + ) + } ε ie I ε iee + S ( f ) nds For a perfectly conducting droplet (Kang 00) F e = ε d 3 V cosecα Fluid F e S Droplet
33 Analytical Approaches Energy Approach Electro-Mechanical Approach Numerical Approach Experimental Approach
34 Numerical Approach ϕ n = 0 ϕ n = 0 ( l) ( f ) s ϕs ϕ = ( l) n ε ϕ = ε ϕ ( f ) n ϕ = 0 Fluid () ϕ = sinh( βϕ) Droplet () ϕ n = 0 ϕ n = 0 ( f ) ( s) S ϕs ( f ) ( s) n ε3ϕ n ϕ = ε ϕ = ϕ = 0 ( l) ( s) S ϕs ϕ = ( l) n ε ϕ = ε ϕ ( s) n Insulator (3) 3 ϕ n = 0 ϕ =V Dimensionless parameters : ~ x = κx ~ y = κy,, ~ ϕ = υe ϕ /( kt) = βϕ ~ σ = βσ /( εκ),
35 Electrical Potential Distributions α=0 3 3 α=40 κy κy 0 0 α=70 κy κx κy κx α= κx κx V=0.5 Voltage( βϕ = ~ ϕ = 9.5), d = 3nm ( κ d =)
36 Validation Check(I) Analytical solution Electrical potential at TCL ϕ = sinhϕ ϕ = sinhϕ.8 () () (3) () Analytical Solution(4.) () Linear FVM S olution (3) FEM S olution (4) FVM S olution Fluid () σ m Fluid ().5 (4) βϕ. σ σ TCL 0.9 ϕ( α) [( ε σ + σ / ε ) α / π ] + σ m α (deg.) σ =, σ =, σ m =, κ = κ, ε / ε = 4 T. Chou, Phys. Rev. Lett., 00.
37 Validation Check Analytical solution Line tension at TCL 60 l σ 0 50 Analytical Solution(4.3) Numerical Solution 40 α (κβ /ε)f t 30 l 0 σ 0 0 ~ ( e) ( e) εκ Gel = G el = [ tanh( πx) / tanh( αx) ]dx 0 σ α (deg.) σ = σ = σ 0 =
38 ϕ n = 0 ϕ n = 0 Analytical Solution Numerical Solution Fluid () () ϕ n () ϕ n Fluid () 0.8 ϕ n = 0 d ϕ = sinhϕ dx y d ϕ = sinhϕ dx ϕ n = 0 βϕ 0.6 () n () n ε ϕ ε ϕ = σ ϕ n = 0 m x ϕ n = e βϕ / i = e e βϕ / I βϕ / I ( βϕ ) I / κi x e e ( βϕ ) I / κi x e e κx σ m =
39 (flux) 5 y n S Interface 4 Analytical S olution(4.4) Numerical Solution d Fluid () F e S 3 F ex Fey z α Solid (3) Fs F x n n 3 n Droplet () S 3 Substrate S c x ϕ n (f) (d / V) 3 ϕ ( f ) n σ 0 = ε π u u' = e, s e d 0 u ( ) α α du' s/d o ~ α = 60, βϕ = ϕ =9. 5
40 Computed Line Tension -5.0E E-08 F t F t [N] -.5E E α (deg.) cosα cosα Vε 3= 0. 5voltage, 4d ε= iκ3 nm βϕ ( V ϕ ) cosh γ d γ β i = 0 + Ft Rγ
41 Validity of Perfect-Conductor Assumption For a perfectly conducting droplet Fe = T nds = S ( l ) + S ( f ) ε 3 V d cosecα Horizontal component : Vertical component : Main assumptions F ex = F ey = ε 3 d V ε d 3 V cotα F e S
42 Effect of EDL α (deg.) f ex / 3 = ε ε V 5voltage 0. = nm 3 =, α (deg.) f ey cot α Numerical Solution ex f ex V d F ε 3 = ey ey f V d F ε 3 = d, α ϕ ϕ ε ε α ϕ ϕ ε ε sin ~ ~ ~ ~ ~ ~ sin ~ ~ ~ ~ ~ ) ( ) ( Π + = l f S S ex S d s n ds s n f
43 Electrical Permittivity Fluid 0.8 S ε F e 0.6 f ex ε Droplet ε / ε 3 f ex versus ε / ε 3 for V = 0. 5voltage, d = 3nm
44 Effect of Shape y Interface Fluid () Droplet () F e (0,.5) (-.95,0.5) (-,0) Solid (3) Substrate x V = 0. 5voltage, d = 3nm, ε / ε 3 =
45 Validity of Perfect-Conductor Assumption Fluid F e S Droplet Insulator σ V
46 Analytical Approaches Energy Approach Electro-Mechanical Approach Numerical Approach Experimental Approach
47 Microscopic Droplet Profile Air α o =3. Bean oil Silicon wafer
48 Microscopic Droplet Profile Coarse Postioning System Prove Tip Droplet Insulator
49 Microscopic Droplet Profile α 6.87 o α.95 o α α
50 Concluding Remarks Derivation of modified Lippmann-Young equation. cosα cosα ε ( V 4ε κ βϕ cosh 3 i i = 0 + γ d γ β Development of microscopic numerical method for solving electrical potential at TCL. - specific adsorption effect. Validation of electromechanical theory. ϕ Measurement of microscopic contact angle. ) Ft Rγ
51 Gabriel Lippmann (Aug.6, 845 ~ July 3, 9) The Nobel Prize for Physics in 908 Marie Curie Pierre Curie
52
53 Application Top Plate (glass) Filler Fluid (silicon oil) droplet Bottom Plate (glass) Ground Electrode (ITO) Hydrophobic Insulation Counter Electrode (chrome)
54 Free energy = d = 3nm V 0. 5voltage * G ) el : The free energy per unit depth ** EDL : The effect of electrical double layer to the free energy,
55 Free energy G G ( e) ( b) ( c) el = Gel Gel Gel el = U el TS = Ω tot ε ϕ + Π( ϕ) dω G ( b) el = S3 + S3 y 0 ( b) ( b) + Π = ε i ϕ ( ϕ ) dyds G ( c) 3 ( ϕ ) el = S c ε V d ds [ cosh( υβϕ) ] Π( ϕ) = n kt (b) ϕ : electrical potential of bulk
ω α β χ φ() γ Γ θ θ Ξ Μ ν ν ρ σ σ σ σ σ σ τ ω ω ω µ υ ρ α Coefficient of friction Coefficient of friction 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20 0.90 0.80 0.70 0.60 0.50 0.40 0.30
Διαβάστε περισσότερα6.4 Superposition of Linear Plane Progressive Waves
.0 - Marine Hydrodynamics, Spring 005 Lecture.0 - Marine Hydrodynamics Lecture 6.4 Superposition of Linear Plane Progressive Waves. Oblique Plane Waves z v k k k z v k = ( k, k z ) θ (Looking up the y-ais
Διαβάστε περισσότεραGraded Refractive-Index
Graded Refractive-Index Common Devices Methodologies for Graded Refractive Index Methodologies: Ray Optics WKB Multilayer Modelling Solution requires: some knowledge of index profile n 2 x Ray Optics for
Διαβάστε περισσότερα4.4 Superposition of Linear Plane Progressive Waves
.0 Marine Hydrodynamics, Fall 08 Lecture 6 Copyright c 08 MIT - Department of Mechanical Engineering, All rights reserved..0 - Marine Hydrodynamics Lecture 6 4.4 Superposition of Linear Plane Progressive
Διαβάστε περισσότεραThin Film Precision Chip Resistor-AR Series
hin Film Precision Chip Resistor-AR Series Construction L D1 3 4 5 6 D2 9 8 7 1 2 1 Alumina Substrate 4 Edge Electrode (NiCr) 7 Resistor Layer (NiCr) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Overcoat
Διαβάστε περισσότεραwave energy Superposition of linear plane progressive waves Marine Hydrodynamics Lecture Oblique Plane Waves:
3.0 Marine Hydrodynamics, Fall 004 Lecture 0 Copyriht c 004 MIT - Department of Ocean Enineerin, All rihts reserved. 3.0 - Marine Hydrodynamics Lecture 0 Free-surface waves: wave enery linear superposition,
Διαβάστε περισσότεραSAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Διαβάστε περισσότεραHOMEWORK 4 = G. In order to plot the stress versus the stretch we define a normalized stretch:
HOMEWORK 4 Problem a For the fast loading case, we want to derive the relationship between P zz and λ z. We know that the nominal stress is expressed as: P zz = ψ λ z where λ z = λ λ z. Therefore, applying
Διαβάστε περισσότεραCSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
Διαβάστε περισσότεραSMD - Resistors. TThin Film Precision Chip Resistor - SMDT Series. Product : Size: 0201/0402/0603/0805/1206/1210/2010/2512. official distributor of
Product : TThin Film Precision Chip Resistor - SMDT Series Size: 0201/0402/0603/0805/1206/1210/2010/2512 official distributor of 1. Features -Advanced thin film technology -Very tight tolerance down to
Διαβάστε περισσότεραEffects of surface roughness on wettability of solid surfaces
Effects of surface roughness on wettability of solid surfaces Shin-ichiro Imabayashi Recent papers discussing the effect of surface roughness on wettability of solid surfaces are reviewed. Wenzel s and
Διαβάστε περισσότερα.. 2,.. 3 .,, (, ) [1]. - [2]. [4], [5].., [6, 7] -. [8] [9]. -. [8], - ,,?, - . -, - ( ), ,.,. ,. : ; ; - ; ;. . «..»
53.61 1..,.. 3,.,...,. : ; ; - ; ;. -.,, (, ) [1]. - []. :,, -. [3] [4], [5].,,, :., [6, 7] - -. [8], - [9]. -. [8], -. -,, [10], -. -, -.. : -, -,,?, -., -, (), -. 1 13-03-00918. -,,, -. E-mail: korenchenko@physics.susu.ac.ru
Διαβάστε περισσότεραCurrent Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Διαβάστε περισσότεραTechnical Report. General Design Data of a Three Phase Induction Machine 90kW Squirrel Cage Rotor
Technical Report General Design Data of a Three Phase Induction Machine 90kW Squirrel Cage Rotor Tasos Lazaridis Electrical Engineer CAD/CAE Engineer tasoslazaridis13@gmail.com Three-Phase Induction Machine
Διαβάστε περισσότεραThermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
Διαβάστε περισσότεραRC series Thick Film Chip Resistor
RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»
Διαβάστε περισσότεραThick Film Chip Resistors
FEATURES STANDARD SIZING 0402 (1/16W), 0603 (1/10W), 0805 (1/8W), 1206 (1/4W), 2010 (1/2W) AND 2512 (1W) HIGH VOLTAGE (100VDC ~ 3,000VDC) HIGH RESISTANCE VALUES (UP TO 100MW) THICK FILM ON ALUMINA SUSTRATE,
Διαβάστε περισσότεραDevelopment of Finer Spray Atomization for Fuel Injectors of Gasoline Engines
Development of Finer Spray Atomization for Fuel Injectors of Gasoline Engines Tetsuharu MATSUO Yukio SAWADA Yukio TOMIITA This report describes the technology of Fuel Injectors a critical part of the Electronic
Διαβάστε περισσότεραHydrologic Process in Wetland
J. Jpn. Soc. Soil Phys. No. +*-, p.1+12,**0 * Hydrologic Process in Wetland Characteristics of a Mire in a Snowy Region Makoto NAKATSUGAWA** ** Toyohashi O$ce of River Works, Chubu Regional Development
Διαβάστε περισσότεραCurrent Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of
Product: Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512 official distributor of Current Sensing Thick Film Chip Resistor-SMDB Series 1. Scope -This specification
Διαβάστε περισσότεραNMBTC.COM /
Common Common Vibration Test:... Conforms to JIS C 60068-2-6, Amplitude: 1.5mm, Frequency 10 to 55 Hz, 1 hour in each of the X, Y and Z directions. Shock Test:...Conforms to JIS C 60068-2-27, Acceleration
Διαβάστε περισσότεραCSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Διαβάστε περισσότεραMicroelectronic Circuit Design Third Edition - Part I Solutions to Exercises
Microelectronic Circuit Design Third Edition - Part I Solutions to Exercises Page 11 CHAPTER 1 V LSB 5.1V 10 bits 5.1V 104bits 5.00 mv V 5.1V MSB.560V 1100010001 9 + 8 + 4 + 0 785 10 V O 786 5.00mV or
Διαβάστε περισσότεραΠαίζοντας με τις φυσαλίδες: εμβάθυνση σε ένα απλό πείραμα μελέτης της ευθύγραμμης ομαλής κίνησης
Παίζοντας με τις φυσαλίδες: εμβάθυνση σε ένα απλό πείραμα μελέτης της ευθύγραμμης ομαλής κίνησης Αναστάσιος Νέζης Όλοι όσοι διδάσκουμε Φυσική είτε στη Β Γυμνασίου είτε στην Α Λυκείου, είμαστε λίγο πολύ
Διαβάστε περισσότεραMAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet
Data Sheet Customer: Product: Size: Current Sensing Chip Resistor CS Series 0201/0402/0603/0805/1206/1010/2010/2512 1225/3720/7520 Issued Date: Edition : 12-Nov-10 REV.C5 Current Sensing Chip Resistor
Διαβάστε περισσότεραCOMPOSITE INSULATOR. ANSI Standard Type COMPOSITE LONGE ROD SUSPENSION INSULATOR. PDI 16mm Diameter Rod Deadend Insulators
COMPOSITE LONGE ROD SUSPENSION INSULATOR PDI 16mm Diameter Rod Deadend Insulators Mechanical Characteristics Item of Length Diameter Net Wt. Torsion SML RTL Proof Cat. Sheds (kg) (N-m) (kn) (kn) (kn) 1
Διαβάστε περισσότεραfor fracture orientation and fracture density on physical model data
AVAZ inversion for fracture orientation and fracture density on physical model data Faranak Mahmoudian Gary Margrave CREWES Tech talk, February 0 th, 0 Objective Inversion of prestack PP amplitudes (different
Διαβάστε περισσότεραOscillatory Gap Damping
Oscillatory Gap Damping Find the damping due to the linear motion of a viscous gas in in a gap with an oscillating size: ) Find the motion in a gap due to an oscillating external force; ) Recast the solution
Διαβάστε περισσότεραParametrized Surfaces
Parametrized Surfaces Recall from our unit on vector-valued functions at the beginning of the semester that an R 3 -valued function c(t) in one parameter is a mapping of the form c : I R 3 where I is some
Διαβάστε περισσότεραAnti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
Διαβάστε περισσότερα2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
Διαβάστε περισσότεραSMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
Διαβάστε περισσότεραΔιαμόρφωση υποστρωμάτων στη μικροκαι νανο-κλίμακα για την δημιουργία πρωτεϊνικών μικροσυστοιχιών
Διαμόρφωση υποστρωμάτων στη μικροκαι νανο-κλίμακα για την δημιουργία πρωτεϊνικών μικροσυστοιχιών Επιστημονικοί Υπεύθυνοι έργου: A. Τσερέπη Ινστιτούτο Μικροηλεκτρονικής Π. Σ. Πέτρου Ινστιτούτο Ραδιοϊσοτόπων
Διαβάστε περισσότεραData sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features
Διαβάστε περισσότεραCoupling of a Jet-Slot Oscillator With the Flow-Supply Duct: Flow-Acoustic Interaction Modeling
1th AIAA/CEAS Aeroacoustics Conference, May 006 interactions Coupling of a Jet-Slot Oscillator With the Flow-Supply Duct: Interaction M. Glesser 1, A. Billon 1, V. Valeau, and A. Sakout 1 mglesser@univ-lr.fr
Διαβάστε περισσότεραLifting Entry (continued)
ifting Entry (continued) Basic planar dynamics of motion, again Yet another equilibrium glide Hypersonic phugoid motion Planar state equations MARYAN 1 01 avid. Akin - All rights reserved http://spacecraft.ssl.umd.edu
Διαβάστε περισσότερα0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance
.635mm Pitch Board to Board Docking Connector Lead-Free Compliance MINIDOCK SERIES MINIDOCK SERIES Features Specifications Application.635mm Pitch Connector protected by Diecasted Zinc Alloy Metal Shell
Διαβάστε περισσότεραSMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
Διαβάστε περισσότεραA Determination Method of Diffusion-Parameter Values in the Ion-Exchange Optical Waveguides in Soda-Lime glass Made by Diluted AgNO 3 with NaNO 3
大阪電気通信大学研究論集 ( 自然科学編 ) 第 51 号 A Determination Method of Diffusion-Parameter Values in the Ion-Exchange Optical Waveguides in Soda-Lime glass Made by Diluted AgNO 3 with NaNO 3 Takuya IWATA and Kiyoshi
Διαβάστε περισσότεραSMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
Διαβάστε περισσότεραHandbook of Electrochemical Impedance Spectroscopy
Handbook of Electrochemical Impedance Spectroscopy A B D Im Y * Im Y * Im Y * Im Y * e Y * e Y * e Y * e Y * IUITS made of ESISTOS, INDUTOS and APAITOS E@SE/EPMI J.-P. Diard, B. e Gorrec,. Montella Hosted
Διαβάστε περισσότεραRoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.
RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. PRODUCT DETAIL Electrical Characteristics μh L (Min) Q MHz (Min) SRF Ω DCR IDC ma TEST FREQ: MHz TEST LEVEL: 100 mv Test Instruments HP4291
Διαβάστε περισσότεραPRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
Διαβάστε περισσότεραCurrent Sense Metal Strip Resistors (CSMS Series)
Features: Range: 1mΩ to 100mΩ Low TCR as low as 75PPM High power rating Custom Values available RoHS Compliant and Halogen Free Operating Temperature: -55 C to +170 C Part Number Structure CSMS 0805 -
Διαβάστε περισσότεραNPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
Διαβάστε περισσότεραChapter 7 Transformations of Stress and Strain
Chapter 7 Transformations of Stress and Strain INTRODUCTION Transformation of Plane Stress Mohr s Circle for Plane Stress Application of Mohr s Circle to 3D Analsis 90 60 60 0 0 50 90 Introduction 7-1
Διαβάστε περισσότεραTODA-ISU Corporation. SMD Power Inductor. SPI series. SMD Team
SMD Power Inductor SPI series TODA-ISU Corporation Advantages & Applications Advantages Low profile High current capability & Low DCR Low temperature rise Increased thermal efficiency Patent (Coil Integrated
Διαβάστε περισσότεραCeramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Διαβάστε περισσότεραCapacitors - Capacitance, Charge and Potential Difference
Capacitors - Capacitance, Charge and Potential Difference Capacitors store electric charge. This ability to store electric charge is known as capacitance. A simple capacitor consists of 2 parallel metal
Διαβάστε περισσότεραSMD - Resistors. Thick Film Chip Resistor-SMDC Series Size: 01005/0201/0402/0603/0805/1206/1210/2010/2512/ 1225/0612. official distributor of
Product: Thick Film Chip Resistor-SMDC Series Size: 01005/0201/0402/0603/0805/1206/1210/2010/2512/ 1225/0612 official distributor of 1. Scope Thick Film Chip Resistor-SMDC Series -This specification applies
Διαβάστε περισσότεραTopic 4. Linear Wire and Small Circular Loop Antennas. Tamer Abuelfadl
Topic 4 Linear Wire and Small Circular Loop Antennas Tamer Abuelfadl Electronics and Electrical Communications Department Faculty of Engineering Cairo University Tamer Abuelfadl (EEC, Cairo University)
Διαβάστε περισσότεραCHAPTER 25 SOLVING EQUATIONS BY ITERATIVE METHODS
CHAPTER 5 SOLVING EQUATIONS BY ITERATIVE METHODS EXERCISE 104 Page 8 1. Find the positive root of the equation x + 3x 5 = 0, correct to 3 significant figures, using the method of bisection. Let f(x) =
Διαβάστε περισσότεραISO Sample Report
PAGE NO. 1 MULTIPASS FILTER TEST REPORT SHEET - ISO 16889:1999 Test Lab: Fluid Technologies, Inc. Test Date: 00/00/0000 Operator: AAA Customer: A Housing ID: C Min. Element BP (in. water): F OPERATING
Διαβάστε περισσότεραTHICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
Διαβάστε περισσότεραThick Film Chip Resistors
FEATURES STANDARD SIZING 0402 (1/16W), 0603 (1/10W), 0805 (1/8W), 1206 (1/4W), 2010 (1/2W) AND 2512 (1W) HIGH VOLTAGE (100VDC ~ 3,000VDC) HIGH RESISTANCE VALUES (UP TO 100MΩ) THICK FILM ON ALUMINA SUSTRATE,
Διαβάστε περισσότεραThin Film Precision Chip Resistor (AR Series)
Construction D1 L (AR Series) Features -Advanced thin film technology -Very tight tolerance down to ±0.01% -Extremely low TCR down to PPM/ C -Wide resistance range 1ohm ~ 3Mega ohm -Miniature size 0201
Διαβάστε περισσότεραApplications. 100GΩ or 1000MΩ μf whichever is less. Rated Voltage Rated Voltage Rated Voltage
Features Rated Voltage: 100 VAC, 4000VDC Chip Size:,,,,, 2220, 2225 Electrical Dielectric Code EIA IEC COG 1BCG Applications Modems LAN / WAN Interface Industrial Controls Power Supply Back-Lighting Inverter
Διαβάστε περισσότερα10.0 C N = = = electrons C/electron C/electron. ( N m 2 /C 2 )( C) 2 (0.050 m) 2.
Electric Forces and Fields Section Review, p. 633 Givens Chapter 17 3. q 10.0 C q 10.0 C N 6.5 10 19 electrons 1.60 10 19 C/electron 1.60 10 19 C/electron Practice 17A, p. 636 1. q 1 8.0 C q 8.0 C r 5.0
Διαβάστε περισσότεραCL-SB SLIDE SWITCHES CL - SB B T FEATURES PART NUMBER DESIGNATION. RoHS compliant
CL-SB RoHS ompliant INTERNAL STRUCTURE 1 6 4 FEATURES Part name Cover Slider Housing Moving ontat Fixed ontat pin 5 Material Flammability Stainless steel (SUS 4) UL94V- Polyamido PPS UL94V- Polyphenylenesulphide
Διαβάστε περισσότεραMMCX SERIES Microminiature Coaxial Connectors
SERIES Microminiature Coaxial Connectors FEATURES connectors are smaller than MCX connectors and are used from DC up to 6 GHz in applications where a tiny size is crucial. INTERFACE MATING DIMENSIONS PLUG:
Διαβάστε περισσότεραHIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Διαβάστε περισσότεραDong Liu State Key Laboratory of Particle Detection and Electronics University of Science and Technology of China
Dong Liu State Key Laboratory of Particle Detection and Electronics University of Science and Technology of China ISSP, Erice, 7 Outline Introduction of BESIII experiment Motivation of the study Data sample
Διαβάστε περισσότεραAquinas College. Edexcel Mathematical formulae and statistics tables DO NOT WRITE ON THIS BOOKLET
Aquinas College Edexcel Mathematical formulae and statistics tables DO NOT WRITE ON THIS BOOKLET Pearson Edexcel Level 3 Advanced Subsidiary and Advanced GCE in Mathematics and Further Mathematics Mathematical
Διαβάστε περισσότεραDESIGN OF MACHINERY SOLUTION MANUAL h in h 4 0.
DESIGN OF MACHINERY SOLUTION MANUAL -7-1! PROBLEM -7 Statement: Design a double-dwell cam to move a follower from to 25 6, dwell for 12, fall 25 and dwell for the remader The total cycle must take 4 sec
Διαβάστε περισσότεραΕΛΕΓΧΟΣ ΤΩΝ ΠΑΡΑΜΟΡΦΩΣΕΩΝ ΧΑΛΥΒ ΙΝΩΝ ΦΟΡΕΩΝ ΜΕΓΑΛΟΥ ΑΝΟΙΓΜΑΤΟΣ ΤΥΠΟΥ MBSN ΜΕ ΤΗ ΧΡΗΣΗ ΚΑΛΩ ΙΩΝ: ΠΡΟΤΑΣΗ ΕΦΑΡΜΟΓΗΣ ΣΕ ΑΝΟΙΚΤΟ ΣΤΕΓΑΣΤΡΟ
ΕΛΕΓΧΟΣ ΤΩΝ ΠΑΡΑΜΟΡΦΩΣΕΩΝ ΧΑΛΥΒ ΙΝΩΝ ΦΟΡΕΩΝ ΜΕΓΑΛΟΥ ΑΝΟΙΓΜΑΤΟΣ ΤΥΠΟΥ MBSN ΜΕ ΤΗ ΧΡΗΣΗ ΚΑΛΩ ΙΩΝ: ΠΡΟΤΑΣΗ ΕΦΑΡΜΟΓΗΣ ΣΕ ΑΝΟΙΚΤΟ ΣΤΕΓΑΣΤΡΟ Νικόλαος Αντωνίου Πολιτικός Μηχανικός Τµήµα Πολιτικών Μηχανικών, Α.Π.Θ.,
Διαβάστε περισσότεραΜιχάλης ΚΛΟΥΒΑΣ 1, Χρήστος ΖΕΡΗΣ 2
6ο Συνέδριο Σκυροδέματος, ΤΕΕ, ΕΤΕΚ, -3/0/ 009, Πάφος, Κύπρος Αριθµητική ιερεύνηση της Επιφάνειας Αστοχίας του Σκυροδέµατος Παρουσία Εφελκυστικών Τάσεων A Numerical Investigation of the Failure Surface
Διαβάστε περισσότεραMathCity.org Merging man and maths
MathCity.org Merging man and maths Exercise 10. (s) Page Textbook of Algebra and Trigonometry for Class XI Available online @, Version:.0 Question # 1 Find the values of sin, and tan when: 1 π (i) (ii)
Διαβάστε περισσότεραModelling & Simulation of Magnetic Fields in the Radial Magnetic Bearing
R. Nirmalkumar, B.K. Sreedhar, Vijay Sharma, G. Padmakumar and K.K. Rajan Fast Reactor Technology Group, Indira Gandhi Center for Atomic Research, Kapakkam, India Abstract Centrifugal sodium pumps are
Διαβάστε περισσότεραFourier Analysis of Waves
Exercises for the Feynman Lectures on Physics by Richard Feynman, Et Al. Chapter 36 Fourier Analysis of Waves Detailed Work by James Pate Williams, Jr. BA, BS, MSwE, PhD From Exercises for the Feynman
Διαβάστε περισσότεραShunts & Multiple Shunts. Stamped Contact DIP IC Sockets. PLCC Sockets. Jumpers. DDR DIMM Sockets SOCKETS. System CS - Technical Specifications
System - Technical Specifications Shunts & Multiple Shunts Stamped Contact DIP IC Sockets ~ ~ PLCC Sockets ~ Jumpers ~ DDR DIMM Sockets Electrical: Current/Voltage rating: 0.5A/25VAC for Single Type 0.3A/25VAC
Διαβάστε περισσότερα5.0 DESIGN CALCULATIONS
5.0 DESIGN CALCULATIONS Load Data Reference Drawing No. 2-87-010-80926 Foundation loading for steel chimney 1-00-281-53214 Boiler foundation plan sketch : Figure 1 Quantity Unit Dia of Stack, d 6.00 m
Διαβάστε περισσότεραP ƒ. μ μ², Œ.. ˆ μ,.. μ ± Î Š Ÿ ˆ Œ ˆŸ ˆ Ÿ Š ˆ. ² μ Ê ² μ Ò É Ì ± Ô± ³ É.
P13-2011-120. ƒ. μ μ², Œ.. ˆ μ,.. μ ± Î Š Ÿ ˆ Œ ˆŸ ˆ Ÿ Š ˆ ² μ Ê ² μ Ò É Ì ± Ô± ³ É E-mail: sobolev@nrmail.jinr.ru μ μ². ƒ., ˆ μ Œ.., μ ± Î.. P13-2011-120 É μ ± ²Ö ³ Ö μ² ÒÌ Î Ö ÒÌ ±Í Ò É Ö Ô± ³ É ²Ó Ö
Διαβάστε περισσότεραAnti-Corrosive Thin Film Precision Chip Resistor (PR Series)
(PR Series) Features -Long term life stability and demonstrated the Anti Corrosion claims -Special passivated NiCr film for Anti-Acid and Anti-Damp -Tight tolerance down to ±0.1% -Extremely low TCR down
Διαβάστε περισσότεραDETERMINATION OF DYNAMIC CHARACTERISTICS OF A 2DOF SYSTEM. by Zoran VARGA, Ms.C.E.
DETERMINATION OF DYNAMIC CHARACTERISTICS OF A 2DOF SYSTEM by Zoran VARGA, Ms.C.E. Euro-Apex B.V. 1990-2012 All Rights Reserved. The 2 DOF System Symbols m 1 =3m [kg] m 2 =8m m=10 [kg] l=2 [m] E=210000
Διαβάστε περισσότεραUsing the Jacobian- free Newton- Krylov method to solve the sea- ice momentum equa<on
Using the Jacobian- free Newton- Krylov method to solve the sea- ice momentum equa
Διαβάστε περισσότερα1. (a) (5 points) Find the unit tangent and unit normal vectors T and N to the curve. r(t) = 3cost, 4t, 3sint
1. a) 5 points) Find the unit tangent and unit normal vectors T and N to the curve at the point P, π, rt) cost, t, sint ). b) 5 points) Find curvature of the curve at the point P. Solution: a) r t) sint,,
Διαβάστε περισσότεραThin Film Precision Chip Resistor (AR Series)
Construction D1 L (AR Series) Features -Advanced thin film technology -Very tight tolerance down to ±0.01% -Extremely low TCR down to ±5PPM/C -Wide resistance range 1ohm ~ 3Mega ohm -Miniature size 0201
Διαβάστε περισσότερα1 Alumina Substrate 4 Edge Electrode (NiCr) 7 Resistor Layer (NiCr) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Overcoat (Epoxy)
ARN series Thin Film High Precision Chip Resistor Features» Advanced thin film technology» Very tight tolerance down to ±0.01%» Extremely low TCR down to ±5ppm/» Wide resistance range 1ohm-3Mega ohm» Miniature
Διαβάστε περισσότεραChapter 9 Ginzburg-Landau theory
Chapter 9 Ginzburg-Landau theory The liit of London theory The London equation J µ λ The London theory is plausible when B 1. The penetration depth is the doinant length scale ean free path λ ξ coherent
Διαβάστε περισσότεραA facile and general route to 3-((trifluoromethyl)thio)benzofurans and 3-((trifluoromethyl)thio)benzothiophenes
Electronic Supplementary Material (ESI) for ChemComm. This journal is The Royal Society of Chemistry 2014 A facile and general route to 3-((trifluoromethyl)thio)benzofurans and 3-((trifluoromethyl)thio)benzothiophenes
Διαβάστε περισσότεραΠΣΤΥΙΑΚΗ ΔΡΓΑΙΑ. Μειέηε Υξόλνπ Απνζηείξσζεο Κνλζέξβαο κε Τπνινγηζηηθή Ρεπζηνδπλακηθή. Αζαλαζηάδνπ Βαξβάξα
ΣΔΥΝΟΛΟΓΙΚΟ ΔΚΠΑΙΓΔΤΣΙΚΟ ΙΓΡΤΜΑ ΘΔΑΛΟΝΙΚΗ ΥΟΛΗ ΣΔΥΝΟΛΟΓΙΑ ΣΡΟΦΙΜΩΝ & ΓΙΑΣΡΟΦΗ ΣΜΗΜΑ ΣΔΥΝΟΛΟΓΙΑ ΣΡΟΦΙΜΩΝ ΠΣΤΥΙΑΚΗ ΔΡΓΑΙΑ Μειέηε Υξόλνπ Απνζηείξσζεο Κνλζέξβαο κε Τπνινγηζηηθή Ρεπζηνδπλακηθή Αζαλαζηάδνπ Βαξβάξα
Διαβάστε περισσότεραMetal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
Διαβάστε περισσότερα3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
Διαβάστε περισσότεραB37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
Διαβάστε περισσότεραThin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
Διαβάστε περισσότεραThick Film Chip Resistor-SMDC Series Size: 01005/0201/0402/0603/0805/1206/1210/2010/2512. official distributor of
Product: Thick Film Chip Resistor-SMDC Series Size: 01005/0201/0402/0603/0805/1206/1210/2010/2512 official distributor of Thick Film Chip Resistor-SMDC Series 1. Scope -This specification applies to all
Διαβάστε περισσότεραTable of contents. 1. Introduction... 4
Table of contents 0. Motivation.... 1 1. Introduction... 4 2. Inclusion compounds of [Al(OH)(bdc)] n and [V(O)(bdc)] n... 11 2.1 [(η 5 -C 5 H 5 ) 2 Fe] 0.5 @MIL-53(Al) and [(η 5 -C 5 H 5 ) 2 Co] 0.25 @MIL-53(Al)
Διαβάστε περισσότεραMultilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Διαβάστε περισσότεραThin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
Διαβάστε περισσότεραFT-63 SINGLE TURN CERMET TRIMMERS. F T E T V 5 k Ω ( ) FEATURES PART NUMBER DESIGNATION
SINGLE TURN FT-6 RoHS compliant INTERNAL STRUCTURE 4 5 8 6 FEATURES 4 5 6 8 Part name Housing Rotor Wiper O ring Resistive element Terminal pin Adhesive Base element Electrode Material PBT Polybutyleneterephthalate
Διαβάστε περισσότεραTHICK FILM CHIP RESISTOR" CAL-CHIP ELECTRONICS INC."
THICK FILM CHIP RESISTOR CAL-CHIP ELECTRONICS INC. CAL-CHIP SERIES: RM SERIES 1 2 3 INTRODUCTION SCOPE Applies to all sizes of rectangular-type fixed chip resistors with Ruthenium base as material. FEATURES
Διαβάστε περισσότεραMnZn. MnZn Ferrites with Low Loss and High Flux Density for Power Supply Transformer. Abstract:
MnZn JFE No. 8 5 6 p. 32 37 MnZn Ferrites with Low Loss and High Flux Density for Power Supply Transformer FUJITA Akira JFE Ph. D. FUKUDA Yutaka JFE NISHIZAWA Keitarou JFE TOGAWA Jirou MnZn Fe2O3 1 C NiO
Διαβάστε περισσότεραSoil Temperature Change and Heat of Wetting during Infiltration into Dry soils
J. Jpn. Soc. Soil Phys. No. +*, p.+++3,**1 **** Soil Temperature Change and Heat of Wetting during Infiltration into Dry soils Takeo AKAE*, Aya TANAKA** and Munehide ISHIGURO* * The Graduate School of
Διαβάστε περισσότερα4. Construction. 5. Dimensions Unit mm
1. Scope This specification applies to all sizes of rectangular-type fixed chip resistors with Ni/Cr as material. 2. Features Tolerance from 0.01%1% Thin film & Ni/Cr Resistor TCR from 5ppm 50ppm for thin
Διαβάστε περισσότεραDifferential equations
Differential equations Differential equations: An equation inoling one dependent ariable and its deriaties w. r. t one or more independent ariables is called a differential equation. Order of differential
Διαβάστε περισσότεραThick Film Array Chip Resistor
CN Series Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features -Small size and light weight -Reduction of assembly costs and
Διαβάστε περισσότεραDifferentiation exercise show differential equation
Differentiation exercise show differential equation 1. If y x sin 2x, prove that x d2 y 2 2 + 2y x + 4xy 0 y x sin 2x sin 2x + 2x cos 2x 2 2cos 2x + (2 cos 2x 4x sin 2x) x d2 y 2 2 + 2y x + 4xy (2x cos
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. Drain Bias. Drain Bias. Gate Bias (RD04HMS2) GND (RD70HUF2) (RD70HUF2) RF IN.
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-122 Date : 28 th Feb. 211 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότερα3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
Διαβάστε περισσότεραHigh Voltage Thick Film Chip Resistor
Scope -his specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features -Highly reliable multilayer electrode construction -Higher component and
Διαβάστε περισσότερα