PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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1 PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE WIDTH: Wg = µm DESCRIPTION The NE9M1 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER PACKAGE OUTLINE NE9M1 M1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at f = 1 GHz, db.9 1. f = GHz VDS = V. GA Associated Gain at f = 1 GHz, ID = 1 ma db 9 1 f = GHz 15. Gm Transconductance at VDS = V, ID = 1 ma ms 5 6 NE9M1 IDSS Saturated Drain Current at VDS = V, VGS = V ma 6 9 VGS (OFF) Gate to Source Cutoff Voltage at VDS = V, ID = 1 µa V IGSO Gate to Source Leak Current at VGS = -3 V µa.5 1 Noise Figure, NF (db) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Ga NF Frequency, f (GHz) VDS = V ID = 1 ma RECOMMENDED OPERATING CONDITIONS (TA = 5 C) SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX Associated Gain, GA (db) VDS Drain to Source Voltage V 3 ID Drain Current ma 1 Pin Input Power dbm California Eastern Laboratories
2 NE9M1 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) Drain Current, ID (ma) VDS Drain to Source Voltage V. VGS Gate to Source Voltage V -3. ID Drain Current ma IDSS IG Gate Current µa 1 PTOT Total Power Dissipation mw 15 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to +15 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA ( C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = V Gate to Source Voltage, VGS (V) TYPICAL NOISE PARAMETERS (TA = 5 C) VDS = V, ID = 1 ma FREQ. NFMIN GA ΓOPT (GHz) (db) (db) MAG ANG Rn/5 Drain Current, ID (ma) Maximum Stable Gain, MSG (db) Maximum Available Gain, MAG (db) Forward Insertion Gain, IS1Sl (db) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) MSG IS1SI Frequency, f (GHz) VDS = V ID = 1 ma MAG VGS = V -. V -. V -.6 V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY
3 NE9M1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j1 j1 S j1 -j5 NE9M1 VD = V, ID = 1 ma -j5 S S11 -j1 S11 Coordinates in Ohms Frequency in GHz VD = V, ID = 1 ma S1 18 S1 S1-15 S1 FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note: 1. Gain Calculation: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain
4 NE9M1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j1 j1 S -j S -j5 NE9M1 VD = V, ID = ma -j5 S11 -j1 S11 Coordinates in Ohms Frequency in GHz VD = V, ID = ma S1 18 S1 S1 S FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note: 1. Gain Calculation: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain
5 NE9M1 NONLINEAR MODEL SCHEMATIC FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO RG. VTOSC RD ALPHA 3. RS 1 BETA.715 RGMET GAMMA.87 KF GAMMADC.9 AF 1 Q TNOM 7 DELTA 1.1 XTI 3 VBI.8 EG 1.3 IS 1e-1 VTOTC N 1 BETATCE RIS FFE 1 RID TAU e-1 CDS.7e-1 RDB 5 CBS 1e-1 CGSO CGDO.e-1.e-1 DELTA 1.3 DELTA. FC.5 VBR Infinity (1) Series IV Libra TOM Model GATE CGX.1pF LG_PKG.5nH LG.6nH CGS_PKG.11pF CGD_PKG.3pF Q1 SOURCE LS.16nH LS_PKG.5nH LD.5nH UNITS Parameter time capacitance inductance resistance voltage current LD_PKG.67nH CCD_PKG.1pF MODEL RANGE CDX.1pF DRAIN Units seconds farads henries ohms volts amps Frequency:.5 to 15 GHz Bias: VDS = 1 V to 3 V, ID = 1 ma to 3 ma IDSS = 58 VGS = V, VDS = V Noise: VDS = V, ID = 1 ma, to 1 GHz Date: /98
6 NE9M1 OUTLINE DIMENSIONS (Units in mm) PIN CONNECTIONS. ± ± PACKAGE OUTLINE M ± ±.1 V7 to.1 ORDERING INFORMATION. ± Gate. Drain, 3, 5, 6. Source.15 ±.1 PART NUMBER PACKAGING NE9M1-T1 6 pin super minimold Note: Embossed Tape 8 mm wide. 1,, & 3 pins face to perforation side of the tape Pin NO. Pin Name 1 Gate Source 3 Source Drain 5 Source 6 Source EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 59 Patrick Henry Drive Santa Clara, CA (8) Telex FAX (8) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -1/98 1 (Top View) V (Bottom View) 3 1
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RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
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Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction
TS-HA/HB Series 105 C, 3000 hours Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction RoHS Compliant Rated Working Voltage: Operating Temperature:
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
Current Sense Metal Strip Resistors (CSMS Series)
Features: Range: 1mΩ to 100mΩ Low TCR as low as 75PPM High power rating Custom Values available RoHS Compliant and Halogen Free Operating Temperature: -55 C to +170 C Part Number Structure CSMS 0805 -
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
High Power Amp BMT321. Application Note
RF MMIC Innovator www.berex.com [Classification] Application Note [Date] 2015.11 [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_Agilent N5182A
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
Power Inductor LVS Series
RoHS Compliant Halogen Free REACH Compliant Part Numbering LVS 6645 L - 1R M - AU Series Name Dimensions Code Inductance Internal Code (mm) (uh) Tolerance 4412 4.x4.x1.2 L Low DCR R47.47 M ±% 4418 4.x4.x1.8
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
GENERAL PURPOSE TRANSFORMERS 2 Watt Pulse, Electrostatically Shielded, 500 mw Pulse, RF Pulse, and Control Transformers
Watt Pulse, Electrostatically Shielded, 00 mw Pulse, RF Pulse, and Control Transformers Wide range of inductors and turns ratios Suitable for a variety of applications High flux density capability Available
NTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-55 Date : 15 h Nov. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
MAX823/MAX824/MAX825 V CC PART TEMP. RANGE PIN-PACKAGE MAX824_EUK. -40 C to +85 C
19-0487; Rev 1; 6/97 µ µ µ µ PART TEMP. RANGE PIN-PACKAGE _EUK MAX824_EUK -40 C to +85 C -40 C to +85 C 5 SOT23-5 5 SOT23-5 MAX825_EUK -40 C to +85 C 5 SOT23-5 Insert the desired suffix letter (from the
Gearmotor Data. SERIES GM9000: We have the GM9434H187-R1
SERIES GM9: We have the GM9434H187-R1 Gearmotor Data Item Parameter Symbol Units 5.9:1 11.5:1 19.7:1 38.3:1 65.5:1 127.8:1 218.4:1 425.9:1 728.1:1 1419.8:1 2426.9:1 4732.5:1 1 Max. Load Standard Gears
SMD Wire Wound Ferrite Chip Inductors - LS Series. LS Series. Product Identification. Shape and Dimensions / Recommended Pattern LS0402/0603/0805/1008
SMD Wire Wound Ferrite Chip Inductors - LS Series LS Series LS Series is the newest in open type ferrite wire wound chip inductors. The wire wound ferrite construction supports higher SRF, lower DCR and
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Precision Metal Film Fixed Resistor Axial Leaded
Features EIA standard colour-coding Non-Flame type available Low noise and voltage coefficient Low temperature coefficient range Wide precision range in small package Too low or too high ohmic value can
Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 20-Second Durations
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
![± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:](/thumbs/85/91419422.jpg "± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:")
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
POWER OVER ETHERNET (PoE) MAGNETICS
RoHS-5 peak reflow temperature rating 35 C RoHS-6 peak reflow temperature rating 45 C IEEE 80.3af/ANSI X3.63 compliant performance Designed for IP phone or switch applications Electrical Specifications
Input Ranges : 9-75 VDC
D Series, 10- Input Ranges : 9-75 VDC : Single 3.3V - 24V Bipolar ±5.0V, ±12V, ±15V Dual +5.0V / Triple +5.0V / ±12V +5.0V / ±15V Power: 6.6 to 15 W The D series DC-DC converters feature high power density,