Quartz Crystal Test Report

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1 Quartz Crystal Test Report Abracon Part no. : Data Type: Page 2-3 Page 4-5 Page 6-7 Page 8-9 Page ABM8-Series Crystal parameters & Spice Model ABM MHz-10-1-U ABM MHz-10-1-U ABM MHz-10-1-U ABM MHz-10-1-U-T ABM MHz-10-1-U-T Abracon Corporation ( Page (1) of (11)

2 Equipment Used: S&A 250B Carrier Frequency: Plating Load: Power Level during Test: Test Impedance: FL (ppm) limits: ESR Limits: ABM MHz-10-1-U-T MHz 10pF 10µW Maximum 50Ω ±10 ppm Maximum 70Ω Maximum Unit # FL (ppm) Co (pf) ESR (Ω) Q (k) Cm (ff) Lm (mh) Ts (ppm/pf) Power level during test (µw) Min Max Average Sigma 9.59E E E E E E E E-03 Abracon Corporation ( Page (2) of (11)

3 Spice model ABM MHz-10-1-U-T Mathematical Description Resonance frequency Anti-resonance frequency Capacitance ratio Quality factor fr = 1/[2πSQRT(L1*C1)] fa = fr*sqrt[1 + C1/C0] γ = C0/C1 Q = 2π*fr*L1/R1 = 1/[2πfr*C1*R1] Symbol Description Average Value Units C0 Crystal Package Shunt Capacitance 0.87 pf C1 Motional Capacitance (also referred to as Cm) 1.78 ff L1 Motional Inductance (also referred to as Lm) mh R1 Effective Series Resistance (also referred to as ESR) Ω Ts Crystal sensitivity to load variation 7.55 ppm/pf Q Crystal device Quality Factor k γ C0/C1 ratio Abracon Corporation ( Page (3) of (11)

4 Equipment Used: S&A 250B Carrier Frequency: Plating Load: Power Level during Test: Test Impedance: FL (ppm) limits: ESR Limits: ABM MHz-10-1-U-T MHz 10pF 10µW Maximum 25Ω ±10 ppm Maximum 100Ω Maximum Unit # FL (ppm) Co (pf) ESR (Ω) Q (k) Cm (ff) Lm (mh) Ts (ppm/pf) Power level during test (µw) Min Max Average Sigma Abracon Corporation ( Page (4) of (11)

5 Spice model ABM MHz-10-1-U-T Mathematical Description Resonance frequency Anti-resonance frequency Capacitance ratio Quality factor fr = 1/[2πSQRT(L1*C1)] fa = fr*sqrt[1 + C1/C0] γ = C0/C1 Q = 2π*fr*L1/R1 = 1/[2πfr*C1*R1] Symbol Description Average Value Units C0 Crystal Package Shunt Capacitance 1.04 pf C1 Motional Capacitance (also referred to as Cm) 1.86 ff L1 Motional Inductance (also referred to as Lm) mh R1 Effective Series Resistance (also referred to as ESR) Ω Ts Crystal sensitivity to load variation 7.64 ppm/pf Q Crystal device Quality Factor k γ C0/C1 ratio Abracon Corporation ( Page (5) of (11)

6 Equipment Used: S&A 250B Carrier Frequency: Plating Load: Power Level during Test: Test Impedance: FL (ppm) limits: ESR Limits: ABM MHz-10-1-U-T MHz 10pF 10µW Maximum 35Ω ±10 ppm Maximum 35Ω Maximum Unit # FL (ppm) Co (pf) ESR (Ω) Q (k) Cm (ff) Lm (mh) Ts (ppm/pf) Power level during test (µw) Min Max Average Sigma Abracon Corporation ( Page (6) of (11)

7 Spice model ABM MHz-10-1-U-T Mathematical Description Resonance frequency Anti-resonance frequency Capacitance ratio Quality factor fr = 1/[2πSQRT(L1*C1)] fa = fr*sqrt[1 + C1/C0] γ = C0/C1 Q = 2π*fr*L1/R1 = 1/[2πfr*C1*R1] Symbol Description Average Value Units C0 Crystal Package Shunt Capacitance 1.52 pf C1 Motional Capacitance (also referred to as Cm) 5.02 ff L1 Motional Inductance (also referred to as Lm) 3.16 mh R1 Effective Series Resistance (also referred to as ESR) 6.81 Ω Ts Crystal sensitivity to load variation ppm/pf Q Crystal device Quality Factor k γ C0/C1 ratio Abracon Corporation ( Page (7) of (11)

8 Equipment Used: S&A 250B Carrier Frequency: Plating Load: Power Level during Test: Test Impedance: FL (ppm) limits: ESR Limits: ABM MHZ-10-1-U-T MHz 10pF 10µW Maximum 35Ω ±10 ppm Maximum 50Ω Maximum Unit # FL (ppm) Co (pf) ESR (Ω) Q (k) Cm (ff) Lm (mh) Ts (ppm/pf) Power level during test (µw) Min Max Average Sigma Abracon Corporation ( Page (8) of (11)

9 Spice model ABM MHZ-10-1-U-T Mathematical Description Resonance frequency Anti-resonance frequency Capacitance ratio Quality factor fr = 1/[2πSQRT(L1*C1)] fa = fr*sqrt[1 + C1/C0] γ = C0/C1 Q = 2π*fr*L1/R1 = 1/[2πfr*C1*R1] Symbol Description Average Value Units C0 Crystal Package Shunt Capacitance 1.06 pf C1 Motional Capacitance (also referred to as Cm) 3.11 ff L1 Motional Inductance (also referred to as Lm) mh R1 Effective Series Resistance (also referred to as ESR) 9.17 Ω Ts Crystal sensitivity to load variation ppm/pf Q Crystal device Quality Factor k γ C0/C1 ratio Abracon Corporation ( Page (9) of (11)

10 Equipment Used: S&A 250B Carrier Frequency: Plating Load: Power Level during Test: Test Impedance: FL (ppm) limits: ESR Limits: ABM MHZ-10-1-U-T MHZ 10pF 10µW Maximum 8Ω ±10 ppm Maximum 50Ω Maximum Unit # FL (ppm) Co (pf) ESR Cm Lm Q (k) (Ω) (ff) (mh) Ts (ppm/pf) Min Max Average Sigma Abracon Corporation ( Page (10) of (11)

11 Spice model ABM MHZ-10-1-U-T Mathematical Description Resonance frequency Anti-resonance frequency Capacitance ratio Quality factor fr = 1/[2πSQRT(L1*C1)] fa = fr*sqrt[1 + C1/C0] γ = C0/C1 Q = 2π*fr*L1/R1 = 1/[2πfr*C1*R1] Symbol Description Average Value Units C0 Crystal Package Shunt Capacitance 0.79 pf C1 Motional Capacitance (also referred to as Cm) 2.54 ff L1 Motional Inductance (also referred to as Lm) mh R1 Effective Series Resistance (also referred to as ESR) 8.74 Ω Ts Crystal sensitivity to load variation ppm/pf Q Crystal device Quality Factor k γ C0/C1 ratio Abracon Corporation ( Page (11) of (11)

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