NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
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1 NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector 9 MHz, 4.8 Volts, Typ. 15 db G 9 MHz, 4.8 Volts, Typ. -35 dbc IMD P out of +14 dbm per tone, 9 MHz, 3 Volts, Typ dbm P 1dB and 5% Collector 19 MHz, 3 Volts, Typ. Applications Driver Amplifier for GSM and AMPS/ETACS/NMT Cellular Phones 9 and 18 MHz ISM Special Mobile Radio, CATV 19 MHz US PCS Surface Mount Package SOT-343 (SC-7) Outline 4T Pin Configuration 3 Emitter 4 Collector Base 2 1 Emitter Description Hewlett Packard s AT-3843 is a low cost, NPN silicon bipolar junction transistor housed in a miniature SC-7 surface mount plastic package. This device can be used as a pre-driver, driver, or output device in many applications for cellular and other wireless communications markets. At 4.8 volts, the AT-3843 features +25 dbm output power, while providing 15 db of gain and 6% collector efficiency. Superior efficiency and gain make the AT-3843 an excellent choice for battery powered systems. The AT-3843 is fabricated with Hewlett Packard s 1 GHz F t Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
2 2 AT-3843 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.4 V CBO Collector-Base Voltage V 16. V CEO Collector-Emitter Voltage V 9.5 I C Collector Current ma 16 P T Power Dissipation [2] mw 5 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Thermal Resistance [3] : θ jc = 13 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 7.7 mw/ C for T C > 85 C. T C is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, V CE = 4.8 V, I C = 5 ma, T J = 15 C, 1 2 µm hot-spot resolution. Electrical Specifications, T C = 25 C Freq. = 9 MHz, V CE = 4.8 V, I CQ = 15 ma, CW operation, Test Circuit A, unless otherwise specified Symbol Parameters and Test Conditions Units Min. Typ. Max. P 1dB Output 1 db Gain Compression [1] dbm G 1dB 1 db Compression Gain [1] db η C Collector 1 db Gain Compression [1] % 45 6 Mismatch Tolerance, No Damage [1] P out = +25 dbm 7:1 any phase, 2 sec duration IMD 3 3rd Order Intermodulation Distortion, F1 = 899 MHz dbc 35 2-Tone Test, P out each tone = +14 dbm [1] F2 = 91 MHz V CE = 3. V BV EBO Emitter-Base Breakdown Voltage I E =.2 ma, open collector V 1.4 BV CBO Collector-Base Breakdown Voltage I C = 1. ma, open emitter V 16. BV CEO Collector-Emitter Breakdown Voltage I C = 3. ma, open base V 9.5 h FE Forward Current Transfer Ratio V CE = 3 V, I C = 16 ma I CEO Collector Leakage Current V CEO = 5 V µa 15 Note: 1. With external matching on input and output, tested in a 5 ohm environment. Refer to Test Circuit A.
3 3 AT-3843 Typical Performance, T C = 25 C OUTPUT POWER (dbm), GAIN (db) P 1dB G 1dB ηc FREQUENCY (MHz) Figure 1. Output Power, Gain, and Collector Efficiency vs. Frequency at V CE = 1.2 V, I CQ = 15 ma. COLLECTOR EFFICIENCY (%) OUTPUT POWER (dbm), GAIN (db) G 1dB P 1dB ηc FREQUENCY (MHz) Figure 2. Output Power, Gain, and Collector Efficiency vs. Frequency at V CE = 3. V, I CQ = 15 ma. COLLECTOR EFFICIENCY (%) OUTPUT POWER (dbm), GAIN (db) G 1dB P 1dB ηc FREQUENCY (MHz) Figure 3. Output Power, Gain, and Collector Efficiency vs. Frequency at V CE = 4.8 V, I CQ = 15 ma. COLLECTOR EFFICIENCY (%) -1 Γsource = Γload = Γsource = Γload = Γsource = Γload = IMD IMD (dbc) -3-4 IMD 5 IMD (dbc) -3-4 IMD 3 IMD 5 IMD (dbc) -3-4 IMD IMD OUTPUT POWER/TONE (dbm) Figure 4. IMD 3, IMD 5 vs. Output Power (per tone) at V CE = 3. V and I CQ = 15 ma, Frequency = 45 MHz OUTPUT POWER/TONE (dbm) Figure 5. IMD 3, IMD 5 vs. Output Power (per tone) at V CE = 3. V and I CQ = 15 ma, Frequency = 9 MHz OUTPUT POWER/TONE (dbm) Figure 6. IMD 3, IMD 5 vs. Output Power (per tone) at V CE = 3. V and I CQ = 15 ma, Frequency = 19 MHz.
4 4 AT-3843 Typical Performance Under Pulsed Operation, T C = 25 C V CE = 3. V, I CQ = 15 ma, pulse width = 577 µs, unless otherwise specified Frequency = 9 MHz Duty Cycle Parameters 12.5% 33% 5% 1% = CW P 1dB G 1dB ηc P 3dB G 3dB ηc Frequency = 19 MHz Duty Cycle Parameters 12.5% 33% 5% 1% = CW P 1dB G 1dB ηc P 3dB G 3dB ηc
5 5 AT-3843 Typical Large Signal Impedances Freq. Bias Γsource Γload ( MHz ) V CE (V) I CQ (ma) Mag. Ang. Mag. Ang
6 6 AT-3843 Spice Model Parameters Die Model CPad C CPad B CPad Ccb (pf) Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR Die Area =.67 CPad =.36 pf Value E E E E1 Label NR TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB RE RC Value E E pf pf E Vcb (V) Figure 7. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). Packaged Model B R = Ra L = La C = Ca L = Lb R = Rb C = Cb C = Cb L = La R = Ra C = Ca C B C E1 E2 R = Ra L = La C = Ca L = Lb R = Rb C = Cb L = Lb R = Rb L = La C = Cb R = Ra C = Ca Label Ra Rb La Lb Ca Cb Value.1 Ω.2 Ω.85 nh.25 nh.1 pf.1 pf E
7 7 AT-3843 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, V CE = 1.2 V, I C = 5 ma, T C = +25 C Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang AT-3843 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, V CE = 3. V, I C = 5 ma, T C = +25 C Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang
8 8 AT-3843 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, V CE = 3.6 V, I C = 5 ma, T C = +25 C Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang AT-3843 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, V CE = 4.8 V, I C = 5 ma, T C = +25 C Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang
9 9 AT-3843 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, V CE = 6. V, I C = 5 ma, T C = +25 C Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang
10 1 AT-3843 Typical Performance, T C = 25 C Gain (db) S 21 2 MSG MAG FREQUENCY (GHz) Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency V CE = 1.2 V, I C = 5 ma. Gain (db) S 21 2 MSG MAG FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency V CE = 3. V, I C = 5 ma. Gain (db) S 21 2 MSG MAG FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency V CE = 3.6 V, I C = 5 ma MSG 25 2 MSG Gain (db) S 21 2 MAG Gain (db) S 21 2 MAG FREQUENCY (GHz) Figure 11. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency V CE = 4.8 V, I C = 5 ma FREQUENCY (GHz) Figure 12. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency V CE = 6. V, I C = 5 ma.
11 11 Test Circuit A: Test Circuit Board 9 MHz V BB V CC 38.1 (1.5) V BB T1 C2 C1 R2 R1 C3 C4 C5 C6 C7 C8 V CC 4/97 C9 C1 C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 T1 1. pf 1. pf 1. nf 1. pf 1. nf 1.5 µf 1. µf 1. pf 3.6 pf 1. pf 1. Ω 62. Ω MBT 2222A INPUT PA4 DEMO B MFG142 REV A OUTPUT CW Test V CE = 4.8 V I CQ = 15 ma Freq. = 9 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit A: Test Circuit Schematic 9 MHz 1 Ω V BB 62 Ω CW Test V CE = 4.8 V I CQ = 15 ma Freq. = 9 MHz V CC B C E DC Transistor 1 nf 1 pf 1 pf 1 nf 1.5 µf 1 µf 8 Ω 8 Ω 9 MHz 9 MHz RF IN 1 pf 5 Ω 5 Ω = (1.92) 3.6 pf 1 pf RF OUT 1 pf = 5.89 (.232)
12 12 Test Circuit B: Test Circuit Board 19 MHz V BB V CC 38.1 (1.5) V BB C1 T1 R2 R1 C2 C3 C4 C6 C5 C7 C8 C9 V CC 4/97 C1 C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 T1 1. pf 1. nf 1. pf 3.6 pf 1.8 pf 1 pf 1 nf 1.5 µf 1 µf 1. pf 1. Ω 62. Ω MBT 2222A INPUT PA4 DEMO B MFG142 REV A OUTPUT CW Test V CE = 3. V I CQ = 15 ma Freq. = 19 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit B: Test Circuit Schematic 19 MHz 1 Ω V BB 62 Ω CW Test V CE = 3. V I CQ = 15 ma Freq. = 19 MHz V CC B C E DC Transistor 1 nf 1 pf 1 pf 1 nf 1.5 µf 1 µf 8 Ω 8 Ω 19 MHz 19 MHz RF IN 1 pf 5 Ω 5 Ω =.299 (7.59) 1.8 pf 1 pf RF OUT 3.6 pf =.2 (.51)
13 13 Part Number Ordering Information Part Number Devices per Reel Container AT-3843-TR1 3 7" Reel AT-3843-TR2 1, 13" Reel AT-3843-BLK 1 Tape Package Dimensions SOT-343 (SC-7) Plastic Package 1.3 (.51) BSC 1.3 (.51) REF E E1 2.6 (.12) 1.3 (.51).55 (.21) TYP.85 (.33) 1.15 (.45) BSC e 1.15 (.45) REF D h A b TYP A1 L C TYP DIMENSIONS θ SYMBOL A A1 b C D E e h E1 L θ MIN. MAX..8 (.31) 1. (.39) ().1 (.4).25 (.1).35 (.14).1 (.4).2 (.8) 1.9 (.75) 2.1 (.83) 2. (.79) 2.2 (.87).55 (.22).65 (.25).45 TYP (.18) 1.15 (.45).1 (.4) 1.35 (.53).35 (.14) 1 DIMENSIONS ARE IN MILLIMETERS (INCHES)
14 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE 8 mm USER FEED DIRECTION COVER TAPE Tape Dimensions For Outline 4T P D P 2 P E F W t 1 (CARRIER TAPE THICKNESS) D 1 8 MAX. K 5 MAX. A B CAVITY PERFORATION CARRIER TAPE DISTANCE DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) A B K P D 1 D P E 2.24 ± ± ±.1 4. ± ±.5 4. ± ±.1 W 8. ±.3 t ±.13 F 3.5 ±.5 P 2 2. ±.5.88 ±.4.92 ±.4.48 ± ± ± ±.4.69 ± ±.12.1 ± ±.2.79 ±.2 For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: or Far East/Australasia: Call your local HP sales office. Japan: (81 3) Europe: Call your local HP sales office. Data subject to change. Copyright 1997 Hewlett-Packard Co. Printed in U.S.A E (11/97)
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