4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625
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1 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT Features 4.8 Volt Operation +28. dbm P 9 MHz, Typ. 7% Collector 9 MHz, Typ. 9 db Power 9 MHz, Typ. -31 dbc IMD P out of 21 dbm per Tone, 9 MHz, Typ. 5% Smaller than SOT-223 Package MSOP-3 Surface Mount Plastic Package Outline 25 Pin Configuration COLLECTOR 4 Description Hewlett Packard s AT is a low cost, NPN medium power silicon bipolar junction transistor housed in a miniature, MSOP-3 surface mount plastic package. The AT can be used as a driver device or an output device, depending on the specific application. The AT features +28 dbm CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT ideal for use in battery powered systems. Applications Medium Power Driver Device for Cellular/PCS, ISM 9, WLAN Output Power Device for ISM 9, Cordless, WLAN EMITTER 1 2 BASE 3 EMITTER The AT is fabricated with Hewlett Packard s 1 GHz F t Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices E
2 AT Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.4 V CBO Collector-Base Voltage V 16. V CEO Collector-Emitter Voltage V 9.5 I C Collector Current ma 32 P T Power Dissipation [2] W 1. T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Thermal Resistance [3] : θ jc = 65 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 15.4 mw/ C for T c > 85 C. T c is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, V CE =4.8 V, I c =5 ma, T j =15 C, 1-2 µm hot-spot resolution. Electrical Specifications, T C = 25 C Symbol Parameters and Test Conditions Units Min. Typ. Max. Freq. = 9 MHz, V CE = 4.8 V, I CQ = 5 ma, CW operation, Test Circuit A, unless otherwise specified P out Output Power [1] P in = +19 dbm dbm η C Collector Efficiency [1] P in = +19 dbm % 55 7 IMD 3 3rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dbc -31 P out each Tone = +21 dbm [1] F2 = 91 MHz Mismatch Tolerance, No Damage [1] P out = +28 dbm 7:1 any phase, 2 sec duration BV EBO Emitter-Base Breakdown Voltage I E =.2 ma, open collector V 1.4 BV CBO Collector-Base Breakdown Voltage I C = 1. ma, open emitter V 16. BV CEO Collector-Emitter Breakdown Voltage I C = 5. ma, open base V 9.5 h FE Forward Current Transfer Ratio V CE = 3 V, I C = 18 ma I CEO Collector Leakage Current V CEO = 5 V µa 15 Note: 1. With external matching on input and output, tested in a 5 ohm environment. Refer to Test Circuit A. 4-44
3 AT Typical Performance, T C = 25 C Frequency = 9 MHz, V CE = 4.8 V, I CQ = 5 ma, CW operation, Test Circuit A, unless otherwise specified. OUTPUT POWER (dbm) Γ source = Γ load = P out η c INPUT POWER (dbm) Figure 1. Output Power and Collector Efficiency vs. Input Power. COLLECTOR EFFICIENCY (%) OUTPUT POWER (dbm) Γ source = Γ load = V 3.6 V V INPUT POWER (dbm) Figure 2. Output Power vs. Input Power Over Bias Voltage. COLLECTOR EFFICIENCY (%) Γ source = Γ load = V V 4.8 V INPUT POWER (dbm) Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. OUTPUT POWER (dbm) Γ source = Γ load = T C = +85 C T C = +25 C T C = 4 C INPUT POWER (dbm) Figure 4. Output Power vs. Input Power Over Temperature. IMD (dbc) Γ source = Γ load = IMD 3-45 IMD OUTPUT POWER/TONE (dbm) Figure 5. IMD 3, IMD 5 vs. Output Power Per Tone. OUTPUT POWER (dbm) P in = +19 dbm Γ source = Γ load = η c P out FREQUENCY (MHz) Figure 6. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 9 MHz, then Swept over Frequency COLLECTOR EFFICIENCY (%) RETURN LOSS (db) Γ source = Γ load = Output R.L. Input R.L FREQUENCY (MHz) Figure 7. Input and Output Return Loss vs. Frequency. 4-45
4 AT Typical Large Signal Impedances V CE = 4.8 V, I CQ = 5 ma, P out = +28. dbm Freq. Γ source Γ load MHz Mag. Ang. Mag. Ang Ccb (pf) Vcb (V) Figure 8. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model B CPad CPad C CPad B Lb1.2 Ω Lb2 Rb2 B Cbc Die C Lc1 C E1 E2 Die Area = 1.2 CPad =.43 pf E1 E2 Cbe Cce Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value E E E Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC Value 1E E E E Label Cbc Cbe Cce Lb1 Lb2 Rb2 Le1 Lc1 Value.9 pf 1.2 pf.48 pf 1.53 nh.45 nh.1 Ω.38 nh.47 nh Le1 E.2 Ω 4-46
5 AT Typical Scattering Parameters, Common Emitter, Z O = 5 Ω V CE = 3. V, I c = 2 ma, T c = 25 C Freq. S 11 S 21 S 12 S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang V CE = 3.6 V, I c = 2 ma, T c = 25 C V CE = 4.8 V, I c = 2 ma, T c = 25 C Typical Performance GAIN (db) S 21 2 MAG GAIN (db) S 21 2 MAG GAIN (db) MAG S FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 3.V, Ic = 2 ma FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 3.6V, Ic = 2 ma FREQUENCY (GHz) Figure 11. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 4.8V, Ic = 2 ma.
6 AT Typical Performance, T C = 25 C Frequency = 18 MHz, V CE = 4.8 V, I CQ = 15 ma, CW operation, Test Circuit B, unless otherwise specified. OUTPUT POWER (dbm) Γ source = Γ load = P out η c COLLECTOR EFFICIENCY (%) RETURN LOSS (db) Γ source = Γ load = Output R.L. Input R.L INPUT POWER (dbm) Figure 12. Output Power and Collector Efficiency vs. Input Power FREQUENCY (MHz) Figure 13. Input and Output Return Loss vs. Frequency. AT Typical Large Signal Impedances V CE = 4.8 V, I CQ = 15 ma, P out = +25. dbm Freq. Γ source Γ load MHz Mag. Ang. Mag. Ang
7 Test Circuit A: Test Circuit Board 9 MHz 38.1 (1.5) T1 C1 INPUT R1 C3 R2 R3 C2 PA3 DEMO L1 R4 C4 R5 C5 L2 C8 C9 C6 C7 B MFG141 9/96 C1 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 R3 R4 R5 T1 L1 L2 1. pf 1. pf 1. nf 6.8 pf 1. nf 1. pf 2.7 pf 1.5 µf 1. µf 1. pf 75. Ω 1. Ω 1. Ω MBT 2222A 18. µh 18. µh CW Test V CE = 4.8 V I CQ = 5. ma Freq. = 9 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit A: Test Circuit Schematic 9 MHz 75 Ω CW Test V CE = 4.8 V I CQ = 5. ma Freq. = 9 MHz B C E DC Transistor 1 nf 1 Ω 1 Ω 18 µh 1 pf 1 pf 8 Ω 8 Ω 9 MHz 9 MHz 1 nf 1.5 µf 1 µf 18 µh RF IN 1 pf 5 Ω 5 Ω = (.784) 2.7 pf 1 pf RF OUT 6.8 pf = 5.38 (.212) 4-49
8 Test Circuit B: Test Circuit Board 18 MHz 38.1 (1.5) T1 C1 INPUT R1 C3 R2 R3 C2 PA3 DEMO L1 R4 C4 R5 C5 L2 C8 C9 C7 C6 B MFG141 9/96 C1 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 R3 R4 R5 T1 L1 L2 1. pf 1. pf 1. nf 3. pf 1. nf 1.4 pf 1. pf 1.5 µf 1. µf 1. pf 35. Ω 1. Ω 1. Ω MBT 2222A 18. µh 18. µh CW Test V CE = 4.8 V I CQ = 15. ma Freq. = 18 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit B: Test Circuit Schematic 18 MHz 35 Ω CW Test V CE = 4.8 V I CQ = 15. ma Freq. = 18 MHz B C E DC Transistor 1 nf 1 Ω 1 Ω 1 pf 1 pf 1 nf 1.5 µf 1 µf 18 µh 18 µh 8 Ω 8 Ω 18 MHz 18 MHz RF IN 1 pf 5 Ω 5 Ω = 1.49 (.413) 1.4 pf 1 pf RF OUT 3. pf =.89 (.35) 4-5
9 Part Number Ordering Information Part Number No. of Devices Container AT TR1 1 7" Reel AT BLK 25 Carrier Tape Package Dimensions MSOP-3 Surface Mount Plastic Package 3.12/3.23 (.123/.127) R.25 (.1) MAX.18/.25 (.7/.1) SEE DETAIL A 4.62/5.3 (.182/.198).76 REF (.3) 2.64/2.82 (.14/.111).51 (.2) DIA X.15 (.6) DEEP REF PIN 1.76 REF (.3) 1.91 (.75) BASIC 4.8/5. (.189/.197) 1.9/1.42 (.43/.56) 1.22/1.6 (.48/.63) TOP VIEW SEATING PLANE.58/.69 (.23/.27) LEAD TIP COPLANARITY.1 (.4) SIDE VIEW.1/.25 (.4/.1).41/.86 (.16/.34) DETAIL A R.2 (.8) MIN R.2/.33 (.8/.13).25 (.1) GAUGE PLANE SEATING PLANE MIN/8 MAX NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 4-51
10 Tape Dimensions and Product Orientation for Package MSOP-3 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 2. ±.5 (.79 ±.2) 1.75 (.69) 4. (.157) 1.5 (.59).3 ±.5 (.12 ±.2) 5.5 ±.5 (.217 ±.2) 12. ± (.472 ±.12) (.25) R.3 (.12) R.5 (.2) TYP 8. (.315) 1.5 (.59) 5.2 (.25) 1.75 (.69) NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES:.X ±.1 (.XXX ±.4) 4-52
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