VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
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1 FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 28, 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic 2stage GaNHEMT DESCRIPTION The SGFCF2002SD is a partially prematched 20W GaN amplifier with an integrated 2W driver stage. It is housed in a lowcost plastic package. The two stage amplifier offers high power and high gain, as well as excellent efficiency. It is suitable for use in broadband applications from DC to 3 GHz. Userdefined input, interstage and output matching circuits allow the performance to be tuned for specific band of interest. ABSOLUTE MAXIMUM RATINGS Item Symbol Condition Rating Unit Operating oltage DrainSource oltage GateSource oltage Forward Gate Current Total Power Dissipation of 2 nd stage Storage Temperature Channel Temperature DS DS * GS * IGF* 2 Pt * Tstg Tch * : Case Temperature Tc=25deg.C * 2 : Gate Current for 2 nd stage GS=8 RG=15ohm RECOMMENDED OPERATING CONDITION < to ma W deg.c deg.c Item Symbol Condition Limit Unit DC Input oltage CW Input Power Channel Temperature DS Pin Tch < 50 < Pout Gp +1.5 < 200 dbm deg.c ELECTRICAL CHARACTERISTICS ( Case Temperature Tc=25deg.C ) Item Symbol Condition PinchOff oltage p1 (1 st stage) p2 (2 nd stage) DS=50, IDS1=0.9mA DS=50, IDS2=7.2mA Limit Min. Typ. Max Unit Saturated Power Drain Efficiency Power Gain Pout DE Gp DS=28, IDS1(DC)=15mA, IDS2(DC)=120mA, f=1.0ghz, Pin=16dBm, CW dbm % db Saturated Power Drain Efficiency Power Gain Pout DE Gp DS=50, IDS1(DC)=15mA, IDS2(DC)=120mA, f=3.0ghz, Pin=17dBm, CW dbm % db RoHS COMPLIANCE Yes 1
2 ELECTRICAL CHARACTERISTICS ( Case Temperature Tc=25deg.C ) Item Symbol Condition Saturated Power Drain Efficiency Power Gain Pout DE Gp DS=50, IDS1(DC) 0mA, IDS2(DC) 0mA, f=3.0ghz, Pin=15dBm, PW=200μs, Duty=10% SGFCF2002SD Plastic 2stage GaNHEMT Limit Min. Typ. Max Unit dbm % db Load Mismatch Tolerance SWR DS=50, IDS1(DC)=15mA, IDS2(DC)=120mA, f=3.0ghz, Pin=17dBm, CW 10:1 SWR Thermal Resistance* Rth1 (1 st stage) Rth2 (2 nd stage) Channel to Case at 3W PDC Channel to Case at 22W PDC deg.c/w deg.c/w *Note: Rth samples size 10pcs. Criteria(accept / reject)=(0 / 1) PIN ASSIGNMENT and Z2D PACKAGE DIMENSION Full Mold Plastic Package Top iew Top iew Pin No. Function gg2/rfin of 2 nd stage dd1/rfout of 1 st stage gg1/rfin of 1 st stage N.C. N.C. dd2/rfout of 2 nd stage Bottom iew 2
3 RF DS=28 Output Power and Drain Efficiency vs. Input Power DS=28, IDS1(DC)=15mA, IDS2(DC)=120mA, f=1ghz, CW SGFCF2002SD Plastic 2stage GaNHEMT Gain vs. Input Power DS=28, IDS1(DC)=15mA, IDS2(DC)=120mA, f=1ghz, CW RF DS=50 Output Power and Drain Efficiency vs. Input Power DS=50, IDS1(DC)=15mA, IDS2(DC)=120mA, f=3ghz, CW Gain vs. Input Power DS=50, IDS1(DC)=15mA, IDS2(DC)=120mA, f=3ghz, CW 3
4 RF to 3.1GHz, DS=50 SGFCF2002SD Plastic 2stage GaNHEMT Output Power and Drain Efficiency vs. Frequency DS=50, IDS1(DC) 0mA, IDS2(DC) 0mA, Pin=15dBm, Pulse Width=200μs, 10%duty Test Fixture for 2.7 to 3.1 GHz 4
5 1 st stage IDS(DC)=25mA, f=0.5 to 4.5GHz Zl = Zs = 50ohm Marker : 3GHz SGFCF2002SD Plastic 2stage GaNHEMT Reference DATA Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG
6 2 nd stage IDS(DC)=125mA, f=0.5 to 4.5GHz Zl = Zs = 50ohm Marker : 3GHz SGFCF2002SD Plastic 2stage GaNHEMT Reference DATA Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG
7 SGFCF2002SD Plastic 2stage GaNHEMT Ordering Information Part Number MOQ MOU Packing Style SGFCF2002SDT3 1000pcs. 1000pcs. SGFCF2002SDT2 200pcs. 200pcs. SGFCF2002SD 20pcs. 20pcs. Tape and Reel (16mm width Tape) Tape and Reel (16mm width Tape) Tray (4inch) Note : *MOQ stands for Minimum Order Quantity. *MOU stands for Minimum Order Unit size. Moisture Sensitivity Level Level Time Floor Life Condition 2a 4weeks after open the package 30deg.C/60%RH 7
8 SGFCF2002SD Plastic 2stage GaNHEMT Package Markings Year code Year Code X Y Z A B C D E F Note: Code letter is cycling 25 alphabet without Q. Month code Month Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec. Code H M N P R S T U W X Y Z 8
9 SGFCF2002SD Plastic 2stage GaNHEMT Index and Tape / Reel Configuration (Part Number : SGFCF2002SDT2, SGFCF2002SDT3) Note : Baking of Tape & Reel is possible by following condition. 1. Recommended Baking Condition : 125deg.C, 8hous 2. Upper limit number of times : 5 times * Reference standard : JIS standard(jis C 08063) 9
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
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