Ge Si(100) Si... 39

... 6 1 Ge Si... 11 2 Ge/Si Ge... 16 3 -, Ge/Si Ge... 19 3.1 -... 19 3.2... 23 3.2.1... 23 3.2.2 -... 27 3.2.3... 28 3.2.4... 31 4 Ge Si36 4.1 Ge Si(100) Si(111)... 36 4.1.1 Ge Si(100)... 36 4.1.2 Ge Si(111)... 37 4.2 SiGe Si(100)... 39 4.2.1 SiGe Si... 39 4.2.2 SiGe Si(100)... 40 4.3 Si SiGe... 45 4.4 Ge Si... 46 4.5 Ge/Si... 52 4.5.1... 52 4.5.2... 54 2

4.5.3... 55 5 «100»... 60 5.1 «-100»... 60 5.1.1 IS 50-LO plus.... 62 5.2... 67 5.3... 70 5.4... 72 5.5... 75 5.6 Si Ge... 77 5.7 Ge... 79 5.8 Si1-xGex... 82... 84... 89... 93 3

100., 5., 56., 1., 39, 1. -,,,,,, - Ge,. Ge/Si Ge,. - -. :, -,. Ge/Si Ge, SiGe Si(100) - «-100». : 1. Si. 2. -. 3. «-100». 4.. 5.. 6. Si1-xGex. 7.,. 4

: - ; ; ; - ; ; ; ; - ; ; ; ;. 5

-, -. - ( ),.,,.,,,.,,. 90 %,,,.,,. -...,,, (, 6

).,.,.,,,,.. ( ),,..,, -. ( ). ( ) SiGe/Si,. SiGe, ( ).,,,., SiGe/Si,. 7

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,. 1. - Ge Si(111) ё 350-550, 180 210 (υ = α βi ) Ge 0,023-0,107 Å/ α=2 10-6 Å/ β=0,051-1. 2. - Si1-xGex Si(100) ё 550 Si1-xGex 0 x 0,4 10-30. 33 150, Ge Si(111). Si1-xGex 0 x 0,4 x Ge Si., Ge Si -,, Si1- Ge x. : ( Ge/Si Ge, Si1- Ge x). 9

5. Ge Si. Ge/Si Ge. -, :, -,. Ge/Si Ge, : Ge, Ge Ge, Ge/Si.., -,, Si1-xGex.. 10

1 Ge Si - -, 4%,. -,, III V (GaAs, InP..)., Ge ( ), Si. Ge Si : 1) Ge; 2), - ; 3).,, [1].. 1,.. 11

10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 1- «www.sciencedirect.com» 2006-2016.,, quantum dots [2] (0D) ( 2). x, y, z. 2 [3]., [3]. E lmn 2 2 2 2 2 2 2 2 2 l n m, 2 2 2 2md x 2md y 2md z l, m, n = 1, 2, 3, ; dx, dy, dz. Elmn. ( 3). g(e) - 12

3 [4] 1992.,. Ge-Si InAs-GaAs (10-100 ) 10 10-10 11-2. 4 Ge-Si. [1]. 400 350 300 250 200 150 100 50 0 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 4 - «www.sciencedirect.com» 2006-2016., Ge (GeSi) Si, [2] 13

III V. : 1) III V; 2) I ( ), ; 3),. III-V InAs-GaAs. 5, Ge Si, - 2006-2016. 140 120 100 80 60 40 20 0 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 5 - «www.sciencedirect.com» 2006-2016., Ge (GeSi) Si - [2] - - (3D) ( - )., ( 14

),, ( - ),, -,, 1974. ( ), InGaAs-GaAs., ( ) 3D, [1]. 15

2 Ge/Si Ge - -. -., [5].,..,, Ge/Si., -, Ge ( ( )).,,,,,,.,,,.,, Si,. Ge Si, Ge/Si. 16

,,. I-,,,. I- InAs/GaAs. I- 6( ) [6]. 6 I- ( ) GaAs/InAs II- ( ) Ge/Si [6] II-,. II- Ge/Si. II- 6( ) [6]., Ge/Si II.. Ge, Si.., Ge/Si Ge,., 17

,, [5]. 18

3 -, Ge/Si Ge 3.1 - " "- ( επ αξ - ).. ( ).,. ( ),.,,.,,.,..,. - ( ) ( ),. (Bell Laboratories, ). 7., 10 8 10 10. -, 1500., (77 ), 19

.. ( ),. ;. -.,,,,,.,.. 1 /. 7 - [7], ( ),,.,. ( 20

).., ~ 1/10..,,..,, ( 8).,. 8 - [3] 8, 1 2; 3 ; 4 ; 5,. I, II, III.,.,. 21

.,. 3,,.. : 1.. 2.., 10 5 10 6. 3.. 4.,.,.,, ( э я). [3,7]., ( )., ( ).,.,,. 22

( 9 ).,,, - ( 9 ). 9 [3] - ( 9 )... Ge Si 4%, Ge Si. 3.2 3.2.1., (. reflection high-energy electron diffraction., RHEED), 5 100, [8]., 1 5,,,.., 23

50 100, 100, 1 1 [9].,, (, 1 5º)..,...,... d d = l λ / r, l, r (,, ). ( ),,. ё ё ё,. ё,. ё (, ) - 24

ё ( ). ё, [8]. 10.,.,, - [9]. 10 [9] 11. 1 5,..,,. 25

11 [9],.,,. -...,,. -, ( ). -,. -, 26

,.,.,. (, ),.,.,,., [9]. 3.2.2 - - ( ). - Mr, (...) (Da). - (m/z)..,, m/z,, [10].,, - 27

-.,,, -. - (,,, ) ( ). - -,,, -. -,.. - - ( ) [11]. 3.2.3 -,,, ( ) ( ) ( 12).,,., [12]. 12 - [12] 28

. - ( 13). 13 - [12],,, ( 14). ( ),.,, [9]. 14 - -., - [9] 29

- : ( ), ( ).., -.,. (100 400 ). -.,.,. : 1. -. 2.,. 3.. 4.. 5.,. 6.,,. 7. ; ; ;.,,. 30

( ), - - ( )., 5 100,.. - -,.. 3.2.4 (, XRD X- ray diffractometry),. ( ),. - : nλ = sinθ, n -,, λ, d, θ,. - 15,. 15 [13] 31

, θ,, nλ,..., : sinθ = λn, θ. ( 16). :,,,. 20-50,. ( ). 16 -. 1., 2., 3., 4., 5., 6. [13].,.,,,.. ( ) [13].. 17 32

. 17, 10-5 10-6..,. 4, ё 5. ё 2, 1. 3 [13].,.,,., [13]., (,, ),. ё, ё. ё.,, -,, 33

: (F), (P) (S) ( 18). ( ). 18 -. F, P S [13] ( ). /,,.,,,. 2, - θ-2θ- я,.,,, [13]. ( 2θ ~ 5 34

100 ).. 2θ..,,., [13]. : 1.,. 2.. 3.. XRD : 1.. 2.. 3.. 4. (, ). 5. ё. 6. ё. 7. ( ). 8. ё. 35

4 Ge Si, 3D,.,.,,. 4.1 Ge Si(100) Si(111) 4.1.1 Ge Si(100) Ge Si ( 19), :,,. 19 Ge Si [5],.,, :. 850º Ge. 450º - 600º, 36

..,.,,, ё ё Si Ge,.. Ge,, Si,,. [5]. 4.1.2 Ge Si(111) Ge Si(111) 250 400 (7 7) (5 5) ( 20). 20 Si (111) 5 5 7 7 [9] 37

Si(111) (7 7), : (7 7) (5 5). 1 Ge (1 = 3,55 Å), (5 5)., 3,, : 7 7, 5 5. 3.5 3D, (7 7). - 5 5.,, Ge Si(111) : (7 7) (5 5), ((7 7) (5 5) (7 7)). 250 600 C (5 5). ё., (7 7), (2 8) ( 21) [14]. 21 Ge (111) 2 8 [9] (111) ё Ge., (5 5) 38

, [14]. 4.2 SiGe Si(100) 4.2.1 SiGe Si : f = a Ge a Si a Ge +a Si [15], a, Ge Si. 1-2, 5%, f = a Ge a Si a Si [15].,...,., [15]., Si1-xGex.. Si1-xGex. -,. ( ). 39

, ( 22)., 45 1/2. (001). 22, ( ) ( ) [15] 4.2.2 SiGe Si(100) GexSi1-x, GexSi1-x,,. x ( Ge), dgesi ( ). GexSi1-x Si : (hut-, dome- ), ( ). Ge GexSi1-x Si(100) 23 [16]. Matthews and Blakesley dmb 40

., (T 750 o C).,,,,. ddt T=550 o C dmb. GexSi1-x, [5]. [17] GexSi1-x 550.,,.., 0.2% 0.8% hut dome,. hut-, dome- 550 70. 23 Si1-xGex Si(001) Ge. (d =185Å, 78Å, 31Å, - x=0.15, 0.3, 0.6, ) Matthews Blakesley x: 0.15, 0.3, 0.6, - GexSi1-x, [16] 41

GexSi1-x,,, ( 24). 24 GexSi1-x (, ), Ge [17] Si Ge - Si1-xGex. 2 10-10 5 10-8. 5 Å/. T = 550 750 ºC Si1-xGex x x. x x,.. Ge Si1-XGeX. 25 Si1-xGex Ge. Ge,. ( ), [15]. 42

Si1-xGex,,,. 25 Si1-xGex 100 (x) [15] [1 0] GexSi1-x Si(100) = 450 C, 26., Si. Si1-xGex. Ge. Ge Si,.. = 1,0., Si1-xGex 43

( ), Si1-xGex. Ge. Si- Si1-xGex. 26 [1 0] GexSi1-x Si(100) = 450 C [15] Si1-xGex/Si Si. Ge, Si Si1-xGex. Si-., Si1-xGex Si. [18] [19],,,. :. 44

4.3 Si SiGe 10 20,.,,., ( ). GaAs. IBM 1987., -.. 15-20 SiGe/Si, Si - ( 1,3-1,55.)., -,., 1,3-1,55, p-i-n- InGaAs/InP. Si [15]. 1,3-1,55 Si p-i-n., GeSi/Si (, ),,,, :, Si ( - ), ( )., GeSi 45

-, - Si. 27 Si, GeSi. 27 Si, GeSi ( - GeSi ) [15]. 4.4 Ge Si,.,,,, 4%. (,, ), -.,.,, [5]. 46

, -,. (3D).,.., hut- dome-. Hut- {105} 10-20 1-2. 28 hut-,. 28 - hut-, Ge Si [20] hut- :, [21]. - ( - ) 29. ё 29 (, ),, Tgr = 530, hge = 11Ǻ Tgr = 360, hge = 10Ǻ;. 29 ( ), Tgr = 360, hge = 14Ǻ, ( ). 29 ( ), Tgr = 360, hge = 6Ǻ 47

ё. ё ё, ё {105}.,,, 29 ( ), 29 ( ) ( ), [21]. 29 - - ; : Tgr = 530, hge = 11Ǻ ( ); Tgr = 360, hge = 10 Ǻ ( ); ( ): Tgr = 360, hge = 14Ǻ ( );, ё ( ) ( ): Tgr = 360, hge = 6Ǻ ( ё ) [21] 30 -. hut-, {105},.. 1 : 10.,..,,, 48

Ge. -,,. 30 - - ; : Tgr = 530, hge = 11Ǻ ( ); : Tgr = 360, hge = 10Ǻ ( ); ( ), ё : Tgr = 360, hge = 8Ǻ ( ) [21],,,,,.,,,,,.. ё, ( ).,,, ( ) Si Si/Ge - ё (, ) Ge,., Ge/Si. Si in 49

situ Ge, ё ё Ge [21]. 30( ) (Tgr = 360, hge = 8Ǻ)., hut- ( 31) [20]. 31 - hut- 1990 [20] -,, 29(, ) 30( ),.,.. ( -.) hut-,. [20], Ge.., 29( ) 30( ) [21]. hut-,.,., hut-. 50

32, 14( ).,, 10. 32 ( ) ( ), 29( ) [21], 1,6,., :,, hge (. - 29).,, hge.,,.. 51

dome. {113} {102} : 50-100. -., - ( ),,,. «dome»,.,, Ge Si (001) -, ( 33). 33 - dome- [22]. 4.5 Ge/Si 4.5.1 Ge/Si,, Si.,, Ge 700, 100 50% [23], 300 ~ 15 [24], Ge. 52

34 Ge [25] 34,.,, > 400 C, hut-,, 250-350.,, Ge. [26] 300,,, [23], hut- ( ), 15,. Ge, ( 34). Ge,,,. [27] ё., ё. Si/Si(111), Ge/Ge(111)., 53

, -, ё ё, ё : - ё., ё. -.,,, - ё. :...,,., ё, - [14]. 4.5.2.,,, Ge,,,, [28]. ~5 10 11-2 [29]. Ge/Si(001) : 1) 2.5 ; 2), ; 54

3) [100] [010] [14]. Ge/Si, Ge,, hut- [14]. [30] 2 10 12-2 Ge Si,. - ( ). [31] (10-15 ). 4.5.3,..,, ( 35). 35 [32] 55

.,.,..,,.,.,. : Е = Е + Е + Е, Е - ( D ); Е = C1D -1 - ; Е = - C2D -1 ln(d/a) -, ( - ).,, D [32]. (, ) GaAs{(311) (775)}, Si(211), (110), Ir(110).. -, 56

. -. (, ),. - (step-bunching),, ( 36)., Si(111), GaAs{(001) (100)}, Pt(100) [32]. 36 [32] GaAs(100) 7 15 (1 0.14 ).,.., GaAs(001) [010], : [110] [ 00]., [32].,,,. 57

( ) GaAs-AlAs,. : Е = Е + Е + Е + Е.,, Е.,,. 37 [32]. 37. 1 ; 2 [32], ( 37, ). AlAs, GaAs(001)., ( 37,, ). GaAs AlAs{(001) (311)} AlAs GaAs(311). 58

GaAs AlAs AlAs.. ( 37, )..,,,, [32].,, Ge Si(111), [ 2] [11 ], 350 500 [33]. 59

5 «100» 5.1 «-100» Si/Ge -. Ge - (4,2 %)., :,,.,,,. «-100» - -,. 38. - ( ) - ( - )., -.,, (, ), ( ) ( - ). 60

38 - «-100» -. «100» -. (B Sb). ( ) 2 10, 5-8.,, Si. (BN). - 100,.. Ge Si.,,, 61

,,.,,, -..,.. -,..,, ( ), Si Ge....., Si. 5.1.1 IS 50-LO plus. -,,,, -.. (, ), ( ). 100 62

6000.,. [34-36].,. : -,. ( ) - ( ) 10-2 10-6.; -, ; -, (,.), ( ) ; -,, ; - ( 250 ).. λ T,, 63

,., : ), ( )., :,, h, λ, Т.,, = 1 ( ). 1,,.,,.. = f(λ,t),,,,.. ( 39) [34-36]. 39 - [34],,,, 0.8-0.95, 64

,., 0.1, 0.9-0.95.,. ),,,.,,.,,,,. ),.., -, ( ), -, (, ). ), ( ). ),. 65

IS 50-LO plus ( 40) -,,,.. 550 1400. : - 1 ; -,. 0,45 ; - ( ) ; - ; - ; - RS-232/RS485; -. 40 - IS 50-LO [37], -., -. 250. 66

. -., RS232/RS485. : ),,. ).,. ) RS485. ).. 5.2,,, : 1) :,,. 67

,.,. 850º SiO2,.,,. 1.. 2 : NH4OH:H2O2:H2O = 1:1:10,... ( )... : 1. 300 450 ; 2. 30 ; 3. 30 ; 68

4. 5-10.. : 1. 100 450 ; 2. 10 ; 3. 1:10 5 ; 4.,. 2-3. : 1. NH4OH:H2O2:H2O = 1:1:10 10 (SiO2) 2., 10 ; 3. 100 200 ; 4. ; 5.,. - «-100». 2) : 800 C ( Si(111)-7x7 Si(111)-1x1 830 C)., 69

,. 5x10 13 / 2..,,. Si(111)-7x7. 3) : 100. 600 C. - 10 15 / 2. 5.3,.,..,.. :. 0,543 Si 0,565 Ge [9]. Si (100), Si, ( 41 ( )). Si (100), 70

, ( 41 ( )). 2 1. 41 C, : ) Si (100) 1 1; ) ( ) Si (100) 2 1 [9] Si (111) : 2 1 7 7,, 7 7,. 2 1 7 7 400 C. 42, Si (111) 7 7.,,. 42 Si (111) 7 7 [9] 71

7 7 850 C, «-» «1 1». 7 7 [9]. 5.4. «-100». : 20, 1,54, 140... Si(111) (7 7) Si(100) (2 1),,. 27. 43 ) 2 1, (100). 43 ) 7 7, (111). 43 ) hut- {105}, ( 2, ) (100) (111). 43 ) dome-. 72

Si (100) ( ) (2 1) Si (100) ( ) (7 7) Si (111) ( ) Ge Si (100), ( ) Hut- Ge Si (100) ( ) Dome- Ge Si (100) ( ) 43,,, ( - ),. 43.,.. in situ [38]. 73

43 [38],,.,. ( ) ( ).,., [38]. 74

5.5., : (. In = 156 ), (. Sn = 232 ), (. Pb = 327 ) (. Al = 660 ). 550, IS 50-LO plus., ( 44). 44 - «-100».,, ( 45). 45 75

, : (. In = 156 ) U = 10,1 I = 10,9 A; (. Sn = 232 ) U = 11,7 I = 12,1 A; (. Pb = 327 ) U = 14,5 I = 14 A; (. Al = 660 ) U = 26,8 I = 21,8 A. IS 50-LO plus, ε = 17,3%,, 660..,, Si(111) 7 7 850 ( 46, ), «1 1» ( 46, ). 7 7 [9]. 46 ( 47). 76

47, - 2010., - IS 50-LO plus, -, - 7 7 1 1, 835, 30.,,, 5. 5.6 Si Ge, ( ). Si Si(111). 170. Si 700. Si ( 48). Si.,,, 77

Å/. Si Si(111) 170 0,12 Å/. 48 Si Ge Si(111) Ge 180. Ge ( 49). 49 Ge Ge Si(111) 180 0,06 Å/. 78

5.7 Ge,. Ge Si(111). 180 210. Ge 400.. 50 Ge Si (111). 50 Ge Si (111) Viewer 12 ( 51). Ge. 52, 200. 79

51 Ge Si Viewer 12 ( - 200 ) 52 Ge Si ( - 200 Ge Si.,,. T1 Ge Si, T2 SiGe,,. 80

Ge Si(111) 200 0,04 Å/. Ge Si(111). 1. 1 Ge Si(111), I, T1, T2, υ1, υ2 Ge Si I ( A) T1 (c) υ1 (Å/ ) T2 (c) υ2 (Å/ ) υ (Å/ ) 180 150 0,023 146 0,024 0,0235 190 155 0,022 130 0,027 0,0245 200 92 0,038 86 0,041 0,0395 210 33 0,107 34 0,104 0,1055 53 Ge Si(111) Ge Si(111) Ge υ = 81

α βi ( 53). α 2 10-6 Å/, β 0,051-1., : - Ge Si(111) ё 350-550, 180 210 (υ = α βi ) Ge 0,023-0,107 Å/ α=2 10-6 Å/ β=0,051-1.5.8 Si1-xGex 5.8 Si 1-x Ge x Si1-xGex. PANalytical X'Pert PRO ( 54)., Si1-xGex ( 55). Si1-xGex 25 ( 55, ). 54 PANalytical X Pert PRO [39] 82

55 Si1-xGex x, Si0.5Ge0.5, - Si0.6Ge0.4, - Si0.75Ge0.25, - Si0.8Ge0.2, - Si0.85Ge0.15, -,. Si, ω/2. x. 100%,,, 550 Si1-xGex 25 0.15 < x <0.5 100%. x ω/2 Si. - «-100» 83

Si1-xGex. Si(100) 100 Si 85, 29. Si1-xGex 25. 10 Si. x,, 0.16. x : 0,119 Å/ Si 0,024 Å/ Ge. 56 Si0.85Ge0.15 ( ) Si0.84Ge0.16 ( ) PANalytical X Pert PRO ( 56, ). ( 56). Si1-xGex x=0.15.,.,. Si Si1-xGex ( 55, ). : - Si1-xGex Si(100) ё 550 Si1-xGex 0 x 0,4 10-30. 84

.,, :,,,..,,,, ( ), 2/3.,.,,. Ge Si -., : 1. - Ge/Si, ( ), Si1-xGex Si(100). 2.. 3. - Ge/Si Ge/Si Ge, : 85

Ge, Ge Ge, Ge. 4. «-100». 5. IS 50- LO plus.. 6. Si Ge Si(100) Si(111).. 180 210 Ge 0,023 0,105 Å/. 7. Si1-xGex. Ge/Si Ge Si1-xGex IS 50-LO plus, Si1-xGex. : 1. - Ge Si(111) ё 350-550, 180 210 (υ = α βi ) Ge 0,023-0,107 Å/ α=2 10-6 Å/ β=0,051-1. 2. - Si1-xGex Si(100) ё 550 Si1-xGex 0 x 0,4 10-30. 12, 1 86

Scopus Web of Science: 1...,.. Si/Ge Ge Ge. //, -21. 2015. - : -.. 201-202. 2...,.. Ge/Si Ge - // 53- :. 2015.,.. 43. 3...,.. Si/Ge Ge. // XII -. 2015. : -.. 97-99. 4. Pishchagin A.A, Serokhvostov V.Yu., Kokhanenko A.P., Voitsekhovskii A.V., Nikiforov A.I., Dzyadukh S.M. Investigation of Ge/Si with Ge quantum dots structures using the methods of admittance spectroscopy // 3rd International School and Conference Saint-Petersburg OPEN 2016. Book of abstracts. 2016. St. Petersburg Academic University RAS. Pp. 82-83. 5...,.. Ge Si -. // 54- -2016:. 2016.,.. 30. 6. Pishchagin A.A, Izhnin I. I., Fitsych E. I., Voitsekhovskii A.V., Kokhanenko A.P., Serokhvostov V.Yu., Dzyadukh S.M., Nikiforov A.I. Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots. // Abstract Book of participants of the International Summer School and International research and practice conference, 24-17 August 2016. Lviv: Eurosvit, 2016. Pp. 387. 7. Pishchagin A.A, Voitsekhovskii A.V., Kokhanenko A.P., Serokhvostov V.Yu., Dzyadukh S.M., Nikiforov A.I. Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots // Journal of Physics: Conference Series 741 (2016) 012015. 8...,..,..,..,..,.. 87

Ge/Si Ge. // XI X,,, 2016.. 2016.,..178. 9. Pishchagin A.A, Lozovoy K.A., Serokhvostov V.Yu., Kokhanenko A.P., Voitsekhovskii A.V., Nikiforov A.I. Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods // Actual problems of radiophysics. Proceeding of the VI International Conference APR-2015. 2016. London : Red Square Scientific. Pp. 45-48. 10...,..,.. Ge Si -. // XXI :,,. V -. 2016.,.. 290-292. 11...,..,..,.. Ge Si(100) Si(111) -. // 55- -2017:. 2017. :.. 15. 12...,..,..,... // 55- -2017:. 2017. :.. 15. 88

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32...,..,..,.. /.....:, 2001. 160. 69. 33...,.... Ge Si(111) -, 2006,.48, 9,. 1716-1722. 34..., :.-.:, 1978.-704.,. 35...,..,..,.-.-.:, 1993.288. 36...,..,. 197. 37. IS 50-LO plus, IGA 50-LO plus. [ ]. http://diagnost.ru/wp-content/uploads/2014/12/is-iga-50-loplus-prospekt.pdf,. 38..,,, /...,...:, 2006. 552. ISBN 5-9221-0719-4. 39. Panalytical XPert PRO[ ] // URL: http://http://sites.lebedev.ru/ru/sces/3173.html ( 24.05.2017). 92

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