Current Conversion Characteristics Research on Pulsed Power Switch Reversely Switched Dynistor
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1 27 30 Vol.27 No.30 Oct Proceedigs of the CSEE 2007 Chi.Soc.for Elec.Eg (2007) TN86 A ( ) Curret Coversio Characteristics esearch o Pulsed Power Switch eversely Switched Dyistor YU Yue-hui 1, LIANG Li 1, YAN Jia-sheg 2, PENG Ya-bi 1 (1. Departmet of Electroic Sciece ad Techology, Huazhog Uiversity of Sciece ad Techology, Wuha , Hubei Provice, Chia; 2. Xiagfa TECH Semicoductors Co. LTD, Xiagfa , Hubei Provice, Chia) ABSTACT: I order to produce ad cotrol high repetitive pulses of pulse width at µs, s ad power beyod MW, a ew structure of great power ad super high speed semicoductor switch reversely switched dyistor(sd) applied to laser diode (LD) pulsed source was researched. SD has characteristics of quick ad uiform tur-o o whole area, ifiite coectio i series, high power, high efficiecy of covertig ad log lifetime. The tur-o mechaism ad high desity eergy trasform characteristics, available peak curret, tur-o coditio ad pre-charge, quasi-static state dissipatio ad di/dt characteristics of SD were researched o sigle pulse experimetal platform. Accordig to experietial formula, the extreme curret experimets were doe o SDs of small diameter. The pulse curret of 19.9kA(pulse width is about 30µs) has flowed through φ 20mm SD stack. The high di/dt capability was tested by reducig iductace of mai circuit. The di/dt is ear to 8kA/µs whe discharge voltage is 3kV. KEY WODS: high power switch; reversely switched dyistor; tur-o characteristics; pulse; di/dt (SD) µs s MW SD SD di/dt ( ) ( ) Project Supported by Natioal Natural Sciece Foudatio of Chia ( ). SD φ 20mm SD 19.9kA ( 30µs) SD di/dt 3kV di/dt 8kA/µs di/dt [1-6] di/dt ka
2 30 39 [7-13] I.V.Grekhov (reversely switched dyistor SD) ka kv [14-17] Si SD ~10 10 W 10 4 ~10 5 W SD SD ( ) 1 SD 1.1 SD 1 SD + p 1~2µs 0.5~1.5kA SD µs s L + U1 C1 L p S J p + p + p + p + 1 SD Fig. 1 Structure of SD switch 1.2 SD SD S U 2 SD L + p J2 J1 U2 C2 + J 2 + J L U 1 SD J 2 p + J 3 p p + J 1 J 2 J 2 SD 2 SD SD C 1 30kV [18] 2DL ~ L D 1 L 2 + SD C1 + C2 ~ 2DL 2 SD Fig. 2 Schematic circuit diagram of SD tur-o experimet platform 2.2 SD 3 SD ( ) 3~5 246A/V s Fig. 3 /V ul/v 1kV/ 492A/ ul 3 SD Voltage ad curret characteristics of SD
3 40 27 Fig. 4 /V 4920A/ 2kV/ i SD/A 4 SD The experimetal waveform of SD peak curret /V 492A/ 500V/ 5 SD Fig. 5 Typical tur-o characteristics of isufficiet triggerig 2µs 1~2µs 2.3 SD SD 200kA SD [19] 1/3 p I = KS/[ f( t ) ] (1) m SD (1) S SD cm 2 K 2kV K=210 f t p s 4 SD 15 20mm SD 10.2kV 19.9kA ( 30µs) (1) di/dt 2.2kA/µs 1 SD 2.4 Q SD [20] cr 1 SD ( ) Tab. 1 Peak curret of SD(theoretic value) /mm S/cm 2 t p / s I m/ka Q dj b + 1 τ 1 τ Q = ( + 1) d 1 2ν cr F 1 t b ν b+ 4 2 (2) Q b=µ / µ p 2.8 dj F /dt ν = W 2 /2D p W pb p pb D p τ = 1/ 1 1 ( ν τ ) + τ p 5 SD 5 SD 2.5 SD SD 30% SD ( ) WbIF ( t) P = (3) 3 µ S bq Q ( t) p N F W b I F (t) µ p Q N Q F (t) 6 SD 6 7 GF mΩ 3 000V 1 200V 6430A 2 32mm (a) 4 (b) 2 (a) (b) (b) (b)
4 30 41 /V 1218A / /V (a)sd SD kV 7(a) 3kV 8.5kA 3µs SD di/dt 8kA/µs SD di/dt 7(b) 2kV (a) di/dt 4.5kA/µs SD SD di/dt A/ (b)sd5 1 SD5 2 6 SD Fig. 6 Quasi-static dissipatio of SD 3045A/ 1218A/ (a)u1=3kv (b)u1=2kv 7 SD di/dt Fig. 7 The di/dt characteristics of SD (a) 1.2 SD 2.6 SD di/dt SD di/dt A/µs 7 SD di/dt 0.22µF SD SD µs s MW SD SD SD SD di/dt SD di/dt 10 5 A/µs [1] [] [2] [] [3] Heesch E J M Ya K Peme A J M et al Matchig repetitive pulsed power to idustrial processes[j] IEEJ Tras. FM (7) [4] [J] (8) Shao Tao Yua Weiqu Su Guagsheg et al Experimetal study of repetitively aosecod-pulse breakdow i atmospheric air [J] Proceedigs of the CSEE (8) (i Chiese) [5] [J] (5) Li Weibo Mao Chegxiog Li Qiya et al Simulatio research o rogowski coils with SG high-power laser[j] Proceedigs of the CSEE (5) 53-57(i Chiese) [6] [J] (5) Li Ju Wag Yig Wag Zaji A mathematical model of the reusable pulsed liear magetic flux compressor for the electric gu[j] Proceedigs of the CSEE (5) 43-46(i Chiese) [7] Heesch V Ya E J M Peme K et al epetitive pulsed power to serve ao techology sustaiability ad hydroge productio [C] Digest of Techical Papers-IEEE Iteratioal Pulsed Power
5 42 27 Coferece Dallas TX Uited States [8] Wag Fei Kuthi A Guderse M A Compact high repetitio rate pseudospark pulse geerator[j] IEEE Trasactios o Plasma Sciece (4) [9] Podlesak T F Sigle shot ad burst repetitive operetio of thystors for electric lauch applicatios[j] IEEE Tra. o Magetic (1) [10] [J] (14) We Jialiag Fu Peg Liu Zhegzhi et al Theory aalysis ad parameters optimize desig of reliability tur-off of high power DC bi-directioal DC fast thyristor switch i east tokamak[j] Proceedigs of the CSEE (14) 62-67(i Chiese) [11] Sigh H Hummer C Advaced semicoductor switches for EM lauchers[j] IEEE Tras.o Magetic (1) [12] Jiag W Oshima N Yokoo T et al Developmet of repetitive pulsed power geerators usig power semicoductor devices[c] Proceedigs of the 17th Iteratioal Symposium o Power Semicoductor Devices &IC s Sata Barbara 2005 [13] GaAs [J] (4) Shi Wei Zhao Wei Zhag Xiabi et al Ivestigatio of high-power sub-aosecod GaAs photocoductive switches[j] Acta Physica Siica (4) (i Chiese) [14] Grekhov I V New priciples of high power switchig with semicoductor devices[j] Solid-State Electroics (11) [15] Korotkov S V Switchig possibilities of reverse switched-o dyistors ad priciples of SD circuitry(review)[j] Istrumets ad Experimetal Techiques (4) [16] Grekhov I V Kozlov A K Korotkov S V et al High-voltage SD switches of submegaampere curret pulses of microsecod duratio [J] Istrumets ad Experimetal Techiques (1) [17] Grekhov I V Mesyats G A Physical basis for high-power semicoductor aosecod opeig switches[j] IEEE Trasactio o Plasma Sciece (5) [18] SD [J] (11) Li Huayag Yu Yuehui Hu Qia et al esearch of applyig the switch SD to pulsed power supply[j] Proceedigs of the CSEE (11) 23-28(i Chiese) [19] SD [J] (2) Yu Yuehui Liag Li Li Moutao et al Study o tur-o mechaism ad high-curret characteristics of high-speed semicoductor switch SD[J] Trasactios of Chia Electrotechical Society (2) 36-40(i Chiese) [20] SD [J] (5) Du ufeg Yu Yuehui Hu Qia et al Ifluece of pre-charge upo SD tur-o character[j] Power Electroics (5) 84-86(i Chiese) (1946 ) yuyuehui@mail.hust.edu. c (1981 ) ( )
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Suitable for DC-DC Converters, Voltage Regulators, Decoupling Applications for Computer Motherboards, etc. Performance Characteristics
+105 C, Higher Ripple, Lower than ULG Features Higher Ripple, Lower than ULG Wide Temperature Range RoHS Compliant Applications Suitable for DC-DC Converters, Voltage Regulators, Decoupling Applications
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