HiPerFAST TM IGBT with Diode
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- Αμάραντος Ζάρκος
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1 HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C; R GE = 1 MΩ V V GES Continuous ± V V GEM Transient ±3 V 25 = 25 C (limited by leads) 75 A 11 = 11 C A 11 = 11 C 48 A M = 25 C, 1 ms 3 A SSOA V GE = 15 V, = 125 C, R G = 1 Ω M = 1 A (RBSOA) Clamped inductive V TO-264 AA (IXGK) PLUS247 (IXGX) G = Gate E = Emitter G C E C = Collector Tab = Collector (TAB) (TAB) P C = 25 C 4 W C M 15 C T stg C M d Mounting torque, TO /1 Nm/lb.in. Weight TO g PLUS247 6 g Maximum lead temperature for soldering 3 C 1.6 mm (.62 in.) from case for 1 s Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) Min. Typ. Max. V GE(th) = 25 μa, = V GE V ES = S = 25 C 65 μa V GE = V = 125 C 5 ma I GES = V, V GE = ± V ±1 na (sat) = 5 A, V GE = 15 V = 25 C 2.1 V Note 1 = 125 C 1.8 V Features Very high frequency IGBT and anti-parallel FRED in one package Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low I RM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives Advantages Space savings (two devices in one package) Easy to mount with 1 screw 6 IXYS All rights reserved DS9944B(11/5)
2 Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) Min. Typ. Max. g fs = 5 A; = 1 V, Note 1 58 S IXGK NC2D1 IXGX NC2D1 TO-264 AA Outline C ies 39 pf C oes = 25 V, V GE = V, f = 1 MHz 2 pf C res 97 pf Q g 146 nc Q ge = 5 A, V GE = 15 V, =.5 S 28 nc Q gc 5 nc t d(on) 18 ns E on.4 mj t ri 25 ns Inductive load, = 25 C t d(off) ns = 5 A, V GE = 15 V t fi 35 ns = V, R G = R off = 2. Ω E off.48.8 mj t d(on) 18 ns t ri 25 ns E on Inductive load, T.9 mj J = 125 C t d(off) I 13 ns C = 5 A, V GE = 15 V t fi ns = V, R G = R off = 2. Ω E off 1.2 mj R thjc.26 K/W R thck.15 K/W Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b c D E e 5.46 BSC.215 BSC J K L L P Q Q R R S T PLUS247 Outline Reverse Diode (FRED) Characteristic Values ( = 25 C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = A, V GE = V, 2.1 V Note 1 = 15 C 1.4 I RM = A, V GE = V, -di F = 1 A/μ = 1 C 8.3 A = 1 V t rr = 1 A; -di = A/ms; = 3 V 35 ns R thjc Note 1: Pulse test, t 3 μs, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions..65 K/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e 5.45 BSC.215 BSC L L Q R IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5B2 6,759,692 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71, B2
3 IXGK NC2D1 IXGX NC2D1 1 9 Fig. 1. Output 25ºC 13V 11V Fig. 2. Exteded Output 25ºC 13V 7 5 9V V 9V 3 7V 1 5V V Fig. 3. Output 125ºC V 11V 9V 7V 5V VCE(sat) - Normalized Fig. 4. Dependence of (sat) on Junction Temperature = 1A = 5A I.6 C = 25A Degrees Centigrade 5. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.5 = 25ºC 1 1 VCE - Volts = 1A 5A 25A ºC - ºC V GE - Volts V GE - Volts 6 IXYS All rights reserved
4 IXGK NC2D1 IXGX NC2D1 Fig. 7. Transconductance Fig. 8. Inductive Switching Energy Loss vs. Gate Resistance 7 = - ºC g f s- Siemen ºC 125ºC Eoff - MilliJoule E off E on , = V = 1A = 5A E on - MilliJoules Amperes.5.5 = 25A R G - Ohms Fig. 9. Inductive Swiching Energy Loss vs. Collector Current Fig. 1. Inductive Swiching Energy Loss vs. Junction Temperature 3. E off E on = V E off E on = V = 1A Eoff - MilliJoule E on - MilliJoules Eoff - MilliJoule = 5A 2. E on - MilliJoules.5 = 25ºC = 25A Amperes Degrees Centigrade Fig. 11. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 12. Inductive Turn-off Switching Times vs. Collector Current t f - Nanosecon t f t d(off) , = V = 25A, 5A, 1A t d(off) - Nanoseconds t f - Nanosecon t f t d(off) = V = 25ºC t d(off) - Nanoseconds IXYS reserves the right to change R G - Ohms limits, test conditions, and dimensions Amperes
5 IXGK NC2D1 IXGX NC2D1 Fig. 13. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 14. Inductive Turn-on Switching Times vs. Gate Resistance t f - Nanosecon t f t d(off) = V = 1A, 5A, 25A t d(off) - Nanoseconds t r - Nanosecon t r t d(on) , = V = 1A = 5A t d(on) - Nanoseconds = 25A Degrees Centigrade R G - Ohms Fig. 15. Inductive Turn-on Switching Times vs. Collector Current Fig. 16. Inductive Turn-on Switching Times vs. Junction Temperature t r - Nanosecon 7 5 t r t d(on) = V = 25ºC, 125ºC t d(on) - t r - Nanosecon t r t d(on) = V = 5A = 1A t d(on) = 25A Amperes Degrees Centigrade 16 Fig. 17. Gate Charge 1, Fig. 18. Capacitance VGE- Volts = 3V = 5A I G = 1 ma Capacitance - PicoFar 1, 1 C ies C oes C res Q G - NanoCoulombs f = 1 MHz IXYS All rights reserved
6 IXGK NC2D1 IXGX NC2D1 Fig. 19. Reverse-Bias Safe Operating Area Fig.. Maximum Transient Thermal Resistance IC R(th)JC- ºC / W R G = 1Ω dv / dt < 1V / ns Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
7 1 A 1 nc Diode's Curves = 1 C = 3V A IXGK NC2D1 IXGX NC2D1 = 1 C = 3V 1 1 = 25 C =1 C =15 C Q r 3 =1A = A = 3A I RM =1A = A = 3A V 1 A/μs 1 A/μs 1 V F -di F -di F Fig. 21. Forward current versus V F Fig. 22. Reverse recovery charge Q r versus -di F Fig. 23. Peak reverse current I RM versus -di F K f t rr 1 ns =1A = A = 3A = 1 C = 3V V FR V 15 1 t fr V FR 1.6 μs t fr.5 I RM Q r. 1 C A/μs 1 -di F 5.4 = 1 C = A. A/μs 1 di F Fig. 24. Dynamic parameters Q r, I RM Fig. 25. Recovery time t rr versus -di F Fig. 26. Peak forward voltage V FR and versus t fr versus di F 1 K/W.1 Z thjc.1 Constants for Z thjc calculation: i R thi (K/W) t i (s) Note: Fig. 15 through Fig. show typical values.1 DSEP -6A s 1 t Fig. 27. Transient thermal resistance junction to case 6 IXYS All rights reserved
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Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
NTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
Aluminum Capacitors C, Tubular, Radial Lead
Aluminum Capacitors + 105 C, Tubular, Radial Lead FEATURES Wide temperature range Radial design in two and three lead configuration Ideal SMPS output filter PERFORMANCE CHARACTERISTICS Operating Temperature:
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
Bulletin 1489 UL489 Circuit Breakers
Bulletin 489 UL489 Circuit Breakers Tech Data 489-A Standard AC Circuit Breaker 489-D DC Circuit Breaker 489-A, AC Circuit Breakers 489-D, DC Circuit Breakers Bulletin 489-A Industrial Circuit Breaker
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC input
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
Digital motor protection relays
Digital motor protection relays Specification DMP -S & DMP -Sa DMP -T & DMP -Ta Model No. DMP06-S/Sa DMP60-S/Sa DMP06-T/Ta DMP60-T/Ta Wiring Screw type Tunnel type Panel mount Unit or Extension Note1)
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
IGBT Modules I C T C =80 C. P D max. R θjc max. E off T J =125 C. V CE(sat) typ. V CES min. Package Style. Inside Circuit. Part Number (V) (A) (mj)
Inversion Welder & Plasma Cutter Renewable Energy Inverter High Short Capability Motor Drive and Inverter EV & LEV Charger T C =25 o C unless otherwise noted GJ 38X28.1X12.8mm GS 94X34X30.5mm U UZ FZ MMG100J060U
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Thyristor & Diode Modules
Thyristor & We offer a broad range of PowerBLOCK modules containing thyristor and diode pellets in a voltage range of 1200V to 4400V and a current range of 61A up to 1070A. The modules are designed and
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
Low voltage AC drives. ABB micro drives Οδηγός Διαστασιολόγησης Μετατροπέων Συχνότητας
Low voltage AC drives ABB micro drives Οδηγός Διαστασιολόγησης Μετατροπέων Συχνότητας Χρειάζεστε βοήθεια στη διαστασιολόγηση μετατροπέων συχνότητας; Η επιλογή του σωστού μετατροπέα συχνότητας έχει πολλά
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
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"# " # $ "%%" & '" (' )' * & + (' )' * &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 # - (#* 2 # - (#* 2 3( 4* 2 (* 2 5 3 ( * 2 6 3 (7 4* 2 #8 (# * 9 : (* 9 #" " 5,1 < = " = #+ +# 9 ' :> # &? + # & ISD i " @
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 20-Second Durations
VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
FT-63 SINGLE TURN CERMET TRIMMERS. F T E T V 5 k Ω ( ) FEATURES PART NUMBER DESIGNATION
SINGLE TURN FT-6 RoHS compliant INTERNAL STRUCTURE 4 5 8 6 FEATURES 4 5 6 8 Part name Housing Rotor Wiper O ring Resistive element Terminal pin Adhesive Base element Electrode Material PBT Polybutyleneterephthalate