Βιογραφικό σημείωμα. Εμμανουήλ Δημάκης

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1 Βιογραφικό σημείωμα Εμμανουήλ Δημάκης Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400, Δρέσδη, Γερμανία ΒΙΟΓΡΑΦΙΚΑ ΣΤΟΙΧΕΙΑ Ημερομηνία γέννησης: Υπηκοότητα: Ελληνική ΣΠΟΥΔΕΣ 2007 Διδακτορικό δίπλωμα Φυσικής (Μικροηλεκτρονική και Οπτοηλεκτρονική) Πανεπιστήμιο Κρήτης, Ηράκλειο, Επιβλέπων Καθ. Αλέξανδρος Γεωργακίλας 2003 Μεταπτυχιακό δίπλωμα Φυσικής (Μικροηλεκτρονική και Οπτοηλεκτρονική) Πανεπιστήμιο Κρήτης, Ηράκλειο 2000 Πτυχίο Φυσικής (με ειδίκευση στη Μικροηλεκτρονική) Πανεπιστήμιο Κρήτης, Ηράκλειο ΕΡΕΥΝΗΤΙΚΗ ΕΜΠΕΙΡΙΑ σήμερα Αρχηγός ερευνητικής ομάδας, Institute of Ion Beam Physics and Materials Research, Helmholtz- Zentrum Dresden-Rossendorf, Δρέσδη, Γερμανία Μεταδιδακτορικός ερευνητής, Paul-Drude-Institut für Festkörperelektronik, Βερολίνο, Γερμανία Μεταδιδακτορικός ερευνητής, Center for Photonics Research, Electrical and Computer Engineering Department, Boston University, Βοστώνη, ΗΠΑ Επικουρικό ερευνητικό έργο, Ερευνητική Ομάδα Μικροηλεκτρονικής, ΙΗΔΛ, ΙΤΕ, Ηράκλειο, Ινστιτούτο Ηλεκτρονικής Δομής και Λέιζερ (ΙΗΔΛ), Ίδρυμα Τεχνολογίας και Έρευνας (ΙΤΕ), Ηράκλειο Προπτυχιακό επικουρικό ερευνητικό έργο, Ερευνητική Ομάδα Μικροηλεκτρονικής, ΙΗΔΛ, ΙΤΕ, Ηράκλειο

2 ΚΥΡΙΑ ΕΡΕΥΝΗΤΙΚΑ ΕΝΔΙΑΦΕΡΟΝΤΑ Επιταξιακή ανάπτυξη λεπτών υμενίων και νανοδομών ημιαγωγών ΙΙΙ-V Φυσική και εφαρμογές λεπτών υμενίων και νανοδομών ΙΙΙ-νιτριδίων και ΙΙΙ-αρσενιδίων Μονολιθική ολοκλήρωση από κάτω προς τα πάνω νανοκολώνων ΙΙΙ-αρσενιδίων σε πλατφόρμες CMOS πυριτίου Νανοκολώνες με εφαρμογή σε καινοτόμες (οπτο)ηλεκτρονικές και θερμοηλεκτρικές διατάξεις Υπέρλεπτα κβαντικά πηγάδια InN ως τοπολογικοί μονωτές ΠΕΙΡΑΜΑΤΙΚΕΣ ΔΕΞΙΟΤΗΤΕΣ Επίταξη με μοριακές δέσμες (MBE), ανακλαστική περίθλαση ηλεκτρονίων υψηλής ενέργειας (RHEED), περίθλαση ακτίνων-χ (XRD), μικροσκοπία ατομικής δύναμης (AFM), ηλεκτρονική μικροσκοπία σάρωσης (SEM), φωτολιθογραφία, τεχνικές ηλεκτρικού χαρακτηρισμού (φαινόμενο Hall, I-V, C-V), οπτική φασματοσκοπία (φωτοφωταύγεια, ηλεκτροφωταύγεια, καθοδοφωταύγεια, σκέδαση Raman, ελλειψομετρία) ΔΙΔΑΚΤΙΚΗ ΕΜΠΕΙΡΙΑ 2015, 2016 Τμήμα Φυσικής, Technische Universität Dresden Μάθημα: Ημιαγωγικές Κβαντικές Δομές Επικουρικό διδακτικό έργο, Τμήμα Φυσικής, Πανεπιστήμιο Κρήτης Μαθήματα: Εργαστήριο Φυσικής Ημιαγωγών, Ημιαγωγικές Ηλεκτρονικές Διατάξεις, Αναλογικά Ηλεκτρονικά, Ψηφιακά Ηλεκτρονικά, Εισαγωγή στην Μικροηλεκτρονική ΔΗΜΟΣΙΕΥΣΕΙΣ Δημοσιεύσεις σε επιστημονικά περιοδικά με κριτές (βλ. αναλυτικό υπόμνημα δημοσιεύσεων) Αριθμός δημοσιεύσεων: 56 Αριθμός αναφορών (citations) ~ 800 Δείκτης h (h-index): 17 Πατέντες Π1. Α. Γεωργακίλας, Ν. Πελεκάνος, Ε. Δημάκης, Ανάπτυξη με την μέθοδο επίταξης με μοριακές δέσμες με πηγή πλάσματος αζώτου ετεροδομών ημιαγωγών νιτριδίων που περιλαμβάνουν στρώματα κραμάτων νιτριδίου του Ινδίου-Αργιλίου-Γαλλίου, Αριθμός διεθνούς ταξινόμησης: H01L 21/00, C30B 23/02

3 Διατριβές και διπλωματικές εργασίες T3. Φυσικοί μηχανισμοί επίταξης με μοριακές δέσμες και ιδιότητες λεπτών υμενίων InN (0001), Διδακτορική διατριβή, Τμήμα Φυσικής, Πανεπιστήμιο Κρήτης, 2007 T2. Επιταξιακή ανάπτυξη ετεροδομών από τετραμερή κράματα ΙΙΙ-νιτριδίων για βελτιωμένες διόδους λέιζερ, Μεταπτυχιακή διατριβή, Τμήμα Φυσικής, Πανεπιστήμιο Κρήτης, 2003 T1. Ανάπτυξη τρανζίστορ AlGaN/GaN υψηλής ευκινησίας (HEMT) με επίταξη με μοριακές δέσμες, Διπλωματική εργασία, Τμήμα Φυσικής, Πανεπιστήμιο Κρήτης, 2000 ΠΡΟΣΚΕΚΛΗΜΕΝΕΣ ΟΜΙΛΙΕΣ ΣΕ ΔΙΕΘΝΗ ΣΥΝΕΔΡΙΑ/ΣΕΜΙΝΑΡΙΑ I8. What Ga droplets can and cannot do in the growth of GaAs nanowires on Si, 19 th European Workshop on Molecular Beam Epitaxy, Korobitsyno, Russia, March 2017 I7. The role of Ga droplets in the epitaxy of GaAs nanowires on Si substrates, FemtoTera workshop, Budapest, Hungary, September 2016 I6. Growth and applications of III-V nanowires on Si substrates, Seminar talk, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Germany, September 2016 I5. The role of Ga droplets in the epitaxy of GaAs nanowires on Si substrates, Seminar talk, Foundation for Research and Technology Hellas, Heraklion, Greece, August 2016 I4. Light emitting diode based on (In,Ga)As/GaAs coaxial multi-shell nanowires monolithically integrated on Silicon, Nanowires Workshop, Rehovot, Israel, November 2013 I3. III-As nanowires on Si: From growth mechanisms and doping to light emitting diodes, European Workshop on Heterostructure Technology - HETECH, Barcelona, Spain, November 2012 I2. Towards III-As nanowire devices on Si: growth and doping mechanisms, SemicoNano, Traunkirchen, Austria, September 2011 I1. Molecular beam epitaxy of III-As nanowires on Si, Seminar talk, Dept. of Mechanical and Manufacturing Engineering, University of Cyprus, Cyprus, April 2011 ΟΜΙΛΙΕΣ ΣΕ ΔΙΕΘΝΗ ΣΥΝΕΔΡΙΑ O18. Droplet-confined alternate pulsed epitaxy of GaAs nanowires on Si substrates: meeting the typical MBE standards, 19 th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 2016 O17. New possibilities in the self-catalyzed growth of GaAs nanowires using a modification of migrationenhanced epitaxy, Nanowire Growth Workshop, Barcelona, Spain, October 2015 O16. How polytypism in InAs nanowires is affected by the presence of liquid indium during the growth on silicon, Nanowire Growth Workshop, Eindhoven, Netherlands, August 2014 O15. Light emitting diode made of (In,Ga)As/GaAs multi-shell nanowires on Silicon, Deutscher MBE, Dresden, Germany, September 2013

4 O14. Light emitting diodes based on vertical GaAs/(In,Ga)As core-shell nanowires on Si, MRS Fall Meeting, Boston, USA, November 2012 O13. Shell-doping of GaAs nanowires with Si for n-type conductivity, Nanowires Workshop, Berlin, Germany, September 2012 O12. Vapor-solid growth mode of InAs nanowires on Si(111), Topical workshop on nanowire growth by MBE, Berlin, Germany, September 2011 O11. Distinct nucleation and growth modes of self-assisted InAs nanowires on bare Si(111), 16 th European MBE Workshop, Alpe d'huez, France, March 2011 Ο10. Investigation of the emission properties of InN/GaN quantum wells using temperature-dependent photoluminescence, 5 th International Workshop on Nitride Semiconductors - IWN, Montreux, Switzerland, October 2008 O9. Growth and properties of near-uv light emitting diodes based on InN/GaN quantum wells, 7 th International Conference on Nitride Semiconductors - ICNS, Las Vegas, USA, September 2007 O8. InN-based ultraviolet light emitting diodes grown by plasma-assisted molecular beam epitaxy, 24 th North American MBE Conference, Albuquerque, USA, September 2007 Ο7. Physical processes during growth of InN on GaN (0001) by plasma-assisted molecular beam epitaxy, Electronic Materials Conference, TMS, Pennsylvania State University, USA, June 2006 O6. Effect of the growth mode and substrate properties on the biaxial strain in InN (0001) epilayers, Electronic Materials Conference, TMS, Pennsylvania State University, USA, June 2006 O5. Properties of MBE-grown InN (0001) films, E-MRS Fall Meeting, Warsaw, Poland, September 2005 O4. Biaxial strain in InN films grown heteroepitaxially on GaN (0001) by plasma assisted molecular beam epitaxy, E-MRS Fall Meeting, Warsaw, Poland, September 2005 O3. Molecular beam epitaxy of InN films and micro-columns on Ga-face GaN (0001), European Workshop on Heterostructure Technology - HETECH, Koutouloufari, Greece, October 2004 O2. The role of nucleation temperature in InN on GaN growth by plasma-assisted MBE, E-MRS Spring Meeting, Strasbourg, France, May 2004 O1. High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy, 12 th Semiconducting and Insulating Materials Conference, Smolenice, Slovakia, June ΑΚΟΛΟΥΘΕΙ Η ΑΓΓΛΙΚΗ ΕΚΔΟΣΗ ΤΟΥ ΒΙΟΓΡΑΦΙΚΟΥ ΣΗΜΕΙΩΜΑΤΟΣ

5 Curriculum vitae Emmanouil Dimakis Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400, Dresden, Germany PERSONAL DATA Birth date: Citizenship: Hellenic EDUCATION 2007 Ph.D. in Physics (Microelectronics and Optoelectronics) University of Crete, Heraklion, Greece, Advisor: Prof. Alexandros Georgakilas 2003 M.S. in Physics (Microelectronics and Optoelectronics) University of Crete, Heraklion, Greece 2000 B.S. in Physics (specialty in Microelectronics) University of Crete, Heraklion, Greece RESEARCH EXPERIENCE present Group leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden- Rossendorf, Dresden, Germany Research Associate, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany Research Associate, Center for Photonics Research, Electrical and Computer Engineering Department, Boston University, USA Research Assistant, Microelectronics Research Group, Institute of Electronic Structure and Lasers (IESL), Foundation for Research and Technology Hellas (FORTH), Heraklion, Greece Undergraduate Research Assistant, Microelectronics Research Group, IESL, FORTH, Heraklion, Greece

6 MAIN SCIENTIFIC INTERESTS Molecular beam epitaxy of III-V semiconductor films and nanostructures Physics and applications of III-nitride and III-arsenide films and nanostructures Bottom-up monolithic integration of III-arsenide nanowires on Si CMOS platforms Nanowires for novel (opto)electronic and thermoelectric device architectures Ultra-thin InN quantum wells as topological insulators EXPERIMENTAL SKILLS Molecular Beam Epitaxy (MBE), Reflection High-Energy Electron Diffraction (RHEED), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Photolithography, Electrical characterization (Hall effect, I-V, C-V), Optical spectroscopy (Photoluminescence, Electroluminescence, Raman, Ellipsometry) TEACHING EXPERIENCE 2015, 2016 Physics Department, Technische Universität Dresden Course: Semiconductor Quantum Structures Teaching Assistant, Physics Department, University of Crete Courses: Physics of Semiconductors Laboratory, Electronic Semiconductor Devices, Analogue electronics, Digital electronics, Introduction to Microelectronics PUBLICATIONS Peer-reviewed journal publications (see detailed memorandum of publications) Number of publications: 56 Times cited ~ 800 h-index: 17 Patents Π1. A. Georgakilas, N. T. Pelekanos, E. Dimakis, Growth of nitride semiconductor heterostructures including layers of InAlGaN quaternary alloys by molecular beam epitaxy, International classification No.: H01L 21/00, C30B 23/02

7 Theses T3. Physical mechanisms in molecular beam epitaxy and properties of InN(0001) films, Ph.D. thesis, Physics Department, University of Crete, 2007 T2. Epitaxial growth of InAlGaN heterostructures for optimized laser diodes, M.S. thesis, Physics Department, University of Crete, 2003 T1. Growth of AlGaN/GaN HEMTs by RF-plasma-assisted molecular beam epitaxy, Diploma thesis, Physics Department, University of Crete, 2000 INVITED TALKS AT INTERNATIONAL CONFERENCES/WORKSHOPS/SEMINARS I8. What Ga droplets can and cannot do in the growth of GaAs nanowires on Si, 19 th European Workshop on Molecular Beam Epitaxy, Korobitsyno, Russia, March 2017 I7. The role of Ga droplets in the epitaxy of GaAs nanowires on Si substrates, FemtoTera workshop, Budapest, Hungary, September 2016 I6. Growth and applications of III-V nanowires on Si substrates, Seminar talk, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Germany, September 2016 I5. The role of Ga droplets in the epitaxy of GaAs nanowires on Si substrates, Seminar talk, Foundation for Research and Technology Hellas, Heraklion, Greece, August 2016 I4. Light emitting diode based on (In,Ga)As/GaAs coaxial multi-shell nanowires monolithically integrated on Silicon, Nanowires Workshop, Rehovot, Israel, November 2013 I3. III-As nanowires on Si: From growth mechanisms and doping to light emitting diodes, European Workshop on Heterostructure Technology - HETECH, Barcelona, Spain, November 2012 I2. Towards III-As nanowire devices on Si: growth and doping mechanisms, SemicoNano, Traunkirchen, Austria, September 2011 I1. Molecular beam epitaxy of III-As nanowires on Si, Seminar talk, Dept. of Mechanical and Manufacturing Engineering, University of Cyprus, Cyprus, April 2011 REGULAR TALKS AT INTERNATIONAL CONFERENCES/WORKSHOPS O18. Droplet-confined alternate pulsed epitaxy of GaAs nanowires on Si substrates: meeting the typical MBE standards, 19 th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 2016 O17. New possibilities in the self-catalyzed growth of GaAs nanowires using a modification of migrationenhanced epitaxy, Nanowire Growth Workshop, Barcelona, Spain, October 2015 O16. How polytypism in InAs nanowires is affected by the presence of liquid indium during the growth on silicon, Nanowire Growth Workshop, Eindhoven, Netherlands, August 2014 O15. Light emitting diode made of (In,Ga)As/GaAs multi-shell nanowires on Silicon, Deutscher MBE, Dresden, Germany, September 2013

8 O14. Light emitting diodes based on vertical GaAs/(In,Ga)As core-shell nanowires on Si, MRS Fall Meeting, Boston, USA, November 2012 O13. Shell-doping of GaAs nanowires with Si for n-type conductivity, Nanowires Workshop, Berlin, Germany, September 2012 O12. Vapor-solid growth mode of InAs nanowires on Si(111), Topical workshop on nanowire growth by MBE, Berlin, Germany, September 2011 O11. Distinct nucleation and growth modes of self-assisted InAs nanowires on bare Si(111), 16 th European MBE Workshop, Alpe d'huez, France, March 2011 Ο10. Investigation of the emission properties of InN/GaN quantum wells using temperature-dependent photoluminescence, 5 th International Workshop on Nitride Semiconductors - IWN, Montreux, Switzerland, October 2008 O9. Growth and properties of near-uv light emitting diodes based on InN/GaN quantum wells, 7 th International Conference on Nitride Semiconductors - ICNS, Las Vegas, USA, September 2007 O8. InN-based ultraviolet light emitting diodes grown by plasma-assisted molecular beam epitaxy, 24 th North American MBE Conference, Albuquerque, USA, September 2007 Ο7. Physical processes during growth of InN on GaN (0001) by plasma-assisted molecular beam epitaxy, Electronic Materials Conference, TMS, Pennsylvania State University, USA, June 2006 O6. Effect of the growth mode and substrate properties on the biaxial strain in InN (0001) epilayers, Electronic Materials Conference, TMS, Pennsylvania State University, USA, June 2006 O5. Properties of MBE-grown InN (0001) films, E-MRS Fall Meeting, Warsaw, Poland, September 2005 O4. Biaxial strain in InN films grown heteroepitaxially on GaN (0001) by plasma assisted molecular beam epitaxy, E-MRS Fall Meeting, Warsaw, Poland, September 2005 O3. Molecular beam epitaxy of InN films and micro-columns on Ga-face GaN (0001), European Workshop on Heterostructure Technology - HETECH, Koutouloufari, Greece, October 2004 O2. The role of nucleation temperature in InN on GaN growth by plasma-assisted MBE, E-MRS Spring Meeting, Strasbourg, France, May 2004 O1. High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy, 12 th Semiconducting and Insulating Materials Conference, Smolenice, Slovakia, June 2002