SILICON PHOTODETECTORS, OPTICAL SENSORS
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- Ευτρόπιος Κοντόσταυλος
- 8 χρόνια πριν
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1 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS
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3 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SI-FOTODETEKTOREN SILICON PHOTODETECTORS 1. Fototransistoren 1. Phototransistors SMT Fototransistoren 1.1. SMT Transistors SMT Transistoren in flachem, engwinkligem MIDLED Gehäuse SMT Transistors in low profile, narrow angle MIDLED package Empfänger/Sender im Multi TOPLED Gehäuse Detector/Emitter in Multi TOPLED package SMT Transistor mit λ -Kurve SMT Transistor with λ -Curve Fototransistoren im Plastikgehäuse 1.2. Phototransistors in plastic package Klares Plastikgehäuse Clear plastic package Plastikgehäuse mit Tageslichtfilter für 880/950 IRED Plastic package with daylight filter for 880/950 IRED Doppel Fototransistor Dual Phototransistor Zeilen im Plastikgehäuse Arrays in plastic package Fototransistoren im Metallgehäuse 1.3. Phototransistors in metal package Fotodioden 2. Photodiodes SMT Fotodioden 2.1. SMT photodiodes SMT PIN Fotodioden in klarem Gehäuse SMT PIN photodiodes in clear package SMT PIN Fotodioden mit λ -Kurve SMT PIN photodiodes with λ -Curve SMT PIN Fotodioden mit Tageslichtfilter SMT PIN photodiodes with daylight filter SMT Doppelfotodiode SMT dual photodiodes PIN Fotodioden im Plastikgehäuse 2.2. PIN photodiodes in plastic package Klares Plastikgehäuse Clear plastic package Gehäuse mit Tageslichtfilter 880 IRED Package with daylight filter for 880 IRED Gehäuse mit Tageslichtfilter 950 IRED Package with daylight filter for 950 IRED PIN Fotodiode im Metallgehäuse 2.3. PIN Photodiodes in metal package Foto ICs 3. Photo ICs Schmitt Trigger IC 3.1. Schmitt Trigger IC Linearer erstärker mit Spannungsausgang 3.2. Linear amplifier with voltage output Foto IC für Fernsteuerung 3.3. Photo IC for Remote Control Fotodetektoren für spezielle Anwendungen 4. Photodetectors for special applications Blauempfindliche Fotodiode 4.1. Blue sensitive photodiode Fotodetektoren für den sichtbaren Bereich 4.2. Photodetectors for the visible range Grossflächige PIN Fotodiode 4.3. Large area PIN photodiode Doppelfotodioden 4.4. Dual photodiodes 31 OPTISCHE SENSOREN OPTICAL SENSORS 1. Gabellichtschranken 1. Slotted interrupters SMT Reflexlichtschranken 2. SMT Reflective Sensors 34 IR-LUMINESZENZDIODEN INFRARED EMITTERS 1. Emitter in SMT 1. Emitter in SMT Flaches, engwinkliges MIDLED Gehäuse 1.1. Low profile, narrow angle MIDLED package SmartLED 1.2. SmartLED TOPLED / SIDELED Familie 1.3. TOPLED / SIDELED family SMR 1.4. SMR Hochleistungsemitter High power emitter Sehr schnelle Emitter High speed emitter Emitter im Plastikgehäuse 4. Emitter in plastic package Radiale Gehäuse 4.1. Radial packages Sidelooker 4.2. Sidelooker Zeilen im Plastikgehäuse 4.3. Arrays in plastic package Emitter im Metallgehäuse 5. Emitter in metal package 49 11
4 SI-FOTODETEKTOREN SILICON PHOTODETECTORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 1. Fototransistoren 1.1.SMT Transistoren 1. Phototransistors 1.1. SMT Transistors TOPLED SFH 320 SFH 320 FA SmartLED SFH 3010 TOPLED with Lens SFH 3219 TOPLED RG SFH 3211 SFH 3211 FA SIDELED SFH 325 SFH 325 FA Multi TOPLED SFH 331 / SFH 7221 / SFH 7225 / SFH 7226 MIDLED SFH 3600 / SFH 3605 Micro SIDELED SFH 3204 SMR SFH 3500 SFH 3505 SMR SFH 3500 FA SFH 3505 FA SMART DIL SFH 3400 / SFH 3401 SFH
5 SI-FOTODETEKTOREN SILICON PHOTODETECTORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 1.2.Fototransistoren im Plastikgehäuse 1.2. Phototransistors in plastic package SFH 309 / SFH 310 SFH 309 FA / SFH 310 FA SFH 309 P SFH 309 PFA SFH 300 / SFH 313 / SFH 314 SFH 300 FA / SFH 313 FA / SFH 314 FA SFH 303 SFH 303 FA LPT 80 A SFH 3100 F SFH 3160 F SFH 3162 F SFH 3163 F SFH 305 BPX 81 BPX Fototransistoren im Metallgehäuse 1.3. Phototransistors in metal package BPY 62 / BPX 43 BPX 38 BP
6 SI-FOTODETEKTOREN SILICON PHOTODETECTORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 2. Fotodioden 2.1.SMT-Fotodioden 2. Photodiodes 2.1. SMT Photodiodes BP 104 S / BPW 34 S / BPW 34 BS BPW 34 S R18R BP 104 FS / BP 104 FAS / BPW 34 FS / BPW 34 FAS BPW 34 FS R18R / BPW 34 FAS R18R SMART DIL SFH 2400 SFH 2400 FA SMR SFH 2500 SFH 2500 FA SMR SFH 2505 SFH 2505 FA KOM 2125 KOM 2125 FA 14
7 SI-FOTODETEKTOREN SILICON PHOTODETECTORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 2.2.PIN Fotodioden im Plastikgehäuse 2.2.PIN Photodiodes in plastic package BPW 34 BPW 34 F / BPW 34 FA / BP 104 F SFH 206 K SFH 229 SFH 229 FA SFH 203 / SFH 213 / SFH 214 SFH 203 FA / SFH 213 FA / SFH 214 FA SFH 203 P SFH 203 PFA SFH 225 FA / SFH 235 FA SFH 205 F / SFH 205 FA SFH 204 F / SFH 204 FA 2.3.PIN Fotodiode im Metallgehäuse 2.3.PIN Photodiode in metal package BPX 65 15
8 SI-FOTODETEKTOREN SILICON PHOTODETECTORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 3. Foto ICs 3.1.Schmitt Trigger 3. Photo ICs 3.1. Schmitt Trigger SMART DIL SFH 5440 SFH 5441 SFH 5140 F SFH 5141 F SFH 5840 SFH 5841 SFH Linear erstärker mit Spannungsausgang 3.2. Linear amplifier with voltage output SFH 5130 SFH Foto IC für Fernsteuerung 3.3. Photo IC for remote control SFH 5110 SFH
9 OPTISCHE SENSOREN OPTICAL SENSORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 4. Fotodetektoren für spezielle Anwendungen 4. Photodetectors for special applications BPW 34 B BPW 21 / BPX 61 Ambient Light Sensor SFH 3410 Ambient Light Sensor SFH 2430 BPW 34 BS SFH 221 BPX 48 BPX 48 F 17
10 SI-FOTODETEKTOREN SILICON PHOTODETECTORS 1. Fototransistoren 1. Phototransistors T A = 25 C T A = 25 C Package Type ϕ sensitive area mm 2 I PCE (E e = 0.1 mw/cm 2, λ = 950, CE = 5 ) µa CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs 1.1 SMT Transistoren 1.1 SMT Transistors SFH 3010 ± >25 2) 30 (0.5 mw/cm 7 Q65110A SmartLED SFH Q65110A2471 TOPLED TOPLED SFH Q65110A2469 SFH 320-3/ /8 Q65110A1781 SFH Q65110A2510 ± 60 SFH 320 FA 16 Q65110A2472 SFH 320 FA Q65110A SFH 320 FA-3/ /8 Q65110A2475 SFH 320 FA Q65110A SFH 3219 ± Q65110A TOPLED with Lens SFH Q65110A TOPLED RG SFH / Q65110A SFH 3211 FA 16 Q65110A TOPLED RG SFH 3211 FA-3/ /8 Q65110A2528 ± 60 SFH Q65110A2486 SIDELED SIDELED SFH Q65110A SFH 325-3/ /8 Q65110A2491 SFH Q65110A2484 SFH 325 FA 16 Q65110A2487 SFH 325 FA Q65110A SFH 325 FA-3/ /8 Q65110A2490 SFH 325 FA Q65110A SFH 3204 ± > Q65110A Micro SIDELED 18 For information about RoHS compliance of our products, please visit
11 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I PCE (λ = 950, CE = 5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs 1.1 SMT Transistoren (Forts.) 1.1 SMT Transistors (cont d) SFH Q65110A T1 3/4 SMR SFH Q65110A2639 T1 3/4 SMR T1 3/4 SMR T1 3/4 SMR SmartDIL SFH / /17 Q65110A2646 SFH / /24 Q65110A2647 ± SFH 3500 FA Ee = 0.5 mw/cm Q65110A2637 SFH 3500 FA-5/ /24 Q65110A2645 SFH 3505 FA Q65110A2640 SFH 3505 FA-5/ /24 Q65110A2780 SFH Ee = 0.1 mw/cm 2 Q65110A2629 SFH / /34 Q65110A2634 SFH 3401 (mit Basisanschluß/ with base connection) Q65110A2635 SFH /3 ± /34 Q65110A2644 SFH Q65110A1207 SFH / /34 Q65110A SMT Transistoren in flachem, engwinkligem MIDLED Gehäuse SMT Transistors in low profile, narrow angle MIDLED package SFH 3600 >63 Q65110A1573 MIDLED SFH / Q65110A2665 SFH / Q65110A2666 (I ± C = 0.1 ma, CC = 5, SFH 3605 >63 R L = 10 kω) Q65110A2663 Ee = 0.1 mw/cm 2 SFH / Q65110A MIDLED SFH / Q65110A1574 For information about RoHS compliance of our products, please visit 19
12 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Empfänger/Sender im Multi TOPLED Gehäuse Detector/Emitter in Multi TOPLED package Package Type λ peak ϕ I mcd F (I F = 20 ma) Emitter 635 ± Multi TOPLED SFH 331-JK Detector sensitive area mm 2 I PCE (E e = 0.1 mw/cm 2, λ = 950, CE = 5 ) µa CEO λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs Q65110A Package Type λ peak ϕ I e (I F = 100 ma) mw/sr F (I F = 100 ma) Emitter 880 ± Multi TOPLED SFH 7221 Detector sensitive area mm 2 I PCE (E e = 0.1 mw/cm 2, λ = 950, CE = 5 ) µa CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs Q65110A Package Type λ peak ϕ I (I F = 20 ma) mcd F (I F = 20 ma) Emitter 591 ± Multi TOPLED SFH 7225 Detector sensitive area mm 2 I PCE (E v = 1000 lx Standard light A CE = 5 ) µa CE typ. 35 > 0.5 Crosstalk I PCE (I F = 20 ma, CE = 5 ) µa Q65110A Package Type λ peak ϕ I (I F = 20 ma) mcd F (I F = 20 ma) Emitter 645 ± Multi TOPLED SFH 7226 Detector sensitive area mm 2 I PCE (E v = 1000 lx Standard light A CE = 5 ) µa CE typ. 35 > 2 Crosstalk I PCE (I F = 20 ma, CE = 5 ) µa Q65110A Package Type ϕ sensitive area mm 2 I PCE (λ = 950, CE = 5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs SMT Transistor mit λ - Kurve SMT Transistor with λ - Curve SmartDIL SFH 3410 > E = 20 lx, standard light A Q65110A1211 SFH / Q65110A2653 ± SFH / Q65110A2654 SFH / Q65110A For information about RoHS compliance of our products, please visit
13 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I PCE (E e =0,5 mw/cm 2, λ = 950, CE = 5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs 1.2 Fototransistoren im Plastikgehäuse 1.2 Phototransistors in plastic package Klares Plastikgehäuse Clear plastic package SFH Q62702P0859 SFH 309-3/ /7 Q62702P3592 SFH Q62702P0998 ± SFH 309-4/ /8 Q62702P T 1 SFH Q62702P0999 SFH 309-5/ /9 Q62702P3594 SFH Q62702P0874 ± SFH 310-2/ /8 Q62702P SFH 309 P ± Q62702P T 1 T 1¾ SFH Q62702P1667 ± 10 SFH 313-2/ /12 Q62702P SFH Q62702P1668 ± 40 SFH 314-2/ /12 Q62702P3600 SFH Q62702P1189 ± SFH 300-3/ Q62702P SFH Q62702P0957 ± T 1¾ SFH 303-3/ /15 Q62702P3588 LPT 80 A ± Q68000A7852 1) 30 1) conversion to RoHS compliance 03/ Plastikgehäuse mit Tageslichtfilter für 880/950 IRED Plastic package with daylight-filter for 880/950 IRED T 1 SFH 309 FA 0.4 Q62702P0941 SFH 309 FA-3/ /7 Q62702P3590 SFH 309 FA Q62702P0178 ± SFH 309 FA-4/ /8 Q62702P SFH 309 FA Q62702P0180 SFH 309 FA-5/ /9 Q62702P5199 SFH 310 FA 0.4 Q62702P1673 ± SFH 310 FA-2/ /8 Q62702P For information about RoHS compliance of our products, please visit 21
14 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I PCE (E e =0,5 mw/cm 2, λ = 950, CE = 5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs Plastikgehäuse mit Tageslichtfilter für 880/950 IRED Plastic Package with daylight-filter for 880/950 IRED SFH 309 PFA ± Q62702P T 1 T 1¾ SFH 313 FA 2.5 Q62702P1674 SFH 313 FA-2/3 ± /12 Q62702P3597 SFH 313 FA-3/ /14 Q62702P5196 SFH 314 FA Q62702P1675 ± 40 SFH 314 FA-2/ /12 Q62702P3599 SFH 300 FA 0.63 Q62702P1193 ± SFH 300 FA-3/ Q62702P SFH 303 FA 1.0 Q62702P0958 ± T 1¾ SFH 303 FA-3/ /15 Q62702P3587 SFH 3100 F ± > /9 Q62702P5073 1) 31 1) conversion to RoHS compliance 03/2005 Package Type ϕ sensitive area mm 2 I CE(ON) (E e =0,34 mw/cm 2, λ = 950, CE = 3,5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs Doppel Fototransistor Dual Phototransistor SFH 3160 F 2x /9 Q62702P SFH 3162 F ± 75 2x /11 Q62702P SFH 3163 F 2x /11 Q65110A For information about RoHS compliance of our products, please visit
15 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I PCE (E e =0,5 mw/cm 2, λ = 950, CE = 5 ) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs Zeilen im Plastikgehäuse Arrays in plastic package SFH Q62702P0836 1) ± SFH 305-2/ /6 Q62702P3589 1) BPX Q62702P0020 1) BPX 81-2/ /6 Q62702P3583 1) BPX Q62702P0043S003 1) BPX 81-3/ /8 Q62702P3584 1) BPX Q62702P0043S004 1) BPX Q62702P0021 1) BPX 83 ± Q62702P0025 1) BPX Q62702P0030 1) BPX Q62702P0031 1) BPX Q62702P0022 1) BPX Q62702P0032 1) Array BPX Q62702P0033 1) BPX Q62702P0026 1) BPX Q62702P0028 1) 1) conversion to RoHS compliance 03/ Package Type ϕ sensitive area mm 2 I PCE (E e = 0.5 mw/cm 2, λ = 950, CE = 5 ) µa CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 1 kω) µs 1.3 Fototransistoren im Metallgehäuse 1.3 Phototransistors in metal package TO-18 TO-18 BPY Q60215Y0062 BPY Q60215Y1112 ± BPY 62-3/ /9 Q62702P5198 BPY Q60215Y1113 BPX Q62702P0016 BPX 43-3/ /14 Q62702P3581 BPX 43-4 ± Q62702P0016S004 BPX 43-4/ /18 Q62702P3582 BPX Q62702P0016S BPX Q62702P0015 BPX 38-2/ /12 Q62702P3578 ± BPX Q62702P0015S003 BPX Q62702P0015S BP Q62702P0075 ± TO-18 BP 103-3/ /9 Q62702P3577 For information about RoHS compliance of our products, please visit 23
16 SI-FOTODETEKTOREN SILICON PHOTODETECTORS 2. Fotodioden 2. Photodiodes Package Type ϕ sensitive area mm 2 I P (E v = 1000 lx, standard light A, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns 2.1 SMT Fotodioden 2.1 SMT Photodiodes SMT PIN Fotodioden in klarem Gehäuse SMT PIN Photodiodes in clear package BP 104 S ( 40) Q65110A SMT DIL BPW 34 S Q65110A ( 50) BPW 34 S R18R ± 60 2 ( 30) Q65110A SMT DIL BPW 34 BS 14.8 (>10.8) (E e = 1 mw/cm 2, λ=400, R = 5 ) 30% (400 ) 25 Q65110A SMT DIL SFH 2400 ± (> 5.5) Q65110A Smart DIL SFH ( 5) ( R = 20 ) Q65110A T 1 3/4 SMR ± (> 50) (λ=870, E e = 1 mw/cm 2 ) SFH 2505 Q65110A T 1 3/4 SMR Package Type ϕ sensitive area mm 2 I P (E v = 1000 lx, standard light A, R = 5 ) µa I R ( R = 5 ) na λ 10% t r,t f ( R = 5, R L = 50 kω) µs SMT PIN Fotodioden mit λ -Kurve SMT PIN Photodiodes with λ -Curve SFH 2430 ± (>4) 0.1( 5) Q65110A SMT DIL 24 For information about RoHS compliance of our products, please visit
17 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I P (E e = 1 mw/cm 2, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns SMT PIN Fotodioden mit Tageslichtfilter SMT PIN Photodiodes with daylight-filter SMT DIL BP 104 FS Q65110A ( 25) BP 104 FAS Q65110A2672 BPW 34 FS Q65110A2700 BPW 34 FAS Q65110A ( 30) 10 BPW 34 FS R18R ( 40) Q65110A2740 ± SMT DIL BPW 34 FAS R18R Q65110A2699 SFH 2400 FA 6.2 ( 3.6) Q65110A Smart DIL SFH 2500 FA 1 1 λ = ( 5) ( R = 20 ) Q65110A T 1 3/4 SMR ± (> 50) SFH 2505 FA Q65110A T 1 3/4 SMR Package Type ϕ sensitive area mm 2 I P (E = 1000 lx, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 10, R L = 50 Ω) ns SMT Doppelfotodiode SMT Dual photodiodes KOM ( 30) diode A 100 ( 75) diode B Q65110A2703 KOM 2125 FA ± 60 4 (diode A) 10 (diode B) 26 ( 20) diode A, 70 ( 50) diode B λ = 870, E e = 1 mw/cm 2 5 ( 30) diode A 10 ( 30) diode B 13 diode A 20 diode B Q65110A For information about RoHS compliance of our products, please visit 25
18 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I P (E v = 1000 lx, standard light A, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns 2.2 PIN Fotodioden im Plastikgehäuse 2.2 PIN photodiodes in plastic package Klares Plastikgehäuse Clear plastic package BPW 34 ± 60 Q62702P0073 1) 39 DIL ( 50) 2 ( 30) SFH 206 K ± 60 Q62702P TO-92 SFH 229 ± ( 18) 0.05 ( 5) Q62702P T 1 SFH 203 ± ( 50) Q62702P T 1 3/4 SFH 213 ± ( 100) Q62702P ( 10) ( R = 20 ) SFH 203 P ± ( 5) Q62702P T 1 3/4 1) conversion to RoHS compliance 03/ For information about RoHS compliance of our products, please visit
19 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I P (E e = 1 mw/cm 2, λ = 870, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns Gehäuse mit Tageslichtfilter für 880 IRED Package with daylight filter matched for 880 IRED SFH 225 FA ± ( 25) Q62702P TO 92 SFH 235 FA ± ( 40) Q62702P SFH 205 FA 60 ( 45) 2 ( 30) 10 Q62702P TO 92 ± BPW 34 FA 50 ( 40) Q62702P1129 1) 39 DIL SFH 229 FA ± ( 22) 0.5 ( 5) Q62702P T 1 SFH 203 FA ± ( 60) Q62702P T 1 3/4 SFH 213 FA ± ( 65) Q62702P ( 10) ( R = 20 ) SFH 203 PFA ± ( 3.6) Q62702P T 1 3/ SFH 204 FA ± ( 43) 2 ( 30) 10 Q62702P TO 92 1) conversion to RoHS compliance 03/2005 For information about RoHS compliance of our products, please visit 27
20 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I P (E e = 1 mw/cm 2, λ = 870, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns Gehäuse mit Tageslichtfilter für 950 IRED Package with daylight filter matched for 950 IRED BP 104 F ( 25) Q62702P0084 1) 47 DIL BPW 34 F 50 ( 40) Q62702P0929 1) SFH 205 F ± ( 45) 2 ( 30) 10 Q62702P TO 92 SFH 204 F ( 43) Q62702P TO 92 1) conversion to RoHS compliance 03/2005 Package Type ϕ sensitive area mm 2 I P ( R = 5, E v = 1000 lx, standard light A) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 20, R L = 50 Ω) ns 2.3 PIN Fotodioden im Metallgehäuse 2.3 PIN photodiodes in metal package BPX 65 ± ( 5.5) 1 ( 5) Q62702P TO 18 1) conversion to RoHS compliance 03/ For information about RoHS compliance of our products, please visit
21 SI-FOTODETEKTOREN SILICON PHOTODETECTORS 3. Foto ICs 3. Photo ICs Package Type ϕ CC Switching threshold E e ( CC = 5 ) mw/cm 2 λ 10% I O ma t PHL / t PLH µs 3.1 Schmitt Trigger IC 3.1 Schmitt Trigger IC SFH 5440 SFH 5441 ± (< 0.320) λ = Q65110A1212 Q65110A SFH 5140 F ± (< 0.05) λ = 950 Q62702P5112 1) < 16 5 (< 15) 19 SFH 5141 F Q62702P5113 1) SFH 5840 SFH 5841 ± (< 0.032) λ = Q62702P5116 Q62702P SFH 5400 ± (<3.2) λ = Q65110A ) conversion to RoHS compliance 03/2005 Package Type ϕ CC Irradiance Responsivity N e ( CC = 5 ) m/µw/cm 2 λ 10% I CC ma 3.2 Linearer erstärker mit Spannungsausgang 3.2 Linear amplifier with voltage output SFH 5130 ± 40 SFH ) conversion to RoHS compliance 03/2005 horizontal: ± 35 vertikal: ± λ = Q62702P5406 1) Q62702P5547 1) 104 Package Type Frequenz khz ϕ min threshold irradiance E e min mw/cm Foto IC für Fernsteuerung 3.3 Photo IC for remote control SFH Q62702P5088 1) SFH Q62702P5089 1) SFH horizontal: ± 50 vertikal: ± typ. Q62702P5090 1) SFH Q62702P5091 1) SFH Q62702P5092 1) 1 SFH ± typ. Q65110A ) conversion to RoHS compliance 03/2005 For information about RoHS compliance of our products, please visit 29
22 SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fotodetektoren für spezielle Anwendungen 4. Photodetectors for special applications Package Type ϕ sensitive area mm 2 I P µa I R ( R = 10 ) na S λ rel % t r,t f ( R = 5 ) µs 4.1 Blauempfindliche Fotodiode 4.1 Blue sensitive photodiode BPW 34 BS Q65110A ± (> 10.8) E e = 1 mw/cm 2 λ = 400 R = 5 2 ( 30) 30% (400 ) 25 (R L = 50 Ω) λ = 850 BPW 34 B Q62702P0945 1) 39 1) conversion to RoHS compliance 03/ Fotodetektoren für den sichtbaren Bereich 4.2 Photodetectors for the visible range Fotodiode mit λ -Kurve Photodiode with λ -Curve BPW 21 ± R = 5 10 (> 5.5) (E = 1000 lx standard light A) 8 ( 200) pa ( R = 1 ) 100% (550 ) 1.5 (R L = 1 kω) Q62702P SFH 2430 ± x (> 4) (E = 1000 lx, standard light A) 0.1 ( 5) Q65110A SMT DIL Package Type ϕ sensitive area mm 2 I PCE ( CE = 5 E v = 20 lx, standard light A) ma CE λ 10% t r,t f (I C = 1 ma, CC = 5, R L = 50 Ω) µs SMT Transistor mit λ -Kurve SMT Transistor with λ -Curve SFH 3410 > Q65110A1211 SFH / Q65110A2653 ± SFH / Q65110A2654 SFH / Q65110A For information about RoHS compliance of our products, please visit
23 SI-FOTODETEKTOREN SILICON PHOTODETECTORS Package Type ϕ sensitive area mm 2 I P (E v = 1000 lx, standard light A, R = 5 ) µa I R ( R = 10 ) na λ 10% t r,t f ( R = 5 ) ns 4.3 Großflächige PIN Fotodiode 4.3 Large area PIN photodiode BPX 61 ± ( 50) 2 ( 30) (R L = 50 Ω) Q62705P Doppelfotodioden 4.4 Dual photodiodes SFH 221 ± ( 15) (R L = 1 kω) Q62702P BPX 48 2 times ( 15) 10 ( 100) (R L = 1 kω) Q62702P0017 1) ± BPX 48F 7.5 ( 4.0) E e = 0.5 mw/cm 2 λ = (R L = 1 kω) Q62702P0305 1) 1) conversion to RoHS compliance 03/2005 For information about RoHS compliance of our products, please visit 31
24 OPTISCHE SENSOREN OPTICAL SENSORS TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN) SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS) 1. Gabellichtschranken 1. Slotted Interrupters SFH 9300 SFH 9301 SFH 9302 SFH 9303 SFH 9304 SFH 9305 SFH 9306 SFH 9310 SFH 9340 Schmitt Trigger SFH SMT Reflexlichtschranken 2. SMT Reflective Sensors SFH 9201 / SFH 9202 SFH 9210 / SFH 9221 SFH 9240 / SFH 9241 Schmitt Trigger 32
25 OPTISCHE SENSOREN OPTICAL SENSORS Package Type Features Slot width mm Aperture slit width on emitter/sensor side mm I CE (I F = 20 ma, CE = 5 ) ma I CEO (I F = 0, CE = 20 ) na F (I F = 20 ma) 1. Gabellichtschranken 1. Slotted Interrupters SFH 9300 no aperture slits, high current transfer ratio 3.65 / > 1 2 ( 50) 1.2 ( 1.4) Q62702P SFH 9301 with vertical aperture slits, high resolution / 0.25 > ( 50) 1.2 ( 1.4) Q62702P SFH 9302 with vertical aperture slits, two mounting tabs / 0.25 > ( 50) 1.2 ( 1.4) Q62702P SFH 9303 with vertical aperture slits, mounting tab on sensor side / 0.25 > ( 50) 1.2 ( 1.4) Q62702P SFH 9304 SFH 9305 with vertical aperture slits, mounting tab on emitter side with vertical aperture slits, mounting tab on sensor side, locating pins / 0.25 > ( 50) 1.2 ( 1.4) Q62702P / 0.5 > ( 50) 1.2 ( 1.4) Q62702P SFH 9306 with vertical aperture slits, locating pins / 0.25 > ( 50) 1.2 ( 1.4) Q62702P SFH 9310 horizontal slits / 0.5 > ( 50) 1.2 ( 1.4) Q62702P SFH 9500 with vertical aperture slits, SMT version, suitable for reflow soldering, locating pins / 0.5 > 1 2 ( 50) 1.2 ( 1.4) Q62702P For information about RoHS compliance of our products, please visit 33
26 OPTISCHE SENSOREN OPTICAL SENSORS Package Type Features Slot width mm Aperture slit width on emitter/sensor side mm CC Threshold input current I F, O N ma Hysteresis I F, OFF / I F, ON Propagation delay time t PHL, t PLH (R L = 280 Ω, CC = 5, I F = 4 ma) µs F (I F = 20 ma) 1. Gabellichtschranken (Forts.) 1. Slotted Interrupters (cont d) SFH 9340 SFH 9341 Schmitt Trigger output, SFH 9340 active low Schmitt Trigger output, SFH 9341 active high / (< 2) ( 1.4) Q62702P5120 Q62702P Package Type I CE (I F = 10 ma, CE = 5, d = 1 mm) ma I CEO ( CE = 20 ) na CE max F (I F = 50 ma) 2. SMT Reflexlichtschranken 2. SMT Reflective Sensors SFH Q65110A2708 SFH / ( 200) Q65110A2698 SFH / Q65110A2716 SFH ( 1.65) Q65110A2712 SFH / Q65110A2705 SFH / ( 50) Q65110A2710 SFH / Q65110A2709 SFH / Q65110A Package Type Feature I CE (I F = 8 ma, CE = 5, d = 5 mm) ma I CEO ( CE = 20 ) na Threshold current I TH ma CE max F (I F = 10 ma) SFH 9210 CSEL emitter ( 200) 2.6 (< 5) (t 2 min) 1.8 ( 2.3) Q65110A Package Type Feature I P (I F = 8 ma, R = 5, d = 5 mm) µa I R ( R = 10 ) pa Threshold current I TH ma F (I F = 10 ma) SFH 9221 CSEL emitter Photodiode output > (< 5) 1.8 ( 2.3) Q65110A For information about RoHS compliance of our products, please visit
27 OPTISCHE SENSOREN OPTICAL SENSORS Package Type Features CC SFH 9240 SFH 9241 Schmitt Trigger Output, active low Schmitt Trigger Output, active high Threshold input current I F, on ( CC = 5, d = 1 mm) ma Hysteresis I F, OFF / I F, ON Propagation delay time t PHL, t PLH (R L = 280 Ω, CC = 5, I F = 20 ma) ns F (I F = 50 ma) (< 10) ( 1.65) Q65110A2714 Q65110A For information about RoHS compliance of our products, please visit 35
28 IR-LUMINESZENZDIODEN INFRARED EMITTERS TYPENÜBERSICHT (IR-LUMINESZENZDIODEN) SUMMARY OF TYPES (INFRARED EMITTERS) 1. Emitter in SMT 1. Emitter in SMT SmartLED SFH 4000 / SFH 4010 SFH 4020 / SFH 4080 TOPLED SFH 420 / SFH 4211 / SFH 421 / SFH 4200 SFH 4257 / SFH 4271 SFH 4272 / SFH 4273 TOPLED RG SFH 4281 Mini TOPLED SFH 4203 TOPLED with Lens SFH 4209 / SFH 4289 / SFH 4219 SFH 4600 / SFH 4605 SFH 4650 / SFH 4655 SFH 4680 / SFH 4685 SMR SFH 4580 SFH 4585 SIDELED SFH 425 / SFH 426 / SFH 4205 / SFH 4255 Multi TOPLED SFH 331 / SFH 7222 / SFH 7221 / SFH 7225 / SFH 7226 SMR SFH 4500 / SFH 4510 SFH 4505 / SFH 4515 SmartLED 0603 SFH
29 IR-LUMINESZENZDIODEN INFRARED EMITTERS TYPENÜBERSICHT (IR-LUMINESZENZDIODEN) SUMMARY OF TYPES (INFRARED EMITTERS) 2. Hochleistungsemitter High Power Emitter 850 SFH 4050 SFH 4250 SFH 4259 SFH 4650 / SFH 4655 SFH 4255 SFH 4550 SFH 4350 SFH Sehr schnelle Emitter High speed emitter 950 SmartLED SFH 4000 TOPLED SFH 4200 Power TOPLED SFH 4202 TOPLED with Lens SFH 4209 SFH 4600 / SFH 4605 SIDELED SFH 4205 Mini TOPLED SFH 4203 Micro SIDELED SFH 4204 SMR SFH 4500 / SFH 4505 SFH 4301 SFH 4501 / SFH 4502 / SFH
30 IR-LUMINESZENZDIODEN INFRARED EMITTERS TYPENÜBERSICHT (IR-LUMINESZENZDIODEN) SUMMARY OF TYPES (INFRARED EMITTERS) 4. Emitter im Plastikgehäuse 4. Emitters in Plastic Package IRL 80 A / IRL 81 A SFH 4110 SFH 4111 SFH 4113 SFH 484 / SFH 485 / SFH 486 SFH 4550 LD 274 LD 271 SFH 415 / SFH 4501 / SFH 4502 SFH 4503 SFH 487 SFH 409 SFH 485 P SFH 487 P SFH 4301 SFH 4350 LD 261 LD 263 SFH
31 IR-LUMINESZENZDIODEN INFRARED EMITTERS TYPENÜBERSICHT (IR-LUMINESZENZDIODEN) SUMMARY OF TYPES (INFRARED EMITTERS) 5. Emitter im Metallgehäuse 5. Emitters in Metal Package SFH 464 / SFH 483 / LD 242 SFH 4850 SFH 400 / SFH 480 / SFH 4840 SFH 4860 SFH 401 SFH 482 SFH 4881 SFH
32 IR-LUMINESZENZDIODEN INFRARED EMITTERS 1. Emitter in SMT 1. Emitter in SMT Package Type λ peak ϕ I e mw/sr F t r,t f ns 1.1 MIDLED 1.1 MIDLED SFH typ Q65110A1575 SFH typ Q65110A1570 SFH typ Q65110A1572 ± ( 1.8) SFH typ Q65110A SFH typ Q65110A1571 SFH typ Q65110A1569 Package Type λ peak ϕ I e mw/sr F t r,t f ns 1.2 SmartLED 1.2 SmartLED SmartLED SFH ± 80 SFH SFH ± 15 > 1.6 typ. 4.4 > 1.0 typ. 2.5 typ. 8 (at I F = 8 ma) 1.5 ( 1.8) 10 Q65110A ( 1.5) 500 Q65110A ( 2.5) (at I F = 8 ma, 2 Q65110A SFH ± 80 > 1.0 typ Q65110A ( 1.8) SFH typ Q65110A SmartLED For information about RoHS compliance of our products, please visit
33 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e mw/sr F t r,t f ns 1.3 TOPLED /SIDELED Familie 1.3 TOPLED /SIDELED Family TOPLED TOPLED TOPLED SFH ± ( 1.5) 500 Q65110A2473 SFH Q65110A2515 SFH SFH typ Q65110A Q65110A SFH Q65110A TOPLED RG SFH ± 65 4 typ ( 1.8) 10 Q65110A Mini TOPLED SFH 4250 typ. 14 Q65110A Power TOPLED SFH 4257 typ. 6 Q65110A2466 ± 60 > 1 SFH Q65110A2521 typ TOPLED SFH SFH > 0.16 typ (at I F = 20 ma) > 0.63 typ. 1 (at I F = 50 ma) 2.0 ( 2.5) (at I F = 20 ma) 2.1 ( 2.8) (at I F = 50 ma) Q65110A Q65110A Package Type λ peak ϕ I e mw/sr F t r,t f ns TOPLED mit Linse TOPLED with Lens SFH SFH 4219 SFH ± 25 > 6.3 typ. 24 > 4 typ. 13 > 6.3 typ ( 1.8) 10 Q65110A ( 1.5) Q65110A Q65110A ( 1.8) SFH typ Q65110A Power TOPLED w. Lens For information about RoHS compliance of our products, please visit 41
34 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e mw/sr F t r,t f ns SIDELED SIDELED SIDELED SFH 425 SFH ( 1.5) 500 Q65110A typ Q65110A2498 SFH ( 1.8) 500 Q65110A2512 ± 60 SFH typ Q65110A SFH typ. 2.5 (I F = 40 ma, 1.4 (I F = 40 ma, 7 (I F = 40 ma) Q65110A MicroSIDELED Multi TOPLED Multi TOPLED Zwei Sender in SMT Multi TOPLED Two Emitters in SMT Multi TOPLED Package Type λ peak ϕ I (I F = 2 ma) mcd I e mw/sr F t r,t f ns 880 ± (I F = 100 ma) 500 SFH ± (I F = 2 ma) 2.0 (I F = 10 ma) 450 Q65110A Empfänger/Sender in SMT Multi TOPLED Detector/Emitter in SMT Multi TOPLED Package Type Sender Emitter SFH 331-JK Empfänger Detector λ peak ϕ I (I F = 10 ma) mcd F (I F = 10 ma) t r,t f I F = 100 ma, t p = 10 µs, R L = 50 Ω ns 635 ± ( 2.6) 300, 150 I PCE (λ = 950 CEO λ 10% t r,t f sensitive, E e = (I C = 1 ma, area 0.1 mw/cm 2, CC = 5, CE = 5 ) R L = 1 kω) mm 2 µa µs Q65110A Package Type Sender Emitter SFH 7221 Empfänger Detector λ peak ϕ I mw/sr F (I F = 100 ma) t r,t f I F= 100 ma, R L = 50 Ω) ns 880 ± 60 > ( 1.8) 500 I PCE (λ = 880 CEO λ 10% t r,t f sensitive, E e = (I C = 1 ma, area 0.1 mw/cm 2, CC = 5, CE = 5 ) R L = 1 kω) mm 2 µa µs Q65110A For information about RoHS compliance of our products, please visit
35 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type Sender Emitter SFH 7225 Empfänger Detector Package Type Sender Emitter SFH 7226 Empfänger Detector λ peak ϕ I (I F = 20 ma) mcd 591 ± F (I F = 20 ma) sensitive area mm 2 I PCE (E v = 1000 lx Standard light A CE = 5 ) µa CEO Crosstalk I PCE (I F = 20 ma, CE = 5 ) µa typ. 35 > 0.5 λ peak ϕ I (I F = 20 ma) mcd 645 ± F (I F = 20 ma) sensitive area mm 2 I PCE (E v = 1000 lx Standard light A CE = 5 ) µa CEO Crosstalk I PCE (I F = 20 ma, CE = 5 ) µa typ. 35 > 2 Q65110A Q65110A Package Type λ peak ϕ I e mw/sr F t r,t f ns 1.4 SMR 1.4 SMR SFH typ ( 1.8) 10 Q65110A SFH 4510 SFH ± typ typ ( 1.5) 500 Q65110A ( 1.8) 10 Q65110A SFH typ ( 1.5) 500 Q65110A SFH 4580 Q65110A ± typ ( 1.8) 500 SFH 4585 Q65110A For information about RoHS compliance of our products, please visit 43
36 IR-LUMINESZENZDIODEN INFRARED EMITTERS 2. Hochleistungsemitter High Power Emitter 850 Package Type λ peak ϕ I e mw/sr F t r,t f ns SFH 4050 ± 80 typ. 7 Q65110A SmartLED 0603 SFH 4250 typ. 14 Q65110A PowerTOPLED ± 60 SFH 4257 typ. 6 Q65110A TOPLED SFH 4259 ± 25 typ. 30 Q65110A PowerTOPLED w. Lens 1.5 ( 1.8) at I F = 100 ma, t P = 20 ms SFH ± 60 typ Q65110A SIDELED 2.4 ( 3.0) at I F = 1 A, t P = 100 µs SFH 4650 Q65110A1572 MIDLED ± 20 typ SFH 4655 Q65110A1569 MIDLED SFH 4550 ± 3 typ. 700 Q65110A T 1 3/4 SFH 4350 ± 15 typ. 70 Q65110A T 1 44 For information about RoHS compliance of our products, please visit
37 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak TO 18 ϕ SFH 4850 E ± 40 typ. 7 I e mw/sr F 1.5 ( 1.8) at I F = 100 ma, t P = 20 ms 2.4 ( 3.0) at I F = 1 A, t P = 100 µs t r,t f ns 12 Q65110A Sehr schnelle Emitter High Speed Emitter 950 Package Type λ peak ϕ I e mw/sr F t r,t f ns SFH 4000 ± 80 > 1.6 typ. 3.5 Q65110A SmartLED SFH typ. 10 Q65110A TOPLED ± 60 SFH 4202 > 6.3 typ. 10 Q65110A PowerTOPLED SFH 4209 ± 25 > 10 typ. 17 Q65110A TOPLED with Lens ( 1.8) 10 SFH 4205 ± 25 4 typ. 10 Q65110A SIDELED SFH 4600 Q65110A1575 ± 20 typ SFH 4605 Q65110A1576 SFH 4203 ± 65 4 typ. 8 Q65110A Mini TOPLED For information about RoHS compliance of our products, please visit 45
38 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e mw/sr F t r,t f ns SFH 4204 ± (I F = 400 ma, Q65110A Micro SIDELED SFH 4500 Q65110A T 1 3/4 SMR ± typ. 85 SFH 4505 Q65110A T 1 3/4 SMR ( 1.8) 10 SFH 4301 ± typ. 75 Q62702P T 1 SFH 4501 ± 7 63 typ. 110 Q62702P SFH 4502 ± typ. 60 Q62702P T 1 3/4 SFH 4503 ± 4 63 typ. 250 Q62702P Emitter im Plastikgehäuse 4. Emitter in plastic package Package Type λ peak ϕ I e mw/sr F 4.1 Radiale Gehäuse 4.1 Radial packages SFH 4550 ± 3 typ. 700 Q65110A T 1 3/4 850 SFH 4350 ± 17 typ. 70 Q65110A ( 1.8) T 1 SFH 484 SFH ± Q62703Q1092 Q62703Q SFH ± Q62703Q T 1 3/4 SFH 485 SFH ± Q62703Q1093 Q62703Q For information about RoHS compliance of our products, please visit
39 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e mw/sr F SFH 487 SFH SFH ± Q62703Q1095 Q62703Q2174 Q62703Q T 1 SFH 485 P 880 ± ( 1.8) Q62703Q T 1 3/4 SFH 487 P ± 65 2 Q62703Q T 1 LD 274 LD ± Q62703Q1031 Q62703Q T 1 3/4 T 1 3/4 LD 271 LD 271 H LD 271 L LD 271 LH SFH 415 SFH 415-U 950 ± 25 ± ( 10) ( 1.5) Q62703Q0148 Q62703Q0256 Q62703Q0833 Q62703Q0838 Q62702P0296 Q62702P T 1 3/4 SFH 4511 ± 4 63 Q62703Q5557 SFH 409 SFH ± Q62702P0860 Q62702P T 1 Package Type λ peak ϕ I e (I F = 20 ma, mw/sr F (I F = 20 ma, 4.2 Sidelooker 4.2 Sidelooker IRL 81 A 880 ± ( 1.8) Q68000A8000 1) 78 IRL 80 A 950 ± ( 1.5) Q68000A7851 1) For information about RoHS compliance of our products, please visit 47
40 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e (I F = 20 ma, mw/sr F (I F = 20 ma, 4.2 Sidelooker (Forts.) 4.2 Sidelooker (cont d) SFH ± ( 1.4) Q62702P5072 1) 31 1) conversion to RoHS compliance 03/2005 Package Type λ peak ϕ E e (d = 6 mm, I F = 4 ma) mw/cm 2 F (I F = 20 ma, SFH 4111 ± 30 horizontal ± 60 vertical Q62702P ( 1.6) SFH 4113 ± 33 horizontal ± 43 vertical Q62702P Package Type λ peak ϕ I e mw/sr F 4.3 Zeilen im Plastikgehäuse 4.3 Arrays in Plastic Package LD 261 LD Q62703Q0395 1) Q62703Q0067 1) 36 Array LD 262 LD 263 LD 264 LD 265 LD 266 LD 267 LD 268 LD 269 LD ± ( 1.4) (I F = 50 ma, Q62703Q0070 1) Q62703Q0071 1) Q62703Q0072 1) Q62703Q0073 1) Q62703Q0074 1) Q62703Q0075 1) Q62703Q0076 1) Q62703Q0077 1) Q62703Q0078 1) 37 SFH 405 ± ( 1.4) (I F = 40 ma, Q62702P0835 1) 35 1) conversion to RoHS compliance 03/ For information about RoHS compliance of our products, please visit
41 IR-LUMINESZENZDIODEN INFRARED EMITTERS 5. Emitter im Metallgehäuse 5. Emitters in Metal Package Package Type λ peak ϕ I e mw/sr F SFH 464 E 7800 ± 23 1 (I F = 50 ma, Q62702P1745 1) 40 TO (I F = 50 ma, SFH 4860 ± (I F = 50 ma, Q62702P5053 1) 87 TO 18 SFH ± 40 typ. 7 Q65110A2093 1) 40 TO 18 SFH 480 SFH 480-2/3 ± 6 40 Q62703Q1087 1) Q62703Q5195 1) 48 TO 18 SFH 483-L/M E 7800 ± Q62703Q4755 1) 40 TO 18 SFH 482 SFH 482-1/2 SFH 482-2/3 880 ± ( 1.8) Q62703Q1089 1) Q62703Q4771 1) Q62703Q4754 1) 49 TO 18 SFH 482-M E Q62703Q2186 1) SFH 4881 ± 5 40 typ. 72 Q62702P5302 1) 97 TO 46 SFH 4883 ± 35 4 typ. 8 Q62702P5303 1) 98 TO 46 LD 242-2/3 LD 242 E ± ( 1.5) Q62703Q4749 1) Q62703Q3509 1) 40 TO 18 For information about RoHS compliance of our products, please visit 49
42 IR-LUMINESZENZDIODEN INFRARED EMITTERS Package Type λ peak ϕ I e mw/sr F SFH 400 ± 6 20 Q62702P0096 1) 48 TO ( 1.5) SFH 401 ± Q62702P0097 1) 88 TO 18 U- Emitter U- Emitter SFH ± 3 typ. 45 (I F = 30 ma, 3.7 (< 4.3) (I F = 30 ma, Q65110A1303 1) 48 TO 18 1) conversion to RoHS compliance 03/ For information about RoHS compliance of our products, please visit
43 IR-LUMINESZENZDIODEN INFRARED EMITTERS Lochblendeessung Für Lichtschrankenanwendungen sind Bauteile lieferbar, die eine Lochblendeessung durchlaufen haben. Diese Messung ist durch den Anhang E 7800 an die Typenbezeichnung gekennzeichnet. Aperture measurement Components for light reflection switch applications are supplied which have passed an aperture measurement. This measurement is denoted by E 7800 added to the type designation. Aperture L Detector 10 x 10 mm 2 Type L (mm) A (mm) LD 242 SFH 464 SFH 482 SFH 483 Ø 1.1 Ø 1.1 Ø 2.0 Ø A 100 mm OHA00230 orteile Bei der Lochblendeessung wird nur diejenige Strahlung in Achsrichtung bewertet, die direkt aus der Oberfläche des Chips austritt. Reflexionen der Bodenplatte und Seitenstrahlung fließen nicht in die I e -Messung ein. Diese reflektierte Strahlung ist störend, wenn die Chipoberfläche über Zusatzoptiken abgebildet wird, z.b. beim Aufbau von Lichtschranken mit großer Reichweite. Der Anwender erhält durch die Lochblendeessung ein für Lichtschrankenapplikationen optimal gemessenes Bauteil. Advantages Only the radiation in axial direction emitting directly from the chip surface will be evaluated during aperture measurement. Radiation reflected by the bottom plate and sidefacing of the chip will not be evaluated. This reflected radiation is disruptive when the chip surface is supplemented by an additional optical system e.g. in the construction of reflection switches. By using components which have passed the aperture measurement test, the user obtains devices which are optimally suited for the construction of reflection switches. 51
44 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN Maßbilder in mm (inch) SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Outline Drawings dimensions in mm (inch) Figure 1 SFH 5110 Figure 2 SFH 320, SFH 320 FA (0.961) 23.4 (0.921) 32.0 (1.260) 30.0 (1.181) 6.1 (0.240) 5.9 (0.232) 1.3 (0.051) 2.8 (0.110) 6.1 (0.240) 5.9 (0.232) 3.5 (0.138) 3.3 (0.130) 5.1 (0.201) 4.9 (0.193) 3.4 (0.134) Collector marking 2.6 (0.102) 2.3 (0.091) (2.4) (0.095) 0.1 (0.004) (typ.) 4 ±1 3.7 (0.146) 3.3 (0.130) 0.18 (0.007) 0.12 (0.005) 1.7 (0.067) GPLY6030 Pinning SFH OUT 2 GND 3 CC GEOY6985 Figure 3 SFH 3211, SFH 3211 FA Figure 4 SFH 325, SFH 325 FA, (2.4 (0.094)) 3.4 (0.134) 2.6 (0.102) 2.3 (0.091) (2.4 (0.094)) max 4 ±1 1.7 (0.067) 1.0 (0.039) min (0.004) 5.4 (0.213) 5.0 (0.197) 2.8 (0.110) 2.4 (0.094) Collector Collector marking (1.4 (0.055)) 4.2 (0.165) 3.8 (0.150) Emitter (2.85 (0.112)) Collector marking Collector GPLY6067 (2.9 (0.114)) (R1) () 3.8 (0.150) 3.4 (0.134) 4.2 (0.165) 3.8 (0.150) GPLY6068 Figure 5 SFH 331, SFH 7225, SFH 7226 Figure 6 SFH (0.102) 2.3 (0.091) (0.067) 2.6 (0.102) 2.3 (0.091) (0.067) 3.4 (0.134) A C C E (2.4 (0.094)) 0.1 (0.004) typ 3.7 (0.146) 3.3 (0.130) 3.4 (0.134) C A C E (2.4 (0.094)) 0.1 (0.004) typ 3.7 (0.146) 3.3 (0.130) 1 4 Package marking Emission color : super-red (SFH 331) 0.18 (0.007) 0.12 (0.005) GPLY Package marking (0.007) 0.12 (0.005) GPLY
45 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN Maßbilder in mm (inch) SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Outline Drawings dimensions in mm (inch) Figure 7 SFH 3500, SFH 3500 FA, SFH 2500, SFH 2500 FA, SFH 4510 Figure 8 SFH 3505, SFH 3505 FA, SFH 2505, SFH 2505 FA SFH (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 2.7 (0.106) 2.4 (0.094) ((3.2) (0.126)) ((R2.8 (0.110)) 4.5 (0.177) 3.9 (0.154) 8.0 (0.315) ((3.2) (0.126)) 2.05 (0.081) 7.4 (0.291) R 1.95 (0.077) ((R2.8 (0.110)) 2.7 (0.106) 2.4 (0.094) 3.7 (0.146) 3.3 (0.130) Cathode/ Collector 14.7 (0.579) 13.1 (0.516) ( ) 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) 4.8 (0.189) 4.4 (0.173) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6968 Cathode/ Collector 15.5 (0.610) 14.7 (0.579) 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) 4.8 (0.189) 4.4 (0.173) ( ) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6969 Figure 9 SFH 3400 Figure 10 SFH (0.039) 0.2 (0.008) 0.1 (0.004) 0.0 (0.000) 1.0 (0.039) 0.2 (0.008) 0.1 (0.004) 0.0 (0.000) 4.8 (0.189) 4.4 (0.173) Active area 0.55 mm 2 not connected 1.9 (0.075) 4.8 (0.189) 4.4 (0.173) Active area 0.55 mm 2 Collector Base 1.9 (0.075) Collector 2.7 (0.106) 2.5 (0.098) Emitter GEOY6953 Emitter 2.7 (0.106) 2.5 (0.098) GEOY6973 Figure 11 SFH 3201 Figure 12 SFH M A 0.15 (0.006) 0.13 (0.005) Active area 0.55 (0.022) 6.2 (0.244) A 5.8 (0.228) 3.4 (0.134) M B ( ) 1.27 (0.050) Emitter Collector (0.165) 3.8 (0.150) 1.7 (0.067) B GEOY6982 Collector 1.15 (0.045) 0.95 (0.037) 4.8 (0.189) 4.4 (0.173) Active area 0.29 mm (0.008) 0.2 (0.008) Emitter 0.2 (0.008) 0.1 (0.004) 0.0 (0.000) 2.7 (0.106) 2.5 (0.098) (not connected) 1.9 (0.075) GEOY
46 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN Maßbilder in mm (inch) SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Outline Drawings dimensions in mm (inch) Figure 13 BP 104 FS, BP 104 S, BP 104 FAS Figure 14 BPW 34 S, BPW 34 FS, BPW 34 FAS, BPW 34 BS SFH 2430 Figure 15 BPW 34 S R18R, BPW 34 FAS R18R, BPW 34 FS R18R ( ) ( ) ( ) 4.5 (0.177) 4.3 (0.169) 6.7 (0.264) 6.2 (0.244) (0.008) 0.1 (0.004) 1.6 (0.063) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 4.5 (0.177) 4.3 (0.169) 6.7 (0.264) 6.2 (0.244) (0.008) 0.1 (0.004) 1.8 (0.071) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) (0.008) 0.1 (0.004) 1.8 (0.071) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Figure 16 SFH 2400, SFH 2400 FA Figure 17 KOM 2125, KOM 2125 FA Figure 18 SFH 5440, SFH (0.189) 4.4 (0.173) 1.0 (0.039) Active area 1 x 1 Cathode 0.2 (0.008) 0.1 (0.004) 2.7 (0.106) 2.5 (0.098) not connected Anode 0.0 (0.000) 1.9 (0.075) GEOY6972 Photosensitive area A = 2 (0.079) x 2 (0.079) B = 5 (0.197) x 2 (0.079) 5.2 (0.205) 5.0 (0.197) 2 3 A B (0.335) Cathode 8.2 (0.323) 1.4 (0.055) ±0.2 (0.008) 4.5 (0.177) 4.3 (0.169) 6.7 (0.264) 6.2 (0.244) ( ) Active area GEOY (0.075) 1.0 (0.039) 4.8 (0.189) 4.4 (0.173) GND Active area 0.12 (0.005) 0.2 (0.008) 0.1 (0.004) 0.0 (0.000) CC OUT 0.15 (0.006) ±0.1 (0.004) 2.7 (0.106) 2.5 (0.098) GEOY6990 Figure 19 SFH 5140 F, SFH 5141 F Figure 20 SFH 5840, SFH 5841 R R 1.3 (0.051) (60 ) 1.27 (0.050) 2.8 (0.110) 2.2 (0.087) 2.0 (0.079) 2.7 (0.106) 1.04 (0.041) 3.1 (0.122) 0.84 (0.033) 0.86 (0.034) (0.700) 4.1 (0.161) (0.680) 3.9 (0.154) 2.9 (0.114) ( x 45 ) 0.66 (0.026) 2.5 (0.098) 1.05 (0.041) 0.85 (0.033) GND OUT CC 1.6 (0.063) 1.4 (0.055) 1.27 (0.050) GEOY6001 ø0.45 (0.018) GND CC OUT 14.5 (0.571) 12.5 (0.492) 5.1 (0.201) 4.8 (0.189) 6.2 (0.244) 5.4 (0.213) ø4.8 (0.189) ø4.6 (0.181) 5.6 (0.220) 5.3 (0.209) GMOY
47 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN Maßbilder in mm (inch) SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Outline Drawings dimensions in mm (inch) Figure 21 SFH ( ) ( ) 6.7 (0.264) 6.2 (0.244) GND (0.177) 4.3 (0.169) CC Photosensitive area x OUT 4.0 (0.157) 3.7 (0.146) GEOY6966 Figure 23 SFH 309, SFH 309 FA, SFH 229, SFH 229 FA Figure 24 SFH 310, SFH 310 FA Collector (Transistor) Cathode (Diode) 3.5 (0.138) 1.8 (0.071) 29 (1.142) 27 (1.063) Area not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) ø3.1 (0.122) ø2.9 (0.114) 6.3 (0.248) 5.9 (0.232) 4.0 (0.157) 3.6 (0.142) GEOY6653 Collector 1.8 (0.071) 29.0 (1.142) 27.0 (1.063) Area not flat 4.8 (0.189) 4.4 (0.173) ø2.9 (0.114) ø2.7 (0.106) 3.7 (0.146) 3.5 (0.138) 6.1 (0.240) 5.7 (0.224) 3.4 (0.134) 3.1 (0.122) GEXY6710 Figure 25 SFH 309 P, SFH 309 PFA Figure 26 SFH 313, SFH 313 FA SFH 213, SFH 213 FA 9.0 (0.354) Emitter 1.8 (0.071) 29 (1.142) 27 (1.063) Area not flat 3.1 (0.122) 2.5 (0.098) 2.0 (0.079) 1.7 (0.067) 3.5 (0.138) 4.5 (0.177) 4.1 (0.161) ø3.1 (0.122) ø2.9 (0.114) 4.0 (0.157) 3.6 (0.142) GEOY (0.071) 8.2 (0.323) Area not flat 29 (1.142) 27 (1.063) Cathode (Diode) Collector (Transistor) 7.8 (0.307) 7.5 (0.295) ø5.1 (0.201) ø4.8 (0.189) 5.7 (0.224) 5.1 (0.201) 5.9 (0.232) 5.5 (0.217) GEXY
48 SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN Maßbilder in mm (inch) SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Outline Drawings dimensions in mm (inch) Figure 27 SFH 314, SFH 314 FA Figure 28 SFH 300, SFH 300 FA Area not flat 1.8 (0.071) 29.5 (1.161) 27.5 (1.083) Cathode (Diode) Collector (Transistor) 6.9 (0.272) 6.1 (0.240) 5.7 (0.224) 5.5 (0.217) 4.0 (0.157) 3.4 (0.134) ø5.1 (0.201) ø4.8 (0.189) 5.9 (0.232) 5.5 (0.217) GEXY6630 Emitter 1.8 (0.071) Area not flat 1.0 (0.039) 1.3 (0.051) 1.0 (0.039) 25.2 (0.992) 24.2 (0.953) Collector 11.6 (0.457) 11.2 (0.441) 4.5 (0.177) 4.2 (0.165) 7.8 (0.307) 7.5 (0.295) 9.0 (0.354) 8.2 (0.323) ø5.1 (0.201) 5.9 (0.232) 5.5 (0.217) GEOY6652 Figure 29 SFH 303, SFH 303 FA Figure 30 LPT 80 A 9.0 (0.354) 8.2 (0.323) 7.8 (0.307) 7.5 (0.295) 6.9 (0.272) 11.5 (0.453) 10.9 (0.429) Area not flat 25.2 (0.992) 24.2 (0.953) B C E 1.8 (0.071) 5.9 (0.232) 5.5 (0.217) 5.1 (0.201) 4.8 (0.189) GEOY (0.060) Collector (0.650) (0.630) 1.52 (0.060) 0.64 (0.025) 0.46 (0.018) 0.64 (0.025) 0.46 (0.018) 1.52 (0.060) Plastic marking R = 0.76 (0.030) 5.84 (0.230) 5.59 (0.220) 1.29 (0.051) 1.14 (0.045) 2.34 (0.092) 2.08 (0.082) 4.57 (0.180) 4.32 (0.170) 2.03 (0.080) 1.70 (0.067) 1.45 (0.057) Approx. weight 0.2 g GEOY6391 Figure 31 SFH 3100 F, SFH 4110 Figure 32 BPX 43, BPY 62 Emitter/ Cathode 1.42 (0.056) 1.22 (0.048) 16.5 (0.650) 16.0 (0.630) 1.04 (0.041) 0.84 (0.033) (0.700) (0.680) 60 R R 4.1 (0.161) 3.9 (0.154) x (0.122) 2.9 (0.114) 1.04 (0.041) 0.84 (0.033) 1.6 (0.063) 1.4 (0.055) 1.3 (0.051) 0.84 (0.033) 0.64 (0.025) 2.2 (0.087) 2.0 (0.079) 2.8 (0.110) GEOY6976 ø0.45 (0.018) 14.5 (0.571) 12.5 (0.492) (2.7 (0.106)) ø4.8 (0.189) ø4.6 (0.181) 5.1 (0.201) 4.8 (0.189) 6.2 (0.244) 5.4 (0.213) sensitive area E C B ø5.6 (0.220) ø5.3 (0.209) GMOY
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FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
Current Sensing Chip Resistor
Features -3 atts power rating in 1 att size, 1225 package -Low CR of ±100 PPM/ C -Resistance values from 1m to 1 ohm -High purity alumina substrate for high power dissipation -Long side terminations with
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
RC series Thick Film Chip Resistor
RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»
Trimmable Thick Film Chip Resistor
rimmable hick ilm Chip Resistor R Series rimmable hick ilm Chip Resistor Scope -his specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. eatures
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC
Gearmotor Data. SERIES GM9000: We have the GM9434H187-R1
SERIES GM9: We have the GM9434H187-R1 Gearmotor Data Item Parameter Symbol Units 5.9:1 11.5:1 19.7:1 38.3:1 65.5:1 127.8:1 218.4:1 425.9:1 728.1:1 1419.8:1 2426.9:1 4732.5:1 1 Max. Load Standard Gears
Artiste Picasso 9.1. Total Lumen Output: lm. Peak: cd 6862 K CRI: Lumen/Watt. Date: 4/27/2018
Color Temperature: 62 K Total Lumen Output: 21194 lm Light Quality: CRI:.7 Light Efficiency: 27 Lumen/Watt Peak: 1128539 cd Power: 793 W x: 0.308 y: 0.320 Test: Narrow Date: 4/27/2018 0 Beam Angle 165
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
Photomultiplier Tube Assemblies
hotomultiplier Tube Assemblies hotomultiplier Tube Assemblies hotomultiplier tube assemblies are made up of a photomultiplier tube, a voltagedivider circuit and other components, all integrated into a
Thin Film Precision Chip Resistor (AR Series)
Construction D1 L (AR Series) Features -Advanced thin film technology -Very tight tolerance down to ±0.01% -Extremely low TCR down to ±5PPM/C -Wide resistance range 1ohm ~ 3Mega ohm -Miniature size 0201
Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of
Product: Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512 official distributor of Current Sensing Thick Film Chip Resistor-SMDB Series 1. Scope -This specification
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529
FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
Thin Film Precision Chip Resistor-AR Series
hin Film Precision Chip Resistor-AR Series Construction L D1 3 4 5 6 D2 9 8 7 1 2 1 Alumina Substrate 4 Edge Electrode (NiCr) 7 Resistor Layer (NiCr) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Overcoat
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
Carbon Film Leaded Resistor
Features -The most economic industrial investment -Standard tolerance: +/-5% (available +/-2%) -Excellent long term stability -Termination: Standard solder-plated copper lead Applications -Telecommunication
65W PWM Output LED Driver. IDPV-65 series. File Name:IDPV-65-SPEC
IDPV65 series ~ A File Name:IDPV65SPEC 07060 IDPV65 series SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note.
+85 C Snap-Mount Aluminum Electrolytic Capacitors. High Voltage Lead free Leads Rugged Design. -40 C to +85 C
+85 C Snap-Mount Capacitors FEATURES High ripple Current Ratings Large Case Size Selection Extended Life High Voltage Lead free Leads Rugged Design SPECIFICATIONS Tolerance ±20% at 120Hz, 20 C Operating
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
38BXCS STANDARD RACK MODEL. DCS Input/Output Relay Card Series MODEL & SUFFIX CODE SELECTION 38BXCS INSTALLATION ORDERING INFORMATION RELATED PRODUCTS
DCS Input/Output Relay Card Series STANDARD RACK MODEL 38BXCS MODEL & SUFFIX CODE SELECTION 38BXCS MODEL CONNECTOR Y1 :Yokogawa KS2 cable use Y2 :Yokogawa KS9 cable use Y6 :Yokogawa FA-M3/F3XD32-3N use
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
MCB and MHC Series Chip Ferrite Bead for Automotive Applications Qualified based on AEC-Q200
RoHS MC and MHC Series Chip Ferrite ead for Automotive Applications Qualified based on AEC-Q200 Explanation of Part Number MC 1608 W 12 1 H P - 1 2 3 4 5 6 7 8 9 1. Series Name 2. Size Code: the first
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
CL-SB SLIDE SWITCHES CL - SB B T FEATURES PART NUMBER DESIGNATION. RoHS compliant
CL-SB RoHS ompliant INTERNAL STRUCTURE 1 6 4 FEATURES Part name Cover Slider Housing Moving ontat Fixed ontat pin 5 Material Flammability Stainless steel (SUS 4) UL94V- Polyamido PPS UL94V- Polyphenylenesulphide
INPAQ Global RF/Component Solutions
MCB & MHC W Series Specification Product Name Series Multilayer Chip Ferrite Bead MCB & MHC W Series Size EIAJ 1005/1608/2012/3216/4516 MCB and MHC Series Chip Ferrite Bead for Automotive Applications
Metal Film Flame-Proof Resistors
Features -Low Noise -Low TCR from ±15~100PPM/ -High Precision from ±0.1%~1% -Complete Flameproof Construction UL-1412. -Coating meets UL94V-0 Applications -Telecommunication -Medical Equipment -Consumer
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
Metal Film Leaded Precision Resistor
Features Excellent overall stability Very tight tolerance down to ±0.05% Extremely low TCR down to ±5 PPM/ C High power rating up to 3 Watts Excellent ohmic contact Construction Applications Telecommunication
SMD Wire Wound Ferrite Chip Inductors - LS Series. LS Series. Product Identification. Shape and Dimensions / Recommended Pattern LS0402/0603/0805/1008
SMD Wire Wound Ferrite Chip Inductors - LS Series LS Series LS Series is the newest in open type ferrite wire wound chip inductors. The wire wound ferrite construction supports higher SRF, lower DCR and
CL-SB SLIDE SWITCHES CL - SB B T FEATURES PART NUMBER DESIGNATION. RoHS compliant
CL-SB RoHS ompliant INTERNAL STRUCTURE 1 6 4 5 Part name Material Flammability FEATURES Cover Stainless steel (SUS 4) Slider Housing Moving ontat Fixed ontat pin Polyamido Polyphenylenesulphide Copper
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
Shape Square. Tolerance of Varistor Voltage For Varistor voltage<68, Special For Varistor voltage 68, 10% Lead Wire Type Straight Cut Lead
Leaded Varistor for urge uppression VP eries Operating Temp. : -40 ~ +85 FEATURE Fast response Excellent clamping ratio, high peak current and pulse energy withstanding characteristics, providing strong
Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction
TS-HA/HB Series 105 C, 3000 hours Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction RoHS Compliant Rated Working Voltage: Operating Temperature:
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
MS SERIES MS DESK TOP ENCLOSURE APPLICATION EXAMPLE FEATURE. Measuring instruments. Power supply equipments
MS SERIES MS DESK TOP ENCLOSURE FEATURE Available in 176 sizes. Screws are not appeared on the surface. Usable as rack mount case with optinal mounting bracket. There are no ventilation hole for cover
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
Thyristor & Diode Modules
Thyristor & We offer a broad range of PowerBLOCK modules containing thyristor and diode pellets in a voltage range of 1200V to 4400V and a current range of 61A up to 1070A. The modules are designed and
Specification. code ±1.0 ±1.0 ±1.0 ±1.0 ±0.5 approx (g)
High CV-value Long Life > 10 years at 50 C Low ESR and ESL High stability, 10 years shelf life Optimized designs available on request RoHS Compliant application Basic design Smoothing, energy storage,
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile