IXBH42N170 IXBT42N170

Transcript

1 High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25 C to 15 C, R GE = 1MΩ 17 V V GES Continuous ± 2 V V GEM Transient ± 3 V G C E C (TAB) 25 = 25 C 8 A I LRMS Terminal Current Limit 75 A 9 = 9 C 42 A TO-268 (IXBT) M = 25 C, 1ms 3 A SSOA V GE = 15V, T VJ = 125 C, R G = 1Ω M = 1 A (RBSOA) Clamped inductive load S 135 V P C = 25 C 36 W G E C (TAB) C M 15 C T stg C T L 1.6mm (.62 in.) from case for 1s 3 C T SOLD Plastic body for 1 seconds 26 C M d Mounting torque (TO-247) 1.13/1 Nm/lb.in. Weight TO g TO g Symbol Test Conditions Characteristic Values ( BS = 25μA, V GE = V 17 V V GE(th) = 25μA, = V GE V ES =.8 S 5 μa V GE = V = 125 C 1.5 ma I GES = V, V GE = ± 2V ±1 na G = Gate C = Collector E = Emitter TAB = Collector Features High blocking voltage International standard packages Low conduction losses Advantages Low gate drive requirement High power density Applications: Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches (sat) = 15V, Note V = 125 C 2.7 V 28 IXYS CORPORATION, All rights reserved DS9871C(1/8)

2 Symbol Test Conditions Characteristic Values ( g fs = 42A, = 1V, Note S C ies 399 pf C oes = 25V, V GE = V, f = 1MHz 225 pf C res 7 pf Q g 188 nc Q ge = 15V, =.5 S 29 nc Q gc 76 nc 37 ns Resistive Switching times, = 25 C t r 139 ns I t C = 15V d(off) 34 ns V t CE = 85V, R G = 1Ω f 665 ns 36 ns t r Resistive Switching times, = 125 C 188 ns = 15V 33 ns t f = 85V, R G = 1Ω 74 ns R thjc.35 C/W R thcs (TO-247).25 C/W TO-247 (IXBH) Outline IXBH42N17 IXBT42N17 Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e L L P Q R S 6.15 BSC 242 BSC e P Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Reverse Diode TO-268 (IXBT) Outline Symbol Test Conditions Characteristic Values ( V F I F = V 2.8 V t I rr F = 21A, V GE = V, -di F /dt = 1A/μs 1.32 μs I V RM R = 1V 36 A Note 1: Pulse test, t 3μs, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537

3 IXBH42N17 IXBT42N17 Fig. 1. Output 25ºC Fig. 2. Extended Output 25ºC V Fig. 3. Output 125ºC Fig. 4. Dependence of (sat) on Junction Temperature V VCE(sat) - Normalized = 84A = 42A = 21A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance VCE - Volts A = 84A = 25ºC = - 4ºC 25ºC 125ºC A V GE - Volts V GE - Volts 28 IXYS CORPORATION, All rights reserved IXYS REF: B_42N17(7N)1-7-8

4 IXBH42N17 IXBT42N17 g f s - Siemens Fig. 7. Transconductance 55 = - 4ºC ºC ºC Amperes IF - Amperes Fig. 8. Forward Voltage Drop of Intrinsic Diode V F - Volts = 25ºC = 125ºC 16 Fig. 9. Gate Charge 1, Fig. 1. Capacitance VGE - Volts = 85V = 42A I G = 1mA Capacitance - PicoFarads 1, 1 C ies C oes C res 2 f = 1 MHz Q G - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance Z(th)JC - ºC / W = 125ºC R G = 1Ω dv / dt < 1V / ns Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions.

5 IXBH42N17 IXBT42N17 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current t r R G = 1Ω = 85V = 84A = 42A t r R G = 1Ω = 85V = 125ºC = 25ºC Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature t r t r = 125ºC, = 85V = 84A t f t f R G = 1Ω, = 85V = 42A = 42A 4 4 = 84A R G - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f t f R G = 1Ω, = 85V = 25ºC, 125ºC t f t f = 125ºC, = 85V = 42A = 84A Amperes R G - Ohms 28 IXYS CORPORATION, All rights reserved IXYS REF: B_42N17(7N)1-7-8