3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
|
|
- Σπυριδούλα Βυζάντιος
- 5 χρόνια πριν
- Προβολές:
Transcript
1 V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC7T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with ft approaching GHz. This device is suitable as a buffer amplifier for cellular and cordless telephone applications. Operating on a volt supply (. volt minimum) this IC is ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = C, ZL = ZS = Ω). The gain at fu is db down from the gain at MHz. Gain, GS (db) NOISE FIGURE AND GAIN vs. FREQUENCY VCC =. V, ICC = 7. ma NF GS PART NUMBER UPC7T PACKAGE OUTLINE TO SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) VCC =. V ma. 7.. VCC = ma. GS Small Signal Gain, f = MHz, VCC =. V db 9 f = MHz, VCC =. V db. f = MHz, VCC = db fu Upper Limit Operating Frequency, VCC =. V GHz.. VCC = GHz. PSAT Saturated Output Power, f = MHz, VCC =. V dbm - f = MHz, VCC =. V dbm - f = MHz, VCC = dbm - NF Noise Figure, f = MHz, VCC =. V db.. f = MHz, VCC =. V db. f = MHz, VCC = db. RLIN Input Return Loss, f = MHz, VCC =. V db f = MHz, VCC =. V db f = MHz, VCC = db RLOUT Output Return Loss, f = MHz, VCC =. V db.. f = MHz, VCC =. V db. f = MHz, VCC = db 9. ISOL Isolation, f = MHz, VCC =. V db f = MHz, VCC =. V db f = MHz, VCC = db 7 OIP SSB Output Third Order Intercept, f = MHz, f = MHz, VCC =. V dbm + f = MHz, f = MHz, VCC =. V dbm + f = MHz, f = MHz, VCC = dbm - RTH (J-A) Thermal Resistance (Junction to Ambient) Free Air C/W Mounted on a x x. mm epoxy glass PWB C/W.... Noise Figure, NF (db) California Eastern Laboratories
2 UPC7T ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V. ICC Total Supply Current ma RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX VCC Supply Voltage V.. TOP Operating Temperature C - PIN Input Power dbm PT Total Power Dissipation mw TOP Operating Temperature C - to + TSTG Storage Temperature C - to + Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a x x. mm epoxy glass PWB (TA = C). TEST CIRCUIT pf VCC Ω IN Ω OUT pf,, pf TYPICAL PERFORMANCE CURVES (TA = C) CIRCUIT CURRENT vs. VOLTAGE CIRCUIT CURRENT vs. TEMPERATURE Gain, GS(dB) Circuit Current, ICC (ma) + C VCC =. V ICC = 7. ma Supply Voltage VCC (V) GAIN vs. FREQUENCY AND TEMPERATURE + C - C Circuit Current, ICC (ma) Insertion Power Gain, GP (db) VCC =. V Gp NF Operating Temperature TOP ( C) GAIN AND NOISE FIGURE vs. FREQUENCY VCC =.7 V VCC =. V.7 V --. V. V 7 Noise Figure, NF (db).... Frequency, f (GHz)
3 UPC7T TYPICAL PERFORMANCE CURVES (TA = C) RETURN LOSS vs. FREQUENCY VCC =. V ISOLATION vs. FREQUENCY Input Return Loss, RLIN (db) Output Return Loss, RLOUT (db) - - RLout RLin VCC =. V. V Isolation ISOL (db) VCC =. V Frequency, f (GHZ) Frequency, f (GHZ) POWER vs. FREQUENCY POWER vs. FREQUENCY VCC =. V ICC = 7. ma PSAT PdB VCC = ICC =. ma Psat PdB OUTPUT POWER vs. INPUT POWER AND VOLTAGE f = MHZ VCC =. V. V OUTPUT POWER vs. INPUT POWER AND TEMPERATURE f = MHZ VCC =. V TA = + C V C + C + C - C + C Input Power, PIN (dbm) Input Power, PIN (dbm)
4 UPC7T TYPICAL SCATTERING PARAMETERS (TA = C) VCC =. V, ICC = 7. ma FREQUENCY S S S S K S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCC =, ICC =. ma FREQUENCY S S S S K S GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) K Factor Calculation: K = + - S - S S S, = S S - S S
5 UPC7T OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS PACKAGE OUTLINE T (Top View) (Bottom View).9± CR.9± ± INPUT.. GND. GND. OUTPUT. GND. VCC to. All dimensions are typical unless otherwise specified. EQUIVALENT CIRCUIT RECOMMENDED P.C.B. LAYOUT (Units in mm) VCC OUT. IN.9 ORDERING INFORMATION PART NUMBER QTY. MIN UPC7T-E K/Reel Embossed Tape, mm wide.. MIN. MIN EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-7 () 9- Telex -9/FAX () 9-79 DATA SUBJECT TO CHANGE WITHOUT NOTICE
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
Διαβάστε περισσότερα3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
Διαβάστε περισσότερα2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
Διαβάστε περισσότεραNPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
Διαβάστε περισσότεραPRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
Διαβάστε περισσότεραSURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
Διαβάστε περισσότεραNPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
Διαβάστε περισσότεραPRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE
Διαβάστε περισσότεραAT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
Διαβάστε περισσότεραNPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
Διαβάστε περισσότεραElectrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
Διαβάστε περισσότεραNEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
Διαβάστε περισσότεραHigh Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
Διαβάστε περισσότεραVGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
Διαβάστε περισσότεραMAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
Διαβάστε περισσότεραSURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
Διαβάστε περισσότεραAgilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
Διαβάστε περισσότεραAT Low Current, High Performance NPN Silicon Bipolar Transistor
AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are
Διαβάστε περισσότερα4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625
4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features 4.8 Volt Operation +28. dbm P out @ 9 MHz, Typ. 7% Collector Efficiency @ 9 MHz, Typ. 9 db Power Gain @ 9 MHz, Typ.
Διαβάστε περισσότεραMZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
Διαβάστε περισσότερα4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW
Διαβάστε περισσότεραDISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
Διαβάστε περισσότεραFeatures. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Διαβάστε περισσότεραABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
Διαβάστε περισσότεραABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
Διαβάστε περισσότεραMAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
Διαβάστε περισσότερα1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
Διαβάστε περισσότεραPI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
Διαβάστε περισσότεραMZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
Διαβάστε περισσότεραNPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors
Διαβάστε περισσότερα500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
Διαβάστε περισσότεραNE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db
Διαβάστε περισσότεραTransient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
Διαβάστε περισσότεραYAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Διαβάστε περισσότεραHIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Διαβάστε περισσότεραThe following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE68 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION
Διαβάστε περισσότεραNPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
Διαβάστε περισσότερα0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
Διαβάστε περισσότεραHigh Power Amp BMT321. Application Note
RF MMIC Innovator www.berex.com [Classification] Application Note [Date] 2015.11 [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_Agilent N5182A
Διαβάστε περισσότεραSAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-55 Date : 15 h Nov. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότεραPolymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
Διαβάστε περισσότεραMultilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Διαβάστε περισσότεραRating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
Διαβάστε περισσότεραSERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. RD04HMS2 single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-51-B Date : 3 th Sep. 21 Rev. date : 7 th Feb. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI
Διαβάστε περισσότερα2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
Διαβάστε περισσότεραDATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
Διαβάστε περισσότεραISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Διαβάστε περισσότεραNPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR NE86 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 7 GHz LOW NOISE FIGURE:. db at GHz HIGH COLLECTOR CURRENT: 00 ma HIGH RELIABILITY METALLIZATION LOW COST B E
Διαβάστε περισσότεραNTC thermistors for temperature measurement
NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: Date: June 2008 EPCOS AG 2008. Reproduction, publication and dissemination of
Διαβάστε περισσότερα5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529
FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output
Διαβάστε περισσότεραPOWER OVER ETHERNET (PoE) MAGNETICS
RoHS-5 peak reflow temperature rating 35 C RoHS-6 peak reflow temperature rating 45 C IEEE 80.3af/ANSI X3.63 compliant performance Designed for IP phone or switch applications Electrical Specifications
Διαβάστε περισσότεραGenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
Διαβάστε περισσότεραISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Διαβάστε περισσότεραPRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
Διαβάστε περισσότεραCSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
Διαβάστε περισσότεραSunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Διαβάστε περισσότεραB37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
Διαβάστε περισσότεραRF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
Διαβάστε περισσότερα! " # $ &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 #! - (#* 2 3( 4* 2 (* 2 5!! 3 ( * (7 4* 2 #8 (# * 9 : (* 9
"# " # $ "%%" & '" (' )' * & + (' )' * &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 # - (#* 2 # - (#* 2 3( 4* 2 (* 2 5 3 ( * 2 6 3 (7 4* 2 #8 (# * 9 : (* 9 #" " 5,1 < = " = #+ +# 9 ' :> # &? + # & ISD i " @
Διαβάστε περισσότεραMetal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
Διαβάστε περισσότεραMonolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Διαβάστε περισσότεραBluetooth / WLAN / WiFi Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25/6.25 mm. Pulse Part Number W3008, W3008C
W8 Datasheet version.7. ceramic antenna. (/) Ground cleared under antenna, clearance area 4. x 4.5/6.5 mm. Pulse Part Number W8, W8C Features - Omni directional radiation - Low profile - Compact size W
Διαβάστε περισσότεραSMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
Διαβάστε περισσότεραCSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Διαβάστε περισσότεραFirst Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
Διαβάστε περισσότεραHigh Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Διαβάστε περισσότεραChip Ferrite Bead MCB-S/B Series
Chip Ferrite Bead MCB-S/B Series Features Monolithic inorganic material construction Closed magnetic circuit avoids crosstalk SMD Type & suitable for reflow and wave soldering Available in various sizes
Διαβάστε περισσότεραPolymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
Διαβάστε περισσότεραCeramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Διαβάστε περισσότεραPrepolarized Microphones-Free Field
Prepolarized Microphones-Free Field MP0 / MP3 / MP / MP / MP / MP / MP8 MP0 MP3 MP MP MP MP MP8 Standards (IEC7) I I I.3 ~ 0k 3 ~ 0k 0 ~.k 0 ~.k 0 ~ 70k 0 ~ k 0 ~ k Open-circuit Sensitivity (mv/pa) (±db)
Διαβάστε περισσότεραPolymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
Διαβάστε περισσότεραSunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Διαβάστε περισσότεραIXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
Διαβάστε περισσότεραHigh Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
Διαβάστε περισσότεραSMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
Διαβάστε περισσότεραMAX3970 MAX3970. Maxim Integrated Products ; Rev 1; 10/01 3.3V SUPPLY FILTERING V CC 1 V CC 2 3.3V FILTER R F.
19-197; Rev 1; 1/1 Ω µ + + µ PART TEMP. RANGE PIN-PACKAGE U/D C to +85 C Dice Note: Dice are designed to operate over a C to +11 C junction temperature (T J ) range, but are tested and guaranteed at T
Διαβάστε περισσότεραPLL Synthesizer. Variable Type. Fixed Type (ROM Included)
Excellent Phase Noise Low Spurious ~5V DC Voltage Supply Different Types of Package Available FractionalN & IntegerN PLL IC Custom Design Available PS6 x x 6.5 mm x x.7 mm Ref In Loop Filter CP PD VCO
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-048 Date : 27 th May 11 Prepared : Y.Koashi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότεραSeries AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
Διαβάστε περισσότεραType 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. RD70HUF2 single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-049 Date : 27 th May 2011 Prepared : E.Akiyama K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότεραNTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. Drain Bias. Drain Bias. Gate Bias (RD04HMS2) GND (RD70HUF2) (RD70HUF2) RF IN.
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-122 Date : 28 th Feb. 211 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότεραNTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
Διαβάστε περισσότεραRating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed
Διαβάστε περισσότεραSMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
Διαβάστε περισσότεραNPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
Διαβάστε περισσότεραData sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
Διαβάστε περισσότεραAPPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-112 Date : 27 th May 2011 Prepared : Y.Koashi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
Διαβάστε περισσότεραC4C-C4H-C4G-C4M MKP Series AXIAL CAPACITORS PCB APPLICATIONS
C4C-C4H-C4G-C4M AXIAL CAPACITORS PCB APPLICATIONS General characteristics - Self-Healing - Low losses - High ripple current - High contact reliability - Suitable for high frequency applications 40 ±5 L
Διαβάστε περισσότερα! "!##! $ %! & '% * &! & > ::: <? > 1"+ > &/< >! > ISD
!"#! "!##! $! & ' ( ) $ * & ' ( ) $ + + ') $, ' ) $,- '). /"/ &&! 0 ' ). 1"+ '). ' ). " ' ). # * '* ).! ' 0).! ' ) 3 4 - '5 6) 3 - & '7/) 3 4 '05 ) 3 && & '4 4) 8 8 9 : ; &&!! 9 ; -& 9 $;0& 9. ; &&!! 9
Διαβάστε περισσότεραCeramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Διαβάστε περισσότεραIXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
Διαβάστε περισσότεραNo Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
Διαβάστε περισσότεραAluminum Capacitors C, Tubular, Radial Lead
Aluminum Capacitors + 105 C, Tubular, Radial Lead FEATURES Wide temperature range Radial design in two and three lead configuration Ideal SMPS output filter PERFORMANCE CHARACTERISTICS Operating Temperature:
Διαβάστε περισσότεραMetal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
Διαβάστε περισσότεραCurrent Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Διαβάστε περισσότεραGENERAL PURPOSE TRANSFORMERS 2 Watt Pulse, Electrostatically Shielded, 500 mw Pulse, RF Pulse, and Control Transformers
Watt Pulse, Electrostatically Shielded, 00 mw Pulse, RF Pulse, and Control Transformers Wide range of inductors and turns ratios Suitable for a variety of applications High flux density capability Available
Διαβάστε περισσότερα