Optimized Design of Fully Integrated VCO on Si Based Process
|
|
|
- Πηνελόπεια Βλαβιανός
- 6 χρόνια πριν
- Προβολές:
Transcript
1 LSI VCO Optimized Desin of Fully Interated VCO on Si Based Proess Nobuyuki Itoh Semiondutor Company, Toshiba Corporation , Kasama, Sakae-ku, Yokohama, , Japan Tel: , Fax: , VCO VCO VCO Abstrat This paper has desribed optimized desin methodoloy of fully interated VCO by several ain-ell topoloy viewpoints on phase noise usin Si based proess. Due to many andidate VCO was suitable at offset frequeny of far from arrier; VCO was suitable at that of viinity of arrier. Also to improve phase noise dependene on osillation frequeny of fully interated VCO, it was shown the osillation amplitude inreasin in lower osillation frequeny was one of the effetive methods. 1. LNA Low Noise Amplifier [1] MIX Mixer IF-AMP IF amplifier MIX Voltae Controlled Osillator PLL Phase Loked Loop
2 LO Loal Osillator 1 1(a) Si LO D LNA MIX VCO Si UDn VCO Si 1 Si Si VCO [] Si VCO. VCO VCO LO LO 5 (1). (). (3). (4). (5). VCO VCO (1). IF -1. VCO LO LO 1(b) 1(a) LO D LO IF IF-D IF IF-UDn IF IF LO 1(b) LOn UDn
3 -. VCO 1 VCO (1) Lesson % [3] kt F 1 ω os ω + L( ω + m ) 1 1 (1) Pos Q ω m ω m k T F P os Q Q ω os VCO ω m VCO ω os (1) () (1) Q () +/-10% (3) (4) 10% (5) VCO ind Q ωl () RS +/-10% ( ) Lind Rne ω R Q (3) S RS -3. F VCO ( 1 + A) R ne (4) kt Rs 1+ A ω os ω + L( ωm) 1 (5) Vos PA ωm ωm ON/OFF (5) R s /V os VCO 3-. VCO (1) VCO Q ( )
4 Q Lind Q sr (9) 3 Q Rs C p 3 Q Q Q Q Q (a) (b) () Q r Q (6) (7) 4 [4] Rsub.1k ind Qr ωl (6) R S Q 10 Standard 5th Metal (Cp-65fF) 1 (7) ω L C Q ind p 5 ω sr Q sr (8) (9) R ω sr (8) 3 L s indc p Metal thikness1um Frequeny [GHz] Ω Qtot Qr Q Qtot Frequeny [MHz] 3-3. VCO /Bi VCO /Bi /Bi 18 (1) ()pnp
5 (3) PMOS Rs m A ne A (11) 5 ( ωl ) ind m /I MOSFET m /I d (1) (13) m 1 39 (1) I V T I m d V V ( V V 50mV ) s s th th 8 (13) 5(a) (b) NMOS () PMOS (d) (e) R s LC m MOSFET LC L VCO K (14) 5 (a) (d) 500MHz VCO [5] ω m >>ω (5) (10) ( 1+ A) kt Rs ω ( ) os L ω m (10) Vos ωm m (1) (13) m 5 VCO R s /V os R s 4 VCO L K (14) ind R s (11) (14) (15) m R A s A s 1 ( ωkr ) ( ωk ) Rs (15) A ω K m m (16)
6 R 4 (16) R NMOS + PMOS NMOS PMOS (16) (17) 31.6% 31.4% 600kHz [db/hz] 3MHz (17) [ma] NMOS PMOS (1) (13) m /I (18) (17) (18) 66% (10) (19) (19) I NMOS I d 39 8 (18) I d NMOS % (19) I f550mhz [MHz] mA 3.9mA (a) (e) 100MHz VCO Phase Noise [db/hz] Offset Frequeny [Hz] Output reffered urrent noise [A/Hz] SiGe- NMOS 61% VCO 6 (1) (5) Frequeny [Hz]
7 MOSFET 8 8 1MHz -14.0dB/Hz 7 NMOS dB/Hz VCO NMOS 10kHz SiGe 9dB -80.3dB/Hz 8 NMOS -78.3dB/Hz (5) (0).5mA L L V R V R ( ωm) V ( ωm) kt R o o ( ω + ω ) m ( ω + ω ) m kt R o V, o, ( 1+ A) ( 1+ A) ω ω os 1 ω + m ωm ω ω os 1 ω + m ωm, (0), 3-4 V o /V o 8 ω NMOS /ω, ω /ω, 8 ω m ω, (0) (1) L L R ( ω m) 4 ( ωm) R 1 ( 1+ 8) ω ( 1+ 1), ω, 9R 8R (1) 1 5.8mA (16) (17) (19) Rs Phase Noise [db/hz] () I NMOS 39 R d 39 () [MHz] I 8 R 8 4.4% 5.6% (1) () (3) 10kHz [db/hz] 1MHz [ma] I R d (3) I Rs, VCO VCO 3- Q VCO Offset Frequeny [Hz]
8 Q 1GHz Q5 10 Q30 5() LC PMOS 450MHz VCO (1) P os 9 LC VCO VCO 11% VCO 3-4 ω os [6] VCO VCO 15 0dB -60 VCO ω os ω os 10 Phase noise [db/hz] Offset frequeny [Hz] VCO VCO Q VCO VCO VCO 3.mA 3-7. VCO
![ω os -15 LC -130 [7] -135-140 [8] 11 Phase noise at 3MHz offset [db/hz] VCC3V L(3M),sim(turbo) L(3M),sim(wo turbo) L(3M),meas(turbo) -145 0.5 1 1.5.5 3 Vtrl [V] VCO F.](/docs-images/89/98721835/images/9-0.jpg "O.M. Fiure of Merit (3) L( ωm ) ωm VCO FOM ( Current) (3) I VCO ωos 13 1999 4. VCO FOM 1 VCO (3) FOM VCO (1) VCO [9] 3V VCO FOM Current")
9 ω os -15 LC -130 [7] [8] 11 Phase noise at 3MHz offset [db/hz] VCC3V L(3M),sim(turbo) L(3M),sim(wo turbo) L(3M),meas(turbo) Vtrl [V] VCO F.O.M. Fiure of Merit (3) L( ωm ) ωm VCO FOM ( Current) (3) I VCO ωos VCO FOM 1 VCO (3) FOM VCO (1) VCO [9] 3V VCO FOM Current
10 FOM(Current) [db] Tunin Rane [%] 5. VCO (ESSCIRC001), Villah, Austria, pp , September,001 [6] B. DeMuer, et al., A -GHz Low-Phase-Noise VCO Solid-State Ciruit vol. 35, No. 7, /3 pp , July, 000. [7] E. Heazi, et al., A Filterin Tehnique to VCO (ISSCC00), San Franiso, February 000. [] J. Crol et al., An Analytial Model of Planner Indutors on Lowly Doped Silion Substrates for Hih Frequeny Analo Desin up to 3 GHz, Pro. The tehnial Diest of IEEE VLSI Ciruit Symposiu June, [3] D. B. Lesson, A simple model of feedbak osillator noise spetru Pro. IEEE, vol. 54, pp39-330, February, [4] N.Itoh, "Low Power, Low Phase Noise Interated RF-VCO on Silion Proes" 00 Asia-Paifi Mirowave Conferene Workshop Diest, pp19-8, Kyoto, Japan, Nov. 00. [5] N.Itoh, et al., "Interated LC-tuned VCO in Bi proes" Pro. of the 7th 001 European Solid-State Ciruits Conferene Interated LC-VCO Set with Fliker Noise Uponversion Minimization, IEEE Journal of Lower LC Osillator Phase Noise, IEEE /5 Journal of Solid-State Ciruit vol. 36, No. 1, pp , Deember, 001. [8] N.Itoh, et al., "100-MHz Fully Interated VCO with Turbo-Charer Tehnique," IEICE Transation of Eletroni vol. E85-C, No.8, pp , Auust, 00. [9] RF ISBN [1] M.Steyaert, et al., A Volt Cellular Transeiver Front-End, The 000 IEEE International Solid-State Ciruits Conferene
2
>? LC? >? CMOS?, >> > > >> - >> ebrahimi_emyahoo.com, nasehum.ac.ir ? > ()? LC? >? > .> > CMOS? > >? >.> >??? > >? > > > >? >. >> >? 0/5 E? >.>> > >?? >.> > > > >>> >.>??.?
Razor. [1], [2] (typical) LSI V/F. Razor. (Timing Fault: TF) [7] Razor [3], [4], [5] DVFS - Dynamic Voltage and Frequency Scaling [6]
![Razor. [1], [2] (typical) LSI V/F. Razor. (Timing Fault: TF) [7] Razor [3], [4], [5] DVFS - Dynamic Voltage and Frequency Scaling [6]](/thumbs/103/161217973.jpg "Razor. [1], [2] (typical) LSI V/F. Razor. (Timing Fault: TF) [7] Razor [3], [4], [5] DVFS - Dynamic Voltage and Frequency Scaling [6]")
,a),.,.,.,,,,.,. [], [] (typial) LSI (Timing Fault: TF) TF Razor [], [], [] DVFS - Dynami Voltage an Frequeny Saling [] TF (V) (F) TF TF Grauate Shool of Information Siene an Tehnology, The University
SCOPE OF ACCREDITATION TO ISO 17025:2005
SCOPE OF ACCREDITATION TO ISO 17025:2005 TFF CORPORATION TEKTRONIX COMPANY 1-14-1 Midorigaoka, Naka-gun, Ninomiya-machi, Kanagawa Pref. 259-0132 JAPAN Hideki Yuyama Phone: 81 463 70 5634 CALIBRATION Valid
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
PLL Synthesizer. Variable Type. Fixed Type (ROM Included)
Excellent Phase Noise Low Spurious ~5V DC Voltage Supply Different Types of Package Available FractionalN & IntegerN PLL IC Custom Design Available PS6 x x 6.5 mm x x.7 mm Ref In Loop Filter CP PD VCO
Design and Fabrication of Water Heater with Electromagnetic Induction Heating
U Kamphaengsean Acad. J. Vol. 7, No. 2, 2009, Pages 48-60 ก 7 2 2552 ก ก กก ก Design and Fabrication of Water Heater with Electromagnetic Induction Heating 1* Geerapong Srivichai 1* ABSTRACT The purpose
f RF f LO f RF ±f LO Ιδανικός μείκτης RF Είσοδος f RF f RF ± f LO IF Έξοδος f LO LO Είσοδος f RF f LO (ω RF t) (ω LO t) = 1 2 [(ω RF + ω LO )t + (ω RF ω LO )t] RF LO IF f RF ± f LO 0 180 +1 RF IF 1 LO
Creative TEchnology Provider
1 Oil pplication Capacitors are intended for the improvement of Power Factor in low voltage power networks. Used advanced technology consists of metallized PP film with extremely low loss factor and dielectric
Research on mode-locked optical fiber laser
2003 6 20 Research on mode-locked optical fiber laser 1 36303 Abstract- For future ultrahigh-speed optical communications, an ultrashort optical pulse train at a high repetitionrate will be indispensable.
«ΜΕΛΕΤΗ ΚΑΙ ΚΑΤΑΣΚΕΥΗ ΡΑΔΙΟΦΩΝΙΚΟΥ ΣΤΑΘΜΟΥ AM ΜΕ ΤΡΑΝΖΙΣΤΟΡ»
ΤΕΧΝΟΛΟΓΙΚΟ ΕΚΠΑΙΔΕΥΤΙΚΟ ΙΔΡΥΜΑ ΙΟΝΙΩΝ ΝΗΣΩΝ ΣΧΟΛΗ ΜΟΥΣΙΚΗΣ ΤΕΧΝΟΛΟΓΙΑΣ ΤΜΗΜΑ ΤΕΧΝΟΛΟΓΙΑΣ ΗΧΟΥ ΚΑΙ ΜΟΥΣΙΚΩΝ ΟΡΓΑΝΩΝ «ΜΕΛΕΤΗ ΚΑΙ ΚΑΤΑΣΚΕΥΗ ΡΑΔΙΟΦΩΝΙΚΟΥ ΣΤΑΘΜΟΥ AM ΜΕ ΤΡΑΝΖΙΣΤΟΡ» ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ ΕΥΡΙΠΙ
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
3: A convolution-pooling layer in PS-CNN 1: Partially Shared Deep Neural Network 2.2 Partially Shared Convolutional Neural Network 2: A hidden layer o
Sound Source Identification based on Deep Learning with Partially-Shared Architecture 1 2 1 1,3 Takayuki MORITO 1, Osamu SUGIYAMA 2, Ryosuke KOJIMA 1, Kazuhiro NAKADAI 1,3 1 2 ( ) 3 Tokyo Institute of
Τρανζίστορ Επίδρασης Πεδίου Field-effect transistors (FET)
Τρανζίστορ Επίδρασης Πεδίου Field-effect transistors (FET) Χρησιµοποιούνται σε κλίµακα υψηλής ολοκλήρωσης VLSI Χρησιµοποιούνται και σε αναλογικούς ενισχυτές καθώς και στο στάδιο εξόδου ενισχυτών Ισχύος-
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
Second Order RLC Filters
ECEN 60 Circuits/Electronics Spring 007-0-07 P. Mathys Second Order RLC Filters RLC Lowpass Filter A passive RLC lowpass filter (LPF) circuit is shown in the following schematic. R L C v O (t) Using phasor
ΕΛΕΓΧΟΣ ΤΩΝ ΠΑΡΑΜΟΡΦΩΣΕΩΝ ΧΑΛΥΒ ΙΝΩΝ ΦΟΡΕΩΝ ΜΕΓΑΛΟΥ ΑΝΟΙΓΜΑΤΟΣ ΤΥΠΟΥ MBSN ΜΕ ΤΗ ΧΡΗΣΗ ΚΑΛΩ ΙΩΝ: ΠΡΟΤΑΣΗ ΕΦΑΡΜΟΓΗΣ ΣΕ ΑΝΟΙΚΤΟ ΣΤΕΓΑΣΤΡΟ
ΕΛΕΓΧΟΣ ΤΩΝ ΠΑΡΑΜΟΡΦΩΣΕΩΝ ΧΑΛΥΒ ΙΝΩΝ ΦΟΡΕΩΝ ΜΕΓΑΛΟΥ ΑΝΟΙΓΜΑΤΟΣ ΤΥΠΟΥ MBSN ΜΕ ΤΗ ΧΡΗΣΗ ΚΑΛΩ ΙΩΝ: ΠΡΟΤΑΣΗ ΕΦΑΡΜΟΓΗΣ ΣΕ ΑΝΟΙΚΤΟ ΣΤΕΓΑΣΤΡΟ Νικόλαος Αντωνίου Πολιτικός Μηχανικός Τµήµα Πολιτικών Μηχανικών, Α.Π.Θ.,
ΣΥΣΤΗΜΑ ΑΣΥΡΜΑΤΗΣ ΜΕΤΑ ΟΣΗΣ Ε ΟΜΕΝΩΝ
ΤΕΧΝΙΚΟ ΕΠΙΜΕΛΗΤΗΡΙΟ ΕΛΛΑ ΑΣ, ΣΕΠΤΕΜΒΡΙΟΣ 000 ΣΥΣΤΗΜΑ ΑΣΥΡΜΑΤΗΣ ΜΕΤΑ ΟΣΗΣ Ε ΟΜΕΝΩΝ Φ. Πλέσσας, Α. Μιαουδάκης, Γρ. Καλύβας, Κ. Ευσταθίου Πανεπιστήµιο Πατρών, Τµήµα Ηλεκτρολόγων Μηχανικών και Τεχνολογίας
Potential Dividers. 46 minutes. 46 marks. Page 1 of 11
Potential Dividers 46 minutes 46 marks Page 1 of 11 Q1. In the circuit shown in the figure below, the battery, of negligible internal resistance, has an emf of 30 V. The pd across the lamp is 6.0 V and
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
Aspects of High-Frequency Modelling with EKV3
ESSCIRC/ESSDERC Workshops, MOS-AK Meeting Edinburgh, September 15-19, 2008 Aspects of High-Frequency Modelling with EKV3 Matthias Bucher, Maria-Anna Chalkiadaki Technical University of Crete (TUC), Chania,
Development of the Nursing Program for Rehabilitation of Woman Diagnosed with Breast Cancer
Development of the Nursing Program for Rehabilitation of Woman Diagnosed with Breast Cancer Naomi Morota Newman M Key Words woman diagnosed with breast cancer, rehabilitation nursing care program, the
Standard Calibrations, Inc. Address 681 Anita Street, Suite 103 Chula Vista, CA Contact Name
IAS Accreditation Number CL-121 Accredited Entity Address 681 Anita Street, Suite 103 Chula Vista, CA 91911 Contact Name Louis Ruggeri Metrology Director Telephone (619) 477-1668 Effective Date of Scope
Διπλωματική Εργασία του φοιτητή του Τμήματος Ηλεκτρολόγων Μηχανικών και Τεχνολογίας Υπολογιστών της Πολυτεχνικής Σχολής του Πανεπιστημίου Πατρών
ΠΑΝΕΠΙΣΤΗΜΙΟ ΠΑΤΡΩΝ ΤΜΗΜΑ ΗΛΕΚΤΡΟΛΟΓΩΝ ΜΗΧΑΝΙΚΩΝ ΚΑΙ ΤΕΧΝΟΛΟΓΙΑΣ ΥΠΟΛΟΓΙΣΤΩΝ ΤΟΜΕΑΣ:ΗΛΕΚΤΡΟΝΙΚΗΣ ΚΑΙ ΥΠΟΛΟΓΙΣΤΩΝ ΕΡΓΑΣΤΗΡΙΟ ΗΛΕΚΤΡΟΝΙΚΩΝ ΕΦΑΡΜΟΓΩΝ Διπλωματική Εργασία του φοιτητή του Τμήματος Ηλεκτρολόγων
RT-178 / ARC-27 All schematics
RT / ARC All schematics J I K P0 L A B M C P N D O E H G F P0 RT /ARC F L P0 A C D G J M P S B E K R H N SQ OFF GUARD REC MOD I k I B E i DRVR I g FINAL I g I ant SQ OFF MAIN REC SENS PHONE METER MIC SENS
GF GF 3 1,2) KP PP KP Photo 1 GF PP GF PP 3) KP ULultra-light 2.KP 2.1KP KP Fig. 1 PET GF PP 4) 2.2KP KP GF 2 3 KP Olefin film Stampable sheet
JFE No. 4 20045 p 82 Composite Material for Automotive Headliners Expandable Stampable Sheet with Light Weight and High Stiffness A JFE SUZU JFE HA KP 50 mass 30 UL 800 g/m 2 7.2 N/mm Abstract: KP-Sheet
Εισαγωγή στη Σχεδίαση RF Κυκλωμάτων
Εισαγωγή στη Σχεδίαση RF Κυκλωμάτων Αρχιτεκτονικές Πομποδεκτών 1/20 Βασικά κριτήρια επιλογής πομποδεκτών Σήμα εκπομπής (κανάλι εκπομπής) PA BPF Γειτονικά κανάλια Πολυπλοκότητα, κόστος, κατανάλωση, αριθμός
38 Te(OH) 6 2NH 4 H 2 PO 4 (NH 4 ) 2 HPO 4
Fig. A-1-1. Te(OH) NH H PO (NH ) HPO (TAAP). Projection of the crystal structure along the b direction [Ave]. 9 1. 7.5 ( a a )/ a [1 ] ( b b )/ b [1 ] 5..5 1.5 1 1.5 ( c c )/ c [1 ].5 1. 1.5. Angle β 1.
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
HIGH CURRENT POWER INDUCTORS / AMPI ED Type Series
ARLITECH ELECTRONIC CORP. TEL:886-2-2999-8313 FAX:886-2-2995-7520 E-mail:sales@arlitech.com.tw HIGH CURRENT POWER INDUCTORS / AMPI ED Type Series Features High performance realized by metal core Compact
ΜΕΛΕΤΗ ΚΑΙ ΠΡΟΣΟΜΟΙΩΣΗ ΙΑΜΟΡΦΩΣΕΩΝ ΣΕ ΨΗΦΙΑΚΑ ΣΥΣΤΗΜΑΤΑ ΕΠΙΚΟΙΝΩΝΙΩΝ.
Τµήµα Ηλεκτρονικής ΜΕΛΕΤΗ ΚΑΙ ΠΡΟΣΟΜΟΙΩΣΗ ΙΑΜΟΡΦΩΣΕΩΝ ΣΕ ΨΗΦΙΑΚΑ ΣΥΣΤΗΜΑΤΑ ΕΠΙΚΟΙΝΩΝΙΩΝ. Σπουδαστής: Γαρεφαλάκης Ιωσήφ Α.Μ. 3501 Επιβλέπων καθηγητής : Ασκορδαλάκης Παντελής. -Χανιά 2010- ΠΕΡΙΛΗΨΗ : Η παρούσα
Εισαγωγή στη Σχεδίαση Κυκλωμάτων RF
Εισαγωγή στη Σχεδίαση Κυκλωμάτων RF Αρχιτεκτονικές Πομποδεκτών 1/27 Επιλογή συχνότητας IF Υψηλή και χαμηλή συχνότητα IF (2ω IF ) interferer IRF Επιθυμητό κανάλι ω 1 2ω 2ω IF IF ω im 0 ω IF 2/27 interferer
Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης. Επανάληψη μέρος 1 ο. Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών
AO Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης Επανάληψη μέρος 1 ο Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών Άδεια Χρήσης Το παρόν εκπαιδευτικό υλικό υπόκειται σε
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
: Monte Carlo EM 313, Louis (1982) EM, EM Newton-Raphson, /. EM, 2 Monte Carlo EM Newton-Raphson, Monte Carlo EM, Monte Carlo EM, /. 3, Monte Carlo EM
2008 6 Chinese Journal of Applied Probability and Statistics Vol.24 No.3 Jun. 2008 Monte Carlo EM 1,2 ( 1,, 200241; 2,, 310018) EM, E,,. Monte Carlo EM, EM E Monte Carlo,. EM, Monte Carlo EM,,,,. Newton-Raphson.
Vol. 31,No JOURNAL OF CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY Feb
Ξ 31 Vol 31,No 1 2 0 0 1 2 JOURNAL OF CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY Feb 2 0 0 1 :025322778 (2001) 0120016205 (, 230026) : Q ( m 1, m 2,, m n ) k = m 1 + m 2 + + m n - n : Q ( m 1, m 2,, m
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Development of a Tiltmeter with a XY Magnetic Detector (Part +)
No. 2 +0,/,**, Technical Research Report, Earthquake Research Institute, University of Tokyo, No. 2, pp.+0,/,,**,. XY * * ** *** **** ***** Development of a Tiltmeter with a XY Magnetic Detector (Part
Computation Method to Improve Three-phase Voltage Imbalance by Exchange of Single-phase Load Connection
Computation Method to Improve Three-phase Voltage Imbalance by Exchange of Single-phase Load Connection Yasuhiro Hayashi, Member, Junya Matsuki, Member, Masayoshi Ohashi, Student Member, Yasuyuki Tada,Member
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
SCITECH Volume 13, Issue 2 RESEARCH ORGANISATION Published online: March 29, 2018
Journal of rogressive Research in Mathematics(JRM) ISSN: 2395-028 SCITECH Volume 3, Issue 2 RESEARCH ORGANISATION ublished online: March 29, 208 Journal of rogressive Research in Mathematics www.scitecresearch.com/journals
Appendix to On the stability of a compressible axisymmetric rotating flow in a pipe. By Z. Rusak & J. H. Lee
Appendi to On the stability of a compressible aisymmetric rotating flow in a pipe By Z. Rusak & J. H. Lee Journal of Fluid Mechanics, vol. 5 4, pp. 5 4 This material has not been copy-edited or typeset
Rapid Acquisitio n of Doppler Shift in Satellite Co mmunicatio ns
7 3 7 ATA ELETRONIA SINIA Vol. 31 No. 7 July 3 1, 1, (1., 184 ;., 444) :., PN,.,,. : ; ; ; : TN9 : A : 3711 (3) 7155 Rapid Acquisitio of Doppler Shift i Satellite o mmuicatio s HUAN Zhe 1,LU Jiahua 1,YAN
Te chnical Data Catalog
Te chnical Data Catalog 50 khz 1 kw 50 khz AE Power rating: 1 kwrms @ 2% duty cycle 7x28mm (1.13") PZT/L Active Area: 45cm 2 Urethane Window Beamwidth: -3dB: 19-6dB: 27 db: 34 Directivity Index: 18.9 Frequency
Re-Pair n. Re-Pair. Re-Pair. Re-Pair. Re-Pair. (Re-Merge) Re-Merge. Sekine [4, 5, 8] (highly repetitive text) [2] Re-Pair. Blocked-Repair-VF [7]
![Re-Pair n. Re-Pair. Re-Pair. Re-Pair. Re-Pair. (Re-Merge) Re-Merge. Sekine [4, 5, 8] (highly repetitive text) [2] Re-Pair. Blocked-Repair-VF [7]](/thumbs/78/77313882.jpg "Re-Pair n. Re-Pair. Re-Pair. Re-Pair. Re-Pair. (Re-Merge) Re-Merge. Sekine [4, 5, 8] (highly repetitive text) [2] Re-Pair. Blocked-Repair-VF [7]")
Re-Pair 1 1 Re-Pair Re-Pair Re-Pair Re-Pair 1. Larsson Moffat [1] Re-Pair Re-Pair (Re-Pair) ( ) (highly repetitive text) [2] Re-Pair [7] Re-Pair Re-Pair n O(n) O(n) 1 Hokkaido University, Graduate School
Radio Frequency Technologies for Innovative Solutions
Radio Frequency Technologies for Innovative Solutions Selection Guide LDMOS IN PLASTIC HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Radio and Digital Cellular BTS Applications Freq. Pout
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
Te chnical Data Catalog
Te chnical Data Catalog 50 khz 1 kw 50 khz AE Power rating: 1 kwrms @ 2% duty cycle 7x28mm (1.13") PZT/L Active Area: 45cm 2 Urethane Window Beamwidth: -3dB: 19-6dB: 27 db: 34 Directivity Index: 18.9 Frequency
SENSORS Tutorials: November 3, 2013 Conference: November 4-6, Sponsored by the IEEE Sensors Council,
Tutorials: November 3, 2013 Conference: November 4-6, 2013 Sponsored by the IEEE Sensors Council, www.ieee-sensors.org Source: Yole Développement, Inertial Sensors in Mobile Products, 2012 M. Judy, Proc.
the total number of electrons passing through the lamp.
1. A 12 V 36 W lamp is lit to normal brightness using a 12 V car battery of negligible internal resistance. The lamp is switched on for one hour (3600 s). For the time of 1 hour, calculate (i) the energy
0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance
.635mm Pitch Board to Board Docking Connector Lead-Free Compliance MINIDOCK SERIES MINIDOCK SERIES Features Specifications Application.635mm Pitch Connector protected by Diecasted Zinc Alloy Metal Shell
VBA Microsoft Excel. J. Comput. Chem. Jpn., Vol. 5, No. 1, pp (2006)
J. Comput. Chem. Jpn., Vol. 5, No. 1, pp. 29 38 (2006) Microsoft Excel, 184-8588 2-24-16 e-mail: yosimura@cc.tuat.ac.jp (Received: July 28, 2005; Accepted for publication: October 24, 2005; Published on
ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ ΒΑΛΕΝΤΙΝΑ ΠΑΠΑΔΟΠΟΥΛΟΥ Α.Μ.: 09/061. Υπεύθυνος Καθηγητής: Σάββας Μακρίδης
Α.Τ.Ε.Ι. ΙΟΝΙΩΝ ΝΗΣΩΝ ΠΑΡΑΡΤΗΜΑ ΑΡΓΟΣΤΟΛΙΟΥ ΤΜΗΜΑ ΔΗΜΟΣΙΩΝ ΣΧΕΣΕΩΝ ΚΑΙ ΕΠΙΚΟΙΝΩΝΙΑΣ ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ «Η διαμόρφωση επικοινωνιακής στρατηγικής (και των τακτικών ενεργειών) για την ενδυνάμωση της εταιρικής
Problem 7.19 Ignoring reflection at the air soil boundary, if the amplitude of a 3-GHz incident wave is 10 V/m at the surface of a wet soil medium, at what depth will it be down to 1 mv/m? Wet soil is
SCOPE OF ACCREDITATION TO ISO/IEC 17025:2005 & ANSI/NCSL Z540-1-1994 CALIBRATION
SCOPE OF ACCREDITATION TO ISO/IEC 17025:2005 & ANSI/NCSL Z540-1-1994 FLUKE CORPORATION Everett Service Center 1420 75 th Street SW Everett, WA 98203 Randy Lemon Phone: 425 446 5243 CALIBRATION Valid To:
INDEX HOESUNG COIL PARTS
1. Metal Molding High Current SMD Power Inductor PART NO DEMINSION(mm) Inductance Range Rated DC Current Page MMI 06518 SERIES 6.5 7.1 1.8 1.0uH ~ 4.7uH 9.8A ~ 5.0A 5 MMI 06524 SERIES 6.5 7.1 2.4 0.47uH
HIV HIV HIV HIV AIDS 3 :.1 /-,**1 +332
,**1 The Japanese Society for AIDS Research The Journal of AIDS Research +,, +,, +,, + -. / 0 1 +, -. / 0 1 : :,**- +,**. 1..+ - : +** 22 HIV AIDS HIV HIV AIDS : HIV AIDS HIV :HIV AIDS 3 :.1 /-,**1 HIV
Prepolarized Microphones-Free Field
Prepolarized Microphones-Free Field MP0 / MP3 / MP / MP / MP / MP / MP8 MP0 MP3 MP MP MP MP MP8 Standards (IEC7) I I I.3 ~ 0k 3 ~ 0k 0 ~.k 0 ~.k 0 ~ 70k 0 ~ k 0 ~ k Open-circuit Sensitivity (mv/pa) (±db)
Reaction of a Platinum Electrode for the Measurement of Redox Potential of Paddy Soil
J. Jpn. Soc. Soil Phys. No. +*0, p.- +*,**1 Eh * ** Reaction of a Platinum Electrode for the Measurement of Redox Potential of Paddy Soil Daisuke MURAKAMI* and Tatsuaki KASUBUCHI** * The United Graduate
Directly Modulated DFB Laser Module for Wireless Communications
Directly Modulated DFB Laser Module for Wireless Communications Applications Wideband wireless communications High frequency analog transmission DWDM transmission CWDM transmission Product Type: Descriptions
ΕΘΝΙΚΟ ΜΕΤΣΟΒΙΟ ΠΟΛΥΤΕΧΝΕΙΟ ΣΧΟΛΗ ΗΛΕΚΤΡΟΛΟΓΩΝ ΜΗΧΑΝΙΚΩΝ ΚΑΙ ΜΗΧΑΝΙΚΩΝ ΥΠΟΛΟΓΙΣΤΩΝ ΤΟΜΕΑΣ ΗΛΕΚΤΡΙΚΗΣ ΙΣΧΥΟΣ
ΕΘΝΙΚΟ ΜΕΤΣΟΒΙΟ ΠΟΛΥΤΕΧΝΕΙΟ ΣΧΟΛΗ ΗΛΕΚΤΡΟΛΟΓΩΝ ΜΗΧΑΝΙΚΩΝ ΚΑΙ ΜΗΧΑΝΙΚΩΝ ΥΠΟΛΟΓΙΣΤΩΝ ΤΟΜΕΑΣ ΗΛΕΚΤΡΙΚΗΣ ΙΣΧΥΟΣ Προοπτικές Εναρμόνισης της Ελληνικής Αγοράς Ηλεκτρικής Ενέργειας με τις Προδιαγραφές του Μοντέλου
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
Feasible Regions Defined by Stability Constraints Based on the Argument Principle
Feasible Regions Defined by Stability Constraints Based on the Argument Principle Ken KOUNO Masahide ABE Masayuki KAWAMATA Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
Section 8.3 Trigonometric Equations
99 Section 8. Trigonometric Equations Objective 1: Solve Equations Involving One Trigonometric Function. In this section and the next, we will exple how to solving equations involving trigonometric functions.
Conjoint. The Problems of Price Attribute by Conjoint Analysis. Akihiko SHIMAZAKI * Nobuyuki OTAKE
Conjoint Conjoint The Problems of Price Attribute by Conjoint Analysis Akihiko SHIMAZAKI * Nobuyuki OTAKE +, Conjoint - Conjoint. / 0 PSM Price Sensitivity Measurement Conjoint 1 2 + Conjoint Luce and
Retrieval of Seismic Data Recorded on Open-reel-type Magnetic Tapes (MT) by Using Existing Devices
No. 3 + 1,**- Technical Research Report, Earthquake Research Institute, University of Tokyo, No. 3, pp. + 1,,**-. MT * ** *** Retrieval of Seismic Data Recorded on Open-reel-type Magnetic Tapes (MT) by
Copper-catalyzed formal O-H insertion reaction of α-diazo-1,3-dicarb- onyl compounds to carboxylic acids with the assistance of isocyanide
Electronic Supplementary Material (ESI) for ChemComm. This journal is The Royal Society of Chemistry 2014 Copper-catalyzed formal O-H insertion reaction of α-diazo-1,3-dicarb- onyl compounds to carboxylic
Development of a Seismic Data Analysis System for a Short-term Training for Researchers from Developing Countries
No. 2 3+/,**, Technical Research Report, Earthquake Research Institute, University of Tokyo, No. 2, pp.3+/,,**,. * * Development of a Seismic Data Analysis System for a Short-term Training for Researchers
AD8114/AD8115* AD8114/AD8115 SER/PAR D0 D1 D2 D3 D4 A0 A1 A2 A3 CLK DATA OUT DATA IN UPDATE RESET 16 OUTPUT G = +1, G = +2
AD4/AD5* DATA IN UPDATE CE RESET SER/PAR AD4/AD5 D D D2 D3 D4 256 OUTPUT G = +, G = +2 A A A2 A3 DATA OUT AD4/AD5 AD4/AD5 t t 3 t 2 t 4 DATA IN OUT7 (D4) OUT7 (D3) OUT (D) t 5 t 6 = UPDATE = t 7 DATA OUT
* * E mail : matsuto eng.hokudai.ac.jp. Zeiss
400 Vol., No., pp., * * R.... * * Email : matsutoeng.hokudai.ac.jp Zeiss 401 Petts Becker Petts Petts Opaluch Joos. I L T M P TMP MP IM A IP B LM C TMP LM D LM B LM E * LP F * km TMP C TP E * TP G * 402...
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
Παρασκευή, 14 Δεκεμβρίου 12
ΕΙΣΑΓΩΓΗ Οι Δορυφορικές Επικοινωνίες Ορισμοί, Τροχιές, Συχνότητες, Γεωμετρία κάλυψης Βασικές έννοιες: 1.Διαστημικός σταθμός 2.Επίγειος δορυφορικός σταθμός 3.Διαστημική ραδιοεπικοινωνία 4.Διαστημικό σύστημα
ΑΚΑΔΗΜΙΑ ΕΜΠΟΡΙΚΟΥ ΝΑΥΤΙΚΟΥ ΜΑΚΕΔΟΝΙΑΣ ΣΧΟΛΗ ΜΗΧΑΝΙΚΩΝ
: : : NEA 2013 1 : : : (4507) :29-10-2013 2 Περιεχόμενα... 5 ABSTRACT... 6... 7 1:... 8 1.1 :... 8 1.2... 8 1.3... 9 1.4... 10 1.5... 11 1.5.1... 12 1.6... 13 1.6.1... 13 1.6.2 µ... 16 2:... 19 2.1 µ µ...
ΕΘΝΙΚΗ ΥΟΛΗ ΔΗΜΟΙΑ ΔΙΟΙΚΗΗ ΙH ΕΚΠΑΙΔΕΤΣΙΚΗ ΕΙΡΑ ΤΜΗΜΑ ΚΟΙΝΩΝΙΚΗΣ ΔΙΟΙΚΗΣΗΣ ΔΙΟΙΚΗΣΗ ΜΟΝΑΔΩΝ ΥΓΕΙΑΣ ΤΕΛΙΚΗ ΕΡΓΑΣΙΑ
Δ ΕΘΝΙΚΗ ΥΟΛΗ ΔΗΜΟΙΑ ΔΙΟΙΚΗΗ ΙH ΕΚΠΑΙΔΕΤΣΙΚΗ ΕΙΡΑ ΤΜΗΜΑ ΚΟΙΝΩΝΙΚΗΣ ΔΙΟΙΚΗΣΗΣ ΔΙΟΙΚΗΣΗ ΜΟΝΑΔΩΝ ΥΓΕΙΑΣ ΤΕΛΙΚΗ ΕΡΓΑΣΙΑ Θέμα: «Αποκενηρωμένες δομές ζηο ζύζηημα σγείας ηης Ασζηρίας : Μια ζσζηημαηική θεωρηηική
Μάθηµα 3 ο : Το δορυφορικό τηλεπικοινωνιακό υποσύστηµα
Μάθηµα 3 ο : Το δορυφορικό τηλεπικοινωνιακό υποσύστηµα Στόχοι: Στο τέλος αυτού του µαθήµατος ο σπουδαστής θα γνωρίζει: Tη δοµή και τις βασικές λειτουργίες ενός δορυφορικού τηλεπικοινωνιακού υποσυστήµατος
Technical Specifications
FLX-8X8A Chassis Technical Specifications Modular Input Cards... FLX-BI4, FLX-DI4, FLX-HI4, FLX-RI4 Analog Audio... Balanced or Unbalanced Stereo Audio (20 Hz to 20 khz) Supported Outputs Modular Output
WiFi & Satcom FORUM 2009
ΕΘΝΙΚΟ ΜΕΤΣΟΒΙΟ ΠΟΛΥΤΕΧΝΕΙΟ ΣΧΟΛΗ ΗΛΕΚΤΡΟΛΟΓΩΝ ΜΗΧΑΝΙΚΩΝ & ΜΗΧΑΝΙΚΩΝ ΥΠΟΛΟΓΙΣΤΩΝ ΕΡΓΑΣΤΗΡΙΟ ΚΙΝΗΤΩΝ ΡΑΔΙΟΕΠΙΚΟΙΝΩΝΙΩΝ ΕΝΤΑΣΗ ΗΛΕΚΤΡΟΜΑΓΝΗΤΙΚΗΣ ΑΚΤΙΝΟΒΟΛΙΑΣ ΑΠΟ ΕΚΠΟΜΠΕΣ ΑΣΥΡΜΑΤΩΝ ΔΙΚΤΥΩΝ ΠΡΟΣΒΑΣΗΣ Φίλιππος
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 5: Αντιστροφέας CMOS Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών Μηχανικών Τ.Ε. Άδειες Χρήσης
! : ;, - "9 <5 =*<
ITU-R M.473- (00/0)! (TDMA/FDMA) ""# $ %!& ' " ( ) 34 --./ 0, (MSS) * * )! +, 56 78 89 : ;, - "9
ΣΤΟΧΑΣΤΙΚΑ ΣΥΣΤΗΜΑΤΑ & ΕΠΙΚΟΙΝΩΝΙΕΣ 1o Τμήμα (Α - Κ): Αμφιθέατρο 4, Νέα Κτίρια ΣΗΜΜΥ Διαμόρφωση Γωνίας (Angle Modulation) - 3
ΣΤΟΧΑΣΤΙΚΑ ΣΥΣΤΗΜΑΤΑ & ΕΠΙΚΟΙΝΩΝΙΕΣ 1o Τμήμα (Α - Κ): Αμφιθέατρο 4, Νέα Κτίρια ΣΗΜΜΥ Διαμόρφωση Γωνίας (Angle Modulaion) - 3 4.4: Βρόχος Κλειδωμένης Φάσης (Phase-Locked Loop - PLL) 4.5: Μη Γραμμικά Φαινόμενα
YB16200 ΓΕΝΝΗΤΡΙΑ ΑΚΟΥΣΤΩΝ ΣΥΧΝΟΤΗΤΩΝ ΜΕ ΕΝΙΣΧΥΤΗ ΕΓΧΕΙΡΙ ΙΟ Ο ΗΓΙΩΝ ΧΡΗΣΕΩΣ
YB16200 ΓΕΝΝΗΤΡΙΑ ΑΚΟΥΣΤΩΝ ΣΥΧΝΟΤΗΤΩΝ ΜΕ ΕΝΙΣΧΥΤΗ ΕΓΧΕΙΡΙ ΙΟ Ο ΗΓΙΩΝ ΧΡΗΣΕΩΣ ΕΠΙΣΤΗΜΟΝΙΚΕΣ ΕΠΙΧΕΙΡΗΣΕΙΣ Ε.Π.Ε. Αγ.Σαράντα 45, 18346-Μοσχάτο Τηλ.4823421, 4838270 Fax:4820580 Τα παρακάτω σύµβολα είναι πιθανόν
BIT ''Signal Interface Processors''
BIT ''Signal Interface Processors'' BIT ''Accessories'' To Bit Ten είναι ένας πολυλειτουργικός ψηφιακός επεξεργαστή αναλογικών εισόδων που μπορεί να μεταμορφώσει μια συνηθισμένη εργοστασιακή πηγή αλλά
The User Defined Functions of the Sonnet Lite free Electromagnetic Simulator. N.Ishitobi. Sonnet Giken Co. Ltd. Sonnet Lite S Sonnet Lite.
: Sonnet Lite The User Defined Functions of the Sonnet Lite free Electromagnetic Simulator N.Ishitobi Sonnet Giken Co. Ltd. Sonnet Lite S Sonnet Lite CRLH, KID : keywords : factor,, electromagnetic simulator,
VSC STEADY2STATE MOD EL AND ITS NONL INEAR CONTROL OF VSC2HVDC SYSTEM VSC (1. , ; 2. , )
22 1 2002 1 Vol. 22 No. 1 Jan. 2002 Proceedings of the CSEE ν 2002 Chin. Soc. for Elec. Eng. :025828013 (2002) 0120017206 VSC 1, 1 2, (1., 310027 ; 2., 250061) STEADY2STATE MOD EL AND ITS NONL INEAR CONTROL
Τo ελληνικό τραπεζικό σύστημα σε περιόδους οικονομικής κρίσης και τα προσφερόμενα προϊόντα του στην κοινωνία.
ΤΕΧΝΟΛΟΓΙΚΟ ΕΚΠΑΙΔΕΥΤΙΚΟ ΙΔΡΥΜΑ ΙΟΝΙΩΝ ΝΗΣΩΝ ΤΜΗΜΑ ΕΦΑΡMΟΓΩΝ ΠΛΗΡΟΦΟΡΙΚΗΣ ΣΤΗ ΔΙΟΙΚΗΣΗ & ΣΤΗΝ ΟΙΚΟΝΟΜΙΑ ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ Γεωργία Χ. Κιάκου ΑΜ : 718 Τo ελληνικό τραπεζικό σύστημα σε περιόδους οικονομικής
15PROC003166352 2015-10-14
Βαθμός Ασφαλείας: Να διατηρηθεί μέχρι: Βαθμός προτεραιότητας: ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ ΥΠΟΥΡΓΕΙΟ ΠΑΙΔΕΙΑΣ, ΈΡΕΥΝΑΣ ΚΑΙ ΘΡΗΣΚΕΥΜΑΤΩΝ ----- Μαρούσι, 14/10/2015 ΓΕΝΙΚΗ ΓΡΑΜΜΑΤΕΙΑ ΠΑΙΔΕΙΑΣ ΚΑΙ ΘΡΗΣΚΕΥΜΑΤΩΝ Αρ.
ΤΕΧΝΟΛΟΓΙΚΟ ΠΑΝΕΠΙΣΤΗΜΙΟ ΚΥΠΡΟΥ ΣΧΟΛΗ ΓΕΩΠΟΝΙΚΩΝ ΕΠΙΣΤΗΜΩΝ ΒΙΟΤΕΧΝΟΛΟΓΙΑΣ ΚΑΙ ΕΠΙΣΤΗΜΗΣ ΤΡΟΦΙΜΩΝ. Πτυχιακή εργασία
ΤΕΧΝΟΛΟΓΙΚΟ ΠΑΝΕΠΙΣΤΗΜΙΟ ΚΥΠΡΟΥ ΣΧΟΛΗ ΓΕΩΠΟΝΙΚΩΝ ΕΠΙΣΤΗΜΩΝ ΒΙΟΤΕΧΝΟΛΟΓΙΑΣ ΚΑΙ ΕΠΙΣΤΗΜΗΣ ΤΡΟΦΙΜΩΝ Πτυχιακή εργασία ΜΕΛΕΤΗ ΠΟΛΥΦΑΙΝΟΛΩΝ ΚΑΙ ΑΝΤΙΟΞΕΙΔΩΤΙΚΗΣ ΙΚΑΝΟΤΗΤΑΣ ΣΟΚΟΛΑΤΑΣ Αναστασία Σιάντωνα Λεμεσός
Supporting Information
Supporting Information rigin of the Regio- and Stereoselectivity of Allylic Substitution of rganocopper Reagents Naohiko Yoshikai, Song-Lin Zhang, and Eiichi Nakamura* Department of Chemistry, The University
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
Inverse trigonometric functions & General Solution of Trigonometric Equations. ------------------ ----------------------------- -----------------
Inverse trigonometric functions & General Solution of Trigonometric Equations. 1. Sin ( ) = a) b) c) d) Ans b. Solution : Method 1. Ans a: 17 > 1 a) is rejected. w.k.t Sin ( sin ) = d is rejected. If sin
ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ. Σχεδίαση-Κατασκευή-Μέτρηση γραμμικού ενισχυτή UHF 09197ΥΣ. Με εφαρμογή στην τηλεόραση, αναλογική-ψηφιακή. ΚΑΘΗΓΗΤΗΣ: ΦΟΙΤΗΤΗΣ:
ΠΤΥΧΙΑΚΗ ΕΡΓΑΣΙΑ 09197ΥΣ Σχεδίαση-Κατασκευή-Μέτρηση γραμμικού ενισχυτή UHF Με εφαρμογή στην τηλεόραση, αναλογική-ψηφιακή. ΦΟΙΤΗΤΗΣ: ΓΙΑΝΤΣΙΟΣ ΚΩΝ/ΝΟΣ (502606) ΚΑΘΗΓΗΤΗΣ: ΛΑΖΑΡΙ ΗΣ ΠΑΥΛΟΣ ΘΕΣΣΑΛΟΝΙΚΗ 2010
Ferrite Chip Beads. NCB Series
Ferrite hip eads N Series FETURES RUGGE ONSTRUTION IN STNR EI SIZES EFFETIVE EM/RFI SUPPRESSION UP TO 1 Ghz URRENT RTINGS UP TO 5 MPS (STYLE 2) 100% LOSE MGNETI IRUIT, VOIS ROSSTLK OTH FLOW N REFLOW SOLERING
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
High Power Amp BMT321. Application Note
RF MMIC Innovator www.berex.com [Classification] Application Note [Date] 2015.11 [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_Agilent N5182A
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
Correction of chromatic aberration for human eyes with diffractive-refractive hybrid elements
5 5 2012 10 Chinese Optics Vol. 5 No. 5 Oct. 2012 1674-2915 2012 05-0525-06 - * 100190-14 - - 14. 51 μm 81. 4 μm - 1. 64 μm / O436. 1 TH703 A doi 10. 3788 /CO. 20120505. 0525 Correction of chromatic aberration
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
MICROMASTER Vector MIDIMASTER Vector
s MICROMASTER Vector MIDIMASTER Vector... 2 1.... 4 2. -MICROMASTER VECTOR... 5 3. -MIDIMASTER VECTOR... 16 4.... 24 5.... 28 6.... 32 7.... 54 8.... 56 9.... 61 Siemens plc 1998 G85139-H1751-U553B 1.