High Power Amp BMT321. Application Note

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1 RF MMIC Innovator [Classification] Application Note [Date] [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_Agilent N5182A High Power Amp BMT321 Application Note 1

2 Contents RF MMIC INNOVATOR ~1880MHZ APPLICATION ~1880MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ~1880MHZ TEST RESULT(WCDMA_1FA_ACLR) ~1880MHZ TEST RESULT(LTE10MHZ_ACLR) ~1880MHZ TEST RESULT(LTE20MHZ_ACLR) ~1990MHZ APPLICATION ~1990MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ~1990MHZ TEST RESULT(WCDMA_1FA_ACLR) ~1990MHZ TEST RESULT(LTE10MHZ_ACLR) ~1990MHZ TEST RESULT(LTE20MHZ_ACLR) ~2170MHZ APPLICATION ~2170MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ~2170MHZ TEST RESULT(WCDMA_1FA_ACLR) ~2170MHZ TEST RESULT(LTE10MHZ_ACLR) ~2170MHZ TEST RESULT(LTE20MHZ_ACLR) ~2690MHZ APPLICATION ~2690MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ~2690MHZ TEST RESULT(WCDMA_1FA_ACLR) ~2690MHZ TEST RESULT(LTE10MHZ_ACLR) ~2690MHZ TEST RESULT(LTE20MHZ_ACLR) END---0 2

3 1. BMT321 _ 1805~1880MHz Application Note Schematic Diagram BOM Marks C uF C uF C pF C pF C N/A C N/A C pF C pF C N/A C pF C N/A C N/A C N/A C uF C pF C pF C pF L nH L nH Coil L nH R Ω ±5% R Ω ±5% PCB Diagram R Ω ±5% Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L3 7.9mm Input pin C16 3.5mm Output pin C17 3.9mm Pin 5 C10 3.1mm 1. We recommend to adjust capacitance of C10, when balance for multicarrier response of LTE20MHz is broken. 3

4 1.1 BMT321 _ 1805~1880MHz Test Result Freq Vcc Iref Icq Gain OIP3 P1dB IRL ORL NF [MHz] [V] [ma] [ma] [dbm] (1) [dbm] (1) OIP3 was (CW) 1MHz offset 4

5 1.2 BMT321_1805~1880MHz WCDMA 1FA ACLR Test Result 1805MHz 3GPP WCDMA TM1 +64DPCH 1FA MHz 3GPP WCDMA TM1 +64DPCH 1FA 1880MHz 3GPP WCDMA TM1 +64DPCH 1FA 5

6 1.3 BMT321_1805~1880MHz LTE10MHz ACLR Test Result 1805MHz 3GPP LTE E-TM3.1 10MHz MHz 3GPP LTE E-TM3.1 10MHz 1880MHz 3GPP LTE E-TM3.1 10MHz 6

7 1.4 BMT321_1805~1880MHz LTE20MHz ACLR Test Result 1805MHz 3GPP LTE E-TM3.1 20MHz MHz 3GPP LTE E-TM3.1 20MHz 1880MHz 3GPP LTE E-TM3.1 20MHz 7

8 2. BMT321_1930~1990MHz Application Note Schematic Diagram BOM Marks C uF C uF C pF C pF C N/A C N/A C pF C pF C N/A C pF C N/A C N/A C N/A C uF C pF C pF C pF L nH L nH Coil L nH R Ω ±5% R Ω ±5% PCB Diagram R Ω ±5% Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L3 6.8mm Input pin C16 3.5mm Output pin C17 3.5mm Pin 5 C10 3.1mm 1. We recommend to adjust capacitance of C10, when balance for multicarrier response of LTE20MHz is broken. 8

9 2.1 BMT321_1930~1990MHz Test Result Freq Vcc Iref Icq Gain OIP3 P1dB IRL ORL NF [MHz] [V] [ma] [ma] [dbm] (1) [dbm] (1) OIP3 was (CW) 1MHz offset 9

10 2.2 BMT321_1930~1990MHz WCDMA 1FA ACLR Test Result 1930MHz 3GPP WCDMA TM1 +64DPCH 1FA 1960MHz 3GPP WCDMA TM1 +64DPCH 1FA 1990MHz 3GPP WCDMA TM1 +64DPCH 1FA 10

11 2.3 BMT321_1930~1990MHz LTE10MHz ACLR Test Result 1930MHz 3GPP LTE E-TM3.1 10MHz 1960MHz 3GPP LTE E-TM3.1 10MHz 1990MHz 3GPP LTE E-TM3.1 10MHz 11

12 2.4 BMT321_1930~1990MHz LTE20MHz ACLR Test Result 1930MHz 3GPP LTE E-TM3.1 20MHz 1960MHz 3GPP LTE E-TM3.1 20MHz 1990MHz 3GPP LTE E-TM3.1 20MHz 12

13 3. BMT ~2170MHz Application Note Schematic Diagram BOM Marks C uF C uF C pF C pF C N/A C N/A C pF C pF C N/A C pF C N/A C N/A C N/A C uF C pF C pF C pF L nH L nH Coil L nH R Ω ±5% R Ω ±5% PCB Diagram R Ω ±5% Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L3 5.5mm Input pin C16 3.5mm Output pin C17 3.4mm Pin 5 C10 3.1mm 1. We recommend to adjust capacitance of C10, when balance for multicarrier response of LTE20MHz is broken. 13

14 3.1 BMT ~2170MHz Test Result Freq Vcc Iref Icq Gain OIP3 P1dB IRL ORL NF [MHz] [V] [ma] [ma] [dbm] (1) [dbm] (1) OIP3 was (CW) 1MHz offset 14

15 3.2 BMT321_2110~2170MHz WCDMA 1FA ACLR Test Result 2110MHz 3GPP WCDMA TM1 +64DPCH 1FA 2140MHz 3GPP WCDMA TM1 +64DPCH 1FA 2170MHz 3GPP WCDMA TM1 +64DPCH 1FA 15

16 3.3 BMT321_2110~2170MHz LTE10MHz ACLR Test Result 2110MHz 3GPP LTE E-TM3.1 10MHz 2140MHz 3GPP LTE E-TM3.1 10MHz 2170MHz 3GPP LTE E-TM3.1 10MHz 16

17 3.4 BMT321_2110~2170MHz LTE20MHz ACLR Test Result 2110MHz 3GPP LTE E-TM3.1 20MHz 2140MHz 3GPP LTE E-TM3.1 20MHz 2170MHz 3GPP LTE E-TM3.1 20MHz 17

18 4. BMT ~2690MHz Application Note Schematic Diagram BOM Marks C uF C uF C pF C pF C N/A C N/A C pF C pF C N/A C N/A C N/A C N/A C N/A C uF C pF C pF C pF L nH L nH Coil L nH R Ω ±5% R Ω ±5% PCB Diagram R Ω ±5% Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L3 7.1mm Input pin C16 3.5mm Output pin C17 3.5mm Pin 5 C10 2.7mm 18

19 4.1 BMT ~2690MHz Test Result Freq Vcc Iref Icq Gain OIP3 P1dB IRL ORL NF [MHz] [V] [ma] [ma] [dbm] (1) [dbm] (1) OIP3 was (CW) 1MHz offset 19

20 4.2 BMT321_2620~2690MHz WCDMA 1FA ACLR Test Result 2620MHz 3GPP WCDMA TM1 +64DPCH 1FA 2655MHz 3GPP WCDMA TM1 +64DPCH 1FA 2690MHz 3GPP WCDMA TM1 +64DPCH 1FA 20

21 4.3 BMT321_2620~2690MHz LTE10MHz ACLR Test Result 2620MHz 3GPP LTE E-TM3.1 10MHz 2655MHz 3GPP LTE E-TM3.1 10MHz 2690MHz 3GPP LTE E-TM3.1 10MHz 21

22 1.1 BMT321_2620~2690MHz LTE20MHz ACLR Test Result 2620MHz 3GPP LTE E-TM3.1 20MHz 2655MHz 3GPP LTE E-TM3.1 20MHz 2690MHz 3GPP LTE E-TM3.1 20MHz 22

23 23

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