LSI VCO Optimized Desin of Fully Interated VCO on Si Based Proess Nobuyuki Itoh Semiondutor Company, Toshiba Corporation 47-8585 -5-1 -5-1, Kasama, Sakae-ku, Yokohama, 47-8585, Japan Tel: +81-45-890-41, Fax: +81-45-890-493, nobuyuki3.ito@toshiba.o.jp VCO VCO VCO Abstrat This paper has desribed optimized desin methodoloy of fully interated VCO by several ain-ell topoloy viewpoints on phase noise usin Si based proess. Due to many andidate VCO was suitable at offset frequeny of far from arrier; VCO was suitable at that of viinity of arrier. Also to improve phase noise dependene on osillation frequeny of fully interated VCO, it was shown the osillation amplitude inreasin in lower osillation frequeny was one of the effetive methods. 1. LNA Low Noise Amplifier [1] MIX Mixer IF-AMP IF amplifier MIX Voltae Controlled Osillator PLL Phase Loked Loop
LO Loal Osillator 1 1(a) Si LO D LNA MIX VCO Si UDn VCO Si 1 Si Si VCO [] Si VCO. VCO VCO LO LO 5 (1). (). (3). (4). (5). VCO VCO (1). IF -1. VCO LO LO 1(b) 1(a) LO D LO IF IF-D IF IF-UDn IF IF LO 1(b) LOn UDn
-. VCO 1 VCO 3. 3-1. (1) Lesson % [3] kt F 1 ω os ω + L( ω + m ) 1 1 (1) Pos Q ω m ω m k T F P os Q Q ω os VCO ω m VCO ω os (1) () (1) Q () +/-10% (3) (4) 10% (5) VCO ind Q ωl () RS +/-10% ( ) Lind Rne ω R Q (3) S RS -3. F VCO ( 1 + A) R ne (4) kt Rs 1+ A ω os ω + L( ωm) 1 (5) Vos PA ωm ωm ON/OFF (5) R s /V os VCO 3-. VCO (1) VCO Q ( )
Q Lind Q sr (9) 3 Q Rs C p 3 Q Q Q Q Q (a) (b) () Q r Q (6) (7) 4 [4] 3 5 15 Rsub.1k ind Qr ωl (6) R S Q 10 Standard 5th Metal (Cp-65fF) 1 (7) ω L C Q ind p 5 ω sr Q sr (8) (9) R ω sr (8) 3 L s indc p Metal thikness1um 0 0 4 6 8 10 Frequeny [GHz] Ω Qtot Qr Q Qtot Frequeny [MHz] 3-3. VCO /Bi VCO /Bi /Bi 18 (1) ()pnp
(3) PMOS Rs m A ne A (11) 5 ( ωl ) ind m /I MOSFET m /I d (1) (13) m 1 39 (1) I V T I m d V V ( V V 50mV ) s s th th 8 (13) 5(a) (b) NMOS () PMOS (d) (e) R s 4 4 3-4. LC m MOSFET LC L VCO K (14) 5 (a) (d) 500MHz VCO [5] ω m >>ω (5) (10) ( 1+ A) kt Rs ω ( ) os L ω m (10) Vos ωm m (1) (13) m 5 VCO R s /V os R s 4 VCO L K (14) ind R s (11) (14) (15) m R A s A s 1 ( ωkr ) ( ωk ) Rs (15) A ω K m m (16)
R 4 (16) R NMOS + PMOS NMOS PMOS (16) (17) 31.6% 31.4% 600kHz -14.8-131.6 [db/hz] 3MHz -139. -141.6 8 (17) [ma] 5.9 3.9 NMOS PMOS (1) (13) m /I (18) (17) (18) 66% (10) (19) (19) I NMOS I d 39 8 (18) I d NMOS 39 1 39 39 61% (19) I 8 8 8 64-40 -60 f550mhz [MHz] 343-589 445-609 5.9mA 3.9mA 3-5. 5 (a) (e) 100MHz VCO Phase Noise [db/hz] -80-100 -10-140 -160 10 3 10 4 10 5 10 6 10 7 Offset Frequeny [Hz] Output reffered urrent noise [A/Hz] 10-16 10-17 10-18 10-19 10-0 SiGe- NMOS 61% VCO 6 (1) (5) 10-1 10 0 10 1 10 10 3 10 4 10 5 Frequeny [Hz]
MOSFET 8 8 1MHz -14.0dB/Hz 7 NMOS -130.4dB/Hz VCO NMOS 10kHz SiGe 9dB -80.3dB/Hz 8 NMOS -78.3dB/Hz (5) (0).5mA L L V R V R ( ωm) V ( ωm) kt R o o ( ω + ω ) m ( ω + ω ) m kt R o V, o, ( 1+ A) ( 1+ A) ω ω os 1 ω + m ωm ω ω os 1 ω + m ωm, (0), 3-4 V o /V o 8 ω NMOS /ω, ω /ω, 8 ω m ω, (0) (1) L L R ( ω m) 4 ( ωm) R 1 ( 1+ 8) ω ( 1+ 1), ω, 9R 8R (1) 1 5.8mA.3.7 3-140 10 3 10 4 10 5 10 6 (16) (17) (19) Rs Phase Noise [db/hz] () I NMOS 39 R d 39 () [MHz] 1067-1363 10-133 I 8 R 8 4.4% 5.6% (1) () (3) 10kHz -80.3-78.3 [db/hz] 1MHz -14.0-130.4 [ma].5 5.8 I R d 39 9 39. 74 (3) I Rs, 8 16 8 3-6.VCO VCO 3- Q VCO.7-40 -60-80 -100-10 Offset Frequeny [Hz]
Q 1GHz Q5 10 Q30 5() LC PMOS 450MHz VCO (1) P os 9 LC VCO VCO 11% VCO 3-4 ω os [6] VCO VCO 15 0dB -60 VCO ω os ω os 10 Phase noise [db/hz] -80-100 -10-140 10 3 10 4 10 5 10 6 Offset frequeny [Hz] VCO VCO Q VCO VCO VCO 3.mA 3-7. VCO
ω os -15 LC -130 [7] -135-140 [8] 11 Phase noise at 3MHz offset [db/hz] VCC3V L(3M),sim(turbo) L(3M),sim(wo turbo) L(3M),meas(turbo) -145 0.5 1 1.5.5 3 Vtrl [V] VCO F.O.M. Fiure of Merit (3) L( ωm ) ωm VCO FOM ( Current) (3) I VCO ωos 13 1999 4. VCO FOM 1 VCO (3) FOM VCO (1) VCO [9] 3V VCO FOM Current
FOM(Current) [db] 10 00 190 180 170 160 150 1 10 100 Tunin Rane [%] 5. VCO (ESSCIRC001), Villah, Austria, pp.344-347, September,001 [6] B. DeMuer, et al., A -GHz Low-Phase-Noise VCO Solid-State Ciruit vol. 35, No. 7, /3 pp.1034-1038, July, 000. [7] E. Heazi, et al., A Filterin Tehnique to VCO (ISSCC00), San Franiso, February 000. [] J. Crol et al., An Analytial Model of Planner Indutors on Lowly Doped Silion Substrates for Hih Frequeny Analo Desin up to 3 GHz, Pro. The tehnial Diest of IEEE VLSI Ciruit Symposiu June, 1996. [3] D. B. Lesson, A simple model of feedbak osillator noise spetru Pro. IEEE, vol. 54, pp39-330, February, 1966. [4] N.Itoh, "Low Power, Low Phase Noise Interated RF-VCO on Silion Proes" 00 Asia-Paifi Mirowave Conferene Workshop Diest, pp19-8, Kyoto, Japan, Nov. 00. [5] N.Itoh, et al., "Interated LC-tuned VCO in Bi proes" Pro. of the 7th 001 European Solid-State Ciruits Conferene Interated LC-VCO Set with Fliker Noise Uponversion Minimization, IEEE Journal of Lower LC Osillator Phase Noise, IEEE /5 Journal of Solid-State Ciruit vol. 36, No. 1, pp.191-1930, Deember, 001. [8] N.Itoh, et al., "100-MHz Fully Interated VCO with Turbo-Charer Tehnique," IEICE Transation of Eletroni vol. E85-C, No.8, pp.1569-1576, Auust, 00. [9] RF ISBN4-61-07005-3 [1] M.Steyaert, et al., A Volt Cellular Transeiver Front-End, The 000 IEEE International Solid-State Ciruits Conferene