CMOS Time-of-Flight Range Image Sensors

Μέγεθος: px

Εμφάνιση ξεκινά από τη σελίδα:

Download "CMOS Time-of-Flight Range Image Sensors"

Σεμέλη Ασπάσιος
5 χρόνια πριν
Προβολές:

1 CMOS Time-of-Flight Range Image Sensors Shoji KAWAHITO This article describes CMOS time-of-flight TOF range image sensors and their pixel devices, so-called lock-in pixels. The CMOS-TOF range image sensors are categorized into two types; direct and indirect TOF measurement types. The direct TOF measurement uses a direct measurement of photon arrival timing using a single photon avalanche diode SPAD and a precise time-to-digital converter. In the indirect TOF measurement, the TOF is estimated by a mechanism of time-dependent photo charge modulation. Sinusoidal or pulsed light modulations are used for phase or delay measurements by demodulating it in the lock-in pixels. Lock-in pixels are realized with CCD-like devices implemented based on CMOS technologies or device structures compatible with standard CMOS image sensor technology or a little modification of it. Recent trend shows that pinned photodiodes based lock-in pixels in standard CMOS technology are becoming popular. This article discusses the principle, operation and performance of these TOF range imaging methods and devices and their performance limitations. Key words: time of flight measurement, single photon avalanche diode, charge demodulation pixel, lock-in pixel, CMOS image sensor CMOS time of flight TOF CMOS complementary metal oxide semiconductor CMOS-TOF CMOS TOF TOF TOF TOF TOF SPAD single photon avalanche diode TDC time to digital converter TOF CMOS-TOF 1. TOF TOF 100 ps TOF kawahito@idl.rie.shizuoka.ac.jp 262 2

2 1 SPAD single-photon avalanche diode a b c SPAD pn TOF SPAD single photon avaranche diodespad 1 1 SPAD V bd 1 SPAD V bd p MOSFET quenting CMOS SPAD SPAD 1 c CMOS n-well p pn p p-well TOF TDC SPAD CMOS TDC 2 SPAD TDC 1 a S TDC 2 TDC RS SPAD RS TOF TOF 1 mm 263 3

3 3 2 TDC a b TOF 6.6 ps 150 GHz CMOS 2 TDC coarse 1 fine TDC TDC 1 10 ps 10 ps TOF ps 1.8 mm 1 SPAD TOF TDC TOF 2 10 TDC 3 TDC DLL delay locked loop 2 SPAD TOF TDC TDC SPAD TOF 2. TOF TOF TOF CCD 3 2 1, 2 2 1, L t d c L 1/2 ct d 2

4 a 0, a 1, a 2, a 3 j ϕ arctan a a a a t d j /2p f m f m B TOF 5 1 CMOS 5 CCD CCD- CMOS PGM PGL PGR PGL PGR IG a 0, a 1, a 2, a mm 21 mm TOF 2.5 pw 20 MHz 2 cm 5 2-tap 0.6 mm mm 40 mm TOF 6 2-tap 5 PGR IG OUTG 1.2 m 5 mm CCD CMOS TOF CMOS 6 CMOS CMOS-TOF 7 b 3 1 n FD1, FD2 ktc 6 a TXD 265 5

5 7 6 CMOS a b X-X 7 7 TX1 TX2 PG FD1, FD2 TXD CMOS mm 15 mm CMOS-TOF 25 ns 30 frames/s 1 V 5 mm 10 3 frames/s 2 mm CMOS 2 PMD photo mixing device 2-tap a 2 2-tap p- 8 CMOS 8 CMOS a photogate b pinned photodiode

6 9 pinned photodiode b 2-tap TOF L ct d /2 cj /4p f m B A A B N s A 2N s L N b N r i 3 L ai a 0 L L 8 N s B B N N N m 5 mm i 2 B 3 A N b 2 s b r 5 CCD IG FD CDS correlated double sampling 6 8 CMOS N reset N reset 2 V V 4 V th 26 mv V s N well V s 1 V N well 200,000 N well CMOS TOF CCD 9 3. CMOS-TOF LED th s N well

7 TOF TOF TOF TOF 1 C. Niclass, A. Rochas, P.-A. Besse and E. Charbon: Design and characterization of a CMOS 3-D image sensor based on single photon Avalanche diodes, IEEE J. Solid-State Circ., C. Niclass, C. Favi, T. Kluter, M. Gersbach and E. Charbon: A single-photon image sensor with column-level 10-Bit time-to-digitalconverter array, IEEE J. Solid-State Circ., T. Spirig, P. Seitz, O. Vietze and F. Heitger: The lock-in CCD Two dimensional synchronous detection of light, IEEE J. Quantum Elecron., R. Miyagawa and T. Kanade: CCD-based range-finding sensor, IEEE Trans. ED, R. Lange and P. Seitz: Solid-state time-of-flight range camera, IEEE J. Quantum Electron., B. Buttgen, T. Oggier, M. Lehmann, R. Kaufmann, S. Neukom, M. Richter, M. Schweizer, D. Beyler, R. Cook, C. Gimkiewicz, C. Urban, F. Metzler, P. Seitz and F. Lustenberger: High-speed and high-sensitive demodulation pixel for 3D imaging, Proc. SPIE, S. Kawahito, I. A. Halin, T. Ushinaga, T. Sawada, M. Homma and Y. Maeda: A CMOS time-of-flight range image sensor with gates-on-field-oxide structure, IEEE Sens. J., D. Stoppa, N. Massari, L. Pancheri, M. Malfatti, M. Perenzoni and L. Gonzo: A range image sensor based on 10-mm lock-in pixels in 0.18 mm CMOS imaging technology, IEEE J. Solid- State Circ., H. J. Yoon, S. Itoh and S. Kawahito: A CMOS image sensor with in-pixel two-stage charge transfer for fluorescence lifetime imaging, IEEE Trans. Electron Devices, S. J. Kim, S. W. Han, B. Kang, K. Lee, D. K. Kim and C. Y. Kim: A three-dimensional time-of-flight CMOS image sensor with pinned-photodiode pixel structure, IEEE Electron Device Lett.,

Σχετικά έγγραφα

Reaction of a Platinum Electrode for the Measurement of Redox Potential of Paddy Soil

J. Jpn. Soc. Soil Phys. No. +*0, p.- +*,**1 Eh * ** Reaction of a Platinum Electrode for the Measurement of Redox Potential of Paddy Soil Daisuke MURAKAMI* and Tatsuaki KASUBUCHI** * The United Graduate