MULTILAYER CHIP COMPONENTS CHIP INDUCTOR / BEADS EMI /ESD PRODUCTS PRODUCTS for COMMUNICATION EQUIPMENT

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1 October Passive components Sales Office Head Office 6, Cheomdansaneop oad, Youngtonggu, Suwon, Kyonggi Province 3 73, Korea Europe e l: james.pyun@samsung.com America e l: randy.kim@samsung.com Asia e l: koogi@samsung.com Domestic e l: southjoy@samsung.com Manufacturing Site Suwon Plant 6 Cheomdansaneop oad, Youngtong gu, Suwon, Kyonggi Province 3 73, Korea e l: randy.kim@samsung.com Busan Plant 63, Songjeong dong, Kangseogu, Busan 67, Korea e l: kyc.kweon@samsung.com ianjin Plant 7, Heiniucheng oad, Hexi District, ianjin, China 3 e l: (3) gk.ryu@samsung.com Philippines Plant Calamba Premiere International Park, Batino, Calamba, aguna, Manila e l: ksj@samsung.com Asia sales office Shanghai Office m Shanghai international trade center No Yan an() D Shanghai China 3 e l:6 67 6(7) dennis.cha@samsung.com Irvine Office Michelson Drive, Suite,Irvine, CA e l: sh36.kim@samsung.com Shenzhen Office m, /F, New orld Center, Yitian oad, Futian District, Shenzhen, China 6 e l: jackson.xian@samsung.com Singapore Office 3 Church Street Samsung Hub #3 Singapore 93 e l: (6) winson.yeong@samsung.com Europe sales office Frankfurt Office Samsung haus Am Kronberger Hang 6 D6 Schwalbach/s. e l: FA:9() frank.goebel@samsung.com Qingdao Office m. Growne Plaza Qingdao; 76iangGanghong d, Qingdao;667 P.. China e l: zhengguo.cui@samsung.com HongKong Office Suite, wo int l Finance Centre, Finance Street, Central, Hongkong e l: 6 6 vinsent.chou@samsung.com America sales office Hungary Office H3, Szigetszentmiklos, eshegy u., Hungary e l:36 junc.lee@samsung.com Domestic Distributors KOCHIP INC #9 Gasan dong, Gumchun gu, Seoul, Korea e l: + 3 hjh6@korchip.com CHUNG HAN #696 Hangang lo 3, Youngsan Gu, Seoul, Korea e l: bu3choi@hanmail.net hai Office ellgrow Industrial Estate, 93 Moo. Bangsamak, A.Bangpakong Chachoengsao hailand e l: sbimm@samsung.com SAM Daekyung Bldg.,DaechiDong, Gangnam Gu, Seoul, Korea e l: info@isamt.com aiwan Office 399 9F, uey Kuang d., Neihu, aipei, aiwan e l: kevin3.wang@samsung.com CHUNGMAC #3 onhyolo3 Youngsan gu, Seoul, Korea e l: ~9 webmaster@anycam.co.kr APEIN, oom #9. C dong oorimlion s, Valley 37, Gasandong, GuemcheonGu, Seoul, Korea e l: + 6 6() info@apexint.co.kr All information indicated in this catalog is as of october. he specifications and designs contained herein may be subject to change without notice. MUIAYE CHIP COMPONENS CHIP INDUCO / BEADS EMI /ESD PODUCS PODUCS for COMMUNICAION EQUIPMEN

2 CONENS Chip Beads CIB/CIM CIA CIC/CIS 6 Chip Inductors CI CIH Power Inductor 9 39 EMI/ESD Products EMI/ ESD Filter 3erminal Capacitor Products For Communication Equipment e, Samsung, declare that our component Chip Bead / Inductor is produced in accordance with EU ohs directive. Diplexer Band Pass/ow Pass Filter. ohs Compliance and restriction of Br he following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction. Cd, Pb, Hg, Cr+6, As, Br and the compounds, PCB, asbestos Bromic materials : PBBs, PBBOs, PBDO, PBDE, PBB Appendix. No use of materials breaking Ozone layer he following ODS materials are not used in our fabrication process. ODS material : Freon, Haron, CE, CCl, HCFC Soldering Condition Packaging If you want more detailed Information,Please Visit Samsung Electromechanics ebsite [ Certification list of Samsung Factory Certification 9 (Product) ISO (Factory) ISO / S699: (Product) OSHAS BUSAN BSI FM9 BSI EMS66 BSI FMS93 BSI OHS

3 Chip Bead ; CIB/CIM For EMI Suppression Feature Smallest beads suitable for surface mounting Perfect shape for automatic mounting, with no directionality. Excellent solderability and high heat resistance for either flow or reflow soldering. Monolithic inorganic material construction for high reliability. Closed magnetic circuit configuration avoids crosstalk and is suitable for high density PCBs. Application High frequency EMI prevention application to computers, printers, VCs, Vs and portable telephones. he CIB/CIM are used for EMI suppression filter. hese beads suppress electromagnetic wave noise by increased impedance, especially by increased resistance at noise frequency. CIB he CIB is composed of monolayer internal conductor that allows low impedance and low DC resistance. CIM he CIM display high impedance because it is composed of a multilayered internal conductor and has excellent attenuation characteristics for wide band frequencies. CIM 63() ype CIM 3N 3 CIM 3N CIM 3U CIM 3U CIM 3U CIM 3U 7 CIM 3U 6 CIM 3J CIM 3J CIM 3J 7 CIM 3J 6 hickness Impedance ()% MHz DC esistance () Max ated Current CIB/CIM Dimensions CIM () ype Ferrite Body External Electrode CI M 3 J N E () () (3) () () (6) (7) () Chip Beads () B:Monolayer type, M:Multilayer type (3) Dimension () Material Code P,U:Broad impedance, especially suppresses noise in the ~MHz range J :Suppresses noise in the ~3MHz range K :Suppresses noise in the MHz above N :Suppresses noise in the ~MHz range () Nominal impedance (: ; :) (6) hickness option(n:standard, A:hinner than standard, B:hicker than standard) (7) Packaging(C:paper tape, E:embossed tape) SIE CODE t d Part Numbering d t / ,.3.., Unit: mm CIM U CIM U 3 CIM U 6 CIM U CIM U CIM U CIM U 3 CIM U 7 CIM U 6 CIM U CIM J 3 CIM J 6 CIM J CIM J CIM J CIM J 3 CIM J 7 CIM J 6 CIM J CIM J CIM J hickness Impedance ()% MHz DC esistance () Max ated Current

4 CIB/CIM 6(63) ype CIB/CIM () ype CIB P 6 CIB P 33 CIM U CIM U CIM U 7 CIM U 6 CIM U CIM U CIM J CIM J 6 CIM J CIM J CIM J CIM J CIM J 7 CIM J 6 CIM J 7 CIM J CIM J CIM K CIM K CIM K CIM N 7 CIM N CIM N CIM F 6 hickness Impedance ()% MHz (at 7MHz) DC esistance () Max ated Current CIB P CIB P CIB P 6 CIB P 33 CIB P 7 CIM U CIM U CIM U CIM U CIM U CIM U 3 CIM U 7 CIM U 6 CIM U CIM U CIB J 6 CIB J CIM J 6 CIM J CIM J CIM J CIM J CIM J 3 CIM J 7 CIM J 6 CIM J CIM J CIM J CIM J CIM K CIM K CIM N 7 CIM N CIM N hickness Impedance ()% MHz (at 7MHz) (at 7MHz) (at 7MHz) (at 7MHz) (at 7MHz) 7 DC esistance () Max ated Current CIB/CIM CIB/CIM 36(6) ype CIB 3P 6 CIB 3P 3 CIB 3P CIB 3P 7 CIM 3U CIM 3U 6 CIM 3J CIM 3J CIM 3J 3 CIM 3J 6 CIM 3J CIM 3J CIM 3J hickness Impedance ()% MHz (at 7MHz) DC esistance () Max ated Current 3 6 7

5 Other ypes CIB 3P 3 CIB 3P 6 CIB P CIB P CIB 3P 3 CIB 3P hickness Customized products are available. est equipment : Agilent E99A+697A (63) Agilent 9B+69A () Agilent 9B+693A (6 and others) Impedance ()% MHz DC esistance () Max ated Current CIMU3 6 M M M G CIMU CIMU6 M M M G CIMU 6 CIMU M M M G CIMU3 CIB/CIM 3 3 CIM3N3 M M M G CIM3U M M M G CIM3U6 6 6 CIM3U M M M G CIM3N M M M G CIM3J CIM3U7 M M M G 6 CIM3U M M M G CIM3J M M M G 6 CIMU7 M M M G CIMJ3 M M M G M M M G CIMU6 CIMU M M M G M M M G CIMJ6 CIMJ M M M G M M M G M M M G M M M G M M M G M M G CIM3J7 CIM3J6 CIMU 3 CIMJ 6 CIMJ 6 CIMJ3 M M M G M M M G M M M G M M M G M M M G M M M G 9

6 CIMJ7 CIMJ6 CIMJ CIMJ 3 CIMJ CIMJ M M M G M M M G M M M G M M M G M M M G M M M G CIB/CIM CIMJ CIMJ CIBP6 CIMJ7 CIMJ6 CIMJ7 M M M G M M M G M M M G M M M G M M M G M M M G 6 CIBP33 CIMU 3 CIMU CIMJ CIMJ CIMK M M M G M M M G M M M G M M M G M M M G M M M G CIMU7 M M M G CIMU6 M M M G CIMU M M M G 3 CIMK M M M G 3 CIMK M M M G CIMN7 6 3 M M M G CIMU CIMJ CIMJ6 CIMN CIMN CIMF6 M M M G M M M G M M M G 6 M M M G M M M G M M M G

7 CIBP 3 CIBP CIBP6 6 CIBJ6 CIBJ CIMJ6 M M M G M M M G M M M G M M M G M M M G M M M G CIB/CIM 6 CIBP33 6 CIBP7 CIMU CIMJ 3 CIMJ 3 CIMJ M M M G M M M G M M M G M M M G M M M G M M M G CIMU CIMU 3 CIMU CIMJ 6 CIMJ3 CIMJ7 M M M G M M M G M M M G M M M G M M M G 6 M M M G 3 CIMU CIMU3 6 CIMU7 CIMJ6 CIMJ CIMJ M M M G M M M G M M M G M M M G M M M G M M M G CIMU6 CIMU CIMU CIMJ 3 CIMJ 3 CIMK M M M G M M M G M M M G M M M G M M M G M M M G 3

8 CIMK 3 3 CIMK CIMN7 CIM3J CIM3J CIM3J M M M G M M M G 3 M M M G M M M G M M M G M M M G CIB/CIM CIMN CIMN CIB3P6 6 CIB3P3 CIB3P6 CIBP 3 M M M G M M M G M M M G M M M G M M M G M M M G 6 CIB3P3 CIB3P CIB3P7 3 CIBP CIB3P3 3 CIB3P M M M G CIM3U M M M G CIM3U6 M M M G 3 CIM3J M M M G M M M G M M M G M M M G M M M G M M M G CIM3J 6 CIM3J3 CIM3J6 M M M G M M M G M M M G

9 Chip Bead Array; CIA For EMI Suppression he CIA is an array of ferrite beads used for EMI suppression filters. his series is often used for high density Printed Circuit Boards to save the space and cost. It suppresses electromagentic wave noise by increased impedance, especially by increased resistance at noise frequency. Dimensions SIE CODE 3 D P Feature Four lines by one chip Perfect shape for automatic mounting, with no directionality. Excellent solderability and high heat resistance for either flow or reflow soldering. Closed magnetic circuit configuration with no crosstalk which is suitable for high density PCBs. Application EMI prevention in Notebook PC, CD and car navigation Ideal for dealing with line noise from multiple signals such as in computer buses. D D D P Unit : mm CIA 36 (6) ype hickness CIA 3U 3.. CIA 3U 6.. CIA 3U.. CIA 3U.. CIA 3U.. CIA 3U.. CIA 3U 3.. CIA 3U 7.. CIA 3U 6.. CIA 3U.. CIA 3J 3.. CIA 3J 6.. CIA 3J.. CIA 3J.. CIA 3J.. CIA 3J.. CIA 3J 3.. CIA 3J 7.. CIA 3J 6.. CIA 3J.. CIA 3N.. CIA 3N.. CIA 3N.. Customized products are available. est equipment : Agilent 9B+69A Impedance ()% MHz DC esistance () Max ated Current CIA Part Numbering CI A 3 J N E () () (3) () () (6) (7) () Chip Beads () A:Bead array (3) Dimension () Material Code U:Broad impedance, especially suppresses noise in the ~MHz range J:Suppresses noise in the ~3MHz range N:Suppresses noise in the ~MHz range () Nominal Impedance(:, 3 : 3) (6) hickness option(n: Standard, A: hinner than standard, B: hicker than standard) (7) Packaging(C: paper tape, E: embossed tape) 6 7

10 CIA3U3 CIA3U6 CIA3U 6 CIA3J 6 CIA3J3 CIA3J7 M M M G CIA3U M M M G CIA3U M M M G CIA3U M M M G CIA3J6 M M M G CIA3J M M M G 6 CIA3N CIA M M M G M M M G M M M G M M M G M M M G M M M G 6 CIA3U3 6 CIA3U7 CIA3U6 CIA3N CIA3N M M M G M M M G M M M G 6 M M M G M M M G CIA3U CIA3J3 CIA3J6 M M M G M M M G M M M G CIA3J 3 CIA3J 6 CIA3J M M M G M M M G M M M G 9

11 Chip Bead ; CIC/CIS For High Current Feature he smallest beads used for high current. (CIC: ~3A, CIS: ~6A) CIC () ype hickness Impedance ()% MHz DC esistance () Max. ated Current Application Suppression of noise in power line CIC P 3 CIC P 6 CIC P CIC J he CIC/CIS can be used in high current owing to their low DC resistance. hey can match power lines to a maximum of 6A DC. Dimensions SIE CODE Ferrite Body External Electrode t d d /.... t ,.3.., Unit : mm CIC 6(63) ype CIC P CIC P CIC P 3 CIC P 6 CIC P CIC P CIC P CIC P 3 CIC P 33 CIC J CIC J 3 CIC J 6 CIC J CIC J CIC J 3 CIC J 7 CIC J 6 hickness Impedance ()% MHz DC esistance () Max ated Current CIC/CIS CIC () ype Part Numbering CI C P 3 N C () () (3) () () (6) (7) () Chip Beads () C: For high current ~3A, S: Ultra high current ~6A (3) Dimension () Material Code(J, P) () Nominal impedance(3: 3, : ) (6) hickness option(n: Standard, A: hinner than standard, B: hicker than standard) (7) Packaging(C: paper tape, E: embossed tape) CIC P CIC P 3 CIC P 6 CIC P CIC P CIC P CIC J 6 CIC J CIC J CIC J 3 CIC J 7 CIC J 6 hickness Impedance ()% MHz DC esistance () Max ated Current 6 3 3

12 CIC 36(6) ype CIC 3() ype CIC 3P 3 CIC 3P CIC 3P 7 CIC 3P CIC 3P CIC 3P 3 CIC 3P 7 CIC 3P 6 CIC 3J 3 CIC 3J CIC 3J CIC 3J CIC 3J CIC 3J 3 CIC 3J 7 CIC 3J 6 CIC 6(6) ype CIC P 6 CIC P CIC P CIC P CIC P 3 CIC P 7 CIC P 6 CIC J CIC J CIC J CIC J CIC J 3 CIC J 7 CIC J 6 hickness hickness Impedance ()% MHz Impedance ()% MHz DC esistance () Max DC esistance () Max ated Current ated Current CIC 3P 3 CIC 3P 7 CIC 3P CIC 3P CIC 3P 3 CIC 3P 7 CIC 3P 6 CIC 3J 3 CIC 3J CIC 3J 3 CIC 3J 7 CIC 3J 6 CIS CIS J 3 CIS P 3 CIS J CIS 3P CIS 3J CIS P 6 CIS J 6 CIS 3P hickness hickness Customized products are available. est equipment : Agilent 9B+69A () Agilent 9B+693A (6 and others) 6 CICP3 M M M G CICP3 Impedance ()% MHz (at MHz) Impedance ()% MHz CICJ6 M M M G CICP6 DC esistance () Max DC esistance () Max ated Current ated Current CICP M M M G CICP CIC/CIS M M M G M M M G M M M G 6 3 7

13 CICP CICP33 CICJ6 CICJ7 CICJ6 CIC3P3 M M M G M M M G M M M G M M M G M M M G M M M G 3 CICJ CICJ CICP CIC3P CIC3P CIC3P CIC/CIS M M M G M M M G M M M G M M M G M M M G M M M G CICP3 CICP6 CICP CIC3P3 6 CIC3P7 6 CIC3P6 M M M G M M M G M M M G M M M G M M M G M M M G CICP 3 CICP CICJ6 CIC3J3 CIC3J CIC3J M M M G M M M G M M M G M M M G M M M G M M M G 3 CICJ CICJ 6 CICJ3 CIC3J CIC3J CIC3J3 M M M G M M M G M M M G M M M G M M M G M M M G

14 6 CIC3J7 CIC3J6 CICP6 CICJ6 6 CIC3P3 CIC3P7 M M M G M M M G M M M G M M M G M M M G M M M G CICP M M M G CICP M M M G CICP 3 M M M G CIC3P M M M G CIC3P M M M G CIC3P3 M M M G CIC/CIS CICP3 6 CICP7 CICP6 6 CIC3P7 CIC3P6 6 CIC3J3 M M M G M M M G M M M G M M M G M M M G M M M G CICJ CICJ CICJ 3 CIC3J CIC3J3 6 CIC3J7 M M M G M M M G M M M G M M M G M M M G M M M G CICJ CICJ3 6 CICJ7 CIC3J6 6 CISJ3 CISP3 M M M G M M M G M M M G M M M G M M M G M M M G 6 7

15 Chip Inductor; CI Ordinary ype CISJ M M M G CISJ6 CIS3P M M M G CIS3P CISP6 M M M G Feature Magnetic shielding eliminates crosstalk, thus permitting higher mounting density. Excellent solderability and high heat resistance for either flow or reflow soldering. Monolithic structure for high reliability. Application esonance circuits, P circuits, Noise suppression, etc. As it has ferrite body and % Ag internal conductor, the CI series Inductors have excellent Q characteristics and free of cross talk. M M M G M M M G Dimensions Ferrite Body External Electrode d t CI Unit : mm SIE CODE d ,.3..,.3 Part Numbering CI Y 6 K N C () () (3) () () (6) (7) () () Chip Inductor () :Ordinary type (3) Dimension () Material code(n, J, Y, S) () Inductance(:.H, 6:.6H, :H) (6) olerance(k:%, M:%) (7) hickness option(n:standard, A:hinner than standard, B:hicker than standard) () Packaging(C:paper tape, E:embossed tape) 9

16 CI 6(63) ype CI () ype hickness Inductance (H) Q Min., Q test frequency (MH) SF (MH) Min. DC resistance () Max. ated current hickness Inductance (H) Q Min., Q test frequency (MH) SF (MH) Min. DC resistance () Max. ated current CI N 7N...7%, % 6.3 CI N 7N...7%, % 3. 3 CI N 6N...6%, % 6.3 CI N 6N...6%, %. 3 CI N 6N...6%, %.3 CI N N...%, %. 3 CI N N...%, %.3 CI N...%, %.3 CI N...%, %. CI N...%, %.3 CI N...%, %. CI N...%, %. CI N...%, %.6 CI N...%, %. CI N CI N CI N %, %.%, %.7%, % CI N CI N 7 CI N %, %.7%, %.33%, % 7... CI CI N %, %. CI N %, %.6 CI N %, %. CI N 7...7%, %.6 CI N 7...7%, %. CI N 6...6%, %.7 CI N 6...6%, % 9. CI N 6...6%, %. CI N 6...6%, %.7 CI N...%, %. CI N...%, % 7. CI J...%, % 7. CI J...%, % 7.6 CI J...%, % 6. CI J...%, % 6. CI J...%, % 6. CI J...%, %. CI J...%, %.6 CI J...%, %.9 CI J...%, %.6 3 CI J...%, %. CI J 7...7%, %.7 3 CI J 7...7%, %. CI J %, %. 3 CI J %, % 3. CI J %, % CI J %, % 36.7 CI J 7...7%, %. 3 CI J 7...7%, % 33. CI Y 6...6%, % 3.9 CI Y 6...6%, %. CI Y %, % 9. CI Y %, %.7 CI Y...%, % 6. CI Y...%, %. CI Y...%, %. CI Y...%, % 7. CI Y...%, %. CI Y...%, %.7 CI S...%, % 3 9. CI S...%, %.7 CI S...%, % 3.9 CI S...%, % 3. CI S...%, % 3 6. CI S...%, %. CI S %, % 3. CI S %, %.7 CI S %, % CI S 33.. : olerance (K: %, M:%) est equipment:agilent 9B+693A 33.%, %. 9.9 : olerance (K: %, M: %) est equipment:agilent 9B+693A 3 3

17 CI 36(6) ype 6 ype hickness Inductance (H) Q Min., Q test frequency (MH) SF (MH) Min. DC resistance () Max. ated current IMPEDANCE CHAACEISICS Q CHAACEISICS CI 3N 7N CI 3N 6N CI 3N CI 3N CI 3N CI 3N %, %.6%, %.%, %.%, %.%, %.%, % IMPEDANCE () H.H.H.6H Q 6 H.H.H.6H CI 3N CI 3N 7 CI 3N 33 CI 3N 39 CI 3N %, %.7%, %.33%, %.39%, %.7%, % FEQUENCY(MH) DC BIAS CHAACEISICS. FEQUENCY(MH) EMPEAUE CHAACEISICS CI CI 3N 6 CI 3N 6 CI 3N CI 3J CI 3J CI 3J CI 3J CI 3J CI 3J %, %.6%, %.%, %.%, %.%, %.%, %.%, %.%, %.7%, % INDUCANCE(H). H H.H.H DC BIAS(mA) INDUCANCE CHANGE(%) EMPEAUE().H H.H H CI 3J %, %.7 CI 3J 39 CI 3J 7 CI 3Y 6 CI 3Y 6 CI 3Y %, %.7%, %.6%, % 6.%, %.%, % ype IMPEDANCE CHAACEISICS Q CHAACEISICS CI 3Y CI 3Y CI 3S CI 3S CI 3S CI 3S %, %.%, %.%, %.%, %.%, % 7.%, % IMPEDANCE () H H.H.H Q 6 H H.H.H CI 3S 33.. : olerance (K: %, M:%) est equipment:agilent 9B+693A 33.%, %. 3. FEQUENCY(MH). FEQUENCY(MH) 3 33

18 Chip Inductor; CIH High Frequency ype INDUCANCE(H) DC BIAS CHAACEISICS H.H.7H.H INDUCANCE CHANGE(%) EMPEAUE CHAACEISICS 6 7.H.H.7H H Feature owest value of specific resistivity, good property of Q and high SF. Possible to use at range above MHz Monolithic structure for high reliability. Application Mobile communication systems, noise suppression at high frequency and Impedance matching.. 6 CIH has dielectric material and % Ag as an internal conductor herefore, it has high Q and ll at high frequency. It is possible to use for high frequency over MHz. DC BIAS(mA) EMPEAUE() Dimensions 36 ype IMPEDANCE CHAACEISICS Q CHAACEISICS Marking(except ) External Electorode Ceramic Body d t CIH IMPEDANCE () H.H.H Q 6 H.H.H SIE CODE t.3.3 Unit : mm d.. FEQUENCY(MH). FEQUENCY(MH) / /.3 DC BIAS CHAACEISICS EMPEAUE CHAACEISICS 6 INDUCANCE(H). H H.H DC BIAS(mA) INDUCANCE CHANGE(%).H.H H 7 6 EMPEAUE().H H.H Part Numbering CI H 3 N J N C () () (3) () () (6) (7) () () Chip Inductor () H:High frequency type (3) Dimension () Material code(:dielectric material) () Inductance( N7:.7nH, N: nh, : nh) (6) olerance(s:.3nh, J:%, K:%, C:.nH) (7) hickness option(n:standard, A:hinner than standard, B:hicker than standard) () Packaging(C:paper tape, E:embossed tape) 3

19 CIH 63() ype CIH () ype CIH 3 N CIH 3 N CIH 3 N CIH 3 N CIH 3 N CIH 3 N7 CIH 3 3N3 CIH 3 3N9 CIH 3 N7 CIH 3 N6 CIH 3 6N CIH 3 N CIH 3 N CIH 3 N CIH 3 N CIH 3 N Inductance (nh)..nh,.3nh..nh,.3nh..nh,.3nh..nh,.3nh..nh,.3nh.7.nh,.3nh 3.3.nH,.3nH 3.9.nH,.3nH.7.nH,.3nH.6.nH,.3nH 6.%.%.%.%.%.% Q (Min.) MHz Q (typical) Frequency (MHz) SF esonant Frequency (MHz) DC resistance () min max ated current (ma) Max. 3 3 CIH N S CIH N S CIH N S CIH N S CIH N S CIH N7 S CIH 3N3S CIH 3N9S CIH N7S CIH N6S CIH 6NJ CIH NJ CIH NJ CIH NJ CIH NJ CIH NJ CIH NJ CIH 7NJ CIH 33NJ Inductance 3.3%,.3nH 3.9%,.3nH.7%,.3nH.6%,.3nH 6.%, %.%, %.%, %.%, %.%, %.%, %.%, % 7.%, % 33.%, % MHz Q (typical.) MHz MHz SF (MHz) Min DC resistance () Max ated current CIH CIH 3 N.% CIH 39NJ 39.%, % 6. CIH 3 7N CIH 3 33N CIH 3 39N CIH 3 7N CIH 3 6N 7.% 33.% 39.% 7.% 6.% : olerance (C:.nH, S:.3nH, J:%) est equipment: Agilent E99A+696C CIH 7NJ CIH 6NJ CIH 6NJ CIH NJ CIH J 7.%, % 6.%, % 6.%, %.%, %.%, % : olerance (S:.3nH, J:%, K:%) est equipment:agilent 9B+69A

20 Power Inductor General Features CIH 6(63) ype Q (typical) DC resistance (Ω) Max. ated current. 3.±.3nH. 3 CIH N S.±.3nH 6. 3 CIH N S.±.3nH 6. 3 CIH N S.±.3nH 6. 3 CIH N7 S.7±.3nH 6. 3 CIH 3N3 3.3±.3nH,% 6. 3 CIH 3N9 3.9±.3nH,% CIH N7.7±.3nH,% CIH N6.6±.3nH,% 7. 3 CIH 6N 6.±%, % 7. 3 CIH N.±%, % 6. 3 CIH N.±%, % MHz CIH N S.±.3nH CIH N S CIH N.±%, % 6. 3 CIH N.±%, % CIH N.±%, %. 3 CIH N.±%, % 6. 3 CIH 7N 7.±%, %. 3 CIH 33N 33.±%, %. 3 CIH 39N 39.±%, %.6 3 CIH 7N 7.±%, % CIH 6N 6.±%, % 6.±%, % () 7. 3.±%, % () CIH.±%, % () 6. 3 CIH.±%, % (). 3 CIH.±%, % (). 3 CIH.±%, % ().3 3 CIH.±%, % (). 3 CIH 7 7.±%, % (). 3 CIH 6N CIH N ow profile (.mm max height) Magnetically shielded and ow DC resistance ead free termination and internal electrode Monolithic structure for high reliability Application Mobile phones, DSC, DVC, PDA etc. for DC DC Converter Dimensions d Ferrite Body External Electrode t Power Inductor MHz SF (MHz) Min. Inductance Dimension SIE CODE t d.±..±..max /.max.~.7.±..±.. max.3~. Part Numbering CI () G () (3) () 7 () M (6) N (7) E () () Chip inductor () Power inductor (3) Dimensions () Product (:Normal ype, : ow dc ype, F: ow Profile ype) () Inductance (:.uh, 7:.7uH) (6) olerance (M: ±%) (7) hickness Option (N: Standard) () Package Style (C: Paper tape / 7 reel, E: Embossed tape / 7 reel) : olerance (S : ±.3nH, J : ±%, K:±%) equipment : Agilent 9B+69A est () MHz, () MHz, 3 39

21 CIG () ype ow Profile CIG () ype ow Profile CIGFMNC Inductance DC esistance ( ated Current. Idc (A) =. %.3 %.6 Inductance (uh) CIGFMNC Frequency (MHz) CIG () ype CIG () ype CIGMNE CIGMNE CIGMNE CIGMNE CIGMNE CIGMNE CIG33MNE CIG7MNE Inductance %. %. % 3.3 %.7 % DC esistance (.3 %. %. %. %.3 % ated Current. Idc (A) = Inductance (uh). Frequency (MHz) CIG33MNE Inductance (uh). Frequency (MHz) CIG7MNE Inductance (uh). Frequency (MHz) CIG () ypeow DC CIGMNE CIGMNE CIGMNE CIGMNE CIG33MNE Inductance %. %. %. % 3.3 % DC esistance (.63 %.63 %.73 %.3 %.3 % ated Current. Idc (A) = Inductance (uh). Frequency (MHz) Inductance (uh) CIG () ypeow DC. Frequency (MHz) Inductance (uh). Frequency (MHz) CIGMNE CIGMNE Inductance (uh). Frequency (MHz) CIGMNE Inductance (uh). Frequency (MHz) ESD/EMI/C Filter CIG7MNE.7 %.3 %. CIGMNE CIG33MNE CIG7MNE CIG6MNE 6. % CIGMNE. % est equipment:agilent 9B+693A.3 %.33 %..6 Inductance (uh). Frequency (MHz) Inductance (uh). Frequency (MHz) Inductance (uh). Frequency (MHz) CIG6MNE Inductance (uh) Frequency (MHz) CIGMNE Inductance (uh) Frequency (MHz)

22 EMI/ ESD products ESD/EMI/C filter Feature EMI C Filter s Property Steep Cut off frequency Characteristics Good Attenuation in GSM, CDMA, PCS Frequency ange (7 MHz ~ 9 MHz) High Attenuation Characteristics ( db) on broad band ( MHz ~ 3 MHz) No deterioration of signal level in ow Frequency range No Voltage Drop phenomena (ow DC esistance) ESD C Filter s Property High Value Assurance of kv ESD Protection (contact discharge) ype of Filters & Equivalent Circuits ype Equivalent Circuit EMI C Array EMI C Array ESD C Array ype Filter ype Filter ype Filter ype Filter Application Suitable for high speed data lines, I/O Noise suppression of Digital Equipment Applicable to CD line and Camera circuit of HHP EMI C filter reduces EMI emissions in CD, camera lines and protect against ESD. ESD C Filter also applies to CD and camera data lines and provides highlevel of ESD protection as well as EMI suppression. ine up EMIC7SANE EMICSANE EMICSANE EMIC7SAAE EMICMANE EMICMPAC EMICNE EMIAFNPC EMIA39FNPC EMI C Array ype Dimensions A B C Unit : mm Part Number EMIC7SANE EMICSANE EMICSANE EMICMANE Nominal Capacitance (pf) (at MHz) 7 Cutoff Frequency (MHz) 3 ated Voltage (V)DC ated Current (ma) Insulation esistance (M) Min. Min. Min. Min. ypical Attenuation ange (MHz) 7~9(dB) 7~(3dB) 76~36(dB) 7~(dB) ESD/EMI/C Filter SIE CODE A B C EMIC7SAAE 7 Min. 7~(3dB) /. EMICMPAC 36 Min. ~(3dB) EMI C Array ype Part Numbering EMI C S A N E () () (3) () () (6) (7) () () Chip EMI Filter C Array : C Array ype : C Array ype : ESD C Array ype () Dimension (3) Capacitance emperature Characteristics [C : 3(ppm/) at ~+] () Nominal Capacitance [ : (pf)] () Capacitance olerance (S : % ~ +%, M : %) (6) ated Voltage [B : (V), A : (V), O : 6(V), P : (V)] (7) hickness Option (N:Standard, A:hinner than standard, B: hicker than standard) () Packaging (C:Paper ype, E: Embossed ype) Part Number esistance () EMICNE ESD C Array ype Part Number EMIAFNPC EMIA39FNPC Capacitance (pf) 39 Capacitance (pf) Cutoff Frequency (MHz) 7 ated Voltage (VDC) ated Current (ma) ypical Attenuation ange (MHz) 67~(3dB) orking Frequency (V) Varistor Voltage (V) Clamping Voltage (V) (yp) 6 ypical Attenuation ange (MHz) 3~(3dB) 6~(3dB) 3

23 EMI/ ESD products 3erminal Capacitor EMI C Array ype 3 EMIC7SANE FEQUENCY(GHz) EMICMANE FEQUENCY(GHz) EMI C Array ype 3 6 EMICNE FEQUENCY(GHz) ESD C Array ype 3 EMIAFNPC FEQUENCY(GHz) EMICSANE FEQUENCY(GHz) EMIC7SAAE FEQUENCY(GHz) EMIA39FNPC FEQUENCY(GHz) EMICSANE FEQUENCY(GHz) EMICMPAC FEQUENCY(GHz) More excellent bypass filter than MCC. EMIC is capacitor type of three terminals and low residual inductance value. Dimensions SIE CODE 3 Part Numbering Feature ower ES Characteristics High Performance at High Frequency ange Small size enables high density mounting Effective noise suppression filter Application EMI C B 73 S A N C () () (3) () () (6) (7) () (9) High frequency EMI prevention applicable to digital equipment such as V, VC, CD monitors and PDP Vs. Computer equipment such as personal computers and peripherals max Equivalent circuit A () Chip EMI Filter of SAMSUNG () C : For signal line P : For Power line (3) Dimensions () Capacitance temperature characteristics C : 3ppm/ A : %(~) B : % (~) F : ~+% (3~+) () Nominal capacitance (: pf, : pf, : pf) (6) Capacitance tolerance (M: %, S: +%,%) (7) ated voltage (P: V, O: 6V, A: V, B: V) () hickness option (N: Standard, A: hinner than standard, B: hicker than standard) (9) Packaging (C: Paper 7 eel, D: Paper 3 eel) B Unit : mm 3erminal Capacitor

24 Diplexer EMIP 6(63) ype EMIPBMONC EMIC () ype EMICB7SBNC EMICB3SBNC EMICFSANC Capacitance (pf) 7 olerance +~% +~% +~% ated Voltage (V) Max. +~% 6 Capacitance (pf) olerance ated Voltage (V) Max. Insulation esistance (M) min min min DC esistance () Max..3.. ated Current (ma). Max min. Insulation esistance (M) DC esistance () Max. ated Current (ma). Max 3 Feature Small and thin size ow Insertion oss ead free Application Applying to mobile phones and wireless AN Combo. AMPS/GPS, AMPS/PCS, CDMA/CDMA, CDMA/SDMB, PCS/SDMB, DMB/CDMA, DMB/KPCS, CDMA/AN, CDMA/KPCS, iden/gps Diplexer is used for separating specific frequency in mobile phones and wireless AN a/b/g. wo kinds of pin assignment demanded on customers are lined up so that designing circuit regardless output direction is available. EMIP () ype Dimensions EMIPFSANC EMIPFOBE Capacitance (pf) olerance +~% +~% ated Voltage (V) Max. 6 Insulation esistance (M) min min DC esistance () Max... ated Current (ma). Max 3 F ype H ype EMIC 36(6) ype EMIC3BMANC EMIC3BSANC Capacitance (pf) olerance +~% +~% ated Voltage Insulation (V) Max. esistance (M) min min DC esistance () Max..3. ated Current (ma). Max 3 Dimension erminal Common ow Band High Band GND Dimension erminal Common ow Band High Band GND Diplexer Pin assignment can be changeable Part Numbering D F 3 () () (3) () () (6) () Diplexer () Dimension (3) Material code () erminal number (F: 6, H: ) () ow band: Band 3 High band: Band (6) Serial number, pin assignment 6 7

25 HHP Diplexer HHP Diplexer Application hickness Center Frequency Insertion oss (db) Max. Min. Application hickness Center Frequency Insertion oss (db) Max. Min. DFAG DFAG DFAP DFAP3 DFEP DFGD3 DFK DDFIG DFCD DFCD DFKD AMPS / GPS AMPS / GPS AMPS / PCS AMPS / PCS EGSM / PCS GSM / DCS KCDMA / CDMA iden / GPS CDMA / SDMB CDMA / SDMB KPCS /SDMB MHz/ 7MHz 9MHz/ 7MHz 9MHz/ 9MHz 9MHz/ 9MHz 9.MHz/ 96MHz.MHz/.MHz 9MHz/ MHz 73.MHz/ 7.MHz 9MHz/ 63MHz 9MHz/ 63MHz MHz/ 6.MHz. at 9MHz.7 at 7MHz. at 9MHz.7 at 7MHz. at 9MHz. at 9MHz. at 9MHz. at 9MHz. at 9.MHz. at 96MHz. at.mhz. at.mhz. at 9MHz.6 at MHz.6 at 73.MHz.7 at 7.MHz. at 9MHz.6 at 63MHz. at 9MHz.6 at 63MHz. at MHz. at 6.MHz at 7MHz at 9MHz at 7MHz at 9MHz at 9MHz at 9MHz at 9MHz at 9MHz at 96MHz at 9.MHz at.mhz at.mhz at MHz at 9MHz 6 at 7.MHz 6 at 63MHz 3 at 79MHz 7 at 73.MHz at 63MHz at 9MHz 7 at 63MHz at 9MHz at 6.MHz at MHz DFK DFCK DFKO DF3 DFCM DHC KPCS / AN CDMA / KPCS KPCS / ibro Band III / Band Cellular /ima AN a/b/g Diplexer ype PF+HPF hickness. MHz/ MHz 9MHz/ MHz MHz/ MHz 7MHz/ 7MHz 36MHz/ 9.MHz Pass Band (MHz) ~ 9~ Insertion oss (db) Max...7. at MHz. at MHz. at 9MHz.7 at MHz. at MHz. at 3MHz. at 7MHz.7 at 7MHz. at 36MHz. at 9.MHz eturn oss (db) Min. at MHz at MHz at 3MHz at 9MHz at 3MHz at MHz at 7MHz at 7MHz at 9.MHz at 36MHz Min. (at MHz) 7 (9~) (~) DFGD DFDK DFC CDMA+GPS /SDMB DMB /KPCS CDMA /AN MHz+ 7.MHz/ 6MHz 7MHz/ MHz 9MHz/ MHz.6 at 9MHz. at 7.MHz. at 6.MHz. at 7MHz.7 at MHz. at 9MHz.6 at MHz at 6.MHz at 9MHz at 7.MHz at MHz at 7MHz at MHz at 9MHz Diplexer 9

26 Characteristics Characteristics 3 DFAG Port_AN Port_O S S3 3 DFAG Port_AN Port_O S S3 3 DFCD Port_AN Port_O S S3 3 DFCD Port_AN Port_O S S3.... FEQUENCY(GHz).... FEQUENCY(GHz) FEQUENCY(GHz) FEQUENCY(GHz) 3 DFAP Port_AN Port_O S S3 3 DFAP3 Port_AN Port_O S S3 DFKD Port_AN Port_O S S3 DFGD Port_AN Port_O S S FEQUENCY(GHz)..... FEQUENCY(GHz) FEQUENCY(GHz) FEQUENCY(GHz) 3 DFEP Port_AN Port_O S S3 3 DFGD3 Port_AN Port_O S S3 3 DFDK Port_AN Port_O S S3 3 DFC Port_AN Port_O S S FEQUENCY(GHz) 3 DFK Port_AN Port_O S S FEQUENCY(GHz) DDFIG Port_AN Port_O S S FEQUENCY(GHz) FEQUENCY(GHz) Diplexer FEQUENCY(GHz)..... FEQUENCY(GHz)

27 C Filter Band pass/ow pass filter Characteristics 3 DFK FEQUENCY(GHz) 3 DFKO Port_AN Port_O S S3 Port_AN Port_O S S3 3 DFCK FEQUENCY(GHz) DF3 Port_AN Port_O S S3 Port_AN Port_O S S3 Feature High Attenuation, ow Insertion oss Small and hin size ead free Application Bluetooth Module AN Module HHPiBro, ima, DMB Ant BPF Bluetooth / AN F end Balun FIC Chip C filter made by our own F design and CC fabrication technology has excellent products with low loss and good attenuation characteristics FEQUENCY(GHz).... FEQUENCY(GHz) 3 DFCM FEQUENCY(GHz) Port_AN Port_O S S3 3 DHC FEQUENCY(GHz) Port_AN Port_O S S3 Part Numbering C B C K () () (3) () () (6) () Chip C Filter () B: Band Pass Filter, : ow Pass Filter (3) Dimension ( :.6x.mm, :.x.mm) () Material code (C, M, ) () Center frequency [MHz] (6) Serial Number C Filter 3

28 Band Pass Filter Dimensions & Frequency Characteristics Band Pass Filter Application b/g B a DMB CB3BA CB3BA3 CBMB CBB CBBS CBBF CBBQ CBBQ3 CBCK CBBK3 CBMA...9 CBGA3 CBGB Pass Band (GHz). ~.. ~.. ~.. ~.. ~.. ~.. ~.. ~.. ~.. ~..9 ~.9.7 ~.37.7 ~.37 I (db) Max VS (db) Min (9~9) (9~9) () () (7~9) (~96) 3 (3) 3 (3) (~96) (~96) 3 (39~) () () Attenuation (db) Min. (at MHz) (~) (~) 3 (f) 3 (f) (7) 3 (7~99) () () (7~99) 6 (f) (f) (7~7) (~9) (~) (~) 3 (f) 3 (f) (36) (36) 6 (f) (3f) 3 (f) 3 (f) (3f) (f) 3 (f) (3f) (3f) S S 3 6 CB3BA Dimension (.. : A3) CB3BA3 3 6 erminal Input Output GND CBBB FEQUENCY(GHz) FEQUENCY(GHz) FEQUENCY(GHz) CBB CBBS ow Pass Filter Application b/g B CB...9 Pass Band (GHz). ~. I (db) Max.. VS (db) Min.. 7 (f) Attenuation (db) Min. (at MHz) (3f) (f) FEQUENCY(GHz) FEQUENCY(GHz) C Filter ibro ima CA ~.7..7 (f) (3f)

29 Dimensions & Frequency Characteristics Band Pass Filter Dimensions & Frequency Characteristics Band Pass Filter 6 Dimension.6+./..+./ (.7max : Q3, Q) erminal Input Output GND Dimension.....7max Input Output GND erminal S S CBBQ FEQUENCY(GHz) CBBQ FEQUENCY(GHz) CBCK FEQUENCY(GHz) S S CBBF FEQUENCY(GHz) Dimensions & Frequency Characteristics Band Pass Filter CBBK FEQUENCY(GHz) CBMA FEQUENCY(GHz) CBMB FEQUENCY(GHz) S S CBGA FEQUENCY(GHz) Dimension CBGB FEQUENCY(GHz) Input Output GND N.C erminal A3 CA B FEQUENCY(GHz) Balun 6 7

30 Appendix Dimensions & Frequency Characteristics ow Pass Filter Soldering Condition Dimension erminal EFO SODEING Input Output BND Soldering emp.() Preheating 7 6 sec. max. Gradual Cooling in the air S S CA CA ime(sec.) FO SODEING FEQUENCY(GHz) FEQUENCY(GHz) Soldering emp.() Preheating 63 sec. max. Gradual Cooling in the air Dimensions & Frequency Characteristics ow Pass Filter Dimension.. Input erminal Preheating emp.() 6(36) and below : max... Output.9. N.C GND sec. min. ime(sec.) SODE ION(Hand Soldering) S S CB Variation of emp.() 3 Soldering emp() 3max Preheating ime(sec) Soldering ime(sec) Cooling ime(sec) attage Condition of Iron Facilities ip Diameter Soldering ime 6 sec. sec. max 3mm max sec max Appendix FEQUENCY(GHz) 9

31 Products in this catalog are recommended using general purpose. For using special purpose like Military, Medical, Aviation, Automobile device should be following a special specification ype P P P D B A.3 E F Card board Embossed ape t max F E P P P D Chip hickness Chip Cavity Quantity / eel (PCS) A B , , Embossed Card , 3 Card , Card , , Unit: mm , /, , , Embossed Embossed Card Card Embossed , , /,.6 (.) , (3,) Embossed , Embossed eel dimensions A B C D Symbol 7" eel 3" eel +/ / E t Symbol 7" eel 3" eel E C A D t B Packaging