2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

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1 . GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE V SINGLE SUPPLY VOLTAGE Gain, Gs (db) UPC7 UPC79 SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC79T and are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = C, f = GHz, VCC = V) PART NUMBER UPC79T PACKAGE OUTLINE T T SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MA MIN TYP MA ICC Circuit Current (no signal) ma GS Small Signal Gain db fu Upper Limit Operating Frequency (The gain at fu is 3 db down from the gain at. GHz) GHz..3.. GS Gain Flatness, f =. ~.8 GHz db ±. f =. ~. GHz ±.8 PSAT Saturated Output Power dbm 9. 3 PdB Output Power at db Compression Point dbm NF Noise Figure db.. RLIN Input Return Loss db 7 9 RLOUT Output Return Loss db 7 3 ISOL Isolation db GT Gain -Temperature Coefficient db/ C RTH Thermal Resistance (Junction to Ambient) C/W California Eastern Laboratories

2 UPC79T, ABSOLUTE MAIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V ICC Total Circuit Current UPC79T ma ma 3 PIN Input Power dbm + PT Power Dissipation mw 8 TOP Operating Temperature C - to +8 TSTG Storage Temperature C - to + RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER UNITS MIN TYP MA VCC Supply Voltage V... TEST CIRCUIT pf VCC Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on x x. mm epoxy glass PWB (TA = +8 C). IN Ω C C3 nh L* C Ω OUT pf, 3, pf TYPICAL PERFORMANCE CURVES (TA = C) 3 CIRCUIT CURRENT vs. VOLTAGE *UPC79T only 3 CIRCUIT CURRENT vs. OPERATING TEMPERATURE VCC =. V Circuit Current, ICC (ma) 3 UPC79T Circuit Current, ICC (ma) 3 UPC79T 3 Supply Voltage, VCC (V) Operating Temperature, C 3 UPC79T GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE 8 3 GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE Gain, GS (db) VCC =. V VCC =. V. V. V. V 7 Noise Figure, NF (db) Gain, GS (db) GP NF VCC =. V VCC =. V VCC =. V VCC =. V VCC =. V VCC =. V 8 Noise Figure, NF (db). V

3 UPC79T, TYPICAL PERFORMANCE CURVES (TA = C) UPC79T INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY VCC =. V INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY VCC =. V Input Return Loss, RLIN (db) Output Return Loss, RLOUT (db) RLIN RLOUT Input Return Loss, RLIN (db) Output Return Loss, RLOUT (db) RLIN RLOUT UPC79T ISOLATION vs. FREQUENCY VCC =. V ISOLATION vs. FREQUENCY VCC =. V - - Isolation, ISOL (db) - -3 Isolation, ISOL (db) UPC79T POWER vs. FREQUENCY POWER vs. FREQUENCY Power (dbm) PdB PSAT Power (dbm) PSAT - VCC =. V..... : Typical SSB Third Order Intercept Point - - PdB VCC =. V..... : Typical SSB Third Order Intercept Point

4 UPC79T, TYPICAL PERFORMANCE CURVES (TA = C) UPC79T AND TEMPERATURE VCC =. V f =. GHz TA = - C TA = C TA = 8 C AND TEMPERATURE VCC =. V f =. GHz TA = +8 C TA = + C TA = - C UPC79T AND VOLTAGE f =. GHz VCC =. V VCC =. V VCC =. V AND VOLTAGE f =. GHz VCC =. V VCC =. V VCC =. V

5 UPC79T, TYPICAL SCATTERING PARAMETERS (TA = C) UPC79T VCC = V, ICC = ma FREQUENCY S S S S K S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCC = V, ICC = ma FREQUENCY S S S S K S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) Note:. K factor calculations: K = + - S - S S S, = S S - S S

6 UPC79T, EQUIVALENT CIRCUIT UPC79T OUTLINE DIMENSIONS (Units in mm) UPC79T/ PACKAGE OUTLINE T LEAD CONNECTIONS (Top View) (Bottom View) ± CE.9± INPUT. GND 3. GND. OUTPUT. GND. VCC Note: Package Markings CIE-UPC79T CIH ±. RECOMMENDED P.C.B. LAYOUT (Units in mm) 3. to. Note: All dimensions are typical unless otherwise specified. 3.9 ORDERING INFORMATION PART NUMBER QTY UPC79T-E3 -E3 3K/Reel 3K/Reel. MIN Embossed Tape, 8 mm wide.. MIN. MIN ECLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-87 (8) Telex 3-393/FA (8) DATA SUBJECT TO CHANGE WITHOUT NOTICE

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