Si Photo-transistor ChipTKA124PT Ambient Light Sensor 1. Scope The specification applies to NPN silicon photo-transistor chips. TypeTKA124PT-L-8-N. (Ambient Light) 2. Structure NPN planar type. 3. Size Electrode Ncollectorside Gold. Pbaseside Aluminum Nemitterside Aluminum. Chip size 24 mil 24 mil (0.60 mm 0.60 mm) Thickness 8 mil (0.203 mm) Emission area 17 mil 17 mil (0.43 mm 0.43 mm) Pattern drawing per fig.1 4. Electro-Optical Characteristics Ta=+25 Parameter Symbol Condition Min. Typ. Max Unit Dark Current ICEO VCE=7V 35 na Collector-Emitter Saturation Voltage VCE(Sat) IB=100uA, IC=2mA 0.1 0.4 V Collector-Emitter Breakdown Voltage BVCEO ICEO=100A 60 V Emitter-Collector Breakdown Voltage BVECO IECO=100A 3 V Photocurrent VCE=5V, Ev=1000 lux 2 ma DC Current Amplification Factor hfe VCE=5 V, IC=2mA 200 2500 Tungsten/Fluorescent VCE=5V, Ev=2000 lux 2.4 Peek of sensitivity 630 nm NotehFE SpecA(100-200)B(200-350)C(400-600)D(500-700)E(600-1100)F(900-1400) H(1200-1800)G(1600-2500) Active Area Emitter Base Emitter 17 24 N+ N N+ P 8 17 24 Base Collector 24 Unitmil fig. 1 2007.Nov TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
5.Relative Spectral Responsivity 2007.Nov TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
Si Photo-diode ChipTKG130PDN-L1 Ambient Light Sensor (Preliminary) 1. Scope The specification applies to PIN silicon photo-diode chips. Type : TKG130PDN-L1. 2. Structure PIN planar type. Electrode topside (anode) Aluminum. Electrode backside (cathode) Gold alloy. 3. Size Chip size : 130 mil 130 mil, 0.5mil ( 3.300mm 3.300mm, 0.013mm ) Thickness : 12mil 1mil ( 0.300mm 0.025mm ) Active area : 122 mil 122 mil ( 3.100mm 3.100mm ) Pattern drawing : per fig. 1 4. Electro-Optical Characteristics (Ta = +25 ) Parameter Symbol Condition Min. Typ. Max. Unit. Forward Voltage V F I F =10mA, H=0 0.5 1.3 V Reverse Breakdown Voltage V BR I R =100µA, H=0 35 V Reverse Dark Current I D V R =5V, H=0 10 na Peak Sensing Wavelengh p Note nm Junction Capacitance C J V R =3V, F=1 MHz 30 pf NoteD RankTyp.=850nm I RankTyp.=550nm R 4 Anode 122 130 P I N 12 122 130 Cathode Unitmil fig. 1 2010 Jan. TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
5. Spectral Response 2010 Jan. TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
Si Photo-transistor ChipTKI124PT Sunlight Sensor 1. Scope 2. Structure The specification applies to NPN silicon photo-transistor chips. TypeTKI124PT. For Sunlight detector. NPN planar type. Electrode Ncollectorside Gold. Pbaseside Aluminum. Nemitterside Aluminum. 3. Size Chip size 24 mil 24 mil (0.60 mm 0.60 mm) Thickness 8 mil (0.200 mm) Emission area 17 mil 17 mil (0.43 mm 0.43 mm) Pattern drawing per fig.1 4. Electro-Optical Characteristics Ta=+25 Parameter Symbol Condition Min. Typ. Max Unit Dark Current ICEO VCE=5V, E=0 50 na Collector-Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1 ma 0.1 0.4 V Collector-Emitter Breakdown Voltage BVCEO ICEO=100A 10 V Emitter-Collector Breakdown Voltage BVECO IECO=100A 1.5 V DC Current Amplification Factor hfe VCE=5 V, IC=2mA 200 2500 Peek of sensitivity 550 nm Active Area Emitter Base Emitter 17 24 N+ N N+ P 8 17 24 Base Collector 24 Unitmil fig. 1 2008. July TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
5. Relative Responsivity 2008. July TYNTEK Head Office Tel886-3-5781616 Fax886-3-5780545 TYNTEK Chunan Branch Tel886-37-582997 Fax886-37-582908 http//www.tyntek.com.tw E-mailservice@serv.tyntek.com.tw
Color Sensor (3 in 1)
S Si Photo-diode Chip ---TK 120PD 1. Scope The specification applies to PIN silicon photo-diode chips. Type : TK 120PD. Enhanced UV (Preliminary) 2. Structure PIN planar type. 3. Size Electrode topside (anode) : Aluminum. Electrode backside (cathode) : Gold alloy. Chip size : 120 mil 120 mil (3.05 mm 3.05 mm) Thickness : 16 mil (0.41 mm) Active area : 102 mil 102 mil (2.59 mm 2.59 mm) Pattern drawing : per fig. 1 4. Electro-Optical Characteristics (Ta = +25 ) Parameter Symbol Condition Min. Typ. Max. Unit. Forward Voltage V F I F =10 ma, H=0 0.5 1.3 V Light Current I L V R =5V, H=5 mw/cm 2 50 μa Reverse Dark Current I D V R =10V, H=0 2 10 na Reverse Breakdown Voltage V BR I R =100μA, H=0 35 V Junction Capacitance C J V R =3V, H=0, F=1 MHz 25 40 pf U Grade For 375nm UV enhance 5. Application IR remote control module PIN diode. 102 Anode Anode 102 120 8 120 Cathode P I N+ 120 12 Unit:mil fig. 1. TYNTEK Head Office Tel:886-3-5781616 Fax:886-3-5780545 TYNTEK Chunan Branch Tel:886-37-582997 Fax:886-37-582908 http://www.tyntek.com.tw E-mail:service@serv.tyntek.com.tw
5.Relative Spectral Responsivity TK120PD-L U Grade 100% Relative Responsivity (%) 80% 60% 40% 20% 0% 350 500 650 800 950 1100 Wavelength (nm) TYNTEK Head Office Tel:886-3-5781616 Fax:886-3-5780545 TYNTEK Chunan Branch Tel:886-37-582997 Fax:886-37-582908 http://www.tyntek.com.tw E-mail:service@serv.tyntek.com.tw