MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

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1 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO- MIN.8 (.) MAX.(.8) MIN.8 (.) MAX φ.9 (.) Cathode band MAX φ. (.) Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGE: (Ta= ) Parameter Symbols Limits Unit Power Dissipation at Tamb= Ptot () mw Maximum Junction Temperature Tj Storage Temperature Range Tstg -~+ Symbols Min Typ Max Unit Thermal Resistance Junction to Ambient Air RthJA - - () /W Forward Voltage at IF= VF - -. Volts Notes. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature :. Tested with pulse tp=ms. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. Standard zener voltage tolerance is ±%. Add suffix A for ±% tolerance. Suffix B for±% tolerance.. At Iz =. 6. At Iz =..

2 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () at MAX MIN MA VR(V MAX MZO.GFV- V-. Izt() X A) 8. MZO.GFV- V-.. 9 MZO.GFV- V MZO.GFV- V MZO.GFV- V MZO.GFV- V MZO.GFV6- V MZO.GFV9- V MZO.GFV- V MZO.GFV- V MZO.GFV- V MZO.GFV6- V MZO.GF6V- 6V MZO.GF6V- 6V MZO.GF6V8-6V MZO.GFV- V MZO.GF8V- 8V MZO.GF8V- 8V MZO.GF9V- 9V MZO.GFV- V MZO.GFV- V MZO.GFV- V MZO.GFV-9. V MZO.GFV-9. V MZO.GFV-8. V MZO.GF6V-.8 6V MZO.GFV-. V MZO.GF8V-. 8V MZO.GF9V-6.6 9V MZO.GFV-6. V MZO.GFV-.6 V MZO.GFV-. V MZO.GFV-. V MZO.GFV-.6 V MZO.GF8V-. 8V MZO.GFV-. V MZO.GFV-.8 V MZO.GF6V-. 6V MZO.GF9V-. 9V MZO.GFV- V MZO.GFV-. V MZO.GFV-. V MZO.GF6V-. 6V MZO.GF6V-. 6V MZO.GF6V-. 6V MZO.GF68V-.8 68V MZO.GFV-. V IZT(Ma)

3 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () MAX MIN M VR(V MAX MZ.GFV V. A A). MZ.GFV V.. MZ.GFV V. 8. MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV6 V MZ.GFV9 V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV6 V MZ.GF6V 6V MZ.GF6V8 6V MZ.GFV V MZ.GF8V 8V MZ.GF9V 9V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GF6V 6V MZ.GF8V 8V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GF6V 6V MZ.GF9V 9V MZ.GFV V MZ.GFV V MZ.GFV V MZ.GF6V 6V 6 6( ) (6) (). MZ.GF6V 6V 6 8 () (6) (). 6 MZ.GF6V 6V 6 () (6) (). MZ.GF68V 68V 68 () 6 (6) (). MZ.GFV V 8 () (6) (). 6 IZT(Ma)

4 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV Breakdown characteristics Tj=constant(pulsed) Tj= V V9 V6 6V8 V V /Z 8V Test Current/z V Vz V V Tj= V /Z 8V V V Test Current/z V V Vz

5 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV mw Admissible power dissipation versus ambient temperature Valid provided that leads are kept ambient temperature at a distance of 8mm from case pf Capacitance voltage TJ= Ptot Ctot V R =V V R=V V R =V V R=V K/W rtha Tamb Pulse thermal resistance versus pulse duration Valid provided that leads are kept ambient temperature at a distance of 8mm from case V= - - tp - tp V = T T - P s Z ZK Ω. Dynamic resistance versus current V Z AT I Z = TJ= Vz=. V tp I Z

6 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV Z ZK Ω Dynamic resistance versus current Vz= V TJ= r zth K/W Thermal differential resistance versus voltage Valid provided that leads are kept at ambient temperature at a distance of 8mm from case r Vz zth=rtha. Vz T j 8. I Z 6.8/ negative positive V V Z at I Z = Ω Dynamic resistance versus current K/W Thermal resistance versus lead length Z ZK R tha Max. Typ. V T J= IZ= VZ at I Z= lead length / mm

7 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV mv/k Temperature dependance of voltage versus voltage V.6 Change of voltage from turn-on up to the point of thermal equilibrium versus voltage. Vz=rzth. Iz Iz= Vz T j Iz= Vz V.8. Vz at Iz= Change of voltage versus junction temperature Vz at Iz= V -. Vz at Iz= V.6 Vz T j

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MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage

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