MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
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1 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage smaller Voltage tolerances and other zener voltages are Available upon request. High Reliability MINI-MELF glass case(sod-8) Weight: Approx..g MINI MELF.(.6).(.).6(.6).(.).9(.8).(.8) Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGE: (Ta= ) Parameter Symbols Limits Unit Power Dissipation at Tamb= Ptot () mw Maximum Junction Temperature Tj Storage Temperature Range Tstg -~+ Symbols Min Typ Max Unit Thermal Resistance Junction to Ambient Air RthJA - - () /W Forward Voltage at IF=mA VF - -. Volts Notes. Valid provided that electrodes are kept at ambient temperature.. Tested with pulse tp=ms.. At Iz =.ma. At Iz =.ma.
2 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () at MAX MIN MA VR(V MAX MZO.GNV- V-. Izt(mA) X A) 8. MZO.GNV- V-.. 9 MZO.GNV- V MZO.GNV- V MZO.GNV- V MZO.GNV- V MZO.GNV6- V MZO.GNV9- V MZO.GNV- V MZO.GNV- V MZO.GNV- V MZO.GNV6- V MZO.GN6V- 6V MZO.GN6V- 6V MZO.GN6V8-6V MZO.GNV- V MZO.GN8V- 8V MZO.GN8V- 8V MZO.GN9V- 9V MZO.GNV- V MZO.GNV- V MZO.GNV- V MZO.GNV-9. V MZO.GNV-9. V MZO.GNV-8. V MZO.GN6V-.8 6V MZO.GNV-. V MZO.GN8V-. 8V MZO.GN9V-6.6 9V MZO.GNV-6. V MZO.GNV-.6 V MZO.GNV-. V MZO.GNV-. V MZO.GNV-.6 V MZO.GN8V-. 8V MZO.GNV-. V MZO.GNV-.8 V MZO.GN6V-. 6V MZO.GN9V-. 9V MZO.GNV- V MZO.GNV-. V MZO.GNV-. V MZO.GN6V-. 6V MZO.GN6V-. 6V MZO.GN6V-. 6V MZO.GN68V-.8 68V MZO.GNV-. V IZT(Ma)
3 MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () MAX MIN M VR(V MAX MZ.GNV V. A A). MZ.GNV V.. MZ.GNV V. 8. MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV6 V MZ.GNV9 V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV6 V MZ.GN6V 6V MZ.GN6V8 6V MZ.GNV V MZ.GN8V 8V MZ.GN9V 9V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GN6V 6V MZ.GN8V 8V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GN6V 6V MZ.GN9V 9V MZ.GNV V MZ.GNV V MZ.GNV V MZ.GN6V 6V 6 6( ) (6) (). MZ.GN6V 6V 6 8 () (6) (). 6 MZ.GN6V 6V 6 () (6) (). MZ.GN68V 68V 68 () 6 (6) (). MZ.GNV V 8 () (6) (). 6 IZT(Ma)
4 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV Breakdown characteristics Tj=constant(pulsed) ma Tj= V V9 V6 6V8 V V /Z 8V Test Current/z ma V Vz ma V V Tj= V /Z 8V V V Test Current/z ma V V Vz
5 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV mw Admissible power dissipation versus ambient temperature Valid provided that leads are kept ambient temperature at a distance of 8mm from case pf Capacitance voltage TJ= Ptot Ctot V R =V V R=V V R =V V R=V K/W rtha Tamb Pulse thermal resistance versus pulse duration Valid provided that leads are kept ambient temperature at a distance of 8mm from case V= - - tp - tp V = T T - P s Z ZK Ω. Dynamic resistance versus current V Z AT I Z =ma TJ= Vz=. V ma tp I Z
6 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV Z ZK Ω Dynamic resistance versus current Vz= V TJ= r zth K/W Thermal differential resistance versus voltage Valid provided that leads are kept at ambient temperature at a distance of 8mm from case r Vz zth=rtha. Vz T j 8. I Z 6.8/ ma negative positive V V Z at I Z = ma Ω Dynamic resistance versus current K/W Thermal resistance versus lead length Z ZK R tha Max. Typ. T J = IZ=mA V mm VZ at I Z=mA lead length /
7 MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV mv/k Temperature dependance of voltage versus voltage V.6 Change of voltage from turn-on up to the point of thermal equilibrium versus voltage. Vz=rzth. Iz Iz=mA Vz T j Iz= ma ma ma Vz V.8. Vz at Iz=mA Change of voltage versus junction temperature Vz at Iz=mA V -. Vz at Iz= ma V.6 Vz T j
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
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Διαβάστε περισσότεραMetal Oxide Leaded Film Resistor
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Διαβάστε περισσότεραNo Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
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Διαβάστε περισσότεραCSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
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Διαβάστε περισσότεραYJM-L Series Chip Varistor
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Διαβάστε περισσότεραSunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
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Διαβάστε περισσότεραRoHS Y TR. Zero power resistance Max. current Residual resistance Recommend capacitance Part number
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Διαβάστε περισσότεραCurrent Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of
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