NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
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- Πολύδωρος Γάννης Αξιώτης
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1 SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db at GHz EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications PLEASE NOTE: The following part numbers from this datasheet are not recommended for new design. Please call sales office for details: NE680 NE6809R up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high ft makes it ideal for low voltage/low current applications, down to as low as 0. V / 0. ma. IC max for the NE680 series is ma. For higher current applications see the NE68 series. NF (db) Noise Figure, NE6808 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 6V, ma V, ma 0 0 A ssociated Gain, G A (db ) B E 00 (CHIP) (MICRO-X) 8 (SOT STYLE) 9 ( PIN ULTRA SUPER MINI MOLD) 0 (SOT STYLE) (SOT STYLE) 9 (SOT STYLE) 9R (SOT R STYLE) Frequency, f (GHz) California Eastern Laboratories
2 ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE68000 NE6808 NE6809 EIAJ REGISTERED NUMBER SC0 SC008 PACKAGE OUTLINE 00 (CHIP) 8 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 6 V, IC = 0 ma GHz NF Noise Figure at VCE = 6 V, IC = ma, f = GHz db.6.7 f = GHz db f = GHz db.6 GNF Associated Gain at VCE = 6 V, IC = ma, f = GHz db. f = GHz db f = GHz db 8 MAG Maximum Available Gain at VCE = 6 V, IC = 0 ma f = GHz db f = GHz db f = GHz db SE Insertion Power Gain at VCE = 6 V, IC = 0 ma, f = GHz db 7. f = GHz db f = GHz db hfe Forward Current Gain at VCE = 6 V, IC = 0 ma VCE = V, IC = ma ICBO Collector Cutoff Current at VCB = 0 V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa CRE Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (Junction to Ambient) C/W RTH (J- C) Thermal Resistance (Junction to Case) C/W ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE6800 NE680 NE680 NE6809/9R EIAJ REGISTERED NUMBER SC8 SC8 SC87 SC09 PACKAGE OUTLINE 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 6 V, IC = 0 ma GHz NF Noise Figure at VCE = 6 V, IC = ma, f = GHz db..6 f = GHz db f = GHz db GNF Associated Gain at VCE = 6 V, IC = ma, f = GHz db..0 f = GHz db f = GHz db MAG Maximum Available Gain at VCE = 6 V, IC = 0 ma f = GHz db f = GHz db f = GHz db SE Insertion Power Gain at VCE = 6 V, IC = 0 ma, f = GHz db. 7. f = GHz db f = GHz db hfe Forward Current Gain at VCE = 6 V, IC = 0 ma VCE = V, IC = ma ICBO Collector Cutoff Current at VCB = 0 V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa Cre Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf VCE = 0 V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (Junction to Ambient) C/W RTH (J- C) Thermal Resistance (Junction to Case) C/W Notes:. Electronic Industrial Association of Japan.. Pulsed measurement, PW 0 µs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the terminal capacitance bridge.
3 ABSOLUTE MAXIMUM RATINGS (TA = C) DC POWER DERATING CURVES SYMBOLS PARAMETERS UNITS RATINGS 00 VCBO Collector to Base Voltage V 0 VCEO Collector to Emitter Voltage V 0 VEBO Emitter to Base Voltage V. IC Collector Current ma TJ Junction Temperature C 0 TSTG Storage Temperature C -6 to +0 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Maximum TJ for the NE680 is 00 C. Total Power Dissipation, PT (mw) NE680 NE6809 NE6809 NE Ambient Temperature, TA ( C) TYPICAL PERFORMANCE CURVES (TA = C) NE680 INSERTION GAIN vs. COLLECTOR CURRENT NE680 INSERTION GAIN vs. COLLECTOR CURRENT Insertion Gain, S (db) Maximum Available Gain, MAG (db) Insertion Gain, S (db) S MAG VCE = 6 V f = GHz f = GHz f = GHz Collector Current, IC (ma) NE6809 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY Insertion Gain, S (db) Insertion Gain, S (db) Maximum Available Gain, MAG (db) NE680 VCE = 6 V f = GHz Collector Current, IC (ma) NE680 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY S VCE = 6 V IC = 0 ma MAG Frequency, f (GHz) Frequency, f (GHz)
4 TYPICAL PERFORMANCE CURVES (TA = C) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT NE680 NOISE FIGURE vs. COLLECTOR CURRENT DC Forward Current Gain, hfe VCE = 6 V Noise Figure, NF (db) VCE = 6 V f = GHz Collector Current, IC (ma) Collector Current, IC (ma) NE680 NOISE FIGURE vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Noise Figure, NF (db) f = GHz f = GHz VCE = 6 V Gain Bandwidth Product, ft (GHz) 0 7 VCE = 6 V Collector Current, IC (ma) Collector Current, IC (ma) COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Collector to Base Capacitance, COB (pf) NE680 NE Collector to Base Voltage, VCB (V)
5 NE6808 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = V, IC = ma VCE = 6 V, IC = ma NE6809 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = V, IC = ma VCE = 6 V, IC = ma NE680 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 6 V, IC = ma NE6800 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma NE680 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma NE6809 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma
6 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S GHz S GHz -. S 0. GHz - - S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) 80 S GHz S 0. GHz. S 0. GHz S GHz 0 NE6808 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = ma Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S GHz S 0 0. GHz S 0. GHz S GHz S 0. GHz S 0. GHz 0. S GHz S GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma). 70 NE6809 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = ma Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
8 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S GHz. S 0. GHz S GHz S GHz S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) 80 S GHz S 0. GHz. 70 S 0. GHz 0. 0 NE6800 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = 0 ma Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
9 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 0. GHz S GHz NE680 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma S GHz -. S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) 80 S GHz 90 S 0. GHz. 70 S GHz S 0. GHz VCE = 6 V, IC = 0 ma Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
10 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C). -. NE680 VCE = 6 V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 6 V, IC = 0 ma VCE = 6 V, IC = 0 ma S GHz S 0 0. GHz S GHz S 0. GHz Coordinates in Ohms Frequency in GHz (VCE = 6 V, IC = ma) S GHz 90 S GHz S 0. GHz 0 70 S GHz 0 Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
11 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C). -. (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 6 V, IC = ma VCE = 6 V, IC = 0 ma S 6 GHz S 0 0. GHz S 0. GHz S 6 GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) S 6 GHz 90 S 0. GHz 70 S 6 GHz S 0. GHz NE6809 VCE =. V, IC = ma FREQUENCY S S S S K MAG 0. 0 Note:.Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
12 NE6808 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB LC CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0.6 CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 6808 CCB 0.08e- CCE 0.08e- LB.8e-9 LC.e-9 LE 0.8e-9 CCBPKG 0.e- CCEPKG 0.8e- CBEPK 0.9e- LBX 0.8e-9 LCX 0.7e-9 LEX 0.09e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = V to 6 V, IC = ma to ma Date: //96
13 NE6809 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB CCE LCX Collector LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 6809 CCB 0.08e- CCE 0.08e- LB 0.7e-9 LE 0.76e-9 CCBPKG 0.7e- CCEPKG 0.e- LBX 0.9e-9 LCX 0.9e-9 LEX 0.9e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = V to 6 V, IC = ma to ma Date: 8/0
14 NE6800 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 6800 CCB 0.08e- CCE 0.08e- LB 0.7e-9 LE e-9 CCBPKG 0.e- CCEPKG 0.6e- CBEPKG 0.0e- LBX 0.e-9 LCX 0.e-9 LEX 0.e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 6 V, IC = ma to ma Date: 0//96
15 NE680 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 680 CCB 0.08e- CCE 0.08e- LB 0.6e-9 LE 0.9e-9 CCBPKG 0.e- CCEPKG 0.e- CBEPKG 0.0e- LBX 0.e-9 LCX 0.e-9 LEX 0.e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 6 V, IC = 0. ma to 0 ma Date: 7/97 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
16 NE680 NONLINEAR MODEL SCHEMATIC CCB_PKG Q 0.pF BASE RB_PKG 0. ohms LB_PKG 0.nH LB 0.nH 0.07pF CCB 6800 LC 0.96nH CCE 0.0pF LC_PKG 0.nH RC_PKG 0. ohms COLLECTOR CCE_PKG CBE_PKG 0.0pF LE_PKG 0.8nH 0.pF CBEX_PKG RE_PKG 0. ohms CCEX_PKG 0.pF EMITTER 0.pF BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = 6 V, IC = ma to 0 ma Date: 0//96 () Gummel-Poon Model
17 OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 60 µm) PACKAGE OUTLINE (MICRO-X) E 0.± ±0.06 C.8 MIN ALL LEADS B BASE EMITTER 0φ ± E.±0. φ. PIN CONNECTIONS.Collector. Emitter. Base. Emitter.8 MAX 0..0 ± 0. PACKAGE OUTLINE 8 PACKAGE OUTLINE 8 RECOMMENDED P.C.B. LAYOUT. ± 0.. ± (LEADS,, ) ± 0. PIN CONNECTIONS. Collector. Emitter. Base. Emitter. 0 to ± PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT.6 ± ± LEAD ONLY ± PIN CONNECTIONS. Emitter. Base. Collector to PACKAGE OUTLINE 0. ± 0.. ± 0. PACKAGE OUTLINE 0 RECOMMENDED P.C.B. LAYOUT.0 ± (ALL LEADS) ± 0. MARKING PIN CONNECTIONS. Emitter. Base. Collector to
18 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE (SOT-) ± (ALL LEADS) PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT.. to to PIN CONNECTIONS. Emitter. Base. Collector PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT (LEADS,, ) ± PIN CONNECTIONS. Collector. Emitter. Base. Emitter to 0. PACKAGE OUTLINE 9R PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT ± to (LEADS,, ) PIN CONNECTIONS. Emitter. Collector. Emitter. Base.9.0.0
19 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE Waffle Pack NE6808-T-A 000 Tape & Reel NE6809-T-A 000 Tape & Reel NE6800-T-A 000 Tape & Reel NE680-TB-A 000 Tape & Reel NE680 ESD Bag NE6809-T-A 000 Tape & Reel NE6809R-T 000 Tape & Reel Note:. Lead material: Cu Lead plating: SnBi -.%Bi Typ. 08/0/00-8
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DATA SHEET SILICON TRANSISTOR NE68519 / 2SC51 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE68519 / 2SC51 is an NPN epitaxial silicon transistor designed
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
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Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
High Frequency Ceramic Inductors TLNMH0603P Series
(1/5) High Frequency Ceramic Inductors Features High Q inductors for high frequency applications Multilayer Ceramic Optimal configuration for improved Q to 800MHz or higher 0.1nH step inductance values
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
NPIS Shielded Power Inductors
FEATURES SHIELDED POWER INDUCTOR ULTRA LOW PROFILE (1.0 ~ 4.5mm MAX. HEIGHT) SURFACE MOUNTABLE CONSTRUCTION INDUCTANCE VALUES UP TO 220µH TAPED AND REELED FOR AUTOMATIC INSERTION CHARACTERISTICS Case Size
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
SMD Power chokes- SPD Series SPD series chokes For High Current Use
SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
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Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
+85 C General Purpose Miniature Aluminum Capacitors
+85 C General Purpose Miniature Aluminum Capacitors Features- Increased CV Efficiency Non Polar Design Available (Special Order) General Specifications- Operating Temperature: -40 to +85 C Voltage Range:
Aluminum Capacitors C, Tubular, Radial Lead
Aluminum Capacitors + 105 C, Tubular, Radial Lead FEATURES Wide temperature range Radial design in two and three lead configuration Ideal SMPS output filter PERFORMANCE CHARACTERISTICS Operating Temperature:
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Operating Temperature Range ( C) ±1% (F) ± ~ 1M E-24 NRC /20 (0.05) W 25V 50V ±5% (J) Resistance Tolerance (Code)
FEATURES EIA STANDARD SIZING 0201(1/20), 0402(1/16), 0603(1/10), 0805(1/8), 1206(1/4), 1210(1/3), 2010(3/4) AND 2512(1) METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE..(CERMET) PROVIDES UNIFORM
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
APPLICATIONS TECHNOLOGY. Leaded Discs N.03 N.06 N.09
NC Disc hermistors ND 03/06/09 NE 03/06/09 NV 06/09 APPLICAIONS ND or NE: Commerical, Industrial and Automotive Applications AEC-Q200 Qualified NV: Professional Applicationsl Alarm and temperature measurement
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
Output Power: W. Exclusively distributed by Powerstax
R Series, 50-150W Input Ranges : 9-75 VDC : Single - Dual /, / /, / Triple / ±, /, / ±0, Quad ± / ±, ± / : 50-150 W FEATURES General: to 100 Watts Wide Input Range : 10-7dc 2:1 & 3:1 Input Range High Conversion
DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS. March 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 File under Discrete Semiconductors, SC14 March 1994 Philips Semiconductors FEATURES DESCRIPTION High power gain Gold metallization ensures
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
Symbol. Parameter Value Unit. IPP See Next Table A IFSM
5W Transient Suppressor.5KE-HF Series Stand-off : 6.8 ~ 6V Power Dissipation: 5 Watts RoHS Device Halogen Free Features -Glass passivated chip. -Low leakage. -5W peak pulse power capability with a /μs
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
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TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
Si Photo-transistor Chip TKA124PT
Si Photo-transistor ChipTKA124PT Ambient Light Sensor 1. Scope The specification applies to NPN silicon photo-transistor chips. TypeTKA124PT-L-8-N. (Ambient Light) 2. Structure NPN planar type. 3. Size
Surface Mount Multilayer Inductor
FETURES 0603, 0805, 0806 ND 1008 CSE SIZES HIGH CURRENT ND LOW RESISTNCE NEW "S" VERSION FOR INCRESED STURTION CURRENT UGRDED "H" VERSION FOR HIGHEST CURRENT REFLOW SOLDERING LICBLE CKGE FOR UTOMTIC ICKLCE