00 Ver. Transistor New Products MOS FET Series Low VCE(sat) Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series
MOS FET TUMT/TSMT Series Application Notebook PC Features Mobile Phone Realizes low ONstate resistance with even compact packages. Offers a lineup of compound products combining two elements with the downsizing of the packages attained, thus contributing to the highdensity mounting of the packages. Offers a lineup of easytouse compound products with Schottky Barrier Diode for power supply applications. DVC Suitable for Portable equipment Portable MD/CD/HDD Player TSMT TUMT.9.0 Conventional package SMT3.8 Conventional package UMT3. same size same size.9.0 New package TSMT6.8 New package TUMT6. Low RDS(on) High package power 3m 0.W Low RDS(on) High package power 3m 0.W Reduced to /0 Power 6. times as high Reduced to /0 Power times as high m.w Low ONstate resistance reduced to Provides power 6. times as high in a pacge /0 of the conventional value the same in size. * x tmm ( With a ceramic PCB used) 3m.0W Low ONstate resistance reduced to /0 of the conventional value Provides power times as high in a pacge the same in size. * x tmm ( With a ceramic PCB used)
Drive Voltage:4V Series Note) Internal circuit:p.9 * RDS(on) (mω) * VDSS ID Qg (V) (A) Typ. Max. (nc) RSF04N03 Single Fig..4 70.4 US6K Dual Fig. RSQ03N03 3. 44 6.3 Single Fig. RSQ04N03 4. 7 38 6.8 TUMT3 TUMT6 TSMT6 *:VGS=0V *:VGS=V VDSS ID RDS(on) (mω) * * Qg (V) (A) Typ. Max. (nc) TUMT3 RSF00P03 3.9 RSR0P03. 70 3.6 TSMT3 RSR00P03 8 0 4.3 Fig.0 RSR0P03 Single 70 98.4. RSQ0P03 80 0 4.9 TSMT6 RSQ0P03 RSQ03P03 3 3. 4 80 6 6 9 Fig. 9 *:VGS=0V *:VGS=V VDSS(V) ID(A) RDS(on) (mω) / VF(V) Qg(nC) VR(V) IO(A) Typ. Max. MOS. 70 40.6 USU SBD 0 0.36 TUMT Fig. 8 MOS.4 70 40.4 USU SBD 0 0.36 VDSS(V) ID(A) RDS(on) (mω) / VF(V) Qg(nC) VR(V) IO(A) Typ. Max. MOS 0 400.7 TSMT6 QS6U4 Fig. SBD 0 9 RDS(on) (mω)* * VDSS ID Qg (V) (A) Typ. Max. (nc) Nch.4 70 40.4 TUMT6 US6M Fig. 6 Pch 0 80 390. *:VGS=0V *:VGS=V
MOS FET Drive Voltage:.V Series Note) Internal circuit:p.9 RDS(on) (mω) * * VDSS ID Qg (V) (A) Typ. Max. (nc) TUMT3 TUMT6 TUMT TUMT6 TSMT3 TSMT6 TSMT RTF0N03 RTF0N03 RTL03N03 USK3 US6K RTR0N03 RTR040N03 RTQ00N03 RTQ03N03 RTQ04N03 QS6K QSK Single Dual Single Dual.. 3... 4 3. 4. 70 48 3 70 66 34 89 38 70 7 40 67 6 40 9 48 4 43 38 00.6 3.7 4.6.6 3.3.9.4 7.6.7.8 Fig. Fig. Fig. 4 Fig. Fig. Fig. Fig. 3 Fig. 4 *:VGS=4.V *:VGS=4.V VDSS ID RDS(on) (mω) * Qg * (V) (A) Typ. Max. (nc) RTF00P0. 80 390 RTF0P0. TUMT3 Fig. 0 RTF0P0. 00 3. Single RTF00P0 8 7 RTL00P0 00 3 4.9 Fig. 9 TUMT6 RTL0P0 3 70 8 US6J Dual 80 390. Fig. RTR00P0 00 3 4.9 0 TSMT3 RTR0P0. 70 9 7 Fig. 0 RTR0P0 3 7 9.3 RTQ0P0 Single. 7 00 7.0 RTQ0P0 3 80 9.3 Fig. 9 RTQ03P0 3. 6 TSMT6 RTQ040P0 4 3. QS6J Fig. Dual. 3 QS6J3 Fig. *:VGS=4.V *:VGS=4.V 3 RDS(on) (mω) / VF(V) * VDSS(V) ID(A) Qg * VR(V) IO(A) Typ. Max. (nc) MOS. 70 40.6 TUMT USU3 Fig. 8 SBD 0 9 MOS 7 00.8 QSU SBD 0 Fig. 7 MOS 7 00.8 QSU3 SBD 0 0.36 TSMT MOS 7 00.8 QSU6 SBD 0 0.36 Fig. 8 MOS 7 00.8 QSU7 SBD 0 *:VGS=4.V *:VGS=4.V
Drive Voltage:.V Series Note) Internal circuit:p.9 * VDSS(V) ID(A) RDS(on) (mω) / VF(V) * Qg VR(V) IO(A) Typ. Max. (nc) TUMT USU9 MOS 80 390. SBD 9 USU MOS 80 390. SBD 0.36 Fig. 4 MOS. 00 4. QSU SBD Fig. 3 MOS. 00 4. QSU3 SBD 0.36 0 MOS. 00 4. TSMT QSU6 SBD TSMT6 QSU7 QSU8 QS6U MOS MOS MOS.. 90 00 4. 3 SBD SBD SBD 9 Fig. 4 Fig. *:VGS=4.V *:VGS=4.V * VDSS ID RDS(on) (mω) Qg * (V) (A) Typ. Max. (nc) Nch. 70 40.6 TUMT6 US6M Fig. 6 Pch 0 80 390. Nch 70.7 QS6M3 Fig. 7 Pch 0 3 TSMT6. Nch 70.7 QS6M4 Fig. 6 Pch 0 3 *:VGS=4.V *:VGS=4.V 4
MOS FET SOP8 Features Low RDS(on) Low Qg High ESD capability Dense mounting Low power consumption Fast switching speed Failure reduction Two elements in one package Ideal for DC/DC converter and power management SW. Meets the key needs of MOSFET in power supply DC/DC converter. Notebook PC Example of application circuit Vcc Power to Peripheral devices Power Management control IC Vcc M Power Management Motor Drive Drive Voltage:4V Note) Internal circuit:p.0 * VDSS ID RDS(on) (mω) * Qg (V) (A) Typ. Max. (nc) RSS06N03 RSS090N03 RSS00N03 RSS0N03 RSS0N03 RSS0N03 Single 6. 9 0 9 9. 8. 7.6 7. 7 6 3.3.9 0 6. 4 7 8 Fig. 8 SOP8 RSSN03. 6. 9. 0 RSSN03 3.9 8.3 RSS40N03 SP8K SP8K SP8K SP8K3 SP8K4 Dual 4 3. 6 7 9 4.9 9 36 7 6.9 83 4 7 37. 3.9 7. 8.4 Fig. 9 *:VGS=0V *:VGS=V * RDS(on) (mω) * VDSS ID Qg (V) (A) Typ. Max. (nc) RSS040P03 4 4 8 8.0 RSS0P03 4 3 Single RSS07P03 7. Fig. 0 SOP8 RSS090P03 SP8J4 SP8J3 9 3. 0 70 6 4 3 90 39.4. SP8J SP8J SP8J Dual 4. 7 40 0 6 4 8 8. 6 Fig. *:VGS=0V *:VGS=V
Other s Drive Voltage:.V Note) Internal circuit:p.9 VDSS ID RDS(on) (Ω) *3 (V) (A) Typ. Max. VMT3 SK34 EMT3 SK9 0. 8 UMT3 SK8 Fig. RJU003N03 Single 0.3.3 SMT3 RJK00N03 3 MPT3 SK6 0. 0.3 RJP00N06. 0.6 Fig. 6 EM6K 0. 8 UM6KN Dual Fig. SM6K4 0.3.3 EMT6 UMT6 SMT6 *3:VGS=4V *3 VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. RTM00P0 RTE00P0 Single 0...6 Fig. RTU00P0 VMT3 EMT3 UMT3 *3:VGS=4V Drive Voltage:4V Note) Internal circuit:p.9 * VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. UMT3 SST3 RK700. 7. RK700A 0.3.0 Fig. RHU003N03 0.3. RHU00N06 0..6.4 RHK00N03 Single 0.34 SMT3 RHK00N06 0..7 RHK003N06.0 0.3 RHP0N03 0.09 0. MPT3 Fig. 6 RHP00N06 0. 0.0 SMT6 SM6K Dual 0..6 Fig. *:VGS=0V * VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. RSM00P03 RSE00P03 Single 0..4 Fig. RSU00P03 VMT3 EMT3 UMT3 *:VGS=0V 6
MOS FET PSOP8. PSOP8S Features Realizes great power supply efficiency with our new technology (i.e., a 8% increase compared to conventional modeles) Ideal for CPU cores Incorporates a highspeed optimized switch on the high side and a low ON resistance on the low side Power Supply Efficiency Evaluation 90 8 Vin=9V Vout=.3V Single PSOP8 realizes same efficiency rate as two SOP8 in parallel connection New product High side:rlw90no3 x Low side :RQWN03 x DCDC converter(cpu Core) Diagram Highside MOS FET Efficiency(%) 80 7 Conventional product High Side:RES070N03 x 3 Low Side :RSS40N03 x 3 8%UP! + Vin ~0V Control IC Lowside MOS FET SBD Vout=.3V Iout=0~0A CPU 70 0 0 0 Features LOAD CURRENT(A) Single PSOP8 package replacing two SOP8 packages The single PSOP8 package has excellent heat dissipation (with a PD. times as high as that of SOP8 packages), that allows the replacement of conventional two SOP8 packages in parallel connection SOP8 x PSOP8 x RSSN03/etc. RQWN03 RSSN03/etc. + / mounting area PD=W(per package) PD=3W 7 Note) Internal circuit:p.0 For Low Side * VDSS ID RDS(on) (mω) Qgd * (V) (A) Typ. Max. (nc) RQWN03 6. 7.7 PSOP8 RQW80N03 8 4..4 RQW00N03 0 3.0 3.9 RQWN03 Single.8. RQAN03 6. 7.7 PSOP8S RQA80N03 8 4..4 RQA00N03 0 3.0 3.9 For High Side 4..4 7.. Fig. 8 4..4 7. *:VGS=0V *:VGS=V VDSS ID RDS(on) (mω) Qgd * (V) (A) Typ. Max. (nc) RLWN03 3 9. 3.3 3.4 PSOP8 RLW40N03 4 8.7. 3.6 RLW90N03 Single 9 4.4 6. 6.8 Fig. 8 PSOP8S RLAN03 3 9. 3.3 3.4 RLA40N03 4 8.7. 3.6 * *:VGS=0V *:VGS=V
Power Transisitors Features Realizes low RDS(on) by optimized design pattern. Builtin gate protection diode Avalanche capability ratings Application PDP, Power Supply CPT3 SK887 RDD0N0 SK7 VDSS (V) 00 0 ID (A) 3 Typ. 3 RDS(on) (Ω) * Max. 4 SK 0 4.4. DPAK RDJN0 RDJ080N RDJ0N 00 8 0. 0.38 0.6 0.6 0. RDN0N0 TO0FN RDN00N0 RDNN0 00 0 0. 0.36 0.6 RDN080N RDN0N 8 0.38 0.6 0. RDX0N 0.03 0.044 RDX80N0 00 8 0.048 0.06 RDXN3 0.06 0.076 RDX0N 0.07 0.097 TO0FM RDX080N40 RDX0N40 RDX0N4 RDX00N4 400 4 8 6 0 0.6 0.3 0.6 6 RDX0N.. RDX080N 0 8 RDX0N RDX04N 4..6. RDX0N 0 6. RDX00N 0 *:VGS=0V 8
MOS FET Internal Note) About more detail information, please see the latest technical specifications. Nch Fig. Fig. Fig.3 Fig.4 Fig. Nch(MPT3) Nch+SBD Fig.6 Fig.7 Fig.8 Pch Fig.9 Fig.0 Fig. Fig. Pch+SBD Fig.3 Fig.4 Fig. Nch+Pch Fig.6 Fig.7 9
Note) About more detail information, please see the latest technical specifications. Nch Pch Fig.8 Fig.9 Fig.0 Fig. 0
Miniature Digital Transistors Single Type 000 00 /GI 0 Low VCE(sat) digital transisitor DTA type DTB type VCE(sat)/V0(on)(mV) 000 00 90% Down DTB type DTA type Low VCE(sat) digital transisitor IC/IB = 0/ C 0 00 000 Ic(mA) Resistance value:r=4.7kω/r=0kω 0 0 00 000 Ic(mA) Resistance value:r=4.7kω/r=0kω PNP NPN Builtin resisitors VCC (V) IC (ma) R (kω) R (kω) VMT3 EMT3 GI V0(on) Typ.(mV) 0 00 DTB3Z DTB3Y DTB43E DTB43X DTB43Z DTB73Z DTB73Y DTB743E DTB743X DTB743Z DTD3Z DTD3Y DTD43E DTD43X DTD43Z DTD73Z DTD73Y DTD743E DTD743X DTD743Z. 4.7 4.7 4.7. 4.7 4.7 4.7 0 0 4.7 0 47 0 0 4.7 0 47 40~ 40~ 0~ 40~ ~ 40~ 40~ 0~ 40~ ~ 70
Complex Type For switing of compact portable devices. High current:0ma EMT6 ON/OFF signal Compact Light Ultraminiature package:emt6(6 size) Low VCE(sat) digital transisitor and small signal digital transisitor in one package. Ideal for switching in power management circuit. Elements VCC(V) IO(mA) R (kω) R (kω) DTR EMD8 DTR DTR DTB43XM Low VCE(sat) Digital Transistor DTC44EM 0 40~ 68~ 4.7 47 0 47 EMD9 DTR DTR DTB3ZM Low VCE(sat) Digital Transistor DTC4EM 0 40~ ~ 0 0 0 DTR EMD DTR DTR DTB73ZM Low VCE(sat) Digital Transistor DTC4EM 00 40~ ~ 0 0 0 MOS FET DTR DTB3ZM Low VCE(sat) Digital Transistor 0 40~ 0 EMF33 MOS FET SK9 0. Drive Voltage:.V DTR
L o w VC E( s a t) Tra nsistor Series ROHM development has achieved a Low VCE(sat) Transisitor series in various small surface mount packages. These Low VCE(sat) Transistors are suitable for digital equipment. Features Low VCE(sat) Transistors in small surface mount packages! Low Energy Consumption. High Collector Current. Application Switching circuits DC/DC converters VCE(sat)(V) 0. 0.0 0.00 IC/IB = 0 Pulsed Ta = C VCE(sat)IC SA77 0.00 0.0 0. 0 IC(A) VCE(sat) SB73 REDUCED 80% (at 00mA) For Portable Equipment: (i.e. Mobile phone, MD, CDROM, DVDROM, Notebook PC, etc.) IC/IB = 0 Pulsed Ta = C VCE(sat)IC SB97K SB690 VCE(sat)(V) 0. 0.0 0.00 QST VCE(sat) REDUCED 80% (at 00mA) 0.00 0.0 0. 0 IC(A) Single Type VMT3 EMT3 UMT3 TUMT3 TUMT6 TSMT3 TSMT6 VCEO (V) IC (A) 3 PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN SA0 SC663 SA08 SC8 SB689 SD6 B73 D70 SB709 SD674 B7 D700 US6T6 US6X SB690 SD63 QST6 QSX US6T4 US6X3 SB70 SD670 QST4 QSX3 SB707 SD67 QST QSX SB694 SD66 B733 D703 B73 D70 US6T7 US6T US6X6 US6X4 SB70 SD67 SB69 SD67 SB706 SD67 SB708 SD673 QST7 QST QST3 QSX6 QSX4 QSX. 3 4 6. 3
IC(A) VCEO(V) EMT6 UMT/UMT6 TUMT/TUMT6 TSMT/TSMT6 SA08 SA08 SB709 SB709 SB70 SB70 SC8 SC8 SD674 SD674 SD67 SD67 SA08 SC8 SA08 SC467 SB690 SD63 SB69 SD67 SA08 DTC3E SA08 DTC44E SA08 DTC4E SA08 SK9 SC8 DTC3E SC8 DTC44E SC8 DTC4E SC8 SK9 SA08 RBS SB707 RB46F SB708 RB46F SB690 RB400D SC8 RBS SD67 RB46F SD673 RB46F QST8 US6T8 US6T9 US6X7 US6X8 USL9 USL USL0 USL QST9 QSX7 QSX8 QSZ QSZ QSL9 QSL QSL3 QSL0 QSL UMT8N UMX8N UMZ7N UMZ8N UMF4N UMFN UMFN UMF6N UMF7N UMF8N UMFN UMF9N UML4N UML6N EMT8 EMX8 EMZ7 EMZ8 EMF4 EMF EMF EMF6 EMF7 EMF8 EMF EMF9 PNP x NPN x PNP + NPN PNP + DTr PNP + MOS NPN + DTr NPN + MOS PNP + SBD NPN + SBD 0 0 40 0 0... 0. 0. 0. 0. 0. 0. 0. 0. 0.. 0.. Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin pin Di. Tr. pin Di. Tr. pin Di. Tr. Tr. Tr. pin pin Di. Tr. Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Type Combination Complex Type 4
Endured Discharge Voltage/ High Speed Switching/Low Noise Transistor Series Outline Introducing our new technology, we realized both high power duability and high speed switching in small surface mount packages. 0 S.O.A. (Safety operating area) New Strong discharge voltage 0µs Features High electrical power duability (wide S.O.A) times better High speed switching times faster High avalanche energy 4 times better Applications DC/DC converter Motor drive IC(A) Defect rate(%) 0. Conventional 0.0 0 00 00 90 80 70 40 Conventional VCE(V) Avalanche energy New 0µs High avalanche energy 0 0 0 0 3 4 0 Switching Time Tstg Switching Speed x Sw(µS) Discharge current:ic(a) IC/IB = 0/ Conventional 0. New 0.0 0.0 0. 0 IC(A)
Series Lineup Current (A) UMT3 Voltage [V] 90 SA047/SC79 SA088/SC876 TUMT3 SMT3 SA37/SC887 SA39/SC989 SA04K/SC734K TSMT3 SA090/SC868 SA04/SC734 TUMT3 SA36/SC986 SA38/SC988 Surface mount devices 3 TUMT6 TSMT3 MPT3 TUMT6 TSMT3 MPT3 CPT3 TSMT3 MPT3 SA048/SC7 SA/SC7 SA3/SC98 SA3/SC96 SA049/SC73 SA6/SC9 SA09/SC86 SA3/SC98 SA094/SC866 SA09/SC867 SA07/SC84 SA33/SC983 SC734/SC97 SA0/SC733 SA3/SC98 SA09/SC98 SA08/SC99 SA3/SC98 CPT3 SA07/SC8 TSMT3 * SA34/SC984 MPT3 SA7/SC8 CPT3 SA0/SC73 SA096/SC88 0 CPT3 SA43/SC0 SA47/SC06 *VCEO=4V Current (A) Voltage [V] 90 Throughhole devices 3 0 SPT ATV TO0FN SA08S/SC873S SA086S/SC874S SA087/SC87 SA089S/SC877S SA09S/SC879S SA093/SC880 SA073/SC86 SA/SC07 SA49/SC0 SAS/SC90S SA06S/SC9S SA0/SC9 SA07/SC93 6
Endured Discharge Voltage/ High Speed Switching Transistor Series Characteristics Surface mount devices UMT3 Pc=0.W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA047 SA088 SC79 SC876 0~390 0~70 /0~390 Q,R Q/Q,R 40/40 40/70 00/0 0/ tf 40/ /80 TUMT3 Pc=W TUMT6 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA36 SA37 SA38 SA39 SA3 SA3 SA33 SC986 SC987 SC988 SC889 SC98 SC98 SC983 90 90 4 4 0~390 0~70 /0~390 0~70 /0~390 Q,R / 00/0 0/3 3/70 00/ 0/80 Q/Q,R / 00/ / 3/ /00 /80 / 00/00 0/0 00/0 /3 Q/Q,R / / / / tf SMT3 Pc=0.W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA048K SA04K SC7K 0~390 Q,R SC734K 90 0~70 /0~390 Q/Q,R / 3/ 00/0 /00 tf 0/3 /80 TSMT3 Pc=W MPT3 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA048 SA3 SA34 SA090 SA09 SA094 SA09 SA04 SA4 SA3 SA SA049 SA7 SA07 SA0 SA09 SC7 SC96 SC984* SC868 SC86 SC866 SC867 SC734 SC97 SC98 SC7 SC73 SC8 SC84 SC733 SC98 90 90 4 0 4 3 6 4 3 4 7 6 4 0~390 0~70 /0~390 Q,R / / / 70/70 / Q/Q,R / 0/ 3/ / / tf 00/0 0/3 00/00 0/0 00/ /0 / 80/80 00/ / 00/0 /3 / 0/ /00 /80 / / 80/0 /80 BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf 0~390 Q,R 0~70 /0~390 Q/Q,R 0/ 0/ / / 0/00 / 0/ / / 80/0 *4V / 00/0 0/3 0/0 0/ 0/ / /80 7
CPT3 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf SA6 SA0 SA43 SA07 SC9 SC73 SC0 SC8 0 3 4 0 6 0~390 Q,R 0/ / / 0/ 0/00 00/ / / 0/0 0/ /40 0/ SA096 SC88 0 0~70 SA47 SC06 0 /0~390 Q/Q,R /70 / / / 0/ 0/40 SA08 SC99 90 4 70/70 00/00 70/70 Throughhole devices SPT Pc=0.3W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA08S SA086S SA089S SA09S SAS SA06S SC873S SC874S SC877S SC879S SC90S SC9S 90 0~390 0~70 /0~390 Q,R Q/Q,R 40/40 / 70/3 / / / 00/0 00/0 /00 00/ 00/00 / tf 40/ 0/3 80/ / 80/80 / ATV Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA087 SA093 SA073 SA0 SA07 SC87 SC880 SC86 SC9 SC93 90 3 4 6 4 0~390 0~70 /0~390 Q,R Q/Q,R / / 0/ / / 00/00 00/0 / / 80/0 tf 0/0 /3 0/ / /80 BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf TO0FN Pc=W SA SA49 SC07 SC0 3 6 / / 0~70 Q/Q,R /0~390 0 / / / / Note) About more detail information, please see the latest technical specifications. 8
Muting Transistors 0000 00 Ron DTC64T 0 Conventional product (DTC34T) 000 Conventional product (DTC34T) Ron(Ω) DTC64T 00 0. 0. 0 00 000 0. 0 00 Ic(mA) Input voltage(v) Builtin Resistor type R/R(kΩ) Internal circut UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) DTC63T./ DTC643T 4.7/ 0 0 DTC663E 6.8/6.8 DTC64T 0/ R/R(kΩ) Internal circut Elements SMT6 BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) IMH4./ DTC63T IMH3 4.7/ DTC643T 0 0 IMH 6.8/6.8 DTC663E IMH 0/ DTC64T 9
Features Low RDS(on) High BVEBO=V, V Compound packages OPAMP V V kω Applications 0V or V Home Audio Car Stereo Highß HighBVEBO Single type EMT3 UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) SD704K SD70S 0 0 80~700 SD64 SD3 SD6K SD77S 80~700 SD4K SD44S 0 0 80~700 Complex type EMT6 SMT6 Elements BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) IMX SD704K 0 0 800~700 EMX6 SD64 80~700 IMX9 SD4K 0 0 ~700 0
External Dimensions (Unit:mm) VMT3. 0. 0. SST3 <SOT3> 0.Min. ()Base(IN)(Gate) ()Emitter(GND)(Source) Collector(OUT)(Drain). 0.3 0.3 () () 0. ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain).4.3 () ().9.9 Each lead has same EMT3 (SC7A) <SOT46> ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) UMT3 (SC70) <SOT33> 0.3 0.3 0.Min..6 () () 0. 0. () () 0.6 0.6.0.3.6.0 EMT UMT (SC88A) <SOT33> 0. 0. 0.3 (4) () () ()..6 (4).0.6 pin mark () 0.6 0.6 Each lead has same.3.0 EMT6 UMT6 (SC88) <SOT363> 0. 0. 0.3 () (4) (4) () (6)..6 () ().0.6 () pin mark Each lead has same 0.6.3.0.. 0. (6).. () pin mark (6).. () 0.6 pin mark Surface mount devices ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) TUMT3 ()Base(Gate) ()Emitter(Source) Collector(Drain) SMT3 (SC9) <SOT346> ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) TSMT3 0.Min. 0.3 0. 0.3Min..6.8 Each lead has same () ().7 0.. 0~0..8.6 () () 0.6 0.6.3 7 Max..0 Max..9..9 Each lead has same TUMT SMT (SC74A) TSMT 0.3 0.Min. 0.3 0.3Min. 0. (4) () () ().6.8 () ().7 0.. 0~0..8.6 (4) () 0.6 0.6 7 Max. Each lead has same.3 pin mark.9.9.0 Max.. Each lead has same TUMT6 SMT6 (SC74) <SOT47> TSMT6 0.3 0.Min. 0.3 0.3Min. 0. (4) () (6) (6) () (4).6.8 () () () () Each lead has same 0.6 0.6 7.3 Max..0.7 0. pin mark. 0~0..8.6 Max..9.9 pin mark. Each lead has same.9 ().9 () (4) () ().9.9 () (4) () () (6) ().9.9 pin mark ()Base(Gate) ()Emitter(Source) Collector(Drain) SOP8 0. (8) () 0.6 0.3~0.6 6.0 3.9 0~0. () (4).0MAX Each lead has same.7.7.0 pin mark PSOP8 0.6 0.3~0.6 0~0. 6.0.0 () (6) (7) (8) (4) () ().0.7 pin mark.0max Each lead has same 3.9 3. PSOP8S. 0.6 0.3~0.6 0~0. 6.0.0 () (6) (7) (8) (4) () () pin mark.0.0max Each lead has same MPT3 (SC6) <SOT89> Min. 4.0..0 Each lead has same. 0. CPT3 (SC63) <SOT48> 0~0. 6.... 0.6.3.3 () DPAK 0. 0~0. 0.0..4.08 ()Base(Gate) ()Collector(Drain) Emitter(Source) 4..6. () (). 3.0 ()Base(Gate) ()Collector(Drain) Emitter(Source).3 9... Min. ().0.3 0~0.3 9.0..4.7 Notes: ) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. ) For refer to the data sheet.
SPT (SC7) 4.0.0 ATV 6.8. 3Min. 4.4 (Min.) 3.0 0.6Max..0 4..0. () ().4.4.0 ()Emitter ()Collector Base ()() ()Emitter ()Collector Base TO6FP HRT 7.8 3. Surface 3.3 Back 3.9 8.0 4. Throughhole devices. 9. 6.9 ()Emitter ()Collector Base TO0FN.0.0 6.0. 8.0.7.6 C.3.3.76 () () 0.0 3. 4..8 ()Emitter ()Collector Base TO0FP 7.0.0 6.0Min. 8.0.0.8.0..3 4.0 ()Base(Gate) ()Collector(Drain) Emitter(Source).4 () ().4.6 ()Base ()Collector Emitter TO0FM 0.0 3. 4..8.3. 4.0.0.0 8.0.0 3..3.3.4.4. () () 0.0 4. 7.0. 3..0.3 3.Min..4 () ()..4.6.4.4.6 ()Base(Gate) ()Collector(Drain) Emitter(Source) () () Notes: ) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. ) For refer to the data sheet.
Catalog No.47P4869E 0. 004 ROHM TSU