InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT, : InAlAs/GaSbAs, InP/GaSbAs, II PACS: Pq, De. , GaSbAs InP/GaSbAs/InP DHBT.
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1 InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT * 1) 2)3) 1)2) 1) 1) (, ) 2) (, ) 3) (, ) ( ; ) (DHBT) - (E-B) - (B-C), -, DHBT. : E-B B-C II InP/GaSbAs/InP DHBT, E-B I B-C II InAlAs/GaSbAs/InP DHBT,. : InAlAs/GaSbAs, InP/GaSbAs, II PACS: Pq, De 1 InP (HBT), InP/InGaAs HBT(SHBT), InGaAs,,,, InP HBT(DHBT). InP/InGaAs/InP DHBT 1(a), InP/InGaAs/InGaAs SHBT, InP/InGaAs/InP DHBT,, HBT. DHBT BC,, GaSbAs InP/GaSbAs/InP DHBT [1]. InP/GaSbAs/InP DHBT 1(b), I DHBT, InP/GaSbAs/InP DHBT II,, I DHBT, [2]. I InP/InGaAs/InP DHBT, II InP/GaSbAs/InP DHBT, InP GaSbAs, [3],,, I * 2009 ( : FMI ), ( : 09C959), ( : 2010TY2003) ( : LY12F04003). zhoushl@zjut.edu.cn c 2012 Chinese Physical Society
2 II InAlAs/GaSbAs/InP DHBT I II DHBT, 1(c) InAlAs/GaSbAs/InP DHBT. 1, - II, SHBT I DHBT ; - II,,,, - I,,,. II DHBT [4 9], I II DHBT, - InAlAs InP/InAlAs/GaSbAs/InP DHBT, InP InAlAs, [9]. - (thermionic-fielddiffusion) InAlAs/GaSbAs/InP InP/GaSbAs/InP DHBT. 2,, -. - J n = qµ n n Φ n, (1) J p = qµ p p Φ p, (2) 1 DHBT (a) InP/InGaAs/InP DHBT ; (b) InP/GaSbAs/InP DHBT ; (c) InAlAs/GaSbAs/InP DHBT Φ n, Φ p. x = x j,. ;,. WKB [10,11] J n,i = q ν n 4 J p,i =q ν p 4 ( exp [ [ n(x j ) n(x+ j ) E ) ] c (1 + δ n ), (3) kt ) ], (4) p(x j ) p(x+ j ) exp( E v kt ν n ν p, 1/4 ; δ n Npn [11]. [12], - HBT J E J C J B
3 . J p (x 4 ), II DHBT J E, J C J B, J p (x 4 ) J p (x 1 ), J p (x 1 ) [12]. HBT, Fermi-Dirac (BGN). BGN, Jain-Roulston, BGN [13 15]., : Shockley-Read-Hall(SRH), Auger [16]. 3 II DHBT -,,, DHBT SHBT DHBT, Yi [17] Oon Sim Ang DHBT SHBT [18]. Yi [19] InAlAs/InGaAs HBT, InP HBT, : InAlAs 145 nm, cm 3 ; InGaAs 80 nm, cm 3 ; InGaAs 700 nm, cm 3. 2, InP HBT. - II DHBT. DHBT 1, ; E- B B-C II InP/GaAsSb/InP DHBT, E-B I B-C II In- AlAs/GaAsSb/InP DHBT. 100 nm, cm 3 ; GaSbAs 80 nm, cm 3 ; InP 600 nm, cm 3. 3 DHBT Gummelpoon, : DHBT, 3 InAlAs/GaSbAs/InP DHBT (, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT 2 3 ), InP/GaSbAs/InP DHBT ( V BE = 0.3 V, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT 25 ), InAlAs/GaSbAs/InP DHBT. 2 InAlAs/InGaAs DHBT J C, J B Gummel-poon (V CB = 0) 1 DHBT InP or In 0.48 Al 0.52 As Ga 0.51 Sb 0.49 As InP /nm /cm DHBT I-V, : InP/GaSbAs/InP DHBT, V CE, InP/GaSbAs/InP DHBT,, In- AlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT ;, InAlAs/GaSbAs/InP DHBT,
4 V CE,,,, [12] ; J c V ce Jb=const, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT,, DHBT [20].,, [4] f T = 1 J C 2π Q T. (5) Vce=const 5 f T, I E-B InAlAs/GaSbAs/InP DHBT,. 5 J c GaSbAs DHBT f T 3 (V CB = 0) GaSbAs DHBT J C, J B Gummel-poon 4 4 GaSbAs DHBT I-V f T HBT DHBT,,. DHBT E-B B-C II DHBT, : InAlAs/GaSbAs/InP DHBT, In- AlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT, :,, I E-B II B-C DHBT
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6 Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT Zhou Shou-Li 1) Yang Wan-Chun 2)3) Ren Hong-Liang 1)2) Li Jia 1) 1) ( College of Information Engineering, Zhejiang University of Technology, Hangzhou , China ) 2) ( State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai , China ) 3) ( College of Information Engineering, Xiangtan University, Xiangtan , China ) ( Received 7 September 2011; revised manuscript received 31 October 2011 ) Abstract The characteristics of a double heterojunction bipolar transistor(dhbt) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(e-b) heterojunction and base-collector(b-c) heterojunction. Based on thermionic-fielddiffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-i E-B junction and a type-ii B-C junction and the later has a type-ii E-B junction and a type-ii B-C junction. The simulation results show that DHBT with a type-i E-B junction and a type-ii B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage. Keywords: InAlAs/GaSbAs, InP/GaSbAs, II-type DHBT PACS: Pq, De * Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI ), the Hunan Province Education Department (Grant No. 09C959), the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003), and the Natural Science Foundation of Zhejiang Province (Grant No. LY12F04003). zhoushl@zjut.edu.cn
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