Surface Mount Multilayer Chip Capacitors for Commodity Solutions
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- Κλεόπας Σπηλιωτόπουλος
- 6 χρόνια πριν
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Transcript
1 Surface Mount Multilayer Chip Capacitors for Commodity Solutions Below tables are test procedures and requirements unless specified in detail datasheet. 1) Visual and mechanical 2) Capacitance 3) Q/DF (dissipation factor) Class 1: C0G (NP0) Cap pf; 1.0 V RMS ± 0.2 V RMS ; 1 MHz ± Cap. > 1000 pf; 1.0 V RMS ± 0.2 V RMS ; 1 khz ± Class 2: X7R, X5R, Y5V Cap. 10 μf; 1.0 V RMS ± 0.2 V RMS ; 1 khz ± (1) Cap. > 10 μf; 0.5 V RMS ± 0.2 V RMS ; 120 Hz ± 20 % Note (1) Test conditions 0.5 V RMS ± 0.2 V RMS ; 1 khz ± X7R: 0603: 2.2 μf/10 V 0805: 10 μf/6.3 V and 10 V X5R: 0201: 220 nf/6.3 V 0402: 4.7 μf/6.3 V 0402: 2.2 μf/10 V 0603: 10 μf/6.3 V No remarkable defect Dimensions should confirm to individual specification sheet Shall not exceed the limits given in the detailed specification C0G (NP0): Cap. 30 pf: Q 1000 Cap. < 30 pf: Q C X5R, X7R: RATED 3 % 0201 (50 V); μf; μf; μf 50 V 2.5 % 5 % μf; μf; μf; 35 V 3.5 % μf; 5 % μf; μf; 25 V 3.5 % 7 % μf; μf μf; μf; μf; μf; μf; μf; 5 % μf; μf; 3.5 % μf; μf; μf; μf; μf; μf; μf; 10 V 5 % μf; μf; μf; μf; μf μf; μf; 6.3 V μf; μf; μf; μf 20 % μf 4 V - - Y5V: RATED 50 V 5 % 7 % μf; μf; μf 35 V 7 % % 7 % 9 % 9 % 12.5 % μf; μf; μf; μf; μf; μf; μf; 9 % μf; μf 12.5 % μf μf; μf; μf; 10 V 12.5 % 20 % μf 6.3 V 20 % - - Revision: 27-Mar-13 1 Document Number: 28545
2 4) Dielectric strength 5) Insulation resistance 6) Temperature coefficient 7) Adhesive strength of termination 8) Vibration resistance 9) Solderability To apply voltage ( 100 V) 250 % Duration: 1 s to 5 s Charge and discharge current less than 50 ma To apply voltage 200 V to 300 V 2 times V DC 500 V to 999 V 1.5 times V DC 1000 V to 3000 V 1.2 times V DC Cut-off, set at 10 ma TEST = 15 s RAMP = 0 Rated voltage 100 V: To apply rated voltage for max. 120 s Rated voltage: 200 V to 630 V Rated voltage: 630 V To apply rated voltage (500 V max.) for 60 s To apply 500 V for 60 s No evidence of damage or flash-over during test 10 G or R x C 500 F whichever is smaller Class 2 (X5R, X7R, Y5V): RATED 50 V: μf; μf; μf; 35 V: μf; 25 V: μf; μf; μf; μf; : μf; μf; μf; μf; μf 10 V: nf; μf; μf; μf; μf; μf 10 G or R x C > 100 F whichever is smaller 10 G INSULATION RESISTANCE 10 G or R x C 100 F With no electrical load: T.C. Operating Temp. T.C. Capacitance change C0G (NP0) - 55 C to 125 C at 25 C C0G (NP0) Within ± 30 ppm/ C X7R - 55 C to 125 C at 25 C X7R Within ± X5R - 55 C to 85 C at 25 C X5R Within ± Y5V - 25 C to 85 C at 20 C Y5V Within + 30 %/- 80 % Pressurizing force: 0201: 2N 0402 and 0603: 5 N > 0603: 10 N Test time 10 s ± 1 s Vibration frequency: 10 Hz/min to 55 Hz/min Total amplitude: 1.5 mm Test time: 6 h (2 h each in 3 mutually perpendicular directions) Solder temperature: 235 C ± 5 C Dipping time: 2 s ± 0.5 s or removal of the terminations Capacitance change and Q/DF: to meet initial specification 95 % minimum coverage of all metallized area Revision: 27-Mar-13 2 Document Number: 28545
3 10) Bending test 11) Resistance to soldering heat 12) Temperature cycle The middle part of the substrate shall be pressurized by means of the pressurizing rod at a rate of about 1 mm per s until the deflection becomes 1 mm and then the pressure shall be maintained for 5 s ± 1 s Measurement to be made after keeping at room temperature for Solder temperature: 260 C ± 5 C Dipping time: 10 s ± 1 s Preheating: 120 C to 150 C for 1 min before immerse the capacitor in a eutectic solder Before initial measurement (class 2 only): Perform 150 C + 0 C/ - 10 C for 1 h and then set for at room temperature Measurement to be made after keeping at room temperature for Conduct the 5 cycles according to the temperature and time Step Temperature ( C) Time (min.) 1 Min. operating temp. + 0/ ± 3 2 Room temperature 2 ~ 3 3 Max. operating temp. + 3/ ± 3 4 Room temperature 2 ~ 3 Before initial measurement (class 2 only): Perform 150 C + 0 C/- 10 C for 1 h and then set for at room temperature Measurement to be made after keeping at room temperature for C0G (NP0): within ± 5.0 % or ± 0.5 pf whichever is larger X7R, X5R: within ± 12.5 % Y5V: within ± 30 % (This capacitance change means the change of capacitance under specified flexure of substrate from the capacitance measured before the test) C0G (NP0): within ± 2.5 % or ± 0.25 pf whichever is larger X7R, X5R: within ± 7.5 % Y5V: within ± 20 % Q/DF, I.R. and dielectric strength: To meet initial requirements 25 % maximum leaching on each edge C0G (NP0): within ± 2.5 % or ± 0.25 pf whichever is larger X7R, X5R: within ± 7.5 % Y5V: within ± 20 % Q/DF, I.R. and dielectric strength: To meet initial requirements Revision: 27-Mar-13 3 Document Number: 28545
4 C0G (NP0): within ± 5.0 % or ± 0.5 pf whichever is larger X7R, X5R: 10 V within ± 12.5 %; 6.3 V, within ± 25 % Y5V: 10 V within ± 30 %, 6.3 V within + 30 %/- 40 % Q/DF value: C0G (NP0): more than 30 pf: Q pf C 30 pf: Q C; Less than 10 pf: Q C X5R, X7R: 6 % 0201 (50 V); μf; μf; μF 50 V 3 % 20 % μf; μf; μf; 35 V 5 % 20 % μf; μF μf; μf; 14 % μf; μf μf; μf; μf; μf; 5 % μf; μf; μf; μf; μf; μf; μf; μf; 10 V 7.5 % μf; μf; μf; μf; μf; 20 % μf; μf 13) Humidity (damp heat) steady state Test temperature: 40 C ± 2 C Humidity: 90 % to 95 % RH Test time: 500 h + 24 h/- 0 h Before measurement (class 2 only): Perform 150 C + 0 C/ - 10 C for 1 h and then set for at room temperature Measurement to be made after keeping at room temperature for 6.3 V 30 % μf; μf; μf; μf; μf; μf 4 V 20 % - - Y5V: 50 V 7.5 % μf; μf; μf 35 V V 7.5 % μf; μf; μf; μf; μf; μf; μf; 12.5 % μf; μf 20 % μf μf; μf; 12.5 % 20 % μf; 10 V 20 % 30 % μf 6.3 V 30 % - - I.R.: 10 V: 1 G or R x C 50 F whichever is smaller CLASS 2 (X5R, X7R, Y5V): RATED INSULATION RESISTANCE 50 V: μf; μf; μf; 35 V: μf; 25 V: μf; μf; μf; μf; : μf; μf; μf; μf; μf 10 V: nf; μf; μf; μf; μf; μf 1 G or R x C 10 F Revision: 27-Mar-13 4 Document Number: 28545
5 14) Humidity (damp heat) load Test temperature: 40 C ± 2 C Humidity: 90 % ~ 95 % RH Test time: 500 h + 24 h/- 0 h To apply voltage: rated voltage (max. 500 V) Before initial measurement (class 2 only): Perform 150 C + 0 C/- 10 C for 1h and then set for at room temperature Measurement to be made after keeping at room temperature for C0G (NP0): within± 7.5 % or ± 0.75 pf whichever is larger. X7R, X5R: 10 V within ± 12.5 %; 6.3 V, with ± 25 % Y5V: 10 V within ± 30 %; 6.3 V, within + 30 %/- 40 % Q/DF value: C0G (NP0) Cap 30 pf: Q 200; Cap < 30 pf: Q /3 C X5R, X7R: 50 V 3 % 6 % 0201 (50 V); μf; μf; μf 20 % μf; μf; μf; 35 V 5 % 20 % μf; 5 % μf; μf; 14 % μf; μf Revision: 27-Mar-13 5 Document Number: μf; μf; μf; μf; μf; μf; μf; μF μf; μf; μf; μf; μf; 10 V 7.5 % μf; μf; μf; μf; μf; 20 % μf; μf 6.3 V 30 % μf; μf; μf; μf; μf; μf 4 V 20 % - - Y5V: 50 V 7.5 % μf; μf; μf 35 V V 7.5 % 12.5 % 20 % μf; μf; μf; μf; μf; μf; μf; 12.5 % μf; μf 20 % μf 10 V 20 % 30 % μf 6.3 V 30 % - - I.R.: 10 V: 500 M or 25 F whichever is smaller CLASS 2 (X5R, X7R, Y5V): RATED μf; μf; μf; 50 V: μf; μf; μf; 35 V: μf; 25 V: μf; μf; μf; μf; : μf; μf; μf; μf; μf 10 V: nf; μf; μf; μf; μf; μf INSULATION RESISTANCE 500 M or R x C 5 F
6 15) High temp. load (endurance) Test temperature: C0G (NP0), X7R/X7E: 125 C ± 3 C X5R, Y5V: 85 C ± 3 C To apply voltage: C0G (NP0): ± 3.0 % or ± 0.3 pf whichever is larger. X7R, X5R: 10 V within ± 12.5 %; 6.3 V, with ± 25 % Y5V: 10 V within ± 30 %; 6.3 V, within + 30 % to - 40 % Q/DF value: C0G (NP0): More than 30 pf, Q pf C < 30 pf: Q 275 C C; Less than 10 pf: Q 200 C + 10 C (1.1) 100 % of rated voltage for below range X5R, X7R: SIZE DIELECTRIC RATED CAP. RANGE 0201 X5R/X7R 6.3 V, 10 V C 0.1 μf 6 % 0402 X5R/X7R 6.3 V, 10 V C 1 μf 50 V 3 % 0603 X5R/X7R 6.3 V, 10 V C 4.7 μf 20 % 0201 (50 V); μf; μf; μf μf; μf; μf; 0805 X5R/X7R 6.3 V C 22 μf 35 V 5 % 20 % μf; 1206 X5R/X7R 6.3 V C 47 μf μf; μf; (1.2) 6.3 V or C 10 μf: 150 % of rated voltage 14 % μf; μf (2)10 V U R < 500 V: 200 % of rated voltage μf; μf; μf; μf; 150 % of rated voltage for below range: μf; μf; μf; 5 % SIZE DIELECTRIC CAP μf; μf; μf; RANGE μf; μf; 0402 X5R/X7R 10 V,, μf; μf; μf; C 0.22 μf 25 V 10 V 7.5 % μf; μf; Y5V C 0.47 μf 20 % μf; μf 0603 X5R/X7R 10 V, 6.3 V 30 % μf; μf; μf; μf; μf; μf Y5V C 2.2 μf 4 V 20 % - - X5R/X7R 10 V C 4.7 μf Y5V: 0805 Y5V C 4.7 μf RATED (3) 500 V: 150 % of rated voltage (4) U R 630 V: 120 % of rated voltage 50 V 7.5 % μf; μf; μf Test time: 1000 h + 24 h/- 0 h Before measurement (class 2 only): Perform 150 C + 0 C/- 10 C for 1 h and then set for at room temperature Measurement to be made after keeping at room temperature for 35 V μf; μf; μf; μf; 25 V 7.5 % μf; μf; μf; 12.5 % μf; μf 20 % μf 12.5 % 20 % μf; μf; μf; 10 V 20 % 30 % μf 6.3 V 30 % - - I. R.: 10 V: 1 G or 50 F whichever is smaller CLASS 2 (X5R, X7R, Y5V): RATED INSULATION RESISTANCE 50 V: μf; μf; μf; 35 V: μf; 25 V: μf; μf; μf; μf; : μf; μf; μf; 1 G or R x C 10 F μf; μf 10 V: nf; μf; μf; μf; μf; μf Revision: 27-Mar-13 6 Document Number: 28545
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Features. RoHS compliant 2. Body size Ф5mm~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φmm:-40~+70
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ARN series Thin Film High Precision Chip Resistor Features» Advanced thin film technology» Very tight tolerance down to ±0.01%» Extremely low TCR down to ±5ppm/» Wide resistance range 1ohm-3Mega ohm» Miniature
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Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
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.Features: 1.Coating epoxy resin that ensures the humidity resistance to be long life. 2.Contribute to be high Q and selfresonant frequencies.applications: 1.Electronics products. 2.Communication equipment.
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Construction D1 L (AR Series) Features -Advanced thin film technology -Very tight tolerance down to ±0.01% -Extremely low TCR down to ±5PPM/C -Wide resistance range 1ohm ~ 3Mega ohm -Miniature size 0201
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FETURES 0603, 0805, 0806 ND 1008 CSE SIZES HIGH CURRENT ND LOW RESISTNCE NEW "S" VERSION FOR INCRESED STURTION CURRENT UGRDED "H" VERSION FOR HIGHEST CURRENT REFLOW SOLDERING LICBLE CKGE FOR UTOMTIC ICKLCE
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hin Film Precision Chip Resistor-AR Series Construction L D1 3 4 5 6 D2 9 8 7 1 2 1 Alumina Substrate 4 Edge Electrode (NiCr) 7 Resistor Layer (NiCr) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Overcoat
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Features. RoHS & Halogen Free (HF) compliant 2. Body size: Ф5mm ~ Ф30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Ф5mm:
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Scope -Calchip s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Calchip s design provides high, excellent Q, and superior temperature stability. This highly
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Διαβάστε περισσότερα1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
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