ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017
|
|
|
- Ευδώρα Βούλγαρης
- 8 χρόνια πριν
- Προβολές:
Transcript
1 ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017 ΔΙΑΛΕΞΗ 5: Διαδικασία Παραγωγής Ολοκληρωμένων Κυκλωμάτων ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ [Προσαρμογή από Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al. ]
2 Επανάληψη - CMOS Properties l Full rail-to-rail swing Þ high noise margins Logic levels not dependent upon the relative device sizes Þ transistors can be minimum size Þ ratioless l Always a path to V dd or GND in steady state Þ low output impedance (output resistance in kw range) Þ large fan-out (albeit with degraded performance) l Extremely high input resistance (gate of MOS transistor is near perfect insulator) Þ nearly zero steady-state input current l No direct path steady-state between power and ground Þ no static power dissipation l Propagation delay function of load capacitance and resistance of transistors ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.2 Θεοχαρίδης, ΗΜΥ, 2017
3 Integrated circuit invented 3 September 12th 1958 Jack Kilby at Texas instrument had built a simple oscillator IC with five integrated components (resistors, capacitors, distributed capacitors and transistors) In 2000 the importance of the IC was recognized when Kilby shared the Nobel prize in physics with two others. Kilby was sited by the Nobel committee "for his part in the invention of the integrated circuit a simple oscillator IC ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.3 Θεοχαρίδης, ΗΜΥ, 2017 Lecture #1
4 Planar technology invented 4 l Kilby's invention had a serious drawback, the individual circuit elements were connected together with gold wires making the circuit difficult to scale up to any complexity. l By late 1958 Jean Hoerni at Fairchild had developed a structure with N and P junctions formed in silicon. Over the junctions a thin layer of silicon dioxide was used as an insulator and holes were etched open in the silicon dioxide to connect to the junctions. l In 1959, Robert Noyce also of Fairchild had the idea to evaporate a thin metal layer over the circuits created by Hoerni's process. l The metal layer connected down to the junctions through the holes in the silicon dioxide and was then etched into a pattern to interconnect the circuit. Planar technology set the stage for complex integrated circuits and is the process used today. Planar technology ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.4 Θεοχαρίδης, ΗΜΥ, 2017 Lecture #1
5 IC Fabrication Technology: History (cont.) 5 l Epitaxial deposition developed l l Bell Labs developed the technique of Epitaxial Deposition whereby a single crystal layer of material is deposited on a crystalline substrate. Epitaxial deposition is widely used in bipolar and sub-micron CMOS fabrication First MOSFET fabricated l l Kahng at Bell Labs fabricates the first MOSFET First commercial ICs l l Fairchild and Texas Instruments both introduce commercial ICs Transistor-Transistor Logic invented l l Semiconductor industry surpasses $1-billion in sales First MOS IC l RCA produces the first PMOS IC. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.5 Θεοχαρίδης, ΗΜΥ, 2017 Lecture #1
6 CMOS invented 6 l Frank Wanlass at Fairchild Semiconductor originated and published the idea of complementary-mos (CMOS). l It occurred to Wanlass that a complementary circuit of NMOS and PMOS would draw very little current. Initially Wanlass tried to make a monolithic solution, but eventually he was forced to prove the concept with discrete devices. l l Enhancement mode NMOS transistors were not yet available and so Wanlass was used a depletion mode device biased to the off-state. Amazingly CMOS shrank standby power by six orders of magnitude over equivalent bipolar or PMOS logic gates. l On June 18, 1963 Wanlass applied for a patent. On December 5th 1967 Wanlass was issued U.S. Patent # 3,356,858 for "Low Stand-By Power Complementary Field Effect Circuitry". l CMOS forms the basis of the vast majority of all high density ICs manufactured today. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.6 Θεοχαρίδης, ΗΜΥ, 2017 Lecture #1
7 Silicon IC processing l Similar to photographic printing Expose the silicon wafer through a mask Process the silicon wafer Repeat sequentially to pattern all the layers l Layout: A set of masks that tell a fabricator what to pattern For each layer in your circuit Layers are metal, drain/source implants, gate, etc. You draw the layers Subject to vendor-supplied spacing rules ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.7 Θεοχαρίδης, ΗΜΥ, 2017
8 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.8 Θεοχαρίδης, ΗΜΥ, 2017
9 The wafer l l l Czochralski process Melt silicon at 1425 C Add impurities (dopants) Spin and pull crystal Slice into wafers 0.25mm to 1.0mm thick Polish one side ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.9 Θεοχαρίδης, ΗΜΥ, 2017
10 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.10 Θεοχαρίδης, ΗΜΥ, 2017
11 The Wafer ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.11 Θεοχαρίδης, ΗΜΥ, 2017
12 Crystal and wafer Wand (a finished 250lb crystal) A polished wafer ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.12 Θεοχαρίδης, ΗΜΥ, 2017
13 Growing the Silicon Ingot From Smithsonian, 2000 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.13 Θεοχαρίδης, ΗΜΥ, 2017
14 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.14 Θεοχαρίδης, ΗΜΥ, 2017
15 Crystalline or contaminate defects will kill the operation of an IC, so it is imperative that the silicon is ultra-pure. In order to create the best possible quality of silicon, a pure layer of silicon is grown on the raw wafer via an epitaxial growth process. This is known as the epi-layer. This layer is very thin - approximately 3 percent or less of the wafer thickness. As device complexity grows, the need for epi-wafers increases. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.15 Θεοχαρίδης, ΗΜΥ, 2017
16 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.16 Θεοχαρίδης, ΗΜΥ, 2017
17 Lithography l Patterning is done by exposing photoresist with light l Requires many steps per layer l Example: Implant layer Reference: FULLMAN KINETICS ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.17 Θεοχαρίδης, ΗΜΥ, 2017
18 Grow Oxide Layer Reference: FULLMAN KINETICS ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.18 Θεοχαρίδης, ΗΜΥ, 2017
19 Add Photoresist Reference: FULLMAN KINETICS ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.19 Θεοχαρίδης, ΗΜΥ, 2017
20 The mask l Illuminate reticle on wafer Typically 4 reduction l Typical image is 25 25mm Limited by focus l Step-and repeat across wafer Limited by mechanical alignment 4X reticle Wafer ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.20 Θεοχαρίδης, ΗΜΥ, 2017
21 Mask Reference: FULLMAN KINETICS ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.21 Θεοχαρίδης, ΗΜΥ, 2017
22 9/03 IEEE spectrum ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.22 Θεοχαρίδης, ΗΜΥ, 2017
23 Photolithography 9/03 IEEE spectrum ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.23 Θεοχαρίδης, ΗΜΥ, 2017
24 9/03 IEEE spectrum ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.24 Θεοχαρίδης, ΗΜΥ, 2017
25 CMOS Process at a Glance Define active areas Etch and fill trenches Implant well regions Deposit and pattern polysilicon layer Implant source and drain regions and substrate contacts Create contact and via windows Deposit and pattern metal layers q q One full photolithography sequence per layer (mask) Built (roughly) from the bottom up 5 metal 2 4 metal 1 2 polysilicon exception! 3 source and drain diffusions 1 tubs (aka wells, active areas) ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.25 Θεοχαρίδης, ΗΜΥ, 2017
26 Photolithographic Process oxidation optical mask stepper exposure photoresist removal (ashing) photoresist coating photoresist development process step spin, rinse, dry acid etch ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.26 Θεοχαρίδης, ΗΜΥ, 2017
27 Patterning - Photolithography 1. Oxidation 2. Photoresist (PR) coating 3. Stepper exposure 4. Photoresist development and bake 5. Acid etching Unexposed (negative PR) Exposed (positive PR) 6. Spin, rinse, and dry 7. Processing step Ion implantation Plasma etching Metal deposition 8. Photoresist removal (ashing) SiO 2 mask UV light PR ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.27 Θεοχαρίδης, ΗΜΥ, 2017
28 Example of Patterning of SiO2 Chemical or plasma etch Si-substrate Silicon base material Photoresist SiO 2 Si-substrate Hardened resist SiO 2 4. After development and etching of resist, chemical or plasma etch of SiO 2 Si-substrate 1&2. After oxidation and deposition of negative photoresist Si-substrate UV-light Patterned optical mask Exposed resist Si-substrate 5. After etching Si-substrate Hardened resist SiO 2 SiO 2 3. Stepper exposure 8. Final result after removal of resist ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.28 Θεοχαρίδης, ΗΜΥ, 2017
29 Diffusion and Ion Implantation 1. Area to be doped is exposed (photolithography) 2. Diffusion or Ion implantation ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.29 Θεοχαρίδης, ΗΜΥ, 2017
30 Deposition and Etching 1. Pattern masking (photolithography) 2. Deposit material over entire wafer CVD (Si 3 N 4 ) chemical deposition (polysilicon) sputtering (Al) 3. Etch away unwanted material wet etching dry (plasma) etching ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.30 Θεοχαρίδης, ΗΜΥ, 2017
31 A nice step by step process at the end of the slides
32 Planarization: Polishing the Wafers From Smithsonian, 2000 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.32 Θεοχαρίδης, ΗΜΥ, 2017
33 Self-Aligned Gates 1. Create thin oxide in the active regions, thick elsewhere 2. Deposit polysilicon 3. Etch thin oxide from active region (poly acts as a mask for the diffusion) 4. Implant dopant ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.33 Θεοχαρίδης, ΗΜΥ, 2017
34 Simplified CMOS Inverter Process cut line p well ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.34 Θεοχαρίδης, ΗΜΥ, 2017
35 P-Well Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.35 Θεοχαρίδης, ΗΜΥ, 2017
36 Active Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.36 Θεοχαρίδης, ΗΜΥ, 2017
37 Poly Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.37 Θεοχαρίδης, ΗΜΥ, 2017
38 P+ Select Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.38 Θεοχαρίδης, ΗΜΥ, 2017
39 N+ Select Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.39 Θεοχαρίδης, ΗΜΥ, 2017
40 Contact Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.40 Θεοχαρίδης, ΗΜΥ, 2017
41 Metal Mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.41 Θεοχαρίδης, ΗΜΥ, 2017
42 A Modern CMOS Process Dual-Well Trench-Isolated CMOS gate oxide field oxide Al (Cu) TiSi 2 SiO 2 tungsten n+ p well p-epi p- n well p+ SiO 2 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.42 Θεοχαρίδης, ΗΜΥ, 2017
43 Modern CMOS Process Walk-Through p-epi p+ Base material: p+ substrate with p-epi layer p-epi p+ SiN 3 4 SiO 2 After deposition of gate-oxide and sacrifical nitride (acts as a buffer layer) p+ After plasma etch of insulating trenches using the inverse of the active area mask ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.43 Θεοχαρίδης, ΗΜΥ, 2017
44 CMOS Process Walk-Through, con t SiO 2 After trench filling, CMP planarization, and removal of sacrificial nitride n After n-well and V Tp adjust implants p After p-well and V Tn adjust implants ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.44 Θεοχαρίδης, ΗΜΥ, 2017
45 CMOS Process Walk-Through, con t poly(silicon) After polysilicon deposition and etch n+ p+ After n+ source/dram and p+ source/drain implants. These steps also dope the polysilicon. SiO 2 After deposition of SiO 2 insulator and contact hole etch ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.45 Θεοχαρίδης, ΗΜΥ, 2017
46 CMOS Process Walk-Through, con t Al After deposition and patterning of first Al layer. Al SiO 2 After deposition of SiO 2 insulator, etching of via s, deposition and patterning of second layer of Al. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.46 Θεοχαρίδης, ΗΜΥ, 2017
47 Layout Editor: Design Frame ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.47 Θεοχαρίδης, ΗΜΥ, 2017
48 Layer Representation l Metals (five) and vias/contacts between the interconnect levels Note that m5 connects only to m4, m4 only to m3, etc., and m1 only to poly, ndif, and pdif Some technologies support stacked vias q Active active areas on/in substrate (poly gates, transistor channels (nfet, pfet), source and drain diffusions (ndif, pdif), and well contacts (nwc, pwc)) q Wells (nw) and other select areas (pplus, nplus, prb) ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.48 Θεοχαρίδης, ΗΜΥ, 2017
49 CMOS Inverter Layout Out In metal1-poly via metal1 polysilicon metal2 V DD pfet pdif metal1-diff via GND PMOS (4/.24 = 16/1) NMOS (2/.24 = 8/1) ndif nfet metal2-metal1 via ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.49 Θεοχαρίδης, ΗΜΥ, 2017
50 Simplified Layouts l Online design rule checking (DRC) l Automatic fet generation (just overlap poly and diffusion and it creates a transistor) l Simplified via/contact generation v12, v23, v34, v45 ct, nwc, pwc 0.44 x 0.44 m1 0.3 x 0.3 ct 0.44 x 0.44 poly ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.50 Θεοχαρίδης, ΗΜΥ, 2017
51 Design Rule Checker poly_not_fet to all_diff minimum spacing = 0.14 um ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.51 Θεοχαρίδης, ΗΜΥ, 2017
52 Design Rules l Interface between the circuit designer and process engineer l Guidelines for constructing process masks l Unit dimension: minimum line width scalable design rules: lambda parameter absolute dimensions: micron rules l Rules constructed to ensure that design works even when small fab errors (within some tolerance) occur l A complete set includes set of layers intra-layer: relations between objects in the same layer inter-layer: relations between objects on different layers ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.52 Θεοχαρίδης, ΗΜΥ, 2017
53 l Why Have Design Rules? To be able to tolerate some level of fabrication errors such as 1. Mask misalignment 2. Dust 3. Process parameters (e.g., lateral diffusion) 4. Rough surfaces ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.53 Θεοχαρίδης, ΗΜΥ, 2017
54 Intra-Layer Design Rule Origins l Minimum dimensions (e.g., widths) of objects on each layer to maintain that object after fab minimum line width is set by the resolution of the patterning process (photolithography) l Minimum spaces between objects (that are not related) on the same layer to ensure they will not short after fab 0.3 micron micron ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.54 Θεοχαρίδης, ΗΜΥ, 2017
55 Intra-Layer Design Rules Same Potential Different Potential Well 10 0 or 6 9 Polysilicon 2 2 Active Select Contact or Via Hole 2 2 Metal1 Metal ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.55 Θεοχαρίδης, ΗΜΥ, 2017
56 Inter-Layer Design Rule Origins 1. Transistor rules transistor formed by overlap of active and poly layers Transistors Catastrophic error Unrelated Poly & Diffusion Thinner diffusion, but still working ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.56 Θεοχαρίδης, ΗΜΥ, 2017
57 Transistor Layout ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.57 Θεοχαρίδης, ΗΜΥ, 2017
58 Layers! ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.58 Θεοχαρίδης, ΗΜΥ, 2017
59 Inter-Layer Design Rule Origins, Con t 2. Contact and via rules M1 contact to p-diffusion M1 contact to n-diffusion M1 contact to poly Mx contact to My Contact Mask Via Masks both materials 0.3 Contact: 0.44 x 0.44 mask misaligned 0.14 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.59 Θεοχαρίδης, ΗΜΥ, 2017
60 Vias and Contacts 2 1 Via Metal to Active Contact 1 Metal to Poly Contact ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.60 Θεοχαρίδης, ΗΜΥ, 2017
61 National 0.18µm process cutaway ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.61 Θεοχαρίδης, ΗΜΥ, 2017
62 Advanced Metallization - Copper Copper versus Aluminum ~ 40% lower resistivity ~ 10 less electromigration ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.62 Θεοχαρίδης, ΗΜΥ, 2017
63 An AMD 50nm transistor ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.63 Θεοχαρίδης, ΗΜΥ, 2017
64 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.64 Θεοχαρίδης, ΗΜΥ, 2017
65 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.65 Θεοχαρίδης, ΗΜΥ, 2017
66 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.66 Θεοχαρίδης, ΗΜΥ, 2017
67 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.67 Θεοχαρίδης, ΗΜΥ, 2017
68 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.68 Θεοχαρίδης, ΗΜΥ, 2017
69 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.69 Θεοχαρίδης, ΗΜΥ, 2017
70 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.70 Θεοχαρίδης, ΗΜΥ, 2017
71 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.71 Θεοχαρίδης, ΗΜΥ, 2017
72 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.72 Θεοχαρίδης, ΗΜΥ, 2017
73 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.73 Θεοχαρίδης, ΗΜΥ, 2017
74 Defects kill yield and drive up manufacturing cost, so defect inspection is vital in the Fab. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.74 Θεοχαρίδης, ΗΜΥ, 2017
75 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.75 Θεοχαρίδης, ΗΜΥ, 2017
76 Wafer probe or test is the first time that chips are tested to see if they function as they were designed to do. ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.76 Θεοχαρίδης, ΗΜΥ, 2017
77 Redundancy Repair is a process step almost exclusively used for memory chips ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.77 Θεοχαρίδης, ΗΜΥ, 2017
78 each pad on the die is connected to a corresponding pin on the package frame via a thin gold or aluminum wire (approx " diameter). ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.78 Θεοχαρίδης, ΗΜΥ, 2017
79 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.79 Θεοχαρίδης, ΗΜΥ, 2017
80 ΗΜΥ307 Δ5 Διαδικασία Παραγωγής.80 Θεοχαρίδης, ΗΜΥ, 2017
HY330 Ψηφιακά Κυκλώματα - Εισαγωγή στα Συστήματα VLSI Διδάσκων: Χ. Σωτηρίου, Βοηθοί: θα ανακοινωθούν http://inf-server.inf.uth.gr/courses/ce330 1 Διαδικασία CMOS 2 1 Μια σύγχρονη διαδικασία CMOS gate-oxide
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΔΙΑΛΕΞΗ 4: CMOS Αντιστροφέας (Inverter) ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) [Προσαρμογή από Rabaey s Digital Integrated Circuits, 2002,
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017 ΔΙΑΛΕΞΗ 4: CMOS Αντιστροφέας (Inverter) ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) [Προσαρμογή από Rabaey s Digital Integrated Circuits, 2002,
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 3: Εισαγωγή στη Διαδικασία Κατασκευής (CMOS Processing) Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών
ΗΜΥ 210 ΣΧΕΔΙΑΣΜΟΣ ΨΗΦΙΑΚΩΝ ΣΥΣΤΗΜΑΤΩΝ
ΗΜΥ 210 ΣΧΕΔΙΑΣΜΟΣ ΨΗΦΙΑΚΩΝ ΣΥΣΤΗΜΑΤΩΝ Χειµερινό Εξάµηνο 2016 ΔΙΑΛΕΞΗ 5: Το CMOS transistor και κυκλώµατα CMOS ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ Επίκουρος Καθηγητής, ΗΜΜΥ (ttheocharides@ucy.ac.cy) Περίληψη q Κυκλώµατα
Capacitors - Capacitance, Charge and Potential Difference
Capacitors - Capacitance, Charge and Potential Difference Capacitors store electric charge. This ability to store electric charge is known as capacitance. A simple capacitor consists of 2 parallel metal
the total number of electrons passing through the lamp.
1. A 12 V 36 W lamp is lit to normal brightness using a 12 V car battery of negligible internal resistance. The lamp is switched on for one hour (3600 s). For the time of 1 hour, calculate (i) the energy
[1] P Q. Fig. 3.1
![[1] P Q. Fig. 3.1](/thumbs/79/80362156.jpg "[1] P Q. Fig. 3.1")
1 (a) Define resistance....... [1] (b) The smallest conductor within a computer processing chip can be represented as a rectangular block that is one atom high, four atoms wide and twenty atoms long. One
Right Rear Door. Let's now finish the door hinge saga with the right rear door
Right Rear Door Let's now finish the door hinge saga with the right rear door You may have been already guessed my steps, so there is not much to describe in detail. Old upper one file:///c /Documents
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 1: Εισαγωγή στη Σχεδίαση Ολοκληρωμένων Κυκλωμάτων Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών
Τρανζίστορ Επίδρασης Πεδίου Field-effect transistors (FET)
Τρανζίστορ Επίδρασης Πεδίου Field-effect transistors (FET) Χρησιµοποιούνται σε κλίµακα υψηλής ολοκλήρωσης VLSI Χρησιµοποιούνται και σε αναλογικούς ενισχυτές καθώς και στο στάδιο εξόδου ενισχυτών Ισχύος-
ΚΥΠΡΙΑΚΗ ΕΤΑΙΡΕΙΑ ΠΛΗΡΟΦΟΡΙΚΗΣ CYPRUS COMPUTER SOCIETY ΠΑΓΚΥΠΡΙΟΣ ΜΑΘΗΤΙΚΟΣ ΔΙΑΓΩΝΙΣΜΟΣ ΠΛΗΡΟΦΟΡΙΚΗΣ 19/5/2007
Οδηγίες: Να απαντηθούν όλες οι ερωτήσεις. Αν κάπου κάνετε κάποιες υποθέσεις να αναφερθούν στη σχετική ερώτηση. Όλα τα αρχεία που αναφέρονται στα προβλήματα βρίσκονται στον ίδιο φάκελο με το εκτελέσιμο
Potential Dividers. 46 minutes. 46 marks. Page 1 of 11
Potential Dividers 46 minutes 46 marks Page 1 of 11 Q1. In the circuit shown in the figure below, the battery, of negligible internal resistance, has an emf of 30 V. The pd across the lamp is 6.0 V and
Άδεια Χρήσης Το παρόν εκπαιδευτικό υλικό υπόκειται σε άδειες χρήσης Creative Commons. Για εκπαιδευτικό υλικό, όπως εικόνες, που υπόκειται σε άδεια
Άδεια Χρήσης Το παρόν εκπαιδευτικό υλικό υπόκειται σε άδειες χρήσης Creative Commons. Για εκπαιδευτικό υλικό, όπως εικόνες, που υπόκειται σε άδεια χρήσης άλλου τύπου, αυτή πρέπει να αναφέρεται ρητώς. Example
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 6.2: Συνδυαστική Λογική - Σύνθετες Πύλες Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών Μηχανικών
Instruction Execution Times
1 C Execution Times InThisAppendix... Introduction DL330 Execution Times DL330P Execution Times DL340 Execution Times C-2 Execution Times Introduction Data Registers This appendix contains several tables
Main source: "Discrete-time systems and computer control" by Α. ΣΚΟΔΡΑΣ ΨΗΦΙΑΚΟΣ ΕΛΕΓΧΟΣ ΔΙΑΛΕΞΗ 4 ΔΙΑΦΑΝΕΙΑ 1
Main source: "Discrete-time systems and computer control" by Α. ΣΚΟΔΡΑΣ ΨΗΦΙΑΚΟΣ ΕΛΕΓΧΟΣ ΔΙΑΛΕΞΗ 4 ΔΙΑΦΑΝΕΙΑ 1 A Brief History of Sampling Research 1915 - Edmund Taylor Whittaker (1873-1956) devised a
Section 8.3 Trigonometric Equations
99 Section 8. Trigonometric Equations Objective 1: Solve Equations Involving One Trigonometric Function. In this section and the next, we will exple how to solving equations involving trigonometric functions.
Finite Field Problems: Solutions
Finite Field Problems: Solutions 1. Let f = x 2 +1 Z 11 [x] and let F = Z 11 [x]/(f), a field. Let Solution: F =11 2 = 121, so F = 121 1 = 120. The possible orders are the divisors of 120. Solution: The
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 6.1: Συνδυαστική Λογική - Βασικές Πύλες Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών Μηχανικών
EE512: Error Control Coding
EE512: Error Control Coding Solution for Assignment on Finite Fields February 16, 2007 1. (a) Addition and Multiplication tables for GF (5) and GF (7) are shown in Tables 1 and 2. + 0 1 2 3 4 0 0 1 2 3
Strain gauge and rosettes
Strain gauge and rosettes Introduction A strain gauge is a device which is used to measure strain (deformation) on an object subjected to forces. Strain can be measured using various types of devices classified
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ CMOS. Εαρινό Εξάμηνο ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017 ΔΙΑΛΕΞΗ 6: ΚΥΚΛΩΜΑΤΑ CMOS ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) [Προσαρμογή από Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
ΚΥΠΡΙΑΚΗ ΕΤΑΙΡΕΙΑ ΠΛΗΡΟΦΟΡΙΚΗΣ CYPRUS COMPUTER SOCIETY ΠΑΓΚΥΠΡΙΟΣ ΜΑΘΗΤΙΚΟΣ ΔΙΑΓΩΝΙΣΜΟΣ ΠΛΗΡΟΦΟΡΙΚΗΣ 6/5/2006
Οδηγίες: Να απαντηθούν όλες οι ερωτήσεις. Ολοι οι αριθμοί που αναφέρονται σε όλα τα ερωτήματα είναι μικρότεροι το 1000 εκτός αν ορίζεται διαφορετικά στη διατύπωση του προβλήματος. Διάρκεια: 3,5 ώρες Καλή
HOMEWORK 4 = G. In order to plot the stress versus the stretch we define a normalized stretch:
HOMEWORK 4 Problem a For the fast loading case, we want to derive the relationship between P zz and λ z. We know that the nominal stress is expressed as: P zz = ψ λ z where λ z = λ λ z. Therefore, applying
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
(1) Describe the process by which mercury atoms become excited in a fluorescent tube (3)
Q1. (a) A fluorescent tube is filled with mercury vapour at low pressure. In order to emit electromagnetic radiation the mercury atoms must first be excited. (i) What is meant by an excited atom? (1) (ii)
Homework 3 Solutions
Homework 3 Solutions Igor Yanovsky (Math 151A TA) Problem 1: Compute the absolute error and relative error in approximations of p by p. (Use calculator!) a) p π, p 22/7; b) p π, p 3.141. Solution: For
ECE 407 Computer Aided Design for Electronic Systems. CMOS Logic. Instructor: Maria K. Michael. Overview
407 Computer Aided Design for Electronic Systems CMOS Logic Instructor: Maria K. Michael 1 Overview MOS transistors (nmos, pmos) CMOS processing technology CMOS design/layout rules MOS transistors as ideal
Ανάπτυξη οξειδίου του πυριτίου σε αντιδραστήρα πλάσματος και ηλεκτρικός χαρακτηρισμός του
ΕΘΝΙΚΟ ΚΑΙ ΚΑΠΟΔΙΣΤΡΙΑΚΟ ΠΑΝΕΠΙΣΤΗΜΙΟ ΑΘΗΝΩΝ ΣΧΟΛΗ ΘΕΤΙΚΩΝ ΕΠΙΣΤΗΜΩΝ ΤΜΗΜΑ ΠΛΗΡΟΦΟΡΙΚΗΣ ΚΑΙ ΤΗΛΕΠΙΚΟΙΝΩΝΙΩΝ ΔΙΑΤΜΗΜΑΤΙΚΟ ΠΡΟΓΡΑΜΜΑ ΜΕΤΑΠΤΥΧΙΑΚΩΝ ΣΠΟΥΔΩΝ ΣΤΗ ΜΙΚΡΟΗΛΕΚΤΡΟΝΙΚΗ ΔΙΠΛΩΜΑΤΙΚΗ ΕΡΓΑΣΙΑ Ανάπτυξη
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 2: Το Τρανζίστορ Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών Μηχανικών Τ.Ε. Άδειες Χρήσης
Modbus basic setup notes for IO-Link AL1xxx Master Block
n Modbus has four tables/registers where data is stored along with their associated addresses. We will be using the holding registers from address 40001 to 49999 that are R/W 16 bit/word. Two tables that
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
derivation of the Laplacian from rectangular to spherical coordinates
derivation of the Laplacian from rectangular to spherical coordinates swapnizzle 03-03- :5:43 We begin by recognizing the familiar conversion from rectangular to spherical coordinates (note that φ is used
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
Φυσική σχεδίαση ολοκληρωμένων κυκλωμάτων
Φυσική σχεδίαση ολοκληρωμένων κυκλωμάτων Βασικές έννοιες και τεχνικές Γιώργος Δημητρακόπουλος Δημοκριτειο Πανεπιστήμιο Θράκης Φθινόπωρο 2013 Ψηφιακά ολοκληρωμένα κυκλώματα 1 Τι χρειαζόμαστε για να φτιάξουμε
Assalamu `alaikum wr. wb.
LUMP SUM Assalamu `alaikum wr. wb. LUMP SUM Wassalamu alaikum wr. wb. Assalamu `alaikum wr. wb. LUMP SUM Wassalamu alaikum wr. wb. LUMP SUM Lump sum lump sum lump sum. lump sum fixed price lump sum lump
The Simply Typed Lambda Calculus
Type Inference Instead of writing type annotations, can we use an algorithm to infer what the type annotations should be? That depends on the type system. For simple type systems the answer is yes, and
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 6.3: Συνδυαστική Λογική - Δυναμικές Πύλες Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών Μηχανικών
3.4 SUM AND DIFFERENCE FORMULAS. NOTE: cos(α+β) cos α + cos β cos(α-β) cos α -cos β
3.4 SUM AND DIFFERENCE FORMULAS Page Theorem cos(αβ cos α cos β -sin α cos(α-β cos α cos β sin α NOTE: cos(αβ cos α cos β cos(α-β cos α -cos β Proof of cos(α-β cos α cos β sin α Let s use a unit circle
Fractional Colorings and Zykov Products of graphs
Fractional Colorings and Zykov Products of graphs Who? Nichole Schimanski When? July 27, 2011 Graphs A graph, G, consists of a vertex set, V (G), and an edge set, E(G). V (G) is any finite set E(G) is
Μικροηλεκτρονική - VLSI
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ Ανώτατο Εκπαιδευτικό Ίδρυμα Πειραιά Τεχνολογικού Τομέα Μικροηλεκτρονική - VLSI Ενότητα 4.1: Μέθοδοι Υλοποίησης Ολοκληρωμένων Κυκλωμάτων Κυριάκης - Μπιτζάρος Ευστάθιος Τμήμα Ηλεκτρονικών
HY121 Ηλεκτρικϊ Κυκλώματα
HY121 Ηλεκτρικϊ Κυκλώματα Διδϊςκων: Χ. Σωτηρύου, Βοηθού: Ε. Βαςιλϊκησ, Δ. Πούλιοσ http://www.csd.uoc.gr/~hy121 1 HY121 - Διαδικαζία Καηαζκεςήρ CMOS Διαδικαςύα CMOS 2 1 Μια ςύγχρονη διαδικαςύα CMOS gate-oxide
Χρήση υπολογιστικών τεχνικών στον έλεγχο Ολοκληρωμένων Κυκλωμάτων. Ioannis Voyiatzis Τμήμα Μηχανικών Πληροφορικής Τ.Ε. TEI Αθήνας
Χρήση υπολογιστικών τεχνικών στον έλεγχο Ολοκληρωμένων Κυκλωμάτων Ioannis Voyiatzis Τμήμα Μηχανικών Πληροφορικής Τ.Ε. TEI Αθήνας Outline Τρανζίστορ και Ολοκληρωμένα Κυκλώματα (ΟΚ) Έλεγχος ΟΚ - Προκλήσεις
HY523 Εργαςτηριακό Σχεδύαςη Ψηφιακών Κυκλωμϊτων με εργαλεύα Ηλεκτρονικού Σχεδιαςτικού Αυτοματιςμού.
HY523 Εργαςτηριακό Σχεδύαςη Ψηφιακών Κυκλωμϊτων με εργαλεύα Ηλεκτρονικού Σχεδιαςτικού Αυτοματιςμού Διδϊςκων: Χ. Σωτηρύου, Βοηθόσ: Π. Ματτθαιϊκησ http://www.csd.uoc.gr/~hy422 1 Διαδικαςύα CMOS 2 1 Μια ςύγχρονη
Code Breaker. TEACHER s NOTES
TEACHER s NOTES Time: 50 minutes Learning Outcomes: To relate the genetic code to the assembly of proteins To summarize factors that lead to different types of mutations To distinguish among positive,
Econ 2110: Fall 2008 Suggested Solutions to Problem Set 8 questions or comments to Dan Fetter 1
Eon : Fall 8 Suggested Solutions to Problem Set 8 Email questions or omments to Dan Fetter Problem. Let X be a salar with density f(x, θ) (θx + θ) [ x ] with θ. (a) Find the most powerful level α test
Calculating the propagation delay of coaxial cable
Your source for quality GNSS Networking Solutions and Design Services! Page 1 of 5 Calculating the propagation delay of coaxial cable The delay of a cable or velocity factor is determined by the dielectric
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
ΕΙΣΑΓΩΓΗ ΣΤΗ ΣΤΑΤΙΣΤΙΚΗ ΑΝΑΛΥΣΗ
ΕΙΣΑΓΩΓΗ ΣΤΗ ΣΤΑΤΙΣΤΙΚΗ ΑΝΑΛΥΣΗ ΕΛΕΝΑ ΦΛΟΚΑ Επίκουρος Καθηγήτρια Τµήµα Φυσικής, Τοµέας Φυσικής Περιβάλλοντος- Μετεωρολογίας ΓΕΝΙΚΟΙ ΟΡΙΣΜΟΙ Πληθυσµός Σύνολο ατόµων ή αντικειµένων στα οποία αναφέρονται
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
Phys460.nb Solution for the t-dependent Schrodinger s equation How did we find the solution? (not required)
Phys460.nb 81 ψ n (t) is still the (same) eigenstate of H But for tdependent H. The answer is NO. 5.5.5. Solution for the tdependent Schrodinger s equation If we assume that at time t 0, the electron starts
department listing department name αχχουντσ ϕανε βαλικτ δδσϕηασδδη σδηφγ ασκϕηλκ τεχηνιχαλ αλαν ϕουν διξ τεχηνιχαλ ϕοην µαριανι
She selects the option. Jenny starts with the al listing. This has employees listed within She drills down through the employee. The inferred ER sttricture relates this to the redcords in the databasee
Surface Mount Multilayer Chip Capacitors for Commodity Solutions
Surface Mount Multilayer Chip Capacitors for Commodity Solutions Below tables are test procedures and requirements unless specified in detail datasheet. 1) Visual and mechanical 2) Capacitance 3) Q/DF
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
2 Composition. Invertible Mappings
Arkansas Tech University MATH 4033: Elementary Modern Algebra Dr. Marcel B. Finan Composition. Invertible Mappings In this section we discuss two procedures for creating new mappings from old ones, namely,
Πυρίτιο. Η βάση για τα σύγχρονα ημιαγωγικά κυκλώματα είναι. Ένας κρύσταλλος καθαρού πυριτίου συμπεριφέρεται
Τεχνολογία CMOS Πυρίτιο Η βάση για τα σύγχρονα ημιαγωγικά κυκλώματα είναι το πυρίτιο Ένας κρύσταλλος καθαρού πυριτίου συμπεριφέρεται σαν μονωτής Εάν προσθέσουμε προσμόξεις (impurities) τότε αλλάζουμε την
Matrices and Determinants
Matrices and Determinants SUBJECTIVE PROBLEMS: Q 1. For what value of k do the following system of equations possess a non-trivial (i.e., not all zero) solution over the set of rationals Q? x + ky + 3z
CYTA Cloud Server Set Up Instructions
CYTA Cloud Server Set Up Instructions ΕΛΛΗΝΙΚΑ ENGLISH Initial Set-up Cloud Server To proceed with the initial setup of your Cloud Server first login to the Cyta CloudMarketPlace on https://cloudmarketplace.cyta.com.cy
Areas and Lengths in Polar Coordinates
Kiryl Tsishchanka Areas and Lengths in Polar Coordinates In this section we develop the formula for the area of a region whose boundary is given by a polar equation. We need to use the formula for the
Solutions to the Schrodinger equation atomic orbitals. Ψ 1 s Ψ 2 s Ψ 2 px Ψ 2 py Ψ 2 pz
Solutions to the Schrodinger equation atomic orbitals Ψ 1 s Ψ 2 s Ψ 2 px Ψ 2 py Ψ 2 pz ybridization Valence Bond Approach to bonding sp 3 (Ψ 2 s + Ψ 2 px + Ψ 2 py + Ψ 2 pz) sp 2 (Ψ 2 s + Ψ 2 px + Ψ 2 py)
Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης. Επανάληψη μέρος 2 ο. Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών
AO Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης Επανάληψη μέρος 2 ο Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών Άδεια Χρήσης Το παρόν εκπαιδευτικό υλικό υπόκειται σε
CE 530 Molecular Simulation
C 53 olecular Siulation Lecture Histogra Reweighting ethods David. Kofke Departent of Cheical ngineering SUNY uffalo kofke@eng.buffalo.edu Histogra Reweighting ethod to cobine results taken at different
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
Overview. Transition Semantics. Configurations and the transition relation. Executions and computation
Overview Transition Semantics Configurations and the transition relation Executions and computation Inference rules for small-step structural operational semantics for the simple imperative language Transition
GAUGE BLOCKS. Grade 0 Tolerance for the variation in length. Limit deviation of length. ± 0.25μm. 0.14μm ±0.80μm. ± 1.90μm. ± 0.40μm. ± 1.
GAUGE BLOCKS Accuracy according to ISO650 Nominal length (mm) Limit deviation of length Grade 0 Tolerance for the variation in length Grade Grade Grade Grade 2 Limit deviations of Tolerance for the Limit
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
Συστήματα Διαχείρισης Βάσεων Δεδομένων
ΕΛΛΗΝΙΚΗ ΔΗΜΟΚΡΑΤΙΑ ΠΑΝΕΠΙΣΤΗΜΙΟ ΚΡΗΤΗΣ Συστήματα Διαχείρισης Βάσεων Δεδομένων Φροντιστήριο 9: Transactions - part 1 Δημήτρης Πλεξουσάκης Τμήμα Επιστήμης Υπολογιστών Tutorial on Undo, Redo and Undo/Redo
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2017 ΔΙΑΛΕΞΗ 2: ΑΞΙΟΛΟΓΗΣΗ ΨΗΦΙΑΚΩΝ ΚΥΚΛΩΜΑΤΩΝ ΣΤΟΧΟΙ ΣΧΕΔΙΑΣΗΣ ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) [Προσαρμογή από Rabaey s Digital Integrated
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features
Quick Installation Guide
A Installation 1 F H B E C D G 2 www.trust.com/17528/faq Quick Installation Guide C C D Freewave Wireless Audio Set 17528/ 17529 D Installation Configuration Windows XP 4 5 8 Windows 7/ Vista 6 7 9 10
Lecture 2. Soundness and completeness of propositional logic
Lecture 2 Soundness and completeness of propositional logic February 9, 2004 1 Overview Review of natural deduction. Soundness and completeness. Semantics of propositional formulas. Soundness proof. Completeness
CMOS Technology for Computer Architects
CMOS Technology for Computer Architects Iakovos Mavroidis Giorgos Passas Manolis Katevenis Lecture 13: On chip SRAM Technology FORTH ICS / EURECCA & UoC GREECE ABC A A E F A BCDAECF A AB C DE ABCDAECF
Second Order RLC Filters
ECEN 60 Circuits/Electronics Spring 007-0-07 P. Mathys Second Order RLC Filters RLC Lowpass Filter A passive RLC lowpass filter (LPF) circuit is shown in the following schematic. R L C v O (t) Using phasor
Exercises in Electromagnetic Field
DR. GYURCSEK ISTVÁN Exercises in Electromagnetic Field Sources and additional materials (recommended) Gyurcsek I. Elmer Gy.: Theories in Electric Circuits, Globe Edit 206, ISBN:97833307343 Simonyi K.:
TMA4115 Matematikk 3
TMA4115 Matematikk 3 Andrew Stacey Norges Teknisk-Naturvitenskapelige Universitet Trondheim Spring 2010 Lecture 12: Mathematics Marvellous Matrices Andrew Stacey Norges Teknisk-Naturvitenskapelige Universitet
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
Graded Refractive-Index
Graded Refractive-Index Common Devices Methodologies for Graded Refractive Index Methodologies: Ray Optics WKB Multilayer Modelling Solution requires: some knowledge of index profile n 2 x Ray Optics for
ST5224: Advanced Statistical Theory II
ST5224: Advanced Statistical Theory II 2014/2015: Semester II Tutorial 7 1. Let X be a sample from a population P and consider testing hypotheses H 0 : P = P 0 versus H 1 : P = P 1, where P j is a known
ΔΙΠΛΩΜΑΤΙΚΗ ΕΡΓΑΣΙΑ. του φοιτητή του Τμήματος Ηλεκτρολόγων Μηχανικών και. Τεχνολογίας Υπολογιστών της Πολυτεχνικής Σχολής του. Πανεπιστημίου Πατρών
ΠΑΝΕΠΙΣΤΗΜΙΟ ΠΑΤΡΩΝ ΤΜΗΜΑ ΗΛΕΚΤΡΟΛΟΓΩΝ ΜΗΧΑΝΙΚΩΝ ΚΑΙ ΤΕΧΝΟΛΟΓΙΑΣ ΥΠΟΛΟΓΙΣΤΩΝ ΤΟΜΕΑΣ ΣΥΣΤΗΜΑΤΩΝ ΗΛΕΚΤΡΙΚΗΣ ΕΝΕΡΓΕΙΑΣ ΕΡΓΑΣΤΗΡΙΟ ΗΛΕΚΤΡΟΜΗΧΑΝΙΚΗΣ ΜΕΤΑΤΡΟΠΗΣ ΕΝΕΡΓΕΙΑΣ ΔΙΠΛΩΜΑΤΙΚΗ ΕΡΓΑΣΙΑ του φοιτητή του
Reminders: linear functions
Reminders: linear functions Let U and V be vector spaces over the same field F. Definition A function f : U V is linear if for every u 1, u 2 U, f (u 1 + u 2 ) = f (u 1 ) + f (u 2 ), and for every u U
EPL 603 TOPICS IN SOFTWARE ENGINEERING. Lab 5: Component Adaptation Environment (COPE)
EPL 603 TOPICS IN SOFTWARE ENGINEERING Lab 5: Component Adaptation Environment (COPE) Performing Static Analysis 1 Class Name: The fully qualified name of the specific class Type: The type of the class
Σχεδίαση CMOS Ψηφιακών Ολοκληρωμένων Κυκλωμάτων
Σχεδίαση CMOS Ψηφιακών Ολοκληρωμένων Κυκλωμάτων Αγγελική Αραπογιάννη Σχολή Θετικών Επιστημών Τμήμα Πληροφορικής και Τηλεπικοινωνιών Πυρίτιο Η βάση για τα σύγχρονα ημιαγωγικά κυκλώματα είναι το πυρίτιο
6.1. Dirac Equation. Hamiltonian. Dirac Eq.
6.1. Dirac Equation Ref: M.Kaku, Quantum Field Theory, Oxford Univ Press (1993) η μν = η μν = diag(1, -1, -1, -1) p 0 = p 0 p = p i = -p i p μ p μ = p 0 p 0 + p i p i = E c 2 - p 2 = (m c) 2 H = c p 2
C.S. 430 Assignment 6, Sample Solutions
C.S. 430 Assignment 6, Sample Solutions Paul Liu November 15, 2007 Note that these are sample solutions only; in many cases there were many acceptable answers. 1 Reynolds Problem 10.1 1.1 Normal-order
About these lecture notes. Simply Typed λ-calculus. Types
About these lecture notes Simply Typed λ-calculus Akim Demaille akim@lrde.epita.fr EPITA École Pour l Informatique et les Techniques Avancées Many of these slides are largely inspired from Andrew D. Ker
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
Example Sheet 3 Solutions
Example Sheet 3 Solutions. i Regular Sturm-Liouville. ii Singular Sturm-Liouville mixed boundary conditions. iii Not Sturm-Liouville ODE is not in Sturm-Liouville form. iv Regular Sturm-Liouville note
Other Test Constructions: Likelihood Ratio & Bayes Tests
Other Test Constructions: Likelihood Ratio & Bayes Tests Side-Note: So far we have seen a few approaches for creating tests such as Neyman-Pearson Lemma ( most powerful tests of H 0 : θ = θ 0 vs H 1 :
Démographie spatiale/spatial Demography
ΠΑΝΕΠΙΣΤΗΜΙΟ ΘΕΣΣΑΛΙΑΣ Démographie spatiale/spatial Demography Session 1: Introduction to spatial demography Basic concepts Michail Agorastakis Department of Planning & Regional Development Άδειες Χρήσης