2004 62 7, 680 685 ACTA CHIMICA SINICA Vol 62, 2004 No 7, 680 685 AFM a b Ξ, a Ξ ( a 730000) ( b 730000) (AFM) (AAO) :AAO H 3 PO 4 AAO ; H 2 C 2 O 4 AAO,,, AAO, Y T (AFM), (AAO),, Unstable Growth of Anodic Aluminum Oxide Investigated by AFM KONG, Ling2Bin a CHEN, Miao b LI, Hu2Lin Ξ, a ( a College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000) ( b State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000) Abstract Atomic force microscope (AFM) was utilized to investigate the unstable growth of porous anodic aluminum oxide (AAO) membrane The results showed that the unstable growth of AAO membrane resulted in the decrease of the order degree of its special nano2channels The AAO membrane growing in H 3 PO 4 solution is unstable, while the growth stability in H 2 C 2 O 4 solution will depend on its anodized voltage and current density : stable in low voltage and low current density while unstable in high voltage and high current density By controlling the condition of the anodized process, the special AAO template with branched channel structures can be formed because of the unstable growth of the membrane nanotubes by using the template method This may provide a new opportunity for fabricating Y2shape or T2shape nanowires and Keywords atomic force microscope, anodic aluminum oxide, unstable growth, branched structure [2,,,3], AAO [1], (, Y T ),, Y [4 6] ; H 2 C 2 O 4 [7 (AAO) AAO AAO,8], AAO Ξ E2mail : lihl @lzu edu cn Received March 7, 2003 ; revised October 14, 2003 ; accepted December 3, 2003 (No 60171004)
No 7 : AFM 681 [9 H 3 PO 4 AAO,10] 70, H 3 PO 4 6 mol/ L H 3 PO 4, AAO Y T, TEM, (AFM) H 3 PO 4 H 2 C 2 O 4 AAO 1 3, AAO C 2 H 5 OH, HClO 4, H 3 PO 4, H 2 C 2 O 4, HgCl 2, H 2 CrO 4, FeSO 4, AAO 7H 2 O Y T SOLVER P47 ( ) ;Hitachi 600 ( ) 1 2 1 1 AAO ( :35 mm 15 mm 0115 mm), 95 %, 20, AFM 1a,b, H 3 PO 4, C 2 H 5 OH HClO 4 [ V (C 2 H 5 OH) V ( HClO 4 ) = 4 1 ], AAO (10 V) 5 min,, H 3 PO 4 AAO AAO,, H 3 PO 4 (015 mol/ L) H 2 C 2 O 4 Y T 1c H 2 C 2 O 4 40 V (0115 mol/ L) 40 V 80 V AAO, 1 h, 10 ml HgCl 2 1 h, AAO, AAO AFM [11], AAO, H 3 PO 4 (6 wt %) H 2 CrO 4 (118 wt %), 60 1d, 80 V, 3 h, AAO,, H 2 C 2 O 4 AAO, 1 h,, AFM H 3 PO 4 AAO AAO, (, 110 mol/ L H 3 PO 4 ), 90 V, AAO AFM, 2 AAO AFM, AAO (CVD) 1 AAO AAO, AAO,, 1 2 AAO ( AAO AAO ( FeSO 4 7H 2 O), ), AAO, AAO 20 ml/ min H 2 2,, 500 10 Pa,, 700 20 ml/ / 1 : H 3 PO 4 min H 2, AAO Fe AAO, H 3 PO 4 H 2 Fe, 1 h AAO Y T ; 20 ml/ min C 2 H 2 10 ml/ min H 2, H 2 C 2 O 4 AAO C 2 H 2, AAO Fe,
682 Vol 62, 2004 1 AAO AFM Figure 1 AFM images of the surface of AAO template anodized at different condition (a) 40 V, H 3 PO 4 ; (b) 80 V, H 3 PO 4 ; (c) 40 V, H 2 C 2 O 4 ; (d) 80 V, H 2 C 2 O 4 AAO, 90 V 110 mol/ L H 3 PO 4 ( ), AAO H 2 SO 4 H 2 C 2 O 4 H 3 PO 4 AAO [7,12,13],, 100 V 3a AAO H 3 PO 4,, 3b, 3c 3a,,AAO, H 3 PO 4,, AAO, H 2 C 2 O 4,, H 3 PO 4,, H 3 PO 4, 3a 1, ( 3c1), 3a 2, ( 3c2) 3,, AAO, 4, ( 3c3 3c4) AAO,,
No 7 : AFM 683 2 AAO AFM Figure 2 AFM images of the barrier layer of AAO template anodized at different condition (a) 40 V, H 3 PO 4 ; (b) 80 V, H 3 PO 4 ; (c) 40 V, H 2 C 2 O 4 ; (d) 80 V, H 2 C 2 O 4 AFM,,, AFM :,,, AAO, AAO AAO, H 3 PO 4 AAO, CVD AAO AAO AAO, 4 AAO 4a 015 mol/ L H 3 PO 4, AAO, 4b 110 mol/ L Y AAO, AAO H 3 PO 4 AAO Y T 3, AAO AAO ; H 2 SO 4 H 2 C 2 O 4
684 Vol 62, 2004 3 1 0 mol/ L H 3 PO 4 90 V AAO AFM Figure 3 AFM images and the corresponding line profiles of the barrier layer and surface structures of AAO template formed under 90 V in 1 0 mol/ L phosphoric acid solution (a) barrier layer structure ; (b) surface structure ; (c) line profiles 4 TEM Figure 4 TEM photographs of the carbon nanotubes (a) straight structure ; (b) branched structure
No 7 : AFM 685 References 1 Fan, S ; Chapline, M G ; Franklin, N R ; Tombler, T W ; Cassell, A M ; Dai, H Science 1999, 283, 512 2 Martin, C R Science 1994, 266, 1961 3 Jiang, K2Y ; Dong, J 2J ; Wang, Y ; Gui, L2L ; Tang, Y2 Q Acta Chim Sinica 2000, 58 (7), 737 (in Chinese) (,,,,,, 2000, 58 (7), 737 ) 4 Li, J ; Papadopoulos, C ; Xu, J 2M Nature 1999, 402, 253 5 Yuan, Z H ; Huang, H ; Liu, L ; Fan, S2S Chem Phys Lett 2001, 345, 39 6 Gao, T ; Meng, G ; Zhang, J ; Sun, S ; Zhang, L Appl Phys A 2002, 74, 403 7 Sui, Y C ; Gonzalez2Leon, J A ; Bermudez, A ; Saniger, J M Carbon 2001, 39, 1709 8 Sui, Y C ; Acosta, D R ; Gonzalez2Leon, J A ; Bermudez, A ; Feuchtwanger, J ; Cui, B Z ; Flores, J O ; Saniger, J M J Phys Chem B 2001, 105, 1523 9 Wang, C 2W ; Li, M 2K ; Pan, S2L ; Li, H2L Chin Sci Bull 2000, 45 (5), 493 (in Chinese) (,,,,, 2000, 45 (5), 493 ) 10 Li, M2K ; Lu, M ; Wang, C2W ; Li, H2L Sci China, Ser B 2002, 32 (3), 204 (in Chinese) (,,,, (B ), 2002, 32 (3), 204 ) 11 Wu, J 2H ; Zou, J 2P ; Pu, L ; Zhu, Q ; Bao, X2M Chin J Chem Phys 2000, 13 (2), 203 (in Chinese) (,,,,,, 2000, 13 (2), 203 ) 12 Shingubara, S ; Okino, O ; Sayama, Y ; Sakaue, H ; Takahagi, T Solid2State Electron 1999, 43, 1143 13 Sui, Y C ; Cui, B Z ; Guardian, R ; Acosta, D R ; Martinez, L ; Perez, R Carbon 2002, 40, 1011 (A0303075 CHENG, B ; LING, J )
No 7 Graphical Abstract 3 Unstable Growth of Anodic Aluminum Oxide Investigated by AFM KONG, Ling2Bin ; CHEN, Miao ; LI, Hu2Lin Acta Chimica Sinica 2004, 62 (7), 680 Atomic force microscope was utilized to investigate the unstable growth of porous anodic aluminum oxide membrane The structures of the protrusions on the bottom of the barrier layer after the first anodized process and the holes on the surface of the membrane after the second anodized process were studied respectively By controlling the condition of the anodized process, the special membrane with branched channel structures can be formed Crystal Growth, Structure and Conductivity of the BEDT2TTF2based Charge2Transfer Salt ( BEDT2TTF) 2 C 3 H 5 SO 3 H 2 O LIU, Zhi ; YU, Wen2Tao ; J IANG, Min2Hua ; ZHANG, De2Qing ; ZHU, Dao2Ben Acta Chimica Sinica 2004, 62 (7), 686 Single crystals of the ( BEDT2TTF ) 2 C 3 H 5 SO 3 H 2 O salt were prepared by using electrocrystallization techniques and determined by four2circle X2ray diffraction method The resistivity2temperature curve demonstrates that this salt is a typical semiconductor with an activation of 0 319 ev Syntheses, Characterization and DNA2binding Studies of Novel Asymmetric Tridentate Polypyridine Ligands and Their Heteroleptic Ruthenium( II) Complexes J IANG, Cai2Wu Acta Chimica Sinica 2004, 62 (7), 692 Two novel tridentate ligands, 32(1,102phenanthrolin222yl) 21,2,42triazole ( PHT) and 32(1, 102phenanthrolin222yl) 252methyl21,2,42triazole ( PHMT), and their heteroleptic complexes [ Ru(tpy) (PHT) ] (ClO 4 ) 2 H 2 O (Ru1) and [ Ru(tpy) (PHMT) ] (ClO 4 ) 2 2H 2 O (Ru2) have been synthesized and characterized, DNA binding mechanisms of the complexes are investigated by electronic absorption spectra, competitive binding, and viscosity measurements