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Πολυδεύκης Ζαφειρόπουλος
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1 Preface... xi Chapter 1. Introduction to Semiconductor Photodetectors Franck OMNES 1.1. Brief overview of semiconductor materials Photodetection with semiconductors: basic phenomena Semiconductor devices p-n junctions and p-i-n structures Avalanche effect in p-i-n structures Schottky junction Metal-semiconductor-metal (MSM) structures Operational parameters of photodetectors Response coefficient, gain and quantum efficiency Temporal response and bandwidth Noise equivalent power Detectivity Chapter 2. PIN Photodiodes for the Visible and Near-Infrared Baudoin DE CREMOUX 2.1. Introduction Physical processes occurring in photodiodes Electrostatics in PIN diodes: depleted region Mechanisms of electron-hole pair generation Transport mechanisms Static characteristics of PIN photodiodes I/V characteristics and definition of static parameters External quantum efficiency... 27

2 vi Optoelectronic Sensors Dark current Breakdown voltage Saturation current Dynamic characteristics of PIN photodiodes Intrinsic limitations to the speed of response Limitations due to the circuit Power-frequency compromise, Pf 2 law Semiconductor materials used in PIN photodiodes for the visible and near-infrared Absorption of semiconductors in the range 400-1,800 nm From 400 to 900 nm: silicon and the GaAlAs/GaAs family From 900 to 1,800 nm: germanium, GaInAsP/InP New photodiode structures Beyond the limits of conventional PIN Photodiodes with collinear geometry Waveguide photodiodes Traveling-wave photodiodes Beyond PIN structures Bibliography Chapter 3. Avalanche Photodiodes Gérard RIPOCHE and Joseph HARARI 3.1. Introduction History The avalanche effect Ionization coefficients Multiplication factors Breakdown voltage Properties of avalanche photodiodes Current-voltage characteristics and photomultiplication Noise in avalanche photodiodes Signal-to-noise ratio in avalanche photodiodes Speed, response time and frequency response of avalanche photodiodes Technological considerations Guard ring junctions Mesa structures Crystal defects and microplasmas Silicon avalanche photodiodes Si N + P APDs Si N + PπP + APDs Si N + πpπp + APDs... 84

3 vii SiPt-Si N Schottky APDs Avalanche photodiodes based on gallium arsenide Germanium avalanche photodiodes Ge APDs with N + P, N + NP and P + N structures for 1.3 µm communication Ge APDs with P + NN - structures for 1.55 µm communication Avalanche photodiodes based on indium phosphate (InP) InGaAs/InP APDs for optical communications at 2.5 Gbit/s Fast InGaAs/InP APDs III-V low-noise avalanche photodiodes III-V super-lattice or MQW APDs Spin-orbit resonance APDs Prospects Si/InGaAs APDs Waveguide MQW APDs Low-noise APDs with a very thin multiplication region Conclusion Bibliography Chapter 4. Phototransistors Carmen GONZALEZ and Antoine MARTY 4.1. Introduction Phototransistors Phototransistors according to their fabrication materials Phototransistors classified by structure The bipolar phototransistor: description and principles of operation The phototransistor effect The response coefficient of a phototransistor Static electrical and optical gains of the phototransistor Dynamic characteristics of phototransistors Noise in phototransistors Photodetector circuits based on phototransistors Amplification circuits Nonlinear circuits Applications Galvanic isolation Phototransistors for optical telecommunications Conclusion Bibliography

4 viii Optoelectronic Sensors Chapter 5. Metal-Semiconductor-Metal Photodiodes Joseph HARARI and Vincent MAGNIN 5.1. Introduction Operation and structure Fundamentals Materials used Static and dynamic characteristics Response coefficient Dynamic behavior Noise Integration possibilities and conclusion Bibliography Chapter 6. Ultraviolet Photodetectors Franck OMNES and Eva MONROY 6.1. Introduction The UV-visible contrast Si and SiC photodetectors for UV photodetection UV photodiodes based on silicon SiC-based UV photodetectors UV detectors based on III-V nitrides Photoconductors Schottky barrier photodiodes based on AlGaN MSM photodiodes p-n and p-i-n photodiodes Phototransistors Conclusion Bibliography Chapter 7. Noise in Photodiodes and Photoreceiver Systems Robert ALABEDRA and Dominique RIGAUD 7.1. Mathematical tools for noise Known signals with finite energy or power Random signals and background noise Fundamental noise sources Thermal noise Shot noise Multiplication noise Excess noise Generation-recombination noise /f noise

5 ix 7.4. Analysis of noise electrical circuits Representation of noise in bipoles Representation of noise in quadripoles Noise in photodetectors Characteristic parameters PIN photodiodes Avalanche photodiodes Noise optimization of photodetectors Formulation of the problem Concepts for photodetector-transistor matching Calculation of the noise of a photoreceiver Basic equations Models of transistor noise Example calculation: a PIN-FET photoreceiver Comments and conclusions Bibliography List of Authors Index

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