DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS. March 1994
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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 File under Discrete Semiconductors, SC14 March 1994 Philips Semiconductors
2 FEATURES DESCRIPTION High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. Silicon PNP transistor in a plastic, SOT33 (S-mini) package. The uses the same crystal as the SOT3 version, BFT93. handbook, columns 3 APPLICATIONS It is intended as a general purpose transistor or wideband applications up to GHz. PINNING PIN DESCRIPTION 1 base emitter 3 collector 1 Top view MBC87 Marking code: X1. Fig.1 SOT33. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw h FE DC current gain I C = 3 ma; V CE = 5 V 5 C re eedback capacitance I C = ; V CE = 5 V; = 1 MHz 1 pf T transition requency I C = 3 ma; V CE = 5 V; 4 GHz = 5 MHz maximum unilateral power gain I C = 3 ma; V CE = 5 V; 15.5 db = 5 MHz; T amb =5 C F noise igure I C = 1 ma; V CE = 5 V;.4 db = 5 MHz T j junction temperature 15 C Note 1. T s is the temperature at the soldering point o the collector pin. March 1994
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw T stg storage temperature C T j junction temperature 15 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance rom junction to soldering point up to T s =93 C; note 1 19 K/W Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point o the collector pin. CHARACTERISTICS T j =5 C (unless otherwise speciied). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-o current I E = ; V CB = 5 V 5 na h FE DC current gain I C = 3 ma; V CE = 5 V 5 T transition requency I C = 3 ma; V CE = 5 V; 4 GHz = 5 MHz; T amb =5 C C c collector capacitance I E =i e = ; V CB = 5 V; 1. pf = 1 MHz C e emitter capacitance I C =i c = ; V EB =.5 V; 1.4 pf = 1 MHz C re eedback capacitance I C = ; V CE = 5 V; = 1 MHz 1 pf maximum unilateral power gain; note 1 I C = 3 ma; V CE = 5 V; = 5 MHz; T amb =5 C I C = 3 ma; V CE = 5 V; = 1 GHz; T amb =5 C F noise igure Γ s = Γ opt ; I C = 1 ma; V CE = 5 V; = 5 MHz Γ s = Γ opt ; I C = 1 ma; V CE = 5 V; = 1 GHz 15.5 db 1 db.4 db 3 db Note 1. is the maximum unilateral power gain, assuming s 1 is zero. = 1 s 1 log ( 1 s 11 ) ( 1 s ) db. March
4 4 MLB44 6 MLB45 Ptot (mw) 3 h FE T ( o s C) I C (ma) V CE = 5 V; T j =5 C. Fig. Power derating as a unction o the soldering point temperature. Fig.3 DC current gain as a unction o collector current, typical values. Cre (pf) 1.6 MLB46 6 T (GHz) V = CE 1 V MLB V V CB (V) 1 1 I C (ma) 1 I C = ; = 1 MHz. = 5 MHz; T amb =5 C. Fig.4 Feedback capacitance as a unction o collector-base voltage, typical values. Fig.5 Transition requency as a unction o collector current, typical values. March
5 3 MLB48 3 MLB49 gain gain MSG MSG I C (ma) I C (ma) V CE = 5 V; = 5 MHz. V CE = 5 V; = 1 GHz. Fig.6 Gain as a unction o collector current, typical values. Fig.7 Gain as a unction o collector current, typical values. 5 gain 4 MLB43 5 gain 4 MLB431 3 MSG 3 MSG 1 1 G max G max V CE = 5 V; I C = 1 ma. V CE = 5 V; I C = 3 ma. Fig.8 Gain as a unction o requency, typical values. Fig.9 Gain as a unction o requency, typical values. March
6 9 o o.5 45 o GHz o o. 4 MHz o.5 45 o 1 9 o MLB V CE = 1 V; I C = 3 ma. Fig.1 Common emitter input relection coeicient (s 11 ), typical values. 9 o 135 o 45 o 4 MHz 18 o GHz o 135 o 45 o 9 o MLB435 V CE = 1 V; I C = 3 ma. Fig.11 Common emitter orward transmission coeicient (s 1 ), typical values. March
7 9 o 135 o 45 o 3 GHz 18 o MHz o 135 o 45 o 9 o MLB436 V CE = 1 V; I C = 3 ma. Fig.1 Common emitter reverse transmission coeicient (s 1 ), typical values. 9 o o.5 45 o o o. 3 GHz 4 MHz o.5 45 o 1 MLB o V CE = 1 V; I C = 3 ma. Fig.13 Common emitter output relection coeicient (s ), typical values. March
8 6 MLB43 6 MLB433 F 4 1 GHz F 4 I = C 3 ma ma 5 MHz 1 ma 5 ma 1 1 I C (ma) V CE = 5 V. V CE = 5 V. Fig.14 Minimum noise igure as a unction o collector current, typical values. Fig.15 Minimum noise igure as a unction o requency, typical values. March
9 9 o o.5 45 o.8.6. F min =.4 db Γopt o F = 3 db o. F = 4 db 5 F = 5 db 135 o.5 45 o 1 9 o MLB V CE = 5 V; I C = 1 ma; = 5 MHz; Z o =5Ω. Fig.16 Common emitter noise igure circles, typical values. 9 o o.5 45 o.8.6. F min =.9 db o. Γopt o. F = 3.5 db. F = 4 db 5 F = 5 db 135 o.5 45 o 1 9 o MLB V CE = 5 V; I C = 1 ma; = 1 GHz; Z o =5Ω. Fig.17 Common emitter noise igure circles, typical values. March
10 SPICE parameters or the crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS aa BF NF 1. 4 VAF 19.1 V 5 IKF ma 6 ISE 9.94 A 7 NE BR NR m 1 VAR V 11 IKR 6.74 ma 1 ISC 3.4 A 13 NC RB 1. Ω 15 IRB 1. µa 16 RBM 1. Ω 17 RE. mω 18 RC 3.8 Ω 19 (1) XTB. (1) EG 1.11 EV 1 (1) XTI 3. CJE 1.57 pf 3 VJE 6. mv 4 MJE 38. m 5 TF ps 6 XTF.9 7 VTF.989 V 8 ITF ma 9 PTF. deg 3 CJC pf 31 VJC mv 3 MJC 81.3 m 33 XCJC 1. m 34 TR 3. ns 35 (1) CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 (1) VJS 75. mv 37 (1) MJS. 38 FC m Note 1. These parameters have not been extracted, the deault values are shown. handbook, halpage B L1 Cbe L B QL B = 5; QL E = 5; QL B,E ()=QL B,E (/Fc); Fc = scaling requency = 1 GHz. Fig.18 Package equivalent circuit SOT33. List o components (see Fig.18). B' Ccb MBC964 DESIGNATION VALUE UNIT C be F C cb 1 F C ce 1 F L1.34 nh L.1 nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C March
11 Table 1 Common emitter scattering parameters: V CE = 5 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table Noise data: V CE = 5 V; I C = 5 ma. F min (ratio) Γ opt (deg) R n March
12 Table 3 Common emitter scattering parameters: V CE = 5 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 4 Noise data: V CE = 5 V; I C = 1 ma. F min (ratio) Γ opt (deg) R n March
13 Table 5 Common emitter scattering parameters: V CE = 5 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 6 Noise data: V CE = 5 V; I C = ma. F min (ratio) Γ opt (deg) R n March
14 Table 7 Common emitter scattering parameters: V CE = 5 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 8 Noise data: V CE = 5 V; I C = 3 ma. F min (ratio) Γ opt (deg) R n March
15 Table 9 Common emitter scattering parameters: V CE = 1 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 1 Noise data: V CE = 1 V; I C = 5 ma. F min (ratio) Γ opt (deg) R n March
16 Table 11 Common emitter scattering parameters: V CE = 1 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 1 Noise data: V CE = 1 V; I C = 1 ma. F min (ratio) Γ opt (deg) R n March
17 Table 13 Common emitter scattering parameters: V CE = 1 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 14 Noise data: V CE = 1 V; I C = ma. F min (ratio) Γ opt (deg) R n March
18 Table 15 Common emitter scattering parameters: V CE = 1 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 16 Noise data: V CE = 1 V; I C = 3 ma. F min (ratio) Γ opt (deg) R n March
19 PACKAGE OUTLINE Plastic surace mounted package; 3 leads SOT33 D B E A X y H E v M A 3 Q A 1 A1 c e1 bp w M B Lp e detail X 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max 1.1 mm.1.8 b p c D E e e 1 H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT33 SC March
20 DEFINITIONS Data sheet status Objective speciication This data sheet contains target or goal speciications or product development. Preliminary speciication This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains inal product speciications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more o the limiting values may cause permanent damage to the device. These are stress ratings only and operation o the device at these or at any other conditions above those given in the Characteristics sections o the speciication is not implied. Exposure to limiting values or extended periods may aect device reliability. Application inormation Where application inormation is given, it is advisory and does not orm part o the speciication. LIFE SUPPORT APPLICATIONS These products are not designed or use in lie support appliances, devices, or systems where malunction o these products can reasonably be expected to result in personal injury. Philips customers using or selling these products or use in such applications do so at their own risk and agree to ully indemniy Philips or any damages resulting rom such improper use or sale. March 1994
21 NOTES March
22 NOTES March 1994
23 NOTES March
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