4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
|
|
|
- Γῆ Δράκος
- 5 χρόνια πριν
- Προβολές:
Transcript
1 4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P 9 MHz, Typ dm CW P MHz, Typ. 6% Pulsed Collector 9 MHz, Typ. 11 d Pulsed Power 9 MHz, Typ. -35 dc IMD P out of 17 dm per tone, 9 MHz, Typ. Applications Driver Amplifier for GSM and AMPS/ETACS/ 9 MHz NMT Cellular Phones 9 MHz ISM and Special Mobile Radio 85 mil Plastic Surface Mount Package Outline 86 Pin Configuration 4 EMITTER 1 ASE 2 EMITTER 3 COLLECTOR Description Hewlett Packard s AT-3886 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package. This device is designed for use as a pre-driver or driver device in applications for cellular and wireless communications markets. At 4.8 volts, the AT-3886 features +28 dm pulsed output power, Class A operation, and dm CW. Superior efficiency and gain makes the AT-3886 an excellent choice for battery powered systems. The AT-3886 is fabricated with Hewlett Packard s 1 GHz F t Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices E
2 AT-3886 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EO Emitter-ase Voltage V 1.4 V CO Collector-ase Voltage V 16. V CEO Collector-Emitter Voltage V 9.5 I C Collector Current [2] ma 25 I C Collector Current [3] ma 16 P T Peak Power Dissipation [2, 4] W 3.7 P T CW Power Dissipation [3, 5] mw 46 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%. 3. CW operation. 4. Derate at 57.1 mw/ C for T C > 85 C. T C is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 5. Derate at 7.1 mw/ C for T C > 85 C. T C is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 6. Using the liquid crystal technique, V CE =4.5 V, I c = 5 ma, T j =15 C, 1-2 µm hot-spot resolution. Thermal Resistance [6] : θ jc = 14 C/W Electrical Specifications, T C = 25 C Symbol Parameters and Test Conditions Units Min. Typ. Max. Freq. = 9 MHz, V CE = 4.8 V, I CQ = ma, Pulse width = 577 µsec, duty cycle = 12.5%, unless otherwise specified P out Output Power, Test Circuit A, P in = +17 dm dm Pulsed Operation [1] η C Collector Efficiency, Test Circuit A, P in = +17 dm % 5 6 Pulsed Operation [1] Mismatch Tolerance Test Circuit A, P out = +28 dm, 7:1 No Damage, Pulsed [1] any phase, 2 sec duration P out Output Power, F = MHz, I CQ = 15 ma dm CW Operation [2] Test Circuit, P in = +1 dm IMD 3 3rd Order Intermodulation Distortion, F1 = 899 MHz, F2 = 91 MHz dc Tone Test, P out each tone = +17 dm, CW [2,3] I CQ = 15 ma, Test Circuit Mismatch Tolerance, No Damage, F = MHz, I CQ = 15 ma 7:1 CW [2] Test Circuit, P out = dm any phase, 2 sec duration V EO Emitter-ase reakdown Voltage I E =.2 ma, open collector V 1.4 V CO Collector-ase reakdown Voltage I C = 1. ma, open emitter V 16. V CEO Collector-Emitter reakdown Voltage I C = 3. ma, open base V 9.5 h FE Forward Current Transfer Ratio V CE = 3 V, I C = 16 ma I CEO Collector Leakage Current V CEO = 5 V µa 15 Notes: 1. With external matching on input and output, tested in a 5 ohm environment. Refer to Test Circuit A (GSM). 2. With external matching on input and output, tested in a 5 ohm environment. Refer to Test Circuit (AMPS). 3. Test circuit re-tuned at 9 MHz. 4-9
3 AT-3886 Typical Performance, T C = 25 C Frequency = 9 MHz, V CE = 4.8 V, I CQ = ma, pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%, Test Circuit A (GSM), unless otherwise specified OUTPUT POWER (dm) Γ source = Γ load = Pout η c Figure 1. Output Power and Collector Efficiency vs. Input Power COLLECTOR EFFICIENCY (%) OUTPUT POWER (dm) Γ source = Γ load = V 4.8 V V Figure 2. Output Power vs. Input Power Over ias Voltage. COLLECTOR EFFICIENCY (%) Γ source = Γ load = V 4.8 V 1 6. V Figure 3. Collector Efficiency vs. Input Power Over ias Voltage. OUTPUT POWER (dm) Γ source = Γ load = T C = +85 C T C = +25 C T C = 4 C Figure 4. Output Power vs. Input Power Over Temperature. OUTPUT POWER (dm) Γ source = Γ load = Pout Pin = +17 dm η c FREQUENCY (MHz) Figure 5. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 9 MHz, then Swept over Frequency COLLECTOR EFFICIENCY (%) RETURN LOSS (d) Γ source = Γ load = Output R.L. Input R.L FREQUENCY (MHz) Figure 6. Input and Output Return Loss vs. Frequency. 4-91
4 AT-3886 Typical Performance, T C = 25 C Freq. = MHz, V CE = 4.8 V, I CQ = 15 ma, CW operation, Test Circuit (AMPS), unless otherwise specified OUTPUT POWER (dm) Γ source = Γ load = P out η c Figure 7. Output Power and Collector Efficiency vs. Input Power. COLLECTOR EFFICIENCY (%) OUTPUT POWER (dm) Γ source = Γ load = V V 6. V Figure 8. Output Power vs. Input Power Over ias Voltage. COLLECTOR EFFICIENCY (%) Γ source = Γ load = V 4.8 V 6. V Figure 9. Collector Efficiency vs. Input Power Over ias Voltage. OUTPUT POWER (dm) Γ source = Γ load = T C = +85 C T C = +25 C T C = 4 C Figure 1. Output Power vs. Input Power Over Temperature. RETURN LOSS (d) Γ source = Γ load = Output R.L. Input R.L FREQUENCY (MHz) Figure 11. Input and Output Return Loss vs. Frequency. IMD (dc) Γ source = Γ load = IMD3 IMD OUTPUT POWER/TONE (dm) Figure 12. IMD3, IMD5 vs. Output Power Per Tone. Note: Test circuit (AMPS) used and re-tuned at 9 MHz. 4-92
5 AT-3886 Typical Large Signal Impedances (GSM) Freq. = 9 MHz, V CE = 4.8 V, I CQ = ma, Pulsed Operation, P out = +28. dm Freq. Γ source Γ load MHz Mag. Ang. Mag. Ang AT-3886 Typical Large Signal Impedances (AMPS) Freq. = MHz, V CE = 4.8 V, I CQ = 15 ma, CW Operation, P out = dm Freq. Γ source Γ load MHz Mag. Ang. Mag. Ang Ccb (pf) Vcb (V) Figure 13. Collector-ase Capacitance vs. Collector-ase Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model CPad C Cbc CPad CPad Lb C L3 C Die Area =.67 CPad =.36 pf E1 E2 Cbe E1 Le E2 Cce Label F IKF ISE NE VAF NF TF XTF VTF ITF PTF XT R IKR ISC NC VAR Value E E E Label NR TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE R RE RC Value E E pf pf Label Cbe Cbc Cce L3 Lb Le Value.32 pf.36 pf.122 pf.46 nh.46 nh.46 nh.47 nh.14 nh E 4-93
6 AT-3886 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω V CE = 3.6 V, I c = 5 ma, T c = 25 C Freq. S 11 S 21 S 12 S 22 GHz Mag. Ang. d Mag. Ang. d Mag. Ang. Mag. Ang V CE = 4.8 V, I c = 5 ma, T c = 25 C V CE = 6. V, I c = 5 ma, T c = 25 C
7 Typical Performance GAIN (d) MSG S 21 2 MAG FREQUENCY (GHz) Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 3.6V, Ic = 5 ma. GAIN (d) MSG S 21 2 MAG FREQUENCY (GHz) Figure 15. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 4.8V, Ic = 5 ma. GAIN (d) MSG S 21 2 MAG FREQUENCY (GHz) Figure 16. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 6.V, Ic = 5 ma. Part Number Ordering Information Part Number No. of Devices Container AT-3886-TR1 1 7" Reel AT-3886-LK 1 Antistatic ag Package Dimensions Outline ±.13 (. ±.5) 4 45 C L ±.38 (.92 ±.15) ±.25 (.6 ±.1) 2.67 ±.38 (.15 ±.15) 5 TYP..3 ±.51 (.6 ±.2).66 ±.13 (.26 ±.5). MIN (.12 MIN) 2.16 ±.13 (.85 ±.5) 8 MAX MIN DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-95
8 Test Circuit A: Test Circuit oard 9 MHz for Pulsed Operation (GSM) V 38.1 (1.5) V T1 C1 INPUT C3 R2 R1 C2 PA1 DEMO R3 C4 R4 R5 C5 C6 MFG139 C8 C9 C7 9/96 C1 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 R3 R4 R5 T1 1. pf 1. pf 1. nf 8.2 pf 1. nf 1. pf 3.6 pf 1.5 µf 1. µf 1. pf 1. Ω 619. Ω 1. Ω 4. Ω 1. Ω MT 2222A 18. µh 18. µh Pulse Test V CE = 4.8 V I CQ = ma Freq. = 9 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit A: Test Circuit Schematic 9 MHz for Pulsed Operation (GSM) 1 Ω V 619 Ω Pulse Test V CE = 4.8 V I CQ = ma Freq. = 9 MHz C E DC Transistor 1 Ω 1 nf 1 Ω 18 µh 1 pf 1 pf 8 Ω 8 Ω 1 nf 1.5 µf 1 µf 18 µh 9 MHz 9 MHz RF IN 1 pf 5 Ω 4 Ω 5 Ω = 19. (.748) 3.6 pf 1 pf RF OUT 8.2 pf = 6.53 (.257) 4-96
9 Test Circuit : Test Circuit oard MHz for CW Operation (AMPS) V 38.1 (1.5) V T1 C1 INPUT C2 R2 R1 R3 C3 PA1 DEMO C4 R4 C5 R5 C6 MFG139 C7 C8 9/96 C9 C1 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 R3 R4 R5 T1 1. pf 1. nf 11. pf 1. pf 1. pf 1. nf 1.5 µf 1. µf 4.7 pf 1. pf 1. Ω 619. Ω 1. Ω 4. Ω 1. Ω MT 2222A 18. µh 18. µh CW Test V CE = 4.8 V I CQ = 15 ma Freq. = MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit : Test Circuit Schematic MHz for CW Operation (AMPS) 1 Ω V 619 Ω CW Test V CE = 4.8 V I CQ = 15 ma Freq. = MHz C E DC Transistor 1 Ω 1 nf 1 Ω 1 pf 1 pf 1 nf 1.5 µf 1 µf 18 µh 18 µh 8 Ω 8 Ω MHz MHz RF IN 1 pf 5 Ω 4 Ω 5 Ω = (1.286) 4.7 pf 1 pf RF OUT 11. pf = 9.2 (.355) 4-97
10 Tape Dimensions and Product Orientation for Outline 86 REEL 1 12 mm CARRIER TAPE NOTE: 1 INDICATES PIN 1 ORIENTATION USER FEED DIRECTION COVER TAPE t COVER TAPE D P P 2 1 PITCHES CUMULATIVE TOLERANCE ON TAPE ±.2 MM E K C A F W USER FEED DIRECTION T P 1 D 1 CAVITY PERFORATION DESCRIPTION SYMOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH OTTOM HOLE DIAMETER DIAMETER PITCH POSITION A K P 1 D 1 D P E 5.77 ± ± ±.1 8. ± min / ± ± ±.4.24 ±.4.67 ± ±.4.59 min / ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t 12. ±.. ± ±.8.12 ±.2 COVER TAPE WIDTH TAPE THICKNESS C T 9. ±.1.65 ± ±.4.26 ±.4 DISTANCE ETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P ±.5 2. ± ±.2.79 ±
4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625
4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features 4.8 Volt Operation +28. dbm P out @ 9 MHz, Typ. 7% Collector Efficiency @ 9 MHz, Typ. 9 db Power Gain @ 9 MHz, Typ.
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
AT Low Current, High Performance NPN Silicon Bipolar Transistor
AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are
NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
The following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE68 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR NE86 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 7 GHz LOW NOISE FIGURE:. db at GHz HIGH COLLECTOR CURRENT: 00 ma HIGH RELIABILITY METALLIZATION LOW COST B E
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x
High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter 03
High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
! " # $ &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 #! - (#* 2 3( 4* 2 (* 2 5!! 3 ( * (7 4* 2 #8 (# * 9 : (* 9
"# " # $ "%%" & '" (' )' * & + (' )' * &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 # - (#* 2 # - (#* 2 3( 4* 2 (* 2 5 3 ( * 2 6 3 (7 4* 2 #8 (# * 9 : (* 9 #" " 5,1 < = " = #+ +# 9 ' :> # &? + # & ISD i " @
Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 20-Second Durations
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
+85 C Snap-Mount Aluminum Electrolytic Capacitors. High Voltage Lead free Leads Rugged Design. -40 C to +85 C
+85 C Snap-Mount Capacitors FEATURES High ripple Current Ratings Large Case Size Selection Extended Life High Voltage Lead free Leads Rugged Design SPECIFICATIONS Tolerance ±20% at 120Hz, 20 C Operating
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
![C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]](/thumbs/90/101883046.jpg "C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]")
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Surface Mount Multilayer Chip Capacitors for Commodity Solutions
Surface Mount Multilayer Chip Capacitors for Commodity Solutions Below tables are test procedures and requirements unless specified in detail datasheet. 1) Visual and mechanical 2) Capacitance 3) Q/DF
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
Radio Frequency Technologies for Innovative Solutions
Radio Frequency Technologies for Innovative Solutions Selection Guide LDMOS IN PLASTIC HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Radio and Digital Cellular BTS Applications Freq. Pout
Bluetooth / WLAN / WiFi Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25/6.25 mm. Pulse Part Number W3008, W3008C
W8 Datasheet version.7. ceramic antenna. (/) Ground cleared under antenna, clearance area 4. x 4.5/6.5 mm. Pulse Part Number W8, W8C Features - Omni directional radiation - Low profile - Compact size W
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
Applications. 100GΩ or 1000MΩ μf whichever is less. Rated Voltage Rated Voltage Rated Voltage
Features Rated Voltage: 100 VAC, 4000VDC Chip Size:,,,,, 2220, 2225 Electrical Dielectric Code EIA IEC COG 1BCG Applications Modems LAN / WAN Interface Industrial Controls Power Supply Back-Lighting Inverter
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes
PD553L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features Excellent thermal stability Common source configuration P OUT =3W mith 17dB gain@5mhz/12.5v New leadless plastic package Esd protection
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC input
WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)
W3001 Datasheet version 1.0. Antenna. (04/08). Antenna Features - Omni directional radiation (Azimuthal plane) - Low profile - Compact size W x L x H (10 x 3. x 4 mm) - Low weight (600 mg) - Lead free
Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
![± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:](/thumbs/85/91419422.jpg "± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:")
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
± 20% ± 5% ± 10% RENCO ELECTRONICS, INC.
RL15 RL16, RL17, RL18 MINIINDUCTORS CONFORMALLY COATED MARKING The nominal inductance is marked by a color code as listed in the table below. Color Black Brown Red Orange Yellow Green Blue Purple Grey
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
Quartz Crystal Test Report
Quartz Crystal Test Report Abracon Part no. : Data Type: Page 2-3 Page 4-5 Page 6-7 Page 8-9 Page 10-11 ABM8-Series Crystal parameters & Spice Model ABM8-16.000MHz-10-1-U ABM8-13.000MHz-10-1-U ABM8-40.000MHz-10-1-U
Thin Film Chip Inductor
Scope -Calchip s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Calchip s design provides high, excellent Q, and superior temperature stability. This highly
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
SD57045 RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION
NTC thermistors for temperature measurement
NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: Date: June 2008 EPCOS AG 2008. Reproduction, publication and dissemination of
Data Sheet. HSMW-Cxxx White ChipLEDs HSMW-C191, HSMW-130, HSMW-265, HSMW-197, HSMW-120. Description. Features. Applications
HSMW-Cxxx White ChipLEDs Data Sheet HSMW-C191, HSMW-13, HSMW-265, HSMW-197, HSMW-12 Description These white ChipLEDs come in unique shades of white and provide product differentiation for backlighting
! "!##! $ %! & '% * &! & > ::: <? > 1"+ > &/< >! > ISD
!"#! "!##! $! & ' ( ) $ * & ' ( ) $ + + ') $, ' ) $,- '). /"/ &&! 0 ' ). 1"+ '). ' ). " ' ). # * '* ).! ' 0).! ' ) 3 4 - '5 6) 3 - & '7/) 3 4 '05 ) 3 && & '4 4) 8 8 9 : ; &&!! 9 ; -& 9 $;0& 9. ; &&!! 9
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Low Value Multilayer Inductors (LMCI Series)
Structure Features: RoHS Compliant and Halogen Free Closed magnetic circuit configuration avoids crosstalk and is suitable for high density PCBs Size range: 0201, 05, 1608 Perfect shape for automatic mounting
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC