MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage smaller Voltage tolerances and other zener voltages are Available upon request. High Reliability MINI-MELF glass case(sod-8) Weight: Approx..g MINI MELF.(.6).(.).6(.6).(.).9(.8).(.8) Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGE: (Ta= ) Parameter Symbols Limits Unit Power Dissipation at Tamb= Ptot () mw Maximum Junction Temperature Tj Storage Temperature Range Tstg -~+ Symbols Min Typ Max Unit Thermal Resistance Junction to Ambient Air RthJA - - () /W Forward Voltage at IF=mA VF - -. Volts Notes. Valid provided that electrodes are kept at ambient temperature.. Tested with pulse tp=ms.. At Iz =.ma. At Iz =.ma.
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () at MAX MIN MA VR(V MAX MZO.GNV- V-. Izt(mA) X A) 8. MZO.GNV- V-.. 9 MZO.GNV- V-.. 89 MZO.GNV- V-. -.8 -.6. 6 MZO.GNV- V-. 9 6 -.8 -.6 MZO.GNV- V-. 8 6 -.8 -. 8 MZO.GNV6- V6-.6 -.8 -. 6 MZO.GNV9- V9-.9 9 -. -. MZO.GNV- V-. -. -. 6 MZO.GNV- V-. 9 9 -. -. 9 MZO.GNV- V-. 6 -. -. 89 MZO.GNV6- V6-.6 6 -. -.6 8 MZO.GN6V- 6V- 6. 6 -. -.. 6 MZO.GN6V- 6V- 6. - -. MZO.GN6V8-6V8-6.8 +...+.8 6 MZO.GNV- V-. 6 +. +.9 6 6 MZO.GN8V- 8V- 8. 8 +. +.9 6. MZO.GN8V- 8V- 8. 8 6 +. +. 6. MZO.GN9V- 9V- 9. 6 +. +. MZO.GNV- V- 6 +. +. 8 MZO.GNV- V- 6 +. +. 8. MZO.GNV- V- 6 +. +. 9. 8 MZO.GNV-9. V-9. 9. 6 +. +.. 9.9 MZO.GNV-9. V-9. 9 6 +. +.. MZO.GNV-8. V-8. 8. 6 6 +. +.. MZO.GN6V-.8 6V-.8 6.8 6 +. +.. 8 MZO.GNV-. V-.. 9 6 +. +.. MZO.GN8V-. 8V-.. 8 6 +. +.. MZO.GN9V-6.6 9V-6.6 9 6.6 6 +. +.. MZO.GNV-6. V-6. 6. 6 +. +.. MZO.GNV-.6 V-.6.6 9 6 +. +.. MZO.GNV-. V-.. 6 +. +.. 8 9. MZO.GNV-. V-. 6 +. +.. 9 8. MZO.GNV-.6 V-.6.6 6 +. +.. 6.8 MZO.GN8V-. 8V-. 8. 6 +. +.. 6. MZO.GNV-. V-.. 9 6 +. +... MZO.GNV-.8 V-.8.8 8 +. +...8 MZO.GN6V-. 6V-. 6. +. +...6 MZO.GN9V-. 9V-. 9. 8 8 +. +...6 MZO.GNV- V- 9 9 +. +...6 MZO.GNV-. V-.. +. +.. 6 9. MZO.GNV-. V-.. +. +.. 9 8.9 MZO.GN6V-. 6V-. 6. +. +.. - MZO.GN6V-. 6V-. 6. +. +.. 6 - MZO.GN6V-. 6V-. 6 8 +. +.. - MZO.GN68V-.8 68V-.8 68.8 6 +. +.. - MZO.GNV-. V-.. +. +.. 6 - IZT(Ma)
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV ELECTRICAL CHARACTERISTIC Ratings at ambient temperature unless otherwise specified Valtage () Dynamic Resistance Type Device Marking Code Vz(v) ( Vz<=±% ) () f=khz ZZT(Ω) At IZT f=khz IZK=.Ma ZZK(Ω) Temp coeff of Volotage αvz(%/k) Reverse leakage current IR(Μa) Admissible Current () MAX MIN M VR(V MAX MZ.GNV V. A A). MZ.GNV V.. MZ.GNV V. 8. MZ.GNV V. 9 -.8 -.6. MZ.GNV V. 9 -.8 -.6 MZ.GNV V. 9 -.8 -. MZ.GNV6 V6.6 9 -.8 -. MZ.GNV9 V9.9 9 -. -. 9 MZ.GNV V. 88 -. -. 9 MZ.GNV V. -. -.. 8 MZ.GNV V. -.. 8 MZ.GNV6 V6.6 8 -. -.6 MZ.GN6V 6V 6.. 6 MZ.GN6V8 6V8 6.8 8 +. +.8. 8 MZ.GNV V. 6 +. +.9. 6 MZ.GN8V 8V 8. 6 +. +..9. 6. MZ.GN9V 9V 9. 6 +. +.. MZ.GNV V 6 +. +.. 8 MZ.GNV V 8 6 +. +.. 8. 6 MZ.GNV V 6 +. +.. 9. MZ.GNV V 6 +. +.. 9.9 9 MZ.GNV V 6 +. +.. MZ.GN6V 6V 6 6 6 +. +.. MZ.GN8V 8V 8 6 +. +.. MZ.GNV V 8 6 +. +.. MZ.GNV V 6 +. +.. 8 MZ.GNV V 6 6 +. +.. 8 6 MZ.GNV V 6 +. +.. MZ.GNV V 8 6 +. +.. MZ.GNV V 88 +. +.. MZ.GN6V 6V 6 9 +. +.. MZ.GN9V 9V 9 8 +. +.. MZ.GNV V 9 +. +...6 MZ.GNV V +. +.. 6 9. MZ.GNV V +. +.. 9 8.9 MZ.GN6V 6V 6 6( ) (6) +. +. (). MZ.GN6V 6V 6 8 () (6) +. +. (). 6 MZ.GN6V 6V 6 () (6) +. +. (). MZ.GN68V 68V 68 () 6 (6) +. +. (). MZ.GNV V 8 () (6) +. +. (). 6 IZT(Ma)
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV Breakdown characteristics Tj=constant(pulsed) ma Tj= V V9 V6 6V8 V V /Z 8V Test Current/z ma 6 8 9 V Vz ma V V Tj= V /Z 8V V V Test Current/z ma V V Vz
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV mw Admissible power dissipation versus ambient temperature Valid provided that leads are kept ambient temperature at a distance of 8mm from case pf Capacitance voltage TJ= Ptot Ctot V R =V V R=V V R =V V R=V K/W rtha Tamb Pulse thermal resistance versus pulse duration Valid provided that leads are kept ambient temperature at a distance of 8mm from case -...... V= - - tp - tp V = T T - P s Z ZK Ω. Dynamic resistance versus current V Z AT I Z =ma TJ= Vz=. V.6...6 ma tp I Z
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV Z ZK Ω Dynamic resistance versus current Vz= V TJ= r zth K/W Thermal differential resistance versus voltage Valid provided that leads are kept at ambient temperature at a distance of 8mm from case r Vz zth=rtha. Vz T j 8. I Z 6.8/8.. 6. ma negative positive V V Z at I Z = ma Ω Dynamic resistance versus current K/W Thermal resistance versus lead length Z ZK R tha Max. Typ. T J = IZ=mA V mm VZ at I Z=mA lead length /
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV mv/k Temperature dependance of voltage versus voltage V.6 Change of voltage from turn-on up to the point of thermal equilibrium versus voltage. Vz=rzth. Iz Iz=mA Vz T j Iz= ma ma ma Vz..8.6.. -. - V.8. Vz at Iz=mA Change of voltage versus junction temperature Vz at Iz=mA V -. Vz at Iz= ma V.6 Vz.... 8 6..9..6. -..6. -. 6 8 T j