Chapter 3 Exercise Solutios EX3. TN, 3, S 4.5 S 4.5 > S ( sat TN 3 Trasistor biased i the saturatio regio TN 0.8 3 0. / K K K ma (a, S 4.5 Saturatio regio: 0. 0. ma (b 3, S Nosaturatio regio: ( 0. ( 3 ( ( 0.6 ma EX3. TP, 3 S ( sat + TP 3 (a S 0.5 Nosaturatio (b S Saturatio (c 5 Saturatio S EX3.3 60 ( ( 0 3.636 + 60 + 80 0.5( 3.636 0.669 ma S 0 ( 0.669( 0 3.3 P 0.669 3.3. mw G S EX3.4 Q KP ( + TP. 0.4(..93 TTN + Note K kω.93 ( 00( 0 68 K 68 00 83 K 68 + 0 4 5 K. EX3.5 40 (a G ( 0 5 ( 0 5 + 40 + 60 S ( 5 ( K TN S S G
( ( 0.5( ( + 0.5 3.5 0 7.646 0.5.646.354 ma S 0.354 3 5.937 (b 4 (( K TN ( K (.05( 0.5 0.55 ( K ( 0.95( 0.5 0.475 (3 TN (.05(.05 (4 ( 0.95( 0.95 TN (-(3 4 0.55(. +.05 0.05 ± 0.00506 + 7.84.65 0.55 0.55 0.05 3.4 0 0.55.65.05.348 ma S 0.348 3 5.957 (-(4 4 0.475(.9 + 0.905 0.475 + 0.0975 3.573 0 0.0975 ± 0.0095065 + 6.78547 0.475.64 0.475(.64 0.95.359 ma S 0 (.359( 3 5.94 (-(4 4 ( 0. 55(. 9 + 0. 905 0. 55 + 0. 005 3. 56 0 0. 005 ± 0. 0000065 + 7. 4050 055 (.. 5893 ( 0. 55(. 5893 0. 95. 4 S 0 ( 3 5. 7678 (-(3 4 0.475. +.05 0.475 + 0.005 3.4763 0 0.005 ± 0.0000065 + 6.60499 (0.475.707 S 0 (3 6.08.97 Q.4 ma 5.768 6.08 EX3.6 (0.475(.707.05.973 ma S
G ( 0 5 + 00 ( 0 5 0. 74 350. S S So S G (. 074. 486. (. 486.. K + p TP 486.. 05. + 486. 03. 06. + 03. 03. + 04. 3986. 0 03 (. 04. ± 04. + 4 03. 3986. Must use + sig 3. 04 ( 05( 304 04 ma, Yes... S 0 S + 0. 04. + 4 S 4. 59 > sat S S EX3.7 S 0 Q ( S + P 0 K + + Set S + TP S P TP S P + 0 0.5 + 5. TP TP ( TP ( TP ± + 4(.3( 0 ( + TP.3.3 + + + 0 0.45 3.45 3.4 S.45 (.4 0.5.45.46 ma EX3.8 40 G ( 0 5 ( 0 5 + 40 + 70 0.94 G S 5 G + 5 K TN S S 0.08 4.706 4 3.9.4 +.44 0.64 0.4976 3.80744 0
0.4976 ± 0.476 + 9.50337 0.64.90 0.08 ( 4(.90. 0.463 ma 0 3.9 + 0 3.57 S S EX3.9 0 ad K + p TP S ( 0. 0.050 0.8.35 0.35 S S 63.75 kω 0. 8 0 + S S 8 0 0. 63.75 0. 0 0. 63.75 8 36.5 kω 0. ( K 0.05.05 0.055 P ( K 0.05 0.95 0.0475 P (3 0.8.05 0.84 TP (4 0.8 0.95 0.76 TP 0 KP + TP S (-(3 0 ( 63.75( 0.055.68 + 0.7056 3.347 4.63 7.6384 0 4.63 ±.37 + 0.63 3.347.35 0.0 ma 3.08 3.603 8.5 0 S 8.0 (-(4 0 ( 63.75( 0.0475.5 + 0.5776 3.603 ±.986 + 99.936 3.08.35 0.0 S 8.0 (-(4 0 ( 63.75( 0.055.5 + 0.5776 3.347 4.087 8.06685 0
4.087 ± 6.7036 + 07.999 3.347.79 0. ma S 7.89 (-(3 0 ( 63.75( 0.0475.68 + 0.7056 3.08 4.0873 7.8634 0 4.0873 ± 6.706 + 95.4 3.08.4 0.9 ma S 8. Summary 09. 0. ma 789. 8. EX3.0, K( TN S 0. + 0 8 + 8 7 0 S TN TN 7± 7 + 4 Use + sig: S 3.77 0 3.77 0.63 ma 0 Power 0.63 3.77 Power.35 mw S EX3. (a 4, river i No Sat. K ( TN O O KL [ O TNL ] 5 ( 4 ( ( 4 6 8 + 6 38O + 6 0 38 ± 444 384 6 0.454 (b O O O river: Sat [ TN ] L [ O TNL ] [ ] [ ] 5 5 K K 5 4.76 O O O EX3. f the trasistor is biased i the saturatio regio
K K TN TN 0.5.5.56 ma 0.56 4 3.75 S S S > S TN TN 3.75 >.5 Yes biased i the saturatio regio Power.56 3.75 Power 5.85 mw S EX3.3 (a For 5, Load i saturatio ad driver i osaturatio. L ( ( K TN O O KL TNL K K ( 5 ( 0.5 ( 0.5 4.06 K L KL (b 0. L KL TNL KL K 50 μa / ad K 03 μa / L EX3.4 For M N N P ( ( + K K N TN p scop TP + 5 3.5.75 N sat.75 0.75 o SN o For M :.75 P sat + 5 3.5 0.75 O S P TP So 5 0.75 4.5 ot EX3.5 For 0 kω, 5, ad o 0.4 ma 0 K ( TN S S K K ma P 0.4 P 0.4 mw 0.4 5 0.057 / S EX3.6 a. 5, 0, M cutoff 0 5 K ( TN O O 0.05 30 5 5 ot 0 O
.5 3 + 5 0 (.5 3 ± 3 4.5 5 0.40 0.40 0.53 ma 30 b. 5 5 O { K ( TN O O } ( 3 5 0 0.05 30 5 0 0 3 5 + 5 0 5 ± 5 4 3 5 0.05 5 0.05 0.60 ma 30 0.080 ma EX3.7 M & M watched 0.4 ma 3 Q EF ( 3 3 0.4 0.3.5 0.4 0.6.8 EX3.8 0.04 0. 5 C 0.6.77 C 0.04 W 0..77 0.6 L W 30 L B B 0.04 0. 5 A 0.6.3 EX3.9 A B ( (a K ( K ( ( ( 3 EF 3 3 TN 4 4 TN 3 3 4 K 4 K4 K K 4 3 3 (b K ( Q TN But 3 (c EX3.0 0. K K 0. ma/ 3 3 0. K K 0. ma/ 4 4 0. K 3 K 0.05 ma/
5 S 5 0 S 6.7 K 0.3 K TN 0.3 0...45 +.45 G S.45 5.8 K 0. S G SQ.45 5.575.575 ( 5 S S 4.3 K 0. K ( TN 0. 0.5(..647 G + S.647 + (.575 G 0.98 G ( 0 5 TN ( 0 5 + 0.98 ( 00( 0 5 49 K 49 00 337 K 49+ EX3. S S 5 (0.5(6 5 Q K ( TN 0.5 0.5( 0.8.507 G + S.507 0.507 3 3 G (5 0.507 (5 3 50.7 K + + 3 500 S S+ S +.5.5 G S +.5 +.507 3.007 + 3 + 3 G (5 3.007 (5 + + 3 500 + 3 300.7 300.7 50.7 50 K 500 50 50.7 99.3 K S + S.5 +.5 4 4 4 K 0.5 EX3. sat. 4.5 sat 3.3 S P S (. ( 4.5 SS 6.45 ma P EX3.3 Assume the trasistor is biased i the saturatio regio.
SS ( 3.5 8 8.7 S.7 5 8 0.8 8.6 S 8.6.7 7.43 P 7.43 >.7 3.5.33 S P Yes, the trasistor is biased i the saturatio regio. EX3.4.5 ma SS ( 0.5 6.4 5.5 0.5 5 S S S 4.375 S P ( 4 6 6 4.375.65 5 65.35 kω.5 + + 00 kω +.4 4.375 5.795 G S G ( 0 0 + 5.795 ( 0 0 4.05 kω 4 kω 00 57.95 kω 58 kω EX3.5 0 S S. SS 0.375 4 + 6 0 P 6 6 + 4 6 impossible S 4 ± 6 4 0.375 6 0.375 8.86 or.806.806 ma S S
5.8 0.4 5 4.78 S S 0.8 4.76 S.47 S ( sat P 4.8.9 So > sat S EX3.6 S 00 k i Ω + Q 5 ma, S QS 5. 6 SQ S SQ 6 8 8 ( 0 0.4 kω 5 Q SS 5 8 P 4 0.838 G + S 0.838 6 5.6 G ( 0 + 5.6 ( 00( 0 387 kω 00 ( 387 00( 387 + 00 + 387 00 00 387 35 kω TYU3. (a TN., sat. 0.8 S TN (i S 0.4 Nosaturatio (ii S Saturatio (iii S 5 Saturatio (b TN., sat. 3. S TN (i S 0.4 Nosaturatio (ii S Nosaturatio (iii S 5 Saturatio TYU3. (a K C ox WμC L ox 4 ( 3.9( 8.85 0 ox 8 t 450 0 ox 8 ( 00( 500( 7.67 0 F cm 8 7.67 0 / K K 0.74 ma/ 7 (b TN.,
(i (ii (iii (i (ii (iii S 0.4 Nosaturatio 0.74. 0.4 0.4 0.3 ma Saturatio S 0.74. 0.75 ma S 5 Saturatio 0.74. 0.75 ma., TN S 0.4 Nosaturatio 0.74 +. 0.4 0.4 0.658 ma Nosaturatio S ( ( 0.74 +..48 ma 5 Saturatio S 0.74 +..8 ma TYU3.3 (a S (sat + TP. 08. (i No Sat (ii Sat (iii Sat (b S (sat +. 3. (i No Sat (ii No Sat (iii Sat TYU3.4 (a 4 W μpc ox (3.9(8.85 0 KP Cox 8 L Z 350 0 8 9.86 0 8 (40 ( 300( 9.86 0 KP ( KP 0.96 ma/ (b (i (0.96 (.(0.4 (0.4 0.4 ma (ii (0 96 [ ].. 0. 89 ma (iii 0.89 ma (i (096 ( ( 04 ( 04. +... 070. ma (ii (0 96 ( ( (. +..60 ma (iii ( 0. 96( +. TYU3.5 3. 03 ma
(a λ 0, sat.5 0.8.7 S For, 0 Saturatio egio S S 0..5 0.8 0.89 ma (b λ 0.0 For ( λ K + TN S S ( 0..5 0.8 + 0.0 0.300 ma 0 S 0..5 0.8 + 0. 0.347 ma (c For part (a, λ 0 r o For part (b, λ 0.0, o λ ( TN ( 0.0( 0.(.5 0.8 r K TYU3.6 TN TNO + γ φf SB φ + f φ 0.70, f TNO (a 0, SB TN (b or r 73 kω SB, TN + 0.35 0.7 0.7 + TN.6 SB 4, TN + 0.35 0.7 4 0.7 + TN.47 (c TYU3.7 ( K TN 0.4 0.5 0.8.06 +.06 ( 7.5 68.8 k 50 Ω 8. kω 4 S 7.5 4 8.75 kω 0.4 > ( sat, Yes S S TYU3.8 o
S 5 ad S S 5 So S 0. K( TN 0. ( 0.080(..3.3 So S S 6.8 kω 0. S S S + S 4.5.3.8 5.8 8. kω 0. > sat, Yes S S TYU3.9 For S.. 0.56 ma 5 K( TN 0.56 K (. W μc K 0.389 ma/ L W ( 389 W 9.4 L 40 L TYU3.0 (a The trasitio poit is + + K / K t + K / K (.. ox TNL TN L + + 5/ + 0. 05/ 0. 0 7. 36 t 36. 336. 4. 4. L Ot t TN Ot (b We may write TN K 0.05.36 76.4 μ A TYU3. t ( K KL ( + + K / K + K / K TNL TN L L + + /.5 + K/ KL.5.5 +.5 K/ KL 5 + K/ KL K/ KL.67 K/ KL.78.5 b. For 5, driver i osaturated regio.
L K K K K L.78 ( 5 [ 5 ].4.78 4 ( ( TN O O L L TNL ( [ ] TN O O O TNL 0 0 0 ( 0 6 80 + 0 0 0 + 3.78 30.4 6 0 30.4 ± 30.4 4 3.78 6 0.57 ( 3.78 TYU3. We have S. < TN TN.8 Trasistor is biased i the osaturatio regio. S. K TN S S ad 0.475 ma S 8 0.475 K ( 0 (.8 (. (. 0.475 K(.88 K 0.65 ma/ W μcox K L W ( 65 W 9.43 L 35 L TYU3.3 (a Trasitio poit for the load trasistor river is i the saturatio regio. L K ( TN KL ( L TNL SL ( sat L TNL TNL SL Ot The Ot 5 3, Ot 3 K ( t ( TNL KL 0.08 ( t t.89 0.0 (b For the driver: Ot t TN.89, 0.89 t Ot TYU3.4 K ( TN S S ( 0.050 ( 0 0.7( 0.35 ( 0.35 0.39 ma o 0 0.35 30.3 kω 0.39 TYU3.5 (a Trasistor biased i the osaturatio regio
.S K ( TN S S 4 5 0.8 S S 4 S 33.6 S + 0 S 0.374 5.5 0.374 The 6 Ω TYU3.6 5 O a. K ( TN O O 0.0 K ( 5 ( 0.0 ( 0.0 K 0.48 ma/ 5 5 0 0.48 5 5 0.4 80 0.4 00. + 5 0 b. TYU3.7 (.4 00. ± 00. 4.4 5 0.050 5 ( 0.005( 00 4.5 Q TN K 5 50 0.5 0.466 0.005 0 0.050 + 0.466 + 0.050 0.56 S GG S GG 4.5 0.050 4.45 S S S TYU3.8 K ( TN S S 00 0.7 0. 0. 0. 9 μa.5 0. 67 kω 0.009