(1/1) SMD RoHS AVR AVR-M AVRL Variable resistor 2Zener diode Current(A) Positive direction 1 1 1 2 1 3 1 4 1 5 Zener diode /Vz:6.8V Chip varistor /V1mA:12V 2 Zener Diodes A capacitance content 18 14 1 6 2 2 6 1 14 18 1 5 1 4 1 3 Negative direction 1 2 1 1 Voltage(V) ESD, Surge voltage ESD, Surge voltage Power line Signal line IC Power line Signal line IC Insert a varistor between a line and ground RoHS EU Directive 22/95/EC PBB PBDE
(2/1) - 8 39V 3.3pF 6315 168 212 141 / + AVR-M15/168/212 AVR-M14A2/63/AVRL 4 to +125 C 4 to +85 C 4 to +125 C 4 to +85 C Inner electrode Varistor body (Palladium) (Zinc Oxide: ZnO semiconductor ceramics) Sn plating Ag termination underlayer Ni plating 63 type 15 type 168 type 212 type 141 type 6.5 5 1 15 2 25 3 Circuit voltage(v) 15 16 19 28 PDA PC DVD-ROM CD-ROM CD/MD/MP3 LCD CAN-BUS ECU Sn-Pb 24 C max. 2 C Preheating: 1s max. 16 to 18 C Time(s) 3s ma x. 26 C max. 23 C 15 to 18 C Preheating: 12s max. 4s ma x. Time(s)
(3/1) AVR-M AVR-M 15 C 27 M T AAB (1) (2) (3) (4) (5) (6) (7) (1) (2) L W 63.6.3mm 15 1..5mm 168 1.6.8mm 212 2. 1.2mm 14A2 1.4 1.mm 2 (3) (4) 27 27 1 V 63/15/168/212 W T B L mm L W T B min. (mg)typ. 63.6±.3.3±.3.3±.3.1.2 15 1.±.5.5±.5.5±.5.1 1.2 168 1.6±.1.8±.1.8±.1.2 5 212 2.±.2 1.25±.2 1.±.2.2 15 (5) K ±1% M ±2% (6) T B (7) TDK b a a b c 63.25 to.35.2 to.3.25 to.35 15.3 to.5.35 to.45.4 to.6 168.6 to.8.6 to.8.6 to.8 212.9 to 1.2.7 to.9.9 to 1.2 141 1.37±.2 b c mm.6max..2typ. 1.±.2.36±.2.64typ..32±.2 Weight: 4mg typ. Dimensions in mm 1. to 1.4.65 to.95.35 to.45.6 to.66.3 to.4 Dimensions in mm
(4/1) V1mA(V)[DC1mA] Vdc(V) T: B: Vcl(V) [8/2µs] E(Joule) [1/1µs] Ip(A) [8/2µs] C(pF) [1kHz, 1Vrms ] / 63 AVR-M63C12M AAB 12 9.6 to 14.4 7.5 max. 23[1A].1 max. 1 max. 33 typ. 15, 15 AVR-M15C8M AAB 8 6.4 to 9.6 5.5 max. 14[1A].4 max. 25 max. 65 typ. AVR-M15C8M ADB 8 6.4 to 9.6 5.5 max. 14[1A].1 max. 2 max. 48 typ. AVR-M15C8M ABB 8 6.4 to 9.6 5.5 max. 15[1A].2 max. 3 max. 1 typ. AVR-M15C8M ACB 8 6.4 to 9.6 5.5 max. 19[1A].1 max. 1 max. 33 typ. 1, AVR-M15C12M AAB 12 9.6 to 14.4 7.5 max. 2[1A].5 max. 1 max. 13 typ. AVR-M15C27M AAB 27 21.6 to 32.4 15 max. 5[1A].6 max. 4 max. 4 typ. AVR-M15C27M ABB 27 21.6 to 32.4 15 max. 5[1A].5 max. 1 max. 15 typ. 168 AVR-M168C8M AAB 8 6.4 to 9.6 5.5 max. 15[2A].9 max. 3 max. 65 typ. AVR-M168C12M 6AB 12 9.6 to 14.4 7.5 max. 2[2A].9 max. 5 max. 15 typ. AVR-M168C12M 2AB 12 9.6 to 14.4 7.5 max. 2[2A].6 max. 15 max. 4 typ. AVR-M168C18M 6AB 18 14.4 to 21.6 11 max. 3[2A].1 max. 3 max. 6 typ. AVR-M168C22K 6AB 22 19.8 to 24.2 16 max. 34[2A].1 max. 3 max. 56 typ. AVR-M168C22K 2AB 22 19.8 to 24.2 16 max. 37[2A].3 max. 1 max. 21 typ. 4, AVR-M168C27K 6AB 27 24 to 3 19 max. 42[2A].1 max. 48 max. 43 typ. AVR-M168C27K 2AB 27 24 to 3 19 max. 42[2A].1 max. 2 max. 16 typ. AVR-M168C27K ACB 27 24 to 3 19 max. 54[2A].5 max. 1 max. 6 typ. AVR-M168C27M AAB 27 21.6 to 32.4 17 max. 52[2A].5 max. 2 max. 3 typ. AVR-M168C27M ABB 27 21.6 to 32.4 17 max. 52[2A].5 max. 2 max. 15 typ. 212 AVR-M212C12M 6AB 12 9.6 to 14.4 7.5 max. 2[5A].2 max. 6 max. 1 typ. AVR-M212C22K 6AB 22 19.8 to 24.2 16 max. 38[5A].3 max. 1 max. 8 typ. 2, AVR-M212C39K 6AB 39 35 to 43 28 max. 62[5A].3 max. 1 max. 43 typ. 141 AVR-M14A2C24M 6 24 2 to 27 16 max. 5[1A].1 max. 5 max. 6 typ.[1mhz] AVR-M14A2C27M 47 27 21.6 to 32.4 15 max. 54[1A].7 max. 5 max. 47 typ.[1mhz] 4, AVRM14A2C27M 3R3F 27 21.6 to 32.4 1 max. 45[.2A].2 max..2 max. 3.3 typ.[1mhz] V1mA DC1mA (V) DC Vdc (V) 5µA max. Vcl (V) E (Joule) Ip (A) C (pf) 8/2µs 1 1/1µs 2 1 8/2µs 1 1 1kHz1MHz 1Vrms 1 8/2µs Current 1% 9% 5% 2 1/1µs 1% 9% 8µs 2µs Time Energy 5% 1µs 1µs Time
(5/1) AVRL AVRL 1 1A 3R3 F T A (1) (2) (3) (4) (5) (6) (7) L (1) W (2) L W 1 1..5mm 16 1.6.8mm T B (3) 1A 1Vdc (4) 1R1 1.1pF 3R3 3.3pF 6R8 6.8pF mm L W T B min. (mg)typ. 15 1.±.5.5±.5.5±.5.1 1.2 168 1.6±.1.8±.1.8±.1.2 5 c (5) N F G ±.3pF ±1pF ±2pF b a b mm a b c 15.3 to.5.35 to.45.4 to.6 168.6 to.8.6 to.8.6 to.8 (6) T B (7) TDK C(pF) [1MHz, 1Vrms] Vdc(V) T: B: Rdc(MΩ) [DC3V] 15 AVRL11A1R1N A 1.1[.8 to 1.4] 1 max. 1 min. 9 typ. AVRL11A1R1N B 1.1[.8 to 1.4] 1 max. 1 min. 39 typ. AVRL11A3R3F A 3.3[2.3 to 4.3] 1 max. 1 min. 27 typ. AVRL11A6R8G A 6.8[4.8 to 8.8] 1 max. 1 min. 27 typ. 168 AVRL161A1R1N A 1.1[.8 to 1.4] 1 max. 1 min. 9 typ. AVRL161A1R1N B 1.1[.8 to 1.4] 1 max. 1 min. 39 typ. AVRL161A3R3F A 3.3[2.3 to 4.3] 1 max. 1 min. 27 typ. AVRL161A6R8G A 6.8[4.8 to 8.8] 1 max. 1 min. 27 typ. V1mA(V)[DC1mA] / 1, 4, C 1MHz (pf) 1Vrms Vdc DC (V) 5µA max. Rdc (MΩ) V1mA (V) DC1mA
(6/1) 1 1 1 V1mA:12V 1 15pF 6.8pF 3.3pF 3pF 1 1 2 V1mA:8V 1 Current(A) 1 3 1 4 1 5 1 6 V1mA:27V V1mA:22V V1mA:18V Impeadance(Ω) 1 1.1 15pF 16pF 4pF 65pF 1 7 1 2 3 4 Voltage(V).1 1 1 1 1 1 Frequency(MHz) 1 1 Insertion loss(db) 1 2 3 4 5 15pF 65pF 4pF 16pF 3pF 6.8pF 15pF 3.3pF Capacitance(pF) 1 1 1 15pF 65pF 4pF 16pF 3pF 15pF 6.8pF 3.3pF 6 1 1 1 1 1 Frequency(MHz) 1 1 1 1 1 1 Frequency(MHz)
(7/1) 15pF 33Ω /8kV.1 1MΩ 33Ω Discharge gun Test sample High voltage DC power supply 15pF ESD simulator ESD simulator AVR-M63 V1mA/V1mA(%) 2 1 1 2 3 4 5 6.1 1 1 1 Number of discharge(times) AVR-M15 V1mA/V1mA(%) 2 1 1 2 3 4 5 6.1 1 1 1 Number of discharge(times) AVR-M168 V1mA/V1mA(%) 2 1 1 2 3 4 5 6.1 1 1 1 Number of discharge(times) AVRL11A3R3F Capacitance(pF) [1MHz] 8 7 6 5 4 3 2 1.1 1 1 1 Number of discharge(times)
(8/1) Discharge current(a) 8 7 6 5 4 3 2 1 1 5 5 1 15 2 25 3 Time(ns) Voltage(V) 35 3 25 2 15 1 5 Open waveform 15pF, 33Ω, Contact discharge, Test level 1 AVR-M15C12MTAAB / V1mA:12V AVR-M15C8MTAAB / V1mA:8V Zener diode /Vz:6.2V 5 5 5 1 15 2 25 3 Time(ns) [IEC61-4-2] ESD (kv) 1 (A) (ns) 1 2 7.5.7 to 1. 2 4 15.7 to 1. 3 6 22.5.7 to 1. 4 8 3.7 to 1. Discharge gun ESD simulator 1MΩ High voltage DC power supply 33Ω 15pF ESD simulator Test sample 6dB attenuator 5Ω Oscilloscope I/O impedance: 5Ω Frequency range: DC to 18GHz Clamping voltage(v) 35 3 25 2 15 1 5 Peak Average Open waveform 271V 11V 258V 93V AVR-M15C8MTAAB AVR-M15C12MTAAB Zener diode/vz:6.2v 316 45 58 47 117 16 24 21 269V 96V (voltage) Peak voltage Average voltage Peak voltage:peak voltage of standing up part Average voltage : Average voltage of 3 to 1ns ESD (Electro Static Discharge) absorption characteristics of V1mA-8V is superior to Vz-6.2V Zener diode. 3 1 (ns)
(9/1) (1) (2) Microphone/Receiver To LCD driver.8mm.5mm LCD panel 2.3mm 1.2mm 65% Key pad/switch Backlight LED Data terminal Audio/out Audio AMP Audio connector / Monitor OUT Video1 in Video2 in Video3 in Video5 in Digi Video Video Video Video Audio/out Audio AMP Audio connector L L/MONO L/MONO L/MONO L/MONO Audio Audio Audio Audio Audio R (3) IC AVRCMOS-IC ESD Insulation resistance of tested circuit(ω) 1 7 1 6 1 5 1 4 1 3 With Zener Diode AVR-M168C12MT6AB 2 4 6 8 1 12 14 ESD voltage(kv) CMOS: D74HC4C ESD generator : Noise Laboratory Co.,Ltd., ESS -63A 2pF-Ω method model equipment Contact type discharge ESD applied point: Vcc-ground
(1/1) USB 2. USB IC D D+ VDD USB cable USB connector F.G. Sample IC USB2. board on PC Test board Test set AVRL11A3R3FT(3.3pF) AVRL11A6R8GT(6.8pF)