Data Sheet PT7C5006 Crystal Oscillator Module ICs. Features. Description. Ordering Information. Application

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1 Features Up to 107MHz operation Capacitors 8pF CG and 16pF CD built-in Inverter amplifier feedback resistor built-in TTL input level 16 ma (VDD = 4.5 V) drive capability 4 ma (VDD = 4.5 V) drive capability (AHx) Output three-state function 2.7 to 5.5 V supply voltage Oscillator frequency output 8-pin SOIC package (xxxw) and Die form (xxxde) available Application Used for crystal oscillator Description PT7C 5006 A N A The series are crystal oscillator module ICs, that incorporate high-frequency, low current consumption oscillator and output buffer circuits. Highly accurate feedback resistors and high-frequency capacitors are built-in, eliminating the need for external components to make a stable 3rd-harmonic oscillator. Ordering Information Part no. Package type xxxw SOIC-8 xxxwe Lead free SOIC-8 xxxde DIE Note : Below is the detailed definition of part no. W Device Type Clock series XO 5006 Series N K H AxA AxB AxC AxD AxE AxF BxC BxE CxC CxD CxE DxC DxE AxA AxB AxC AxD BxC CxD DxC AxA AxB AxC AxD Package W: SOIC-8 DE: die form PT0220(03/06) 1 Ver:0

2 Series Configuration Part No. g m ratio R f (k) Output load (max) (pf) 3V operating Recommended Operating Frequency Rang (MHz) Output load (max) (pf) 5V operating Recommended Operating Frequency Rang (MHz) Output Waveform 2) t r /t f (ns) ANA to 30 8/8 ANB to 40 8/8 ANC to to 60 7/7 Built-in capacitance C G (pf) C D (pf) Input level Output Duty level AND to to 70 7/7 ANE to ) 70 to 100 6/6 ANF ) 80 to 107 6/6 CNC to to to 50 8/8 CND to to 70 8/ TTL CMOS CNE to to 100 7/7 BNC 2 No to to to 70 7/7 BNE 3 No to ) 70 to 107 6/6 DNC 2 No to to to 50 8/8 DNE 3 No to to to 70 7/7 AKA to 30 AKB to 40 AKC to 60 AKD to 70 4/ TTL TTL CKD to 70 BKC 2 No to 70 DKC 2 No to 70 AHA to 30 AHB to 40 AHC to 60 7/ TTL CMOS AHD to 70 1): SOIC package only. 2): 5006xNx: C L = 50pF, CMOS load 5006xKx: C L = 15pF, 10TTL load 5006AHx: C L = 15pF, CMOS load Note: Recommend operating frequency is not the guaranteed value but is measured using PTI s standard crystal. PT0220(03/06) 2 Ver:0

3 Block Diagram XT V DD V DD VDD GND XT C G R f C D Q V DD INH Pin Configuration xxxw INH VDD 8 XT NC 7 XT NC 6 4 GND Q 5 SOIC-8 package Pin Description Pin Sym. Type Description 1 INH I Output state control input. High impedance when LOW. Pull-up resistor built in. 2 XT I Amplifier input. 3 XT O Amplifier output. Crystal oscillator connected between XT and XT 4 GND P Ground 5 Q O Output. Output frequency (f o ). 6,7 NC - No connection 8 V DD P Supply voltage PT0220(03/06) 3 Ver:0

4 Function Description When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. INH Oscillator Q High (or open) Normal operation Output f o frequency Low Normal operation High impedance Maximum Ratings Storage Temperature (die form) o C to +150 o C Storage Temperature (package form) o C to +125 o C Ambient Temperature with Power Applied o C to +85 o C Supply Voltage to Ground Potential (V DD to GND V to7.0v Input Voltage (All Inputs except V DD & GND) V to V DD +0.5V Output Voltage V to V DD +0.5V Output Current (xnx/xkx)... 25mA Output Current (AHx)... 10mA Power Dissipation...200mW (package form) Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PT0220(03/06) 4 Ver:0

5 Recommended Operating Conditions series (package form) Sym. Parameter Series Conditions Min Typ Max Unit f 50MHz, C L =50pF ANA, ANB, CNC, CND, DNC f 70MHz, C L =15pF f 40MHz, C L =15pF V f 70MHz, C L =50pF ANC, AND, BNC, f 100MHz, C L =15pF CNE, DNE f 50MHz, C L =15pF V f 70MHz, C L =15pF V DD Supply voltage f 100MHz, C L =15pF ANE, ANF, BNE f 107MHz, C L =15pF f 50MHz, C L =15pF V f 70MHz, C L =15pF AKA, AKB, AKC, CKD,DKC f 70MHz, C L =15pF V AKD, BKC f 70MHz, C L =15pF V AHA, AHB, AHC, AHD f 70MHz, C L =15pF V V IN Input voltage All series GND - V DD V T OPR Operating temperature ANA, ANB, CNC, CND, DNC ANC, AND, BNC, CNE, DNE ANE, ANF, BNE f 50MHz, C L =50pF, 4.5 V DD f 70MHz, C L =15pF, 4.5 V DD f 40MHz, C L =15pF, 2.7 V DD f 50MHz, C L =50pF,2.7 V DD f 70MHz, C L =50pF,4.5 V DD f 70MHz, C L =15pF,4.5 V DD f 100MHz, C L =15pF, 4.5 V DD f 50MHz, C L =15pF,2.7 V DD f 70MHz, C L =15pF,3.0 V DD f 70MHz, C L =50pF,4.5 V DD f 100MHz, C L =15pF,4.5 V DD f 107MHz, C L =15pF,4.5 V DD f 50MHz, C L =15pF,2.7 V DD f 70MHz, C L =15pF,3.0 V DD AKA, AKB, AKC, f 50MHz, C L =15pF,4.5 V DD CKD, DKC f 70MHz, C L =15pF,4.5 V DD AKD, BKC f 50MHz, C L =15pF,4.5 V DD f 70MHz, C L =15pF,4.5 V DD AHA, AHB, AHC, f 50MHz, C L =15pF,4.5 V DD AHD f 70MHz, C L =15pF,4.5 V DD PT0220(03/06) 5 Ver:0

6 series (die form) Sym. Parameter Series Condition Min Typ Max Unit f 50MHz, C L =50pF ANA, ANB, CNC, CND, DNC f 70MHz, C L =15pF f 40MHz, C L =15pF V f 70MHz, C L =50pF ANC, AND, BNC, f 100MHz, C L =15pF CNE, DNE f 50MHz, C L =15pF V f 70MHz, C L =15pF V DD Supply voltage f 100MHz, C L =15pF ANE, ANF, BNE f 7MHz, C L =15pF f 50MHz, C L =15pF V f 70MHz, C L =15pF AKA, AKB, AKC, CKD,DKC f 70MHz, C L =15pF V AKD, BKC f 70MHz, C L =15pF V AHA, AHB, AHC, AHD f 70MHz, C L =15pF V V IN Input voltage All series GND - V DD V T OPR Operating temperature ANA, ANB, CNC, CND, DNC ANC, AND, BNC, CNE, DNE ANE, ANF, BNE f 50MHz, C L =50pF, 4.5 V DD f 70MHz, C L =15pF, 4.5 V DD f 40MHz, C L =15pF, 2.7 V DD f 70MHz, C L =50pF,4.5V DD f 100MHz, C L =15pF, 4.5 V DD f 50MHz, C L =15pF,2.7 V DD f 70MHz, C L =15pF,2.7 V DD f 70MHz, C L =50pF,4.5 V DD f 100MHz, C L =30pF,4.5 V DD f 107MHz, C L =30pF,4.5 V DD f 50MHz, C L =15pF,2.7 V DD f 70MHz, C L =15pF,3.0 V DD AKA, AKB, AKC, f 50MHz, C L =15pF,4.5 V DD CKD, DKC f 70MHz, C L =15pF,4.5 V DD AKD, BKC f 50MHz, C L =15pF,4.5 V DD f 70MHz, C L =15pF,4.5 V DD AHA, AHB, AHC, f 50MHz, C L =15pF,4.5 V DD AHD f 70MHz, C L =15pF,4.5 V DD PT0220(03/06) 6 Ver:0

7 DC Electrical Characteristics N series 3V operation: V DD = 2.7 to 3.6V, T A = -20 to 80C unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit f =30MHz f =30MHz, T A = -10 to 70 ANC BNC CNC I DD Current consumption INH =open, Load cct 1, V DD =3.0 to 3.6V, C L =15pF f =50MHz AND f =70MHz f =40MHz, T A = -10 to 70 BNE CNE DNE CND DNC ma f =70MHz ANE ANF V IH High-level input voltage INH V V IL Low-level input voltage INH V R up INH pull-up resistance Measurement cct k R f Feedback resistance Measurement cct 5 ANA ANB ANC, CNC AND, ANE, ANF, CND, CNE C G Design value, determined by the value internal pattern Built-in capacitance Design value, determined by the value internal pattern C D V OH High-level output voltage Q: Measurement cct 1, V DD =2.7V, I OH =8mA V V OL Low-level output voltage Q: Measurement cct 2, V DD =2.7V, I OL =8mA V I Z Output leakage current Q: Measurement cct 2, INH=LOW, V OH = V DD V DD = 5.5V V OL = GND k pf μa PT0220(03/06) 7 Ver:0

8 N series 5V operation: V DD = 4.5 to 5.5V, T A = -40 to 85 unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit f = 30MHz ANA I DD Current consumption INH =open, Measurement cct 3, Load cct 1, V DD =4.5 to 5.5V, C L =50pF INH =open, Measurement cct 3, Load cct 1, V DD =4.5 to 5.5V f = 40MHz, ANB f = 60MHz ANCDE f = 60MHz, T A = -20 to 80 ANCW f = 70MHz ANDDE BNCDE f =70MHz, ANDW T A = -20 to 80 BNCW f =60MHz, C L =15pF T A = -15 to 75 CNCDE f =60MHz, C =15pF L T A = 0 to 70 CNCW L T A = -15 to 75 f = 70MHz, C =15pF CNDDE DNCDE f =70MHz, C L =15pF CNDW T A = 0 to 70 DNCW f = 100MHz, C L =15pF CNEDE T A = -20 to 80 DNEDE f = 100MHz, C L =15pF CNEW T A = 0 to 70 DNEW f = 100MHz, C L =30pF ANEDE f =100MHz, C L =15pF ANEW f =107MHz, C L =30pF T A = -20 to 80 ANFDE BNEDE f =107MHz, C L =15pF ANFW T A = -20 to 80 BNEW V IH High-level input voltage INH V V IL Low-level input voltage INH V R up INH pull-up resistance Measurement cct k ANA ANB R ANC, CNC f Feedback resistance Measurement cct 5 AND, ANES, k ANF, CND, CNE C G Design value, determined by the value internal pattern Built-in capacitance C D Design value, determined by the value internal pattern pf V OH High-level output voltage Q: Measurement cct 1, V DD =4.5V,I OH =16mA V V OL Low-level output voltage Q: Measurement cct 2, V DD =4.5V,I OL =16mA V I Z Output leakage current Q: Measurement cct 2, INH=LOW, V OH = V DD V DD =5.5V V OL = GND μa ma PT0220(03/06) 8 Ver:0

9 K series V DD = 4.5 to 5.5V, T A = -40 to 85C unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit I DD Current consumption INH = open, Load cct 1, V DD = 4.5 to 5.5V, C L =15pF f =30MHz AKA f =40MHz AKB f = 60MHz, AKCDE T A = -15 to 75 DKCDE f =60MHz, T A = 0 to 70 f =70MHz, T A = -20 to 80 f =70MHz, T A = -15 to 75 f = 70MHz, T A = 0 to 70 AKCW DKCW AKDDE BKCDE CKDDE AKDW BKCW CKDW V IH High-level input voltage INH V V IL Low-level input voltage INH V R up INH pull-up resistance Measurement cct k R f Feedback resistance Measurement cct 5 AKA AKB AKC AKD, CKD C G Design value, determined by the value internal pattern Built-in capacitance Design value, determined by the value internal pattern C D V OH High-level output voltage Q: Measurement cct 1, V DD =4.5V, I OH =16mA AKA, AKB AKC, CKD, DKC AKD, BKC V OL Low-level output voltage Q: Measurement cct 2, V DD = 4.5V, I OL = 16mA V I Z Output leakage current Q: Measurement cct 2, INH=LOW, V OH = V DD V DD = 5.5V V OL = V SS ma k pf V μa PT0220(03/06) 9 Ver:0

10 AH series V DD = 4.5 to 5.5V, T A = -40 to 85C unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit I DD Current consumption INH=open, Load cct 1, V DD = 4.5 to 5.5V, C L = 15pF f = 30MHz AHA f = 40MHz, AHB f = 60MHz, T A =-20 to 80 f = 60MHz, T A = -15 to 75 f = 70MHz, T A = -20 to 80 f =70MHz, T A = -15 to 75 AHCDE AHCW AHDDE AHDW V IH High-level input voltage INH V V IL Low-level input voltage INH V R up INH pull-up resistance Measurement cct k R f Feedback resistance Measurement cct 5 AHA AHB AHC AHD C G Design value, determined by the value internal pattern Built-in capacitance Design value, determined by the value internal pattern C D V OH High-level output voltage Q: Measurement cct 1, V DD = 4.5V,I OH = 4mA V V OL Low-level output voltage Q: Measurement cct 2, V DD = 4.5V,I OL = 4mA V I Z Output leakage current Q: Measurement cct 2, INH = LOW, V OH = V DD V DD =5.5V V OL = GND ma k pf μa PT0220(03/06) 10 Ver:0

11 AC Electrical Characteristics Output duty level (CMOS) Data Sheet Output duty level (TTL) Output duty cycle (CMOS) Output duty cycle (TTL) PT0220(03/06) 11 Ver:0

12 N series 3V operation: V DD = 2.7 to 3.6V, T A = -20 to 80C, unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit t r Output rise time Load cct 1, 0.1V DD to 0.9V DD, C L = 15pF T A = -10 to 70 ANA, ANB, CNC, CND, DNC ANC, AND, ANE, ANF, BNC, BNE, CNE, DNE ns t f Output fall time Load cct 1, 0.9V DD to 0.1V DD, C L = 15pF T A = -10 to 70 ANA, ANB, CNC, CND, DNC ANC, AND, ANE, ANF, BNC, BNE, CNE, DNE ns f = 30MHz ANA, ANB, ANC, CNC Duty Output duty cycle*1 Load cct 1, T A = 25, V DD = 3.3V, C L = 15pF f = 40MHz f = 50MHz CND, DNC AND, BNC % f = 70MHz ANE, ANF, BNE, CNE, DNE t PLZ Output disable delay time ns Load cct 1, T A = 25, V DD = 5V, C L 15pF t PZL Output enable delay time ns PT0220(03/06) 12 Ver:0

13 N series 5V operation: V DD = 4.5 to 5.5V, T A = -40 to 85 unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit t r Output rise time Load cct 1, 0.1V DD to 0.9V DD C L = 15pF C L = 30pF C L = 50pF C L = 15pF ANA, ANB, CNC, CND, DNC ANC, AND, BNC, CNE, DNE ANEDE, ANFDE, BNEDE ANA, ANB, CNC, CND, DNC ANC, AND, BNC, CNE, DNE ANE, ANF, BNE ANA, ANB, CNC, CND, DNC ANC, AND, BNC, CNE, DNE ns t f Output fall time Load cct 1, 0.9V DD to 0.1V DD C L = 30pF ANEDE, ANFDE, BNEDE ANA, ANB, CNC, CND, DNC ns C L = 50pF ANC, AND, BNC, CNE, DNE to be continued -- ANE, ANF, BNE PT0220(03/06) 13 Ver:0

14 -- to be continued -- Sym. Parameter Condition Min Typ Max Unit f =30MHz, C L =50pF ANA f =40MHz, C L =50pF ANB f =60MHz, C L =50pF ANC f =70MHz, C L =50pF AND, BNC f =100MHz, C L =30pF ANEDE Duty Output duty cycle Load cct 1, T A =25, V DD =5.0V f =100MHz, C L =15pF ANEW f =107MHz, C L =30pF f =107MHz, C L =15pF f =50MHz, C L =50pF ANFDE BNEDE ANFW BNEW CNC DNC % f =100MHz, C L =15pF CNE DNE f =60MHz, C L =15pF CNC t PLZ t PZL Output disable delay time Output enable delay time f =70MHz, C L =15pF CND DNC Load cct 1, T A = 25, V DD = 5V, C L 15pF ns ns PT0220(03/06) 14 Ver:0

15 K series 5V operation: V DD = 4.5 to 5.5V, T A = -40 to 85 unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit t r t f Output rise time Output fall time Duty Output duty cycle Load cct 1, C L =15pF V to 2.4V,V DD = 4.5 to 5.5V C L =50pF Load cct1, C L =15pF V to 0.4V,V DD = 4.5 to 5.5V C L =50pF Load cct 1, T A =25, V DD =5.0V, C L =15pF f =30MHz AKA f =40MHz AKB f =60MHz AKC f =70MHz AKD BKC f =50MHz DKC f =70MHz CKD DKC t PLZ Output disable delay time Load cct 1, T A = 25, ns t PZL Output enable delay time V DD = 5V,C L 15PF ns ns ns % AH series V DD = 4.5 to 5.5V, T A = -40 to 85 unless otherwise noted. Sym. Parameter Condition Min Typ Max Unit t r Load cct 1, C L =15pF Output rise time ns 0.1 V DD to 0.9V DD C L =50pF t f Output fall time Load cct 1, C L =15pF V DD to 0.1V DD C L =50pF ns f =30MHz AHA f =40MHz AHB f =50MHz AHC Load cct 1, T A =25, f =60MHz AHCDE Duty Output duty cycle *1 V DD =5.0V, T A =-20 to 80 % C L =15pF f =60MHz AHCW T A =-15 to f =70MHz AHDDE T A =-20 to f =70MHz AHDW T A =-15 to t PLZ Output disable delay time Load cct 1, T A = 25, ns t PZL Output enable delay time V DD = 5V, C L 15PF ns PT0220(03/06) 15 Ver:0

16 Measurement Circuit Measurement cct 1 Measurement cct 3 3.5V P-P, 10MHz sine wave input signal (5V operation) 2.0V P-P, 10MHz sine wave input signal (3V operation) C1: 0.001μF R1: 50 R2: 250 (5006 N /5V operation) 275 (5006 N /3V operation) 245 (5006AKA, AKB, AKC, CKD, DKC) 250 (5006AKD, BKC) 975 (5006AH ) R fo : 2.7k (5006B, D ) R fo : 2.7k (5006B, D) Measurement cct 4 Measurement cct 2 Measurement cct 5 Load cct 1 Load cct 2 PT0220(03/06) 16 Ver:0

17 Mechanical Information W/WE (SOIC-8) Data Sheet x 45 o o REF SEATING PLANE BSC X.XX X.XX DENOTES DIMENSIONS IN MILLIMETERS Note: 1) Controlling dimensions in millimeters. 2) Ref: JEDEC MS-012 AA PT0220(03/06) 17 Ver:0

18 Pad Location of Sensor INH VDD Die No. XT XT Q GND Pad Coordinate File Pad Name X Coordinate Y Coordinate Pad Name X Coordinate Y Coordinate sensor GND INH VDD XT Q XT Note: Substrate is connected to GND or VDD or floating. Die Size: 950m*800m (Including scribe line size.) Die Thickness: 26525m Pad Size: 100m*100m PT0220(03/06) 18 Ver:0

19 Notes Data Sheet Pericom Technology Inc. Web Site: China: Asia Pacific: U.S.A.: No. 20 Building, 3/F, 481 Guiping Road, Shanghai, , China Tel: (86) Fax: (86) Unit 1517, 15/F, Chevalier Commercial Centre, 8 Wang Hoi Rd, Kowloon Bay, Hongkong Tel: (852) Fax: (852) North First Street, San Jose, California 95134, USA Tel: (1) Fax: (1) Pericom Technology Incorporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Pericom Technology does not assume any responsibility for use of any circuitry described other than the circuitry embodied in Pericom Technology product. The company makes no representations that circuitry described herein is free from patent infringement or other rights, of Pericom Technology Incorporation. PT0220(03/06) 19 Ver:0

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