NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

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1 FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP ELECTRICAL CHARACTERISTICS (TA = 5 C) DESCRIPTION NE944 SERIES The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. PART NUMBER NE944 NE944 EIAJ REGISTERED NUMBER SC484 SC545 PACKAGE CODE SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICBO Collector Cutoff Current, VCB = V, IE = µa.. hfe DC Current Gain, VCE = V, IC = 5. ma VCE(sat) Collector Saturation Voltage, IC = ma, IB =. ma V.5.5 ft Gain Bandwidth Product, VCE = V, IE = 5 ma GHz.... COB Output Capacitance, VCB = V, IE = ma, f =. MHz pf.7. CC rb'b Collector to Base Time Constant, VCE = V, IE = -5. ma, f =.9 MHz ps CRE Feedback Capacitance, VCB = V, IE = ma, f =. MHz pf.55. RTH (J-C) Thermal Resistance, Junction to Case (infinite heat sink) C/W RTH (J-A) Thermal Resistance, Junction to Ambient (free air) C/W 8 6 PT Power Dissipation mw 5 5. Electronic Industrial Association of Japan. California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V 5 VEBO Emitter to Base Voltage V. IC Collector Current ma 5 Gain Bandwidth Product, ft (GHz) TJ Junction Temperature NE944, NE944 C 5 NE944 C 5 TSTG Storage Temperature C -55 to +5. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NE944 FREE AIR FREE AIR Ambient Temperature, TA ( C) NE944 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = -5 V Collector Current, IC (ma) Collector to Base Voltage, VCB (V) DC Current Gain, hfe Feedback Capacitance, Cre (pf) 9 5 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, IC (ma) VCE = V VCE = V TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f =. MHz

3 NE944 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.5 ma VCE = V, IC = 5 ma VCE = V, IC = 5 ma NE944 SERIES NE944 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT VCE IC (MHz) (db) (db) MAG ANG Rn/5 (V) (ma) VCE = 8 V, IC = 5 ma VCE = V, IC = 5 ma

4 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) NE944 j -j j5 -j5 VCE =.5 V, IC =.5 ma j5 S 5 5 -j5 j.5 GHz -j S.5 GHz Coordinates in Ohms Frequency in GHz (VCE =.5 V, IC =.5 ma) FREQUENCY S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCE = V, ICE = 5 ma Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 5 S 8.5 GHz S..5 GHz S -9 6 S

5 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j -j j5 -j5 j5 5 5 S -j5.5 GHz j -j S.5 GHz Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) NE944 VCE = V, IC = ma FREQUENCY S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCE = V, Ic = 5 ma Gain Calculations: MAG = S S MAG = Maximum Available Gain MSG = Maximum Stable Gain S.5 GHz S.5 GHz S S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S

6 TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 5 C) j j5 Coordinates in Ohms Frequency in GHz (VCB =.5 V, IC =.5 ma) NE944 VCB =.5 V, IC =.5 ma FREQUENCY S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCB = V, lc = 5 ma VCE = V, IC = ma -j -j5 j GHz S -j5 j S.5 GHz -j Gain Calculations: S S 6-6. S.5 GHz S.5 GHz MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain -

7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) S Coordinates in Ohms.4 GHz Frequency in GHz 8 -j5 -j (VCE = V, IC = 5 ma) - -6 NE944 -j5-9 VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, lc = ma VCE = V, IC = ma Gain Calculations: MAG = S S j j5 (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain -j.4 GHz j5 5 5 j S.5 GHz.5 GHz S S.5 GHz..5.5 GHz S.4 GHz S.4 GHz..5 -

8 OUTLINE DIMENSIONS (Units in mm). ± ±..9 ± PACKAGE OUTLINE.5. to.4.8. ±..5 ± to (ALL LEADS) LEAD CONNECTIONS. Emitter. Base. Collector (ALL LEADS) LEAD CONNECTIONS. Emitter. Base. Collector.6 PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT ORDERING INFORMATION MARKING to PART NUMBER QUANTITY PACKAGING NE944-T Tape & Reel NE944-TB Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex 4-69 FAX (48) Hour Fax-On-Demand: 8-9- (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 9//

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