High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
|
|
|
- Αδελφά Λιακόπουλος
- 5 χρόνια πριν
- Προβολές:
Transcript
1 High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification variations. AGC Power Output Small Signal Gain Range Noise Figure At 1dB Compression Response AGC SWR db db db dbm Time Control In/Out D.C. Frequency Model Range Min. Min. Max. Max. Min. Min. ( s) Volts I(mA) Max. Max. Volts ma MHz Typ. 0/50C -55/85C Typ. Typ. 0/50C -55/85C Typ 0/50C -55/85C Typ. 0/50C -55/85C Nom. Typ. Available in TO-8 Attenuator, TO-3 and SMA Packages (depending on model) Vc = 0 AGC to 5 0 to AGC to 5 0 to to 5 0 to AGC to 5 0 to AGS to 5 0 to AGC to 5 0 to AGC to 5 0 to to 5 0 to 1.8/ / VOLTAGE CONTROLLED AMPLIFIERS Current data sheets available on website Fax: Updates:
2 Rev. 5/ AGC TO 250 MHz TO-8 GAIN CONTROL AMPLIFIER Typical Values Gain High AGC Range HighControl Range Low Noise Figure High Performance Thin Film Standard Size TO-8 Package AGC db 50.0 db 0 to +5 Volts 5.0 db AGC230 TO-8 Package for Gain Control Amplifiers SPECIFICATIONS * Guaranteed Parameter Typical 0 to 50 C -55 to +85 C Frequency (Min.) -300 MHz MHz MHz Gain V contr. = 0 Volts 46.0 db 42.0 db 40.0 db Gain V contr.=+5 Volts -5.0 db -1.0 db Gain Flatness V contr. = 0 Volts 20-0 MHz ±0.5 db ±1.0 db ±1.5 db MHz ±1.5 db ±2.0 db ±2.5 db Noise Figure V contr. = 0 Volts 5.0 db 6.0 db 6.5 db SWR (Max.) Input/Output < 1.6:1 2.0:1 2.0:1 Power Output contr. = 0 Volts +8.5 dbm +7.5 dbm +7.0 dbm Response Time Full AGC µsec 20 db AGC 5 µsec DC Current (Max.) Bias 62 ma 65 ma 68 ma * Measured in a 50-ohm system at +15 Vdc unless otherwise specified. ^ AGC Voltage: 0 to +5 Volts INTERMODULATION PERFORMANCE 25 C Vcontrol = 0 Volts AGC230 Second Order Harmonic Intercept Point dbm Second Order Two Tone Intercept Point dbm Third Order Two Tone Intercept Point dbm ABSOLUTE MAXIMUM RATINGS Storage Temperature to +125 C Maximum Case Temperature C Maximum DC Voltage Volts Maximum Continuous RF Input Power dbm Maximum Short Term Input Power (1 Minute Max.) Milliwatts Maximum Peak Power (3 µsec Max.) Watt Maximum Control Voltage Volts Burn-in Temperature C Thermal Resistance 1 (θjc) C/Watt Junction Temperature Rise Above Case (Tjc) C 1 Thermal resistance is based on total power dissipation. Connectorized attenuator case available. DIMENSIONS ARE IN INCHES [MILLIMETERS] SWITCHING SPEED Typical Switching Speed at 25 C Full AGC, 0 MHz 20 db AGC, 0 MHz
3 AGC230 TYPICAL PERFORMANCE TYPICAL AUTOMATIC TEST DATA KEY: +25 C +85 C -55 C Gain vs Frequency vs Control Voltage MODEL: AGC230 Vcc = +15V Icc = ma Vcontrol = 0.0V NOISE FIGURE - db PHASE - DEGREES Phase vs Frequency Noise Figure Vcc= Power Output at 1 db Compression +15v, +12v, MODEL: AGC230 Vcc = +15V Icc = ma Vcontrol = 2.0 V MODEL: AGC230 Vcc = +15V Icc = ma Vcontrol = 5.0 V Intercept Point Vcc= +15, Vc= Power vs. Attenuation vs. Voltage Intercept Point Vcc= +15, Vc= 0 70 MHz Gain vs. Control Voltage 0 MHz
4 Rev. 5/ TO 500 MHz TO-8 GAIN CONTROL AMPLIFIER Typical Values Medium Gain Medium AGC Range Control Range Low Noise Figure High Performance Thin Film Standard Size TO-8 Package 25.5 db 30.0 db 0 to +5 Volts 5.0 db TO-8 Package for Gain Control Amplifiers SPECIFICATIONS * Guaranteed Parameter Typical 0 to 50 C -55 to +85 C Frequency (Min.) -600 MHz -500 MHz -500 MHz Gain (Min.) Vc = db 24.5 db 24.0 db Gain Flatness (Max.) ±0.5 db ±0.7 db ±0.8 db AGC Range (Min.) 30 db 26 db Noise Figure (Max.) 5.0 db 6.0 db 6.5 db SWR (Max.) Input/Output < 1.6:1 2.0:1 2.0:1 Power Output 1dB comp dbm +.0 dbm +9.5 dbm Response Time Full AGC < µsec DC Current (Max.) Bias 45 ma 48 ma 51 ma DC Current (Max.) Vc^ 0 to ma * Measured in a 50-ohm system at +15 Vdc and 0.0 Control Voltage unless otherwise specified. ^ AGC Voltage: 0 to +5 Volts. INTERMODULATION PERFORMANCE 25 C; at Vc = 0, at 200 MHz Second Order Harmonic Intercept Point Second Order Two Tone Intercept Point Third Order Two Tone Intercept Point ABSOLUTE MAXIMUM RATINGS +36 dbm +30 dbm +20 dbm Storage Temperature to +125 C Maximum Case Temperature C Maximum DC Voltage Volts Maximum Continuous RF Input Power dbm Maximum Short Term Input Power (1 Minute Max.) Milliwatts Maximum Peak Power (3 µsec Max.) Watt Maximum Control Voltage Volts Burn-in Temperature C Thermal Resistance 1 (θjc) C/Watt Junction Temperature Rise Above Case (Tjc) C 1 Thermal resistance is based on total power dissipation. Connectorized attenuator case available. DIMENSIONS ARE IN INCHES [MILLIMETERS] SWITCHING SPEED Typical Switching Speed at 25 C Full AGC, 0 MHz Half AGC, 0 MHz
5 PHASE - DEGREES NOISE FIGURE - db TYPICAL PERFORMANCE KEY: +25 C +85 C -55 C Gain vs Frequency vs Control Voltage Phase vs Frequency vs Control Voltage Noise Figure Vcc = 15 vs phase of the moon Power Output at 1 db Compression +15v, +12v, 6.0 TYPICAL AUTOMATIC TEST DATA MODEL: Vcc = +15V Icc = ma Vcontrol = 0.0V Gmax = 25.9 Gmin = 24.9 Gflat = 0.96 INvswr max = 1.6 OUTvswr max = 1.3 MODEL: Vcc = +15V Icc = ma Vcontrol = 2.0 V Gmax =.7 Gmin = 7.3 Gflat = 3.44 INvswr max = 1.4 OUTvswr max = 1.6 MODEL: Vcc = +15V Icc = ma Vcontrol = 5.0 V Gmax = -2.9 Gmin = 7.4 Gflat = 4.51 INvswr max = 1.6 OUTvswr max = Power Output vs Control Voltage Intercept Point Vcc = 15, Vc = 2.0 Intercept Point Vcc = 15, Vc = 0 0 MHz Gain vs Control Voltage 0 MHz
6 Rev. 5/ 700 TO 2500 MHz SMTO-8 GAIN CONTROL AMPLIFIER Typical Values Broad Bandwidth Medium Output Level AGC Range (Vc = 0 to 5) High Performance Thin Film Surface Mount TO-8 Package MHz dbm +20 db SMTO-8 Package for Gain Control Amplifier SPECIFICATIONS * Guaranteed Parameter Typical 0 to 50 C -55 to +85 C Frequency (Min.) GHz GHz GHz Small Signal Gain (Min.) 5.5 db 4.8 db 4.3 db Gain Flatness (Max.) ±0.2 db ±0.4 db ±0.5 db AGC Range (Min.) 20 db 18 db Noise Figure (Max.) 5.5 db 6.0 db 6.5 db SWR (Max.) Input <1.6:1 1.8:1 2.0:1 Output <1.9:1 2.1:1 2.2:1 Power Output 1dB comp dbm dbm dbm Response Time Full AGC <3 µsec DC Current (Max.) Bias 60.0 ma 64.0 ma 68.0 ma * Measured in a 50-ohm system at +5 Vdc and 0.0 Control Voltage unless otherwise specified. ^ AGC Voltage: 0 to +5 Volts. AGC2520 TO-8 Package for Gain Control Amplifiers INTERMODULATION PERFORMANCE 25 C, Vc = 0, 1500 MHz Second Order Harmonic Intercept Point Second Order Two Tone Intercept Point Third Order Two Tone Intercept Point ABSOLUTE MAXIMUM RATINGS +42 dbm +36 dbm +26 dbm Storage Temperature to +125 C Maximum Case Temperature C Maximum DC Voltage Volts Maximum Continuous RF Input Power dbm Maximum Short Term Input Power (1 Minute Max.) Milliwatts Maximum Peak Power (3 µsec Max.) Watt Burn-in Temperature C Thermal Resistance 1 (θjc) C/Watt Junction Temperature Rise Above Case (Tjc) C 1 Thermal resistance is based on total power dissipation. Connectorized attenuator case available. DIMENSIONS ARE IN INCHES [MILLIMETERS]
7 TYPICAL PERFORMANCE TYPICAL AUTOMATIC TEST DATA PHASE - DEGREES NOISE FIGURE - db KEY: +25 C +85 C -55 C Gain vs Frequency vs Control Voltage -25 Phase vs Frequency vs Control Voltage Noise Figure Vcc = vs phase of the moon Power Output at 1 db Compression +5v, 12.0 Power Output vs Control Voltage 2500 MHz a 00 MHz Model: Vcc= +5V Icc= Vcontrol= +0.0V FREQ SWR SWR GAIN PHASE DELAY REV/ISO MHZ IN OUT DB DEG NSEC DB Model: Vcc= +5V Icc= Vcontrol= +2.0V FREQ SWR SWR GAIN PHASE DELAY REV/ISO MHZ IN OUT DB DEG NSEC DB Model: Vcc= +5V Icc= Vcontrol= +5.0V FREQ SWR SWR GAIN PHASE DELAY REV/ISO MHZ IN OUT DB DEG NSEC DB INTERMODULATION - dbm INTERMODULATION - dbm CONTROL VOLTAGE - VDC Intercept Point Vcc = 5, Vc = 0 Gain vs Control Voltage 00 MHz Intermodulation vs. Control Voltage 00 MHz 0 CONTROL VOLTAGE - VDC Intermodulation vs. Control Voltage 2500 MHz CONTROL VOLTAGE - VDC
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625
4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features 4.8 Volt Operation +28. dbm P out @ 9 MHz, Typ. 7% Collector Efficiency @ 9 MHz, Typ. 9 db Power Gain @ 9 MHz, Typ.
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
AT Low Current, High Performance NPN Silicon Bipolar Transistor
AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are
Output Power: W. Exclusively distributed by Powerstax
R Series, 50-150W Input Ranges : 9-75 VDC : Single - Dual /, / /, / Triple / ±, /, / ±0, Quad ± / ±, ± / : 50-150 W FEATURES General: to 100 Watts Wide Input Range : 10-7dc 2:1 & 3:1 Input Range High Conversion
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
Input Ranges : 9-75 VDC
D Series, 10- Input Ranges : 9-75 VDC : Single 3.3V - 24V Bipolar ±5.0V, ±12V, ±15V Dual +5.0V / Triple +5.0V / ±12V +5.0V / ±15V Power: 6.6 to 15 W The D series DC-DC converters feature high power density,
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
+85 C Snap-Mount Aluminum Electrolytic Capacitors. High Voltage Lead free Leads Rugged Design. -40 C to +85 C
+85 C Snap-Mount Capacitors FEATURES High ripple Current Ratings Large Case Size Selection Extended Life High Voltage Lead free Leads Rugged Design SPECIFICATIONS Tolerance ±20% at 120Hz, 20 C Operating
Gearmotor Data. SERIES GM9000: We have the GM9434H187-R1
SERIES GM9: We have the GM9434H187-R1 Gearmotor Data Item Parameter Symbol Units 5.9:1 11.5:1 19.7:1 38.3:1 65.5:1 127.8:1 218.4:1 425.9:1 728.1:1 1419.8:1 2426.9:1 4732.5:1 1 Max. Load Standard Gears
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
Aluminum Capacitors C, Tubular, Radial Lead
Aluminum Capacitors + 105 C, Tubular, Radial Lead FEATURES Wide temperature range Radial design in two and three lead configuration Ideal SMPS output filter PERFORMANCE CHARACTERISTICS Operating Temperature:
ELWOOD HIGH PERFORMANCE MOTORS H-SERIES MOTOR DATA
H-SERIES MOTOR DATA MOTOR MODEL H-3007 H-3016 H-4030-P H-4030-M H-4040 H-4050 H-4075 H-6100 H-6200 H-6300 MECHANICAL DATA (1) Rated Torque, Cont (Stall) 0.8 2.3 3.4 3.4 5.0 6.8 10.2 11.3 22.6 36.7 lb-in
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
MAX3970 MAX3970. Maxim Integrated Products ; Rev 1; 10/01 3.3V SUPPLY FILTERING V CC 1 V CC 2 3.3V FILTER R F.
19-197; Rev 1; 1/1 Ω µ + + µ PART TEMP. RANGE PIN-PACKAGE U/D C to +85 C Dice Note: Dice are designed to operate over a C to +11 C junction temperature (T J ) range, but are tested and guaranteed at T
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
WIRE WOUND CHIP INDUCTORS
FEATURES High Self-Resonance Frequency Stable inductance at high frequency Tight inductance tolerance High Q factory High current Low DCR APPLICATIONS Antenna amplifiers Mobile phone Key entry GPS (Global
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
ΠΡΟΣΚΛΗΣΗ ΕΝΔΙΑΦΕΡΟΝΤΟΣ KAI ΚΑΤΑΘΕΣΗΣ ΠΡΟΣΦΟΡΩΝ ΓΙΑ ΤΗΝ ΑΝΑΘΕΣΗ ΤΗΣ ΠΡΟΜΗΘΕΙΑΣ
ΕΘΝΙΚΟ ΚΕΝΤΡΟ ΕΡΕΥΝΑΣ ΚΑΙ ΤΕΧΝΟΛΟΓΙΚΗΣ ΑΝΑΠΤΥΞΗΣ (Ε.Κ.Ε.Τ.Α.) / Ινστιτούτο Βιώσιμης Κινητικότητας και Δικτύων Μεταφορών (ΙΜΕΤ) Θεσσαλονίκη, 29-05-2017 Αριθμ. Πρωτ.: 000158 ΠΡΟΣΚΛΗΣΗ ΕΝΔΙΑΦΕΡΟΝΤΟΣ KAI ΚΑΤΑΘΕΣΗΣ
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
CASE DIMENSIONS: 1.27±0.13 (0.050±0.005) A 2.54 (0.100) 1.27 (0.050) 1.27 (0.050) 1.27±0.13 (0.050±0.005) B 3.81 (0.150) 1.27 (0.050) 1.27 (0.
MARKING (White marking on black body) Polarity Stripe (+) Code Rated Voltage The T4Z HRC4000 Medical Grade series is designed for use in non-critical medical applications. The T4Z product line is based
Thick Film Chip Resistors
FEATURES STANDARD SIZING 0402 (1/16W), 0603 (1/10W), 0805 (1/8W), 1206 (1/4W), 2010 (1/2W) AND 2512 (1W) HIGH VOLTAGE (100VDC ~ 3,000VDC) HIGH RESISTANCE VALUES (UP TO 100MW) THICK FILM ON ALUMINA SUSTRATE,
Ferrite Chip Beads For Automotive Use
FETURES RUGGED CONSTRUCTION IN STNDRD EI SIZES EC Q-200 QULIFIED EFFECTIVE EM/RFI SUPPRESSION UP TO 1GHz CURRENT RTINGS UP TO 2.2 MPS SHRP ND HIGH IMPEDNCES VILLE OPERTING TEMPERTURE RNGE: -55 C TO +125C
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
Anti-Corrosive Thin Film Precision Chip Resistor (PR Series)
(PR Series) Features -Long term life stability and demonstrated the Anti Corrosion claims -Special passivated NiCr film for Anti-Acid and Anti-Damp -Tight tolerance down to ±0.1% -Extremely low TCR down
Operating Temperature Range ( C) ±1% (F) ± ~ 1M E-24 NRC /20 (0.05) W 25V 50V ±5% (J) Resistance Tolerance (Code)
FEATURES EIA STANDARD SIZING 0201(1/20), 0402(1/16), 0603(1/10), 0805(1/8), 1206(1/4), 1210(1/3), 2010(3/4) AND 2512(1) METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE..(CERMET) PROVIDES UNIFORM
Thin Film Chip Resistors
FETURES PRECISE TOLERNCE ND TEMPERTURE COEFFICIENT EI STNDRD CSE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERLE (Pb FREE TERMINTION FINISH) Type EI Size Power Rating at 70
SMD AVR AVR-M AVRL. Variable resistor. 2 Zener diode (1/10) RoHS / / j9c11_avr.fm. RoHS EU Directive 2002/95/EC PBB PBDE
(1/1) SMD RoHS AVR AVR-M AVRL Variable resistor 2Zener diode Current(A) Positive direction 1 1 1 2 1 3 1 4 1 5 Zener diode /Vz:6.8V Chip varistor /V1mA:12V 2 Zener Diodes A capacitance content 18 14 1
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
![C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]](/thumbs/90/101883046.jpg "C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]")
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
SD57045 RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION
± 20% ± 5% ± 10% RENCO ELECTRONICS, INC.
RL15 RL16, RL17, RL18 MINIINDUCTORS CONFORMALLY COATED MARKING The nominal inductance is marked by a color code as listed in the table below. Color Black Brown Red Orange Yellow Green Blue Purple Grey
5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529
FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
DC SERVO MOTORS Previous N23XX Series. EC057C Series Salient Characteristics
US: +1 267 933 215 Europe: +33 2 92 87 51 sia: +86 21 5763 18 Harleysville, P 438 DC SERO MOTORS BRUSHESS DC MOTORS The EC57C series brushless DC motor is a high torque density model brushless motor in
65W PWM Output LED Driver. IDPV-65 series. File Name:IDPV-65-SPEC
IDPV65 series ~ A File Name:IDPV65SPEC 07060 IDPV65 series SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note.
60W AC-DC High Reliability Slim Wall-mounted Adaptor. SGA60E series. File Name:SGA60E-SPEC
AC-DC High Reliability Slim Wall-mounted Adaptor SGA60E series Ⅵ Ⅴ Ⅱ Ⅱ { ψ. ψ File Name:SGA60E-SPEC 2015-09-15 AC-DC High Reliability Slim Wall-mounted Adaptor SGA60E series SPECIFICATION ORDER NO. SGA60E05-P1J
Current Sensing Chip Resistor
Features -3 atts power rating in 1 att size, 1225 package -Low CR of ±100 PPM/ C -Resistance values from 1m to 1 ohm -High purity alumina substrate for high power dissipation -Long side terminations with
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
IDPV-45 series. 45W PWM Output LED Driver. File Name:IDPV-45-SPEC S&E
IDPV5 series S&E ~ A File Name:IDPV5SPEC 0805 IDPV5 series SPECIFICATION MODEL OUTPUT INPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS. Characteristics. Leakage Current(MAX) I=Leakage Current(µA) C=Nominal Capacitance(µF) V=Rated Voltage(V)
SERIES 5 C Long Life. Low impedance. (Rated Voltage 6.3~V.DC) FEATURES Load Life : 5 C 4~hours. Low impedance at khz with selected materials. SPECIFICATIONS Items Operating Temperature Range Rated Voltage
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
DC SERVO MOTORS. EC057B Series Salient Characteristics E E
US: + 267 933 25 Europe: +33 2 92 87 5 sia: +86 2 5763 58 Harleysville, P 438 DC SERO MOTORS 238XXXXNC Series BRUSHESS DC MOTORS The EC57B series brushless motor is a high torque model brushless motor
PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes
PD553L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features Excellent thermal stability Common source configuration P OUT =3W mith 17dB gain@5mhz/12.5v New leadless plastic package Esd protection
MAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet
Data Sheet Customer: Product: Size: Current Sensing Chip Resistor CS Series 0201/0402/0603/0805/1206/1010/2010/2512 1225/3720/7520 Issued Date: Edition : 12-Nov-10 REV.C5 Current Sensing Chip Resistor
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 20-Second Durations