NPN Silicon RF Transistor BFQ 74

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NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma.

1 NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically sealed ceramic package. HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package 1) (tape and reel) BFQ Q62702-F788 B E C E Cerec-X Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 16 V Collector-emitter voltage, VBE = 0 VCES 25 Collector-base voltage VCB0 25 Emitter-base voltage VEB0 2 Collector current IC 35 ma Peak collector current, f 10 MHz ICM 45 Base current IB 5 Total power dissipation, TS 115 C 3) Ptot 300 mw Junction temperature Tj 175 C Ambient temperature range TA Storage temperature range Tstg Thermal Resistance Junction - ambient 2) Rth JA 280 K/W Junction - soldering point 3) Rth JS 200 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

2 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 ma, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 15 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 ma, VCE = 10 V IC = 15 ma, VCE = 10 V Collector-emitter saturation voltage IC = 30 ma, IB = 3 ma Base-emitter voltage IC = 10 ma, VCE = 10 V V(BR)CE0 16 ICES 100 ICB0 IEB0 10 hfe VCEsat VBE 0.78 V µa na µa V

3 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 5 ma, VCE = 10 V, f = 200 MHz IC = 15 ma, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 3 ma, VCE = 10 V, f = 10 MHz, ZS = 75 Ω IC = 5 ma, VCE = 10 V, f = 800 MHz, ZS = Ω IC = 10 ma, VCE = 10 V, f = 2 GHz, ZS = ZSopt Power gain IC = 15 ma, VCE = 10 V, f = 2 GHz, Z0 = Ω IC = 15 ma, VCE = 10 V, f = 4 GHz, Z0 = Ω Transducer gain IC = 15 ma, VCE = 10 V, f = 2 GHz, Z0 = Ω Linear output voltage two-tone intermodulation test IC = 25 ma, VCE = 10 V, dim = 60 db, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = Ω Third order intercept point IC = 25 ma, VCE = 10 V, f = 800 MHz ft Gma 1 ) Gms 2 ) Ccb Cce 0.4 Cibo 1.35 Cobs 0.7 F I S21e I Vo1 = Vo2 160 IP3 27 GHz pf db mv dbm 1) S21e S12e (k k 2 1) 2) S21e S12e

4 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Transition frequency ft = f (IC) f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz

5 Common Emitter Noise Parameters f Fmin Gp(Fmin) Γopt RN N F Ω G p(fω) GHz db db MAG ANG Ω db db IC = 3 ma, VCE = 10 V, Z0 = Ω (ZS = 1 Ω) 1.2 IC = 10 ma, VCE = 10 V, Z0 = Ω (ZS = 75 Ω) Noise figure F = f (IC) VCE = 10 V, f = 10 MHz

6 Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 ma, VCE = 10 V, f = 800 MHz Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 800 MHz, ZLopt (G) Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 ma, VCE = 10 V, f = 2 GHz Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 2 GHz, ZLopt (G)

7 Common Emitter Power Gain Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 1 GHz, Z0 = Ω Power gain Gma, S21e 2 = f (IC) VCE = 10 V, f = 2 GHz, Z0 = Ω Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 4 GHz, Z0 = Ω

8 Power gain Gma, Gms, S21e 2 = f (f) IC = 2 ma, VCE = 10 V, Z0 = Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 5 ma, VCE = 10 V, Z0 = Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 10 ma, VCE = 10 V, Z0 = Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 25 ma, VCE = 10 V, Z0 = Ω

9 Common Emitter S Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 2 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f) IC = 2 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 2 ma, VCE = 10 V, Z0 = Ω

10 Common Emitter S Parameters (continued) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f) IC = 5 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 5 ma, VCE = 10 V, Z0 = Ω

11 Common Emitter S Parameters (continued) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f) IC = 10 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 10 ma, VCE = 10 V, Z0 = Ω

12 Common Emitter S Parameters (continued) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 15 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f) IC = 15 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 15 ma, VCE = 10 V, Z0 = Ω

13 Common Emitter S Parameters (continued) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 20 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f) IC = 20 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 20 ma, VCE = 10 V, Z0 = Ω

14 Common Emitter S Parameters (continued) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 25 ma, VCE = 10 V, Z0 = Ω S11, S22 = f (f), Z-plane IC = 25 ma, VCE = 10 V, Z0 = Ω S12, S21 = f (f) IC = 25 ma, VCE = 10 V, Z0 = Ω

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