GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns

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1 GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to 1 C V V CGR = 25 C to 1 C, R GE = 1MΩ V V GES Continuous ± V V GEM Transient ± V 1 = 1 C (chip capability) 42 A M = 25 C, 1ms 2 A I A = 25 C 42 A E AS = 25 C 2 mj SSOA V GE = 15V, T VJ = 125 C, R G = Ω M = 84 A (RBSOA) Clamped inductive V P C = 25 C 223 W G E TO-247 (IXGH) G C E TO-2 (IXGP) C (TAB) C (TAB) C M 1 C T stg C T L Maximum lead temperature for soldering C T SOLD mm (.62 in.) from case for s 2 C M d Mounting torque (TO-247)(TO-2) 1.13/ Nm/lb.in. Weight TO g TO g TO-2 3. g Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. BV CES = 2μA, V GE = V V V GE(th) = 2μA, V CE = V GE V ES V CE = V CES 25 μa V GE = V = 125 C μa I GES V CE = V, V GE = ±V ± na V CE(sat) = 42A, V GE = 15V, Note V = 125 C 1.54 V G C E C (TAB) G = Gate C = Collector E = Emitter TAB = Collector Features Optimized for low switching losses Square RBSOA High current handling capability International standard packages Advantages High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 8 IXYS CORPORATION, All rights reserved DS99885B(7/8)

2 Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. g fs =.5 1, V CE = V, Note 1 33 S C ies 21 pf C oes V CE = 25V, V GE = V, f = 1MHz 218 pf C res pf Q g 76 nc Q ge = 1, V GE = 15V, V CE =.5 V CES 15 nc Q gc 26 nc IXGA42NC3 IXGH42NC3 IXGP42NC3 TO-247 AD Outline P 21 ns t ri Inductive Load, = 25 C 23 ns E on =.5 1, V GE = 15V.12 mj t d(off) V CE = V, R G = Ω ns t fi 65 1 ns E off mj 21 ns t ri Inductive Load, = 125 C 22 ns E on =.5 1, V GE = 15V.21 mj t d(off) V CE = V, R G = Ω 127 ns t fi 2 ns E off. mj R thjc.56 C/W R thck TO-2. C/W TO C/W Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e L L P Q R S 6.15 BSC 242 BSC TO-2 (IXGP) Outline e Note1. Pulse test, t μs; duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537

3 IXGA42NC3 IXGH42NC3 IXGP42NC3 9 7 Fig. 1. Output 25ºC 5V V 11V 9V 7V Fig. 2. Extended Output 25ºC V V V V V Fig. 3. Output 125ºC V 11V 9V 7V 5V VCE(sat) - Normalized Fig. 4. Dependence of V CE(sat) on Junction Temperature = 21A Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 42A 21A V GE - Volts = 25ºC Fig. 6. Input Admittance = 125ºC 25ºC - ºC V GE - Volts 8 IXYS CORPORATION, All rights reserved

4 IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 7. Transconductance Fig. 8. Gate Charge = - ºC 25ºC V CE = 1V I G = ma g f s - Siemens ºC VGE - Volts Amperes 7 Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, 9 f = 1 MHz C ies Capacitance - PicoFarads 1, C oes C res 7 = 125ºC R G = Ω dv / dt < V / ns Fig. 11. Maximum Transient Thermal Impedance 1. Z(th)JC - ºC / W Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.

5 IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Eoff - MilliJoules E off E on = 125ºC, V CE = V E on - MilliJoules Eoff - MilliJoules E off E on R G = Ω, V CE = V = 125ºC E on - MilliJoules = 25ºC R G - Ohms Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eoff - MilliJoules E off E on R G = Ω, V CE = V E on - MilliJoules t f t f t d(off) = 125ºC, V CE = V t d(off) Degrees Centigrade R G - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f t f t d(off) R G = Ω, VGE = 15V V CE = V = 25ºC = 125ºC t d(off) t f t f t d(off) R G = Ω, V CE = V t d(off) 7 - Amperes Degrees Centigrade 8 IXYS CORPORATION, All rights reserved

6 IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 1 32 t r t r = 125ºC, V CE = V 9 7 t r 1 t r R G = Ω, 25ºC < < 125ºC V CE = V R G - Ohms Amperes Fig.. Inductive Turn-on Switching Times vs. Junction Temperature 32 9 t r 7 t r R G = Ω, V CE = V Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_42NC3(55)8-5-8-A