SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
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1 FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = V, 7 ma, GHz SE = V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES DESCRIPTION SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high ft make it an excellent choice for portable wireless applications up to. The NE686 die is available in six different low cost plastic surface mount package styles. ELECTRICAL CHARACTERISTICS (TA = C) Notes:. Precaution: Devices are ESD sensitive. Use proper handling procedures.. Electronic Industrial Association of Japan.. Pulsed measurement, PW μs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the terminal capacitance bridge. 8 (SOT STYLE) (SOT STYLE) 9 (SOT STYLE) SILICON TRANSISTOR NE686 SERIES 9 ( PIN ULTRA SUPER MINI MOLD) (SOT STYLE) 9R (SOT R STYLE) PART NUMBER NE6868 NE6869 NE686 NE686 NE6869/9R EIAJ REGISTERED NUMBER SC8 SC8 SC79 SC77 SC78/78R PACKAGE OUTLINE 8 9 9/9R SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = V, IC = 7 ma, f =. GHz GHz ft Gain Bandwidth Product at VCE = V, IC = ma, f =. GHz GHz NFMIN Minimum Noise Figure at VCE = V, IC = ma, f =. GHz db NFMIN Minimum Noise Figure at VCE = V, IC = ma, f =. GHz db Insertion Power Gain at Se VCE = V, IC =7 ma, f =. GHz db Se Insertion Power Gain at VCE = V, IC = ma, f =. GHz db hfe Forward Current Gain at VCE = V, IC = 7 ma ICBO Collector Cutoff Current at VCB = V, IE = ma na IEBO Emitter Cutoff Current at VEB = V, IC = ma na CRE Feedback Capacitance at VCB = V, IE = ma, f = MHz pf PT Total Power Dissipation mw RTH(J-A) Thermal Resistance (Junction to Ambient) C/W RTH(J-C) Thermal Resistance(Junction to Case) C/W
2 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current ma TJ Operating Junction Temperature C TSTG Storage Temperature C -6 to + Notes:. Operation in excess of any one of these parameters may result in permanent damage. NE6868 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/ VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma NE6869 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/ VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma
3 NE686 Series TYPICAL PERFORMANCE CURVES (TA = ) Total Power Dissipation, PT (mw) Total Power Dissipation, PT (mw) NE6868, NE686 D.C. POWER DERATING CURVE FREE AIR Ambient Temperature, TA ( C) NE686, NE6869 D.C. POWER DERATING CURVE FREE AIR Ambient Temperature, TA ( C) Total Power Dissipation, PT (mw) NE6869 D.C. POWER DERATING CURVE FREE AIR Ambient Temperature, TA ( C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE...6 µa 8 µa 6 µa µa µa µa 8 µa 6 µa µa IB = µa Collector to Emitter Voltage, VCE (V)
4 TYPICAL PERFORMANCE CURVES (TA = C) Insertion Power Gain Se (db) DC Current Gain, hfe 8 6 D.C. CURRENT GAIN vs. COLLECTOR CURRENT VCE = V VCE = V f = GHz COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V NE6868 INSERTION GAIN vs. COLLECTOR CURRENT V VCE = V Noise Figure, NF (db) Gain Bandwidth Product, ft (GHz) Feed-back Capacitance, CRE (pf) NE6868 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = GHz V VCE = V.. NE686 NOISE FIGURE vs. COLLECTOR CURRENT f = GHz VCE = V VCE = V NE686 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = MHz.. Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V)
5 TYPICAL SCATTERING PARAMETERS (TA = C) NE6868 VCE =. V, IC =. ma NE686 SERIES FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma Note:. Gain Calculation: MAG = S S S S. GHz S S -. GHz - -. (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) 8 S. GHz 9 S GHz S. S 7. 7
6 TYPICAL SCATTERING PARAMETERS (TA = C) NE6869 VCE =. V, IC =. ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC =. ma VCE =. V, IC =. ma See note on previous page S S. GHz S S -. GHz - VCE =. V, IC =. ma Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) 8 S. GHz 9 S. GHz S.. S
7 TYPICAL SCATTERING PARAMETERS (TA = C) S S. GHz S S -. GHz - -. NE686 VCE =. V, IC =. ma GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC =. ma VCE =. V, IC =. ma Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) VCE =. V, IC =. ma See note on next page 8 S. GHz 9 S. GHz S S.... FREQUENCY S S S S K MAG
8 TYPICAL SCATTERING PARAMETERS (TA = C) NE686 VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma VCE =. V, IC =. ma Note:. Gain Calculation:.6.8. S S. GHz S - S. GHz MAG = S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain K - ) Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) 8 S. GHz S. GHz S S....
9 OUTLINE DIMENSIONS (Units in mm).9 ±..6 ± ±. LEAD CONNECTIONS. Emitter. Base. Collector. ±...9 ±. LEAD CONNECTIONS. Emitter. Base. Collector PACKAGE OUTLINE 8. LEAD CONNECTIONS. Collector. Emitter. Base. Emitter (SOT-) PACKAGE OUTLINE 9.. ±.. ±.. ± ±. ±.. +. LEAD ONLY to.. +. PACKAGE OUTLINE (SOT-). ±.. ±. +.. (LEADS,, ) to.. +. MARKING.. +. (ALL LEADS) to.. +. OUTLINE 8 OUTLINE 9 OUTLINE
10 OUTLINE DIMENSIONS (Units in mm).9 ± to..9 ±..9.9 ±. PACKAGE OUTLINE (SOT-) to.. +. (ALL LEADS) PACKAGE OUTLINE 9 (SOT-) PACKAGE OUTLINE 9R (SOT-) to to. +.. (LEADS,, ) (LEADS,, ) LEAD CONNECTIONS. Emitter. Base. Collector LEAD CONNECTIONS. Collector. Emitter. Base. Emitter LEAD CONNECTIONS. Emitter. Collector. Emitter. Base OUTLINE...9 OUTLINE 9.9 OUTLINE 9R NE686 SERIES...9
11 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE6868-T-A Tape & Reel NE6869-T-A Tape & Reel NE686-T Tape & Reel NE686-T Tape & Reel Note: NE6869-T Tape & Reel. Lead material: Cu NE6869R-T Tape & Reel Lead plating: PbSn EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-87 (8) 988- Telex -69 FAX (8) DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: // -
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2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
DPAK For Surface Mount Applications
MJD31C and MJD32C are Preferred Devices DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction
TS-HA/HB Series 105 C, 3000 hours Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction RoHS Compliant Rated Working Voltage: Operating Temperature:
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
Precision Metal Film Fixed Resistor Axial Leaded
Features EIA standard colour-coding Non-Flame type available Low noise and voltage coefficient Low temperature coefficient range Wide precision range in small package Too low or too high ohmic value can
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
NTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x
High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz
Symbol. Parameter Value Unit. IPP See Next Table A IFSM
5W Transient Suppressor.5KE-HF Series Stand-off : 6.8 ~ 6V Power Dissipation: 5 Watts RoHS Device Halogen Free Features -Glass passivated chip. -Low leakage. -5W peak pulse power capability with a /μs
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
GENERAL PURPOSE TRANSFORMERS 2 Watt Pulse, Electrostatically Shielded, 500 mw Pulse, RF Pulse, and Control Transformers
Watt Pulse, Electrostatically Shielded, 00 mw Pulse, RF Pulse, and Control Transformers Wide range of inductors and turns ratios Suitable for a variety of applications High flux density capability Available
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter 03
High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Current Sense Metal Strip Resistors (CSMS Series)
Features: Range: 1mΩ to 100mΩ Low TCR as low as 75PPM High power rating Custom Values available RoHS Compliant and Halogen Free Operating Temperature: -55 C to +170 C Part Number Structure CSMS 0805 -
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
Unshielded Power Inductor / PI Series
.Features: 1. Excellent solderability and high heat resistance. 2. Excellent terminal strength construction. 3. Packed in embossed carrier tape and can be used by automatic mounting machine..applications:
POWER OVER ETHERNET (PoE) MAGNETICS
RoHS-5 peak reflow temperature rating 35 C RoHS-6 peak reflow temperature rating 45 C IEEE 80.3af/ANSI X3.63 compliant performance Designed for IP phone or switch applications Electrical Specifications
Bluetooth / WLAN / WiFi Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25/6.25 mm. Pulse Part Number W3008, W3008C
W8 Datasheet version.7. ceramic antenna. (/) Ground cleared under antenna, clearance area 4. x 4.5/6.5 mm. Pulse Part Number W8, W8C Features - Omni directional radiation - Low profile - Compact size W
SMD Power chokes- SPD Series SPD series chokes For High Current Use
SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to
Aluminum Capacitors C, Tubular, Radial Lead
Aluminum Capacitors + 105 C, Tubular, Radial Lead FEATURES Wide temperature range Radial design in two and three lead configuration Ideal SMPS output filter PERFORMANCE CHARACTERISTICS Operating Temperature:
+85 C General Purpose Miniature Aluminum Capacitors
+85 C General Purpose Miniature Aluminum Capacitors Features- Increased CV Efficiency Non Polar Design Available (Special Order) General Specifications- Operating Temperature: -40 to +85 C Voltage Range: