AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM

Σχετικά έγγραφα
AT Low Current, High Performance NPN Silicon Bipolar Transistor

Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

NPN Silicon RF Transistor BFQ 74

PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER

3 V, 900 MHz Si MMIC AMPLIFIER

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER

4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625

Features. Applications V CC = 5V. Rbias

NPN SILICON GENERAL PURPOSE TRANSISTOR

4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086

High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System

Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION

Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x

PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)

NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION

Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter 03

SAW FILTER - RF RF SAW FILTER

The following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135

VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA

MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-

Ceramic PTC Thermistor Overload Protection

Polymer PTC Resettable Fuse: KRG Series

Multilayer Ceramic Chip Capacitors

Multilayer Ceramic Chip Capacitors

XKT. Metal Oxide Varistor FEATURES

NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC

! " # $ &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 #! - (#* 2 3( 4* 2 (* 2 5!! 3 ( * (7 4* 2 #8 (# * 9 : (* 9

MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

NPN SILICON HIGH FREQUENCY TRANSISTOR

IXBH42N170 IXBT42N170

DATA SHEET Surface mount NTC thermistors. BCcomponents

WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)

GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns

NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES

TSV. Suntan ZINC OXIDE VARISTOR. Operating Temperature Range: -40 ~+85 DIMENSION. T Thickness(max.) L:16mm min

0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data

YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.

Transient Voltage Suppressor

IXBK64N250 IXBX64N250

Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG

IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)

High Current Chip Ferrite Bead MHC Series


Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W

VAR Series Zinc Oxide Varistor

Multilayer Chip Inductor

SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table

SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE:

Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition

HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)

APPLICATIONS TECHNOLOGY. Leaded Discs N.03 N.06 N.09

NTC thermistors for temperature measurement

± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:

Data Sheet. HSMW-Cxxx White ChipLEDs HSMW-C191, HSMW-130, HSMW-265, HSMW-197, HSMW-120. Description. Features. Applications

HiPerFAST TM IGBT with Diode

1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A

+85 C Snap-Mount Aluminum Electrolytic Capacitors. High Voltage Lead free Leads Rugged Design. -40 C to +85 C

Thin Film Chip Resistors

Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206

Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction

WLCW1005 SMD Wire Wound Ceramic Chip Inductors

SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)

Thermistor (NTC /PTC)

2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%

Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of

MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL

PI5A121C SPST Wide Bandwidth Analog Switch

MMCX SERIES Microminiature Coaxial Connectors

Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of

Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc

PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes

ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013

Anti-Corrosive Thin Film Precision Chip Resistor (PR Series)

SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)

Polymer PTC Resettable Fuse: KMC Series

Current Sense Metal Strip Resistors (CSMS Series)

No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor

Metal Oxide Varistors (MOV) Data Sheet

Polymer PTC Resettable Fuse:KMC Series

ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012

CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS

Wire Wound Chip Ferrite Inductor SDWL-FW Series Operating Temp. : -40 ~+85 R27. External Dimensions 2012 [0805] 2520 [1008] 3216 [1206] 3225 [1210]

RSDW08 & RDDW08 series

SMC SERIES Subminiature Coaxial Connectors

MS SERIES MS DESK TOP ENCLOSURE APPLICATION EXAMPLE FEATURE. Measuring instruments. Power supply equipments

500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

B37631 K K 0 60

LR(-A) Series Metal Alloy Low-Resistance Resistor

First Sensor Quad APD Data Sheet Part Description QA TO Order #

INPAQ Global RF/Component Solutions

PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T

Transcript:

AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM

Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum θ jc = 37 C/W V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V. I C Collector Current ma 32 P T Power Dissipation [2,3,4] mw T j Junction Temperature C T STG Storage Temperature C -6 to Electrical Specifications, T A = C Symbol Parameters and Test Conditions Units Min. Typ. Max µ µ Ω Ω W = 1 L = 4 TEST CIRCUIT BOARD MATERIAL =.47 GETEK (ε = 4.3) W = 2 L = 6 W = 1 L = 1 DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. Page 2 21.4., 7:6 PM

Characterization Information, T A = C Symbol Parameters and Test Conditions Units Typ. Typical Performance, T A = C 2. 2. NOISE FIGURE (db) 1. 1.. 2.7V/2 ma 2.7V/ ma 2.7V/2 ma.9 1.8 2.4 Figure 2. Minimum Noise Figure vs. Frequency and Current at 2.7 V. Ga (db). 1.. 2.7V/2 ma 2.7V/ ma 2.7V/2 ma.9 1.8 2.4 Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at 2.7 V. P1 db (dbm) 14 13 12 11 1.9 1.8 2 Figure 4. Power at 1 db Gain Compression vs. Frequency at 2.7 and 2 ma. 18 G1 db (db) 12 9 6 3.9 1.8 2.4 Figure. 1 db Compressed Gain vs. Frequency at 2.7 V and 2 ma. IP 3 (dbm) 2 1 2 ma ma 1 ma 2 ma. 1. 1. 2. 2. Figure 6. Third Order Intercept vs. Frequency and Bias at 2.7 V, with Optimal Tuning. Page 3 21.4., 7:6 PM

AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = 1 V, I C = 1 m AT-3263 Typical Noise Parameters Common Emitter, Zo = Ω, VCE = 1 V, IC = 1 ma GHz db db Mag. Ang. R n / 2 1 -.1 1.1 2.1 3.1 4.1. MS Figure 7. Gain vs. Frequency at 1 V 1 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = 2.7 V, I C = 2 m 3 AT-3263 Typical Noise Parameters Common Emitter, Z o = Ω, V CE = 2.7 V, I C = 2 ma GHz db db Mag. Ang. R n / 2 1.1 1.1 2.1 3.1 4.1. Figure 8. Gain vs. Frequency at 2.7 2 ma. Page 4 21.4., 7:6 PM

AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = 2.7 V, I C = ma AT-3263 Typical Noise Parameters Common Emitter, Z o = Ω, V CE = 2.7 V, I C = ma GHz db db Mag. Ang. R n / 3 3 2 1.1 1.1 2.1 3.1 4.1.1 Figure 9. Gain vs. Frequency at 2.7 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = 2.7 V, I C = 2 ma AT-3263 Typical Noise Parameters Common Emitter, Zo = Ω, VCE = 2.7 V, IC = 2 ma 3 2 GHz db db Mag. Ang. R n / 1 4 3.1 1.1 2.1 3.1 4.1.1 Figure 1. Gain vs. Frequency at 2.7 2 ma. Page 21.4., 7:6 PM

AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = V, I C = 2 m 3 AT-3263 Typical Noise Parameters Common Emitter, Zo = Ω, VCE = V, IC = 2 ma GHz db db Mag. Ang. R n / 2 1.1 1.1 2.1 3.1 4.1. Figure 11. Gain vs. Frequency at 2 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = Ω, V CE = V, I C = 2 ma 4 AT-3263 Typical Noise Parameters Common Emitter, Zo = Ω, VCE = V, IC = 2 ma GHz db db Mag. Ang. R n / 3 3 2 1.1 1.1 2.1 3.1 4.1 Figure 12. Gain vs. Frequency at 2 ma. Page 6 21.4., 7:7 PM

Package Dimensions Outline 63 (SOT-363/SC-7) 2.2 (.87) 2. (.79).1 (.4). (.) 1.3 (.1) REF. I I Y 2.2 (.87) 1.8 (.71) PACKAGE MARKING CODE & DATE CODE 1.3 (.3) 1. (.4).6 BSC (.26).3 REF..4 (.17) TYP. Package Characteristic PC Board Footprints SOT-363.26. (.1). (.6) 1. (.39).8 (.31) 1.3 (.12).1 (.4).2 (.8).1 (.4).7 DIMENSIONS ARE IN MILLIMETERS (INCHES).3 Part Number Ordering Information Part Number No. of Devices Container AT-3263-TR1 3 7" Reel AT-3263-BLK 1 antistatic bag.16 Tape Dimensions and Product Orientation Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE 8 mm ### ### ### ### USER FEED DIRECTION COVER TAPE Page 7 21.4., 7:7 PM

Tape Dimensions and Product Orientation, Continued For Outline 63 (SC-7 6 Leads) P D P 2 P T t (COVER TAPE THICKNESS) E C F W MAX. B D 1 t 1 (CARRIER TAPE THICKNESS) K 8 MAX. A DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P D 1 2.24 ±.1 2.34 ±.1 1.22 ±.1 4. ±.1 1. +..88 ±.4.92 ±.4.48 ±.4.7 ±.4.39 +.1 PERFORATION DIAMETER PITCH POSITION D P E 1. ±. 4. ±.1 1.7 ±.1.61 ±.2.7 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t 1 8. ±.3. ±.13.3 ±.12.1 ±. COVER TAPE WIDTH TAPE THICKNESS C.4 ±.1 T t.62 ±.1. ±.4. ±.4 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3. ±..138 ±.2 CAVITY TO PERFORATION (LENGTH DIRECTION) P 2 2. ±..79 ±.2 Page 8 21.4., 7:7 PM

Page 9 21.4., 7:7 PM