NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)

Σχετικά έγγραφα
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION

The following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135

NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

NPN SILICON GENERAL PURPOSE TRANSISTOR

AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM

PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NPN Silicon RF Transistor BFQ 74

3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER

3 V, 900 MHz Si MMIC AMPLIFIER

3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER

4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043

4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086

Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.

Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x

Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter 03

AT Low Current, High Performance NPN Silicon Bipolar Transistor

Transient Voltage Suppressor

VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA

High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System

MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

Metal Oxide Varistors (MOV) Data Sheet

MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-

First Sensor Quad APD Data Sheet Part Description QA TO Order #

YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.

High Current Chip Ferrite Bead MHC Series

MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

SILICON TRANSISTOR NE68519 / 2SC5010

B37631 K K 0 60

NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC

IXBH42N170 IXBT42N170

Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W

Multilayer Ceramic Chip Capacitors

Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition

Multilayer Ceramic Chip Capacitors

LR Series Metal Alloy Low-Resistance Resistor

SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table

PI5A121C SPST Wide Bandwidth Analog Switch

Polymer PTC Resettable Fuse: KRG Series

NPI Unshielded Power Inductors

No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type

MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)

High Frequency Ceramic Inductors TLNMH0603P Series

LR(-A) Series Metal Alloy Low-Resistance Resistor

GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns

DATA SHEET Surface mount NTC thermistors. BCcomponents

1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A

IXBK64N250 IXBX64N250

SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)

Polymer PTC Resettable Fuse: KMC Series

LR Series Metal Alloy Low-Resistance Resistor

0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data

Thin Film Chip Resistors

Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier

C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]

Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH

YJM-L Series Chip Varistor

High Frequency Chip Inductor / CF TYPE

Multilayer Chip Capacitors C0G/NP0/CH

HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)

Polymer PTC Resettable Fuse:KMC Series

SAW FILTER - RF RF SAW FILTER

Ceramic PTC Thermistor Overload Protection

Surface Mount Multilayer Chip Capacitors for Commodity Solutions

FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS

Surface Mount Aluminum Electrolytic Capacitors

HiPerFAST TM IGBT with Diode

Multilayer Chip Inductor

± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:

Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of

2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%

SMD Power chokes- SPD Series SPD series chokes For High Current Use

PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T

MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL

CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK

CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS

500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction

SMD Transient Voltage Suppressors

Features. Applications V CC = 5V. Rbias

Symbol. Parameter Value Unit. IPP See Next Table A IFSM

Type 947D Polypropylene, High Energy Density, DC Link Capacitors

NTC Thermistor:TSM type

RF series Ultra High Q & Low ESR capacitor series

THICK FILM LEAD FREE CHIP RESISTORS

NPIS Shielded Power Inductors

Power Inductor LVS Series

Operating Temperature Range ( C) ±1% (F) ± ~ 1M E-24 NRC /20 (0.05) W 25V 50V ±5% (J) Resistance Tolerance (Code)

WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)

Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15

Thin Film Chip Inductor

Ceramic PTC Thermistor Overload Protection

Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης. Επανάληψη μέρος 2 ο. Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών

SMC SERIES Subminiature Coaxial Connectors

Transcript:

FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE68 die is also available in six different low cost plastic surface mount package styles. NE68's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. NF min (db) Minimum Noise Figure, 3... NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY MSG VCE = 3 V, IC = 5 ma NF MAG.5.. 3. Frequency, f (GHz) NPN SILICON HIGH FREQUENCY TRANSISTOR GA Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (db) SILICON TRANSISTOR NE68 SERIES B (CHIP) 35 (MICRO-X) 8 (SOT 343 STYLE) E 3 (SOT 33 STYLE) 9 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 3 STYLE) 39 (SOT 43 STYLE) 39R (SOT 43R STYLE) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 8, 5

ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE68 NE688 NE689 NE683 EIAJ REGISTERED NUMBER SC5 SC57 SC47 PACKAGE OUTLINE (CHIP) 8 9 3 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 8 V, IC = ma GHz 9. 9. VCE = 3 V, IC = 7 ma GHz 7. 7. NF Noise Figure at VCE = 8 V, IC = 7 ma, f = GHz db..5.4.5 f = GHz db.6.3.8.6 GNF Associated Gain at VCE = 8 V, IC = 7 ma, f = GHz db 4 4 3.5 f = GHz db 9 SE Insertion Power Gain at VCE = 8 V, IC = ma, f = GHz db 7 3 5 4 3 f = GHz db 9 9 8 7.5 hfe Forward Current Gain at VCE = 8 V, IC = ma 5 5 5 5 VCE = 3 V, IC = 7 ma 8 6 4 4 ICBO Collector Cutoff Current at VCB = V, IE = ma µa.... IEBO Emitter Cutoff Current at VEB = V, IC = ma µa.... CRE 3 Feedback Capacitance at VCB = 3 V, IE = ma, f = MHz pf.45.9.45.9 VCB = V, IE = ma, f = MHz pf..7.5.8 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 8 833 833 PT Total Power Dissipation mw 6 5 5 ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE6833 NE6835 NE6839/39R EIAJ REGISTERED NUMBER SC3583 SC364 SC494 PACKAGE OUTLINE 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 8 V, IC = ma GHz 9. 9. 9. VCE = 3 V, IC = 7 ma GHz NF Noise Figure at VCE = 8 V, IC = 7 ma, f = GHz db.. f = GHz db.6.3 GNF Associated Gain at VCE = 8 V, IC = 7 ma, f = GHz db 3 3.5 f = GHz db SE Insertion Power Gain at VCE = 8 V, IC = ma, f = GHz db.5 5 f = GHz db 7 9 8.5 hfe Forward Current Gain at VCE= 8 V, IC = ma VCE = 3 V, IC = 7 ma 5 5 5 5 5 ICBO Collector Cutoff Current at VCB = V, IE = ma µa... IEBO Emitter Cutoff Current at VEB = V, IC = ma µa... CRE 3 Feedback Capacitance at VCB = V, IE = ma, f = MHz pf.35.9..7.5.8 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 65 59 65 PT Total Power Dissipation mw 95 Notes:. Electronic Industrial Association of Japan.. Pulsed (PW 35 ms, duty cycle %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V.5 IC Collector Current ma 65 TJ Operating Junction Temperature C 5 TSTG Storage Temperature C -55 to +5 3 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. TJ for NE6835 and NE68 is C. 3. Maximum storage temperature for the NE6835 is -65 to +5 C. NE689 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma 5.4 9.6.73 4.7 8.67 6.95.74 7..8 6..7 9.78 VCE =.5 V, IC = ma 5.97 3.86.66 43.46 8.9 9..59 48.35.3.9.56 89.3 5.7 7.99.5 3.6 VCE =.5 V, IC = 3 ma 5.9 7.9.49 39.8 8. 4.3.4 68.7..78.38 87.4 5.4.3.39 34.8.8 8.4.36 65. VCE = 3 V, IC = 5 ma 5. 9..37 43. 8. 5.57.3 7.5.9 3.9.3 89.3 5.4.5.33 39.9.7 9.8.3 66. 5.5 7.6.36-63.3 VCE = 8 V, IC = 7 ma 5..3.36 39. 8. 6.8.8 64.6.3 5..8 8.4 5.5.35.8 3..77..8 58. 5. 8.85.33-66.4 3.4 7.86.44-4.6 NE68 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = 8 V, IC = 7 ma 5.3 6.4. 9..45.54. 48.. 4.4. 78.5 4 3.5 7.76.4-5.85 NE683 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma 5.48.3.74 43.35 8.9.5.7 79.9.5 9..69 99.6 5.7 4.46.66 6.38 VCE =.5 V, IC = ma 5. 4.69.65 45.4 8.6.73.6 8.3.4.9.56 99.4 5.8 7.4.53 3.7. 6.4.47 66. 5.75 4.89.49-66.8 VCE =.5 V, IC = 3 ma 5. 7.8.47 44.5 8.6 4.35.44 83..6.69.43.7 5.46 9.5.39 3..8 7.7.35 77. 5.5 6.3.35-77.9 VCE = 8 V, IC = 7mA 5.3.34.9 5.7.4 3.96.5 84.8.8 8.56.5 55.6 3.5 5.64.48-67. 4 3.6 4.5.67-35. NE6835 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = 8 V, IC = 7 ma. 7.33.8 7..6 3.6.37 6.5 4 3.4 9.5.5-39.7

NE6833 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 NE6839 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma VCE =.5 V, IC =.3 ma 5..45.75 47.5 5. 4..78 47.8 8.69 7.7.74 7.97 8.45 8.4.75 7.84.95 5.96.68 88.7.67 8.37.68 95.56 5.5 3..63.34 VCE =.5 V, IC = ma VCE =.5 V, IC =. ma 5.9 5.7.63 44.43 5.9 4.5.68 47.4 8..3.56 7.6 8..57.63 7.34.6.66.53 98..35 9.9.57 87.3 5.7 8.85.49 45. 5.7 6.53.5.7. 7..57 78.7. 5.53.44 68. VCE =.5 V, IC = 3 ma VCE =.5 V, IC = 3 ma 5.88 8..45 44.5 5.86 6.37.54 47.4 8. 4.6.39 73.9 8..4.5 67..8 3.9.37 99.6.8.7.46 86.8 5.3.54.35 5.9 5.5 8.6.36 8..8 8.6.43-77.7.4 6.99.35 7. VCE = 8 V, IC = 7 ma 5.5.5.6 4.7.5 5.6.6 33.4 5.4.49. 76.9.6.48.3-65.4 3.5 8..53-3.48 4 3. 6.8.7 -.9 TYPICAL PERFORMANCE CURVES (TA = 5 C) Insertion Gain, SE (db) Maximum Available Gain, MAG (db) 3 5 5 5 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY NE6833 SE MAG Frequency, f (GHz) VCE = 8 V IC = ma SE NE68 MAG NE6835...3.5.7 3 5 7 Insertion Gain, SE (db) 8 6 4 VCE = 8 V NE68 & NE6835 INSERTION GAIN vs. COLLECTOR CURRENT f = GHz f = 3 GHz f = 4 GHz 3 5 7 3 5 Collector Current, IC (ma)

TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) DC Forward Current Gain, hfe Noise Figure, NF (db) 4 3 5 3 7 5 3 3..5..5..5 DC POWER DERATING CURVES NE6833 NE6835 5 5 Ambient Temperature, TA ( C) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, IC (ma) VCE = 8 V 3 5 7 3 5 NE6833 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 8 V f = GHz.5 3 5 7 3 5 Collector Current, IC (ma) Collector Current, IC (ma) Collector to Base Capacitance, COB (pf) Gain Bandwidth Product, ft (GHz) Noise Figure, NF (db) 5. 3....7.5.3.. 5 3 7 5 3 3..5..5. COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NE6833 NE6835 3 5 7 3 5 Collector to Base Voltage, VCB (V) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 8 V 3 5 7 3 5 Collector Current, IC (ma) NE68 & NE6835 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 8 V f = GHz 3 5 7 3 5

TYPICAL COMMON EMITTER SCATTERING PARAMETERS -j5 -j Coordinates in Ohms Frequency in GHz - S 5-6 NE68 -j5 (VCE = 8 V, IC = 7 ma) -9 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db).87 -.8 9.53 63.9. 88.3.964-7..3 3..89-49.5 7.98 5.. 65.5.894-6.8.3 9. 5.74 -..63 3..38 4..69-7.4.8 5..7-39. 7.498.5.47 36.7.536-9..47. 5.689-56.6 5.8 9.4.49 33..483-8.6.7..686-67. 3.959 8..53 35..46-9..88 8.7 3.687 79.8.687 69.7.6 45.9.447-33.6. 4.4 4.693 7..48 59..7 48.7.449-4.6..8 5.699 66.6.66 49.8.8 53..454-48..7. 6.78 6..43 4..96 57..473-57..5 9.4 7.77 57..5 3.7.6 56.6.49-66.8.99.3 8.7 5.7.5 3.3.5 56.9.59-76..97 9.5 9.75 45.5.989 4..46 55.9.549-86.4.83 8.3.76 37.6.868 5.9.69 54.9.58-96..74 7..74 3..773 -..79 5.9.6-4.8.7 6.4.7 3.6.673-9.7.9 49..663-4..69 5.4 VCE = 8 V, IC = ma.665-47. 38.3 54.. 9..885-5.. 35.4.664-85.3 3.89 35.9.7 7.3.753-6.. 3.6 5.663-35.8 6.975 8.9.5 45.4.54-3.8.45 8.3.663-6. 9.66 93..8 49.5.44-7..8 5. 5.667-7.7 6.3 84.9.36 49.6.377-6.3.97.3.669-78.4 4.67 78.3.4 53..369-6.6. 8.5 3.676 7.7 3. 67.9.54 59..36-3.6.5 4.6 4.686 67.3.36 58.6.7 6.6.36-38.5..5 5.693 6.6.93 5..86 63.5.37-45.8.9.8 6.75 59..643 4..3 65..386-55.5.8.3 7.79 54.5.433 33.3.3 63..45-65..94.7 8.77 49.4.66 5.4.33 6.6.433-74..9 9.8 9.76 43.5.34 6.7.53 6.4.464-84.5.84 8.7.733 35.9. 8.4.7 57.3.5-94.4.76 7.7.73 9.4.897.5.85 53.9.546-3..7 6.9.78..787-7..97 5.8.587 -.6.7 6. S-Parameters include bond wires. BASE: Total wire (s), per bond pad,." (39 µm) long each wire. COLLECTOR: Total wire (s), per bond pad,.8" (3 µm) long each wire. EMITTER: Total wire (s), per side,.94" (494 µm) long each wire. WIRE:.7" (7.7 µm) dia., gold. Note:. Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S j j5 S 7 GHz -j MAG = Maximum Available Gain MSG = Maximum Stable Gain j5 S 7 GHz 5 5 j S. GHz S. GHz 8 S 5-5 S. GHz 9 5 S S 6 S 7 GHz S...3.4. GHz S 7 GHz 3.5-3

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j j5 Coordinates in Ohms -j5 Frequency in GHz -9 NE689 (VCE =.5 V, IC = 3 ma) VCE =.5 V, IC =.3 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) 5.995-6..83 74..7 88..997 -.. 8.8.99 -.9.8 7.4.7 8.9.995-4.5.6 6..98-3.5.38 58.4.5 74..99-9.3. 3. 3.967-35.3. 49..78 65..989-4.3.5. 4.95-46..985 39..96 58.4.979-8... 5.99-57..95 3..4 5.4.96 -.5.3 9. 6.95-67..936..3 44.5.948-6.4.3 8.6 7.89-77..888.7.44 38.5.937-3..33 7.9 8.874-86..869 5..53 3.7.98-33.9.36 7.5 9.853-94.5.88 97..6 7.3.96-37..4 7..838 -.9.784 9.6.65.8.98-4.5.45 6.8 5.77-39..65 6..69.6.869-54.5.66 5.9.73-7.6.564 39..46 -.7.84-66.5.95 5.9 3.693 3..44 9..85 6..83-9..98.5 VCE =.5 V, IC =. ma 5.979-8.4 4.37 7.8.6 87.7.99 -.3.4 4.3.965-5.9 3.5 66.3.6 77.4.986-7.5..3.944-3. 3.384 55.6.49 7.9.97-3..9 8.4 3.95-44.6 3.34 45.3.69 6.3.949-9.4.5 6.7 4.877-57.8 3.69 34.8.9 54.9.98-4.6.7 5.3 5.836-7..855 5.6.4 45.7.883-9..5 4.4 6.8-8.8.67 6.9.5 4.8.85-33.4.8 3.7 7.77-9.3.5 9.. 34.6.8-37..33 3. 8.74 -..34..7 9.9.798-4.6.38.7 9.74 -.7.95 95..33 5.9.778-43.4.43..694-8.7.4 89.4.35.6.76-46.4.48.8 5.66-53.7.547 63.8.3 9..76-58..75.7.57 77.3.55 43.4.4 6.7.67-68..7 8.4 3.555 5.5.94.4.3..67-89.7.4 4.7 VCE =.5 V, IC = 3 ma 5.937-3..86 67.8.4 85..97-5.3.8 8.9.94 -.9 9.68 6.4.3 76.5.955 -.. 6..839-44.6 8.856 45.9.44 65.5.97 -.5.6 3. 3.77-63.4 7.858 33..6 55.3.83-9.5.5. 4.699-79.9 6.98.6.7 48.3.76-35.9.3 9.9 5.64-93.8 6.7..8 4.4.699-39.7.4 8.9 6.598-6. 5.458 4..86 38.7.65-43.3.48 8. 7.564-6.4 4.898 97.3.89 36.7.63-46..55 7.4 8.534-5.9 4.49 9..93 34..587-48..6 6.8 9.5-34. 4.3 85.5.95 33.3.565-5..69 6.3.494-4.6 3.696 8.6.99 3..549-5.3.74 5.7 5.438-7.6.68 59.5.3 9..58-59.9.99 3.6.49 6.4.4 4.8.3 8.7.485-67.6.5 9.6 3.4 7..474..87 4..448-85.5.6 6.5 See note on next page. -j -j5 j5 5 5 S 5 GHz S 5 GHz j S.5 GHz S.5 GHz -j 8 5-5 S.5 GHz - S.5 GHz 9 4 6 8 S NE68 SERIES 6..3 S 5 GHz S 5 GHz -6 3.5-3

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j -j j5 -j5 NE6833 VCE = 8 V, IC = 7 ma j5 -j5 j j5 j5 S GHz 5 5 555 S GHz S. GHz -j5 S. GHz -j5 -j Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = ma) FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db).8-7. 7.578 53.8.3 68.7.98 -.7.37 8.8.639-49. 4.3 34..39 69.8.783-9.9.46 5.6 5.344-83.3 7.67 5.5.65 67.8.579 -.5.8.7.7-3.4 4.6 86.7.9 73.5.49-7.7. 5. 5.5-44..87 75.3.6 74.8.454-7.8.5..98-76.3.54 66.. 74.7.438-6.9.4 9. 3.37 37.6.669 53..33 73..49 -..99 7.3 VCE = 8 V, IC = ma.744-3.7. 48.4.7 57.9.896-4.6.5 3..553-54.5 6.3 7.9.37 69..737 -.7.54 6.4 5.77-87. 8.93..6 7.6.54 -.9.88..34-5.8 4.84 85.3.9 76.3.46-7..4 4.7 5.9-46..98 75..65 75.9.43-6.5.4.3.79 8..35 66.5.7 75..43-6.8.3 9.3 3. 34..736 53.9.3 73.7.38 -.3.99 7.3 VCE = 8 V, IC = ma.594-43.3 9.85 38..3 6..79-9.4.57 33.5.389-66.3 9.8 7.5.35 73..64 -.6.69 7.4 5.75-95.5 8.683 96..57 74..48-6.5.98.8.89-7.5 4.5 8.3. 79.6.44-3..3 5. 5.64-6.8 3.78 73.3.67 78.9.46-3.9.4.4.7 67..46 64.9. 74.9.44-3.8. 9.5 3. 3.5.774 53..3 7.4.379-9.4.98 7.4 VCE = 8 V, IC = 3 ma.557-46.9 3.97 35..7 65.9.836-7.4.5 3.5.354-7.7 9.96 5..9 73.4.664 -..67 8. 5.58 -.5 8.499 94.8.59 77.7.53-7.7.95.6.8-36. 4.363 8.7. 8.7.455-4.3.3 4.9 5.65-75. 3.9 7.7.67 8..48-4..3.5.76 56..348 65..9 77..45-4..3 9. 3.7 8.4.74 53..35 74..387-9.7.98 7.3 Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 8 5-5 S. GHz - 9 S 5-9 6 S GHz S.5..5. GHz 5 S GHz -6 3 5-3

TYPICAL COMMON EMITTER SCATTERING PARAMETERS Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = ma) NE6835 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db).836-6. 8.47 6.4.4 73.6.959 -.3.6 3. 5.659-5..48 4.7.4 44.3.654-33..38 4.4.585-46. 6.65 9.3.5 38.3.5-38.5.68. 5.557-67. 4.555 75.5.58 39.3.47-43..93 8.9.56-8. 3.57 63.9.68 4.3.46-49.4. 6.4 3.56 59.6.43 43.4.88 43..468-64.3..4 4.56 4.8.854 5..3 4.9.49-8.4.7.6 5.563 7..56 8..4 38.7.5-96..98.3 VCE = 8 V, IC = ma.78-3. 4.97 57..3 73.4.937-3.9.5 3.6 5.69-7.6 3.5 9.6.36 44.6.58-35..47 5.6.558-54.7 7.33 87.5.45 43..457-38.5.79. 5.54-73. 4.95 73.9.55 45.8.45-4.6. 9.4.547 75.3 3.778 6.9.67 47.6.4-48.8.5 6. 3.549 56.5.59 43.3.9 47.4.48-63.7.9.7 4.55 4.6.99 5.5.9 44..45-79.7.5.9 5.55 5..69 8.7.49 39.4.486-95..96.4 VCE = 8 V, IC = ma.654-49.9 36.87 49.3. 67.4.877-9.. 35. 5.547-39.7 4.98.5.7 49..475-34.9.66 7.5.535-68. 7.96 83..38 53.7.39-35.7.95 3. 5.57-77.7 5.38 7.3.5 56..375-39.9.8 8.4.534 68.5 4.7 6..65 56.6.376-46.5.9 6. 3.54 5.9.78 4.7.94 53.4.389-6.9.7 3. 4.544 37..3 5.5.4 47.8.45-78...6 5.544.7.745 9..56 4.3.45-93.7.94.5 VCE = 8 V, IC = 3 ma 5 GHz 5 GHz S S. GHz. GHz S. GHz S. GHz.575-64. 43.45 44.. 64..83 -.9.6 36.3 5.539-5. 5.38 97.9.3 5.7.44-3.3.77 8..537-73.7 7.96 8..36 58.9.38-3.9..7 5.53 73.7 5.38 69.9.49 6.7.37-37.8. 8.3.54 65.5 4.58 6..64 6..374-44.9.9 6. 3.549 49.8.767 4.9.94 55.9.39-6.9.6 3. 4.55 35.7.8 4.9.5 49.8.46-77.4.. 5.553..73 8.5.57 4.9.453-93.3.9.4 Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 5 GHz 5 GHz

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C). -..6 S 3 GHz..6 S 3 GHz 4 S.5 GHz 4-4 S.5 GHz - Coordinates in Ohms - Frequency in GHz 5 35 -.6 (VCE =.5 V, IC = 3 ma) - NE6839 7 VCE =.5 V, IC =.3 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) 5.996-3.4.89 75..4 83..995 -..3 8.9.995 -.4.79 73..7 8.3.993 -.7.6 6..99 -.3.7 6.9.5 74.5.989-5.7.6 3.3 3.973-3.7.3 53.6.75 68.7.985-8.7.9.4 4.953-4..993 45.9.98 64.3.976 -.4.9. 5.93-5.3.99 37.. 59.3.965-3.8.5 9. 6.99-6.5.8 9.9.38 53.5.949-6.4.8 8.6 8.86-79.9.98 4.3.67 4.7.98 -..37 7.4.89-98.5.87..84 33.4.888-5..45 6.8 5.744-4..79 7..9 4..88-35..66 5.8.73-73..63 5.7.55 3.4.8-46.3.85 5. 3.76 4..438 8.5.89 8.4.77-76.7.6.3 VCE =.5 V, IC =. ma 5.985-6.8 3.763 75.3.6 86.4.989 -.8. 3.7.97-4.8 3.648 7..9 8.4.98-4.8...94-7.5 3.497 59..5 74.3.963-9.5. 8.4 3.94-4.4 3.346 49.4.7 65.4.946-3.9.7 6.8 4.876-53.8 3.84 4.6.9 58.7.96-7.8. 5.4 5.88-65. 3.43 3.8.6 53.8.884 -.9.5 4.6 6.79-76.9.88 4..9 47.7.845-4..3 3.8 8.75-98.4.56 9.8.37 38.9.778-8.6.4.6.663-7.6.37 98.4.45 3.3.76-3.9.49.9 5.596-57.8.686 74.8.45 3.5.63-39.8.75.7.6 73.8.346 56.9.3 4.6.583-48.9.4 8.9 3.66 36.9.94 3.9.44 47.4.538-75.9. 5.4 VCE =.5 V, IC = 3 ma 5.96 -.7.46 7..5 84.7.975-4.6.7 8.4.895-3.5 9.954 64.8.7 79..97-9.6.5 5.7.89-4. 9. 48.6.46 67.6.9-8..9.9 3.755-6.3 8.67 36..6 57.7.86-4.5.9. 4.694-76.4 7.65 5.8.74 5.4.754-9.3.35 9.9 5.69-9. 6.39 7..83 49.8.69-3.3.43 8.8 6.574-3. 5.66 9.8.89 46.7.634-34.4.5 8. 8.5-5. 4.558 97.8.99 43.3.55-37..65 6.6.47-43.4 3.85 88.7.6 4..496-38.6.77 5.6 5.453-78.4.684 7.7.3 43.6.4-43.3.99 3.4.48 59.4.78 56.4.4 47.3.36-5.3. 9.7 3.567 3.6.44 34..97 49.7.3-78.6.8 6.9 8 35 S.5 GHz 9 S S.5 GHz 3 GHz.5..5.5 Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 5 7.5 S 3 GHz 45

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) NE6839 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db).764-8 7.86 56. 53.944 -.9 39.5.675-55 5.33 38.8 7.855-9.54 3.8 3.569-76.659 6.8 6.734 -.69 8.5 4.48-94.6 6.5 59.698-5.74 6.3 5.43-8.886 7.35 59.6-4.86 4. 6.398-7.696.43 58.589-4.86.5 7.374-33 6.888 97.46 59.53-6.99.8 8.354-4 6.73 93.56 59.5-5.97.4 9.339-5 5.4 88.55 6.493-8.3 7.7.33-59 4.963 85.66 6.493-5.5 7.4.333-66 4.576 8.69 6.488-8.8 6.5.343-74 4.64 78.76 6.457-7.9 5.7 3.33 8 3.9 76.8 63.467-9. 4.8 4.343 73 3.656 73.89 63.449-9.9 4.3 5.348 7 3.433 7.98 66.447-9.6 3.9.44 5.656 56.9 6.388-4.4.9 3.5 6.89 38.9 6.33-63. 9.8 4.595.46 7.56 5.3-95.88 7.5 5.65 97.9.37 44.343-6.83 5.5 Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain

NE688 NONLINEAR MODEL SCHEMATIC Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model Base X BJT NONLINEAR MODEL PARAMETERS () CBEPKG PKG LE Emitter LEX LC LC UNITS LCX PKG Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 688 LC LE PKG PKG CBEPKG X LCX LEX Collector.7e-.e-.6e-9.54e-9.83e-9.9e-.5e-.5e-.8e-9 Q.8e-9.9e-9 MODEL RANGE Frequency:.5 to 5. GHz Bias: VCE =.5 V to 8. V, IC = 3 ma to ma Date: 5/9/96 Note:. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.

NE689 NONLINEAR MODEL SCHEMATIC Parameters Q Parameters Q IS.7e-6 BF 85. NF. VAF 5. IKF.55 ISE.77e- NE. BR NR VAR Infinity IKR Infinity ISC NC RE.6 RB RBM 3.7 IRB.e-5 RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model Base MJC.56 XCJC CJS VJS.75 MJS FC.5 TF 4.e- XTF 3 VTF 5 ITF. PTF TR X BJT NONLINEAR MODEL PARAMETERS ().3e-9 EG. XTB XTI 3 KF AF PKG LE Emitter LEX UNITS LCX PKG Parameter time Units seconds capacitance farads inductance resistance voltage current Q ADDITIONAL PARAMETERS henries ohms volts amps Parameters 689 LE PKG PKG X LCX LEX Collector.7e-.e-.3e-9.85e-9.8e-.e-.9e-9.9e-9.9e-9 MODEL RANGE Frequency:.5 to 3. GHz Bias: VCE =.5 V to 8. V, IC =.3 ma to ma

NE683 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS () UNITS Parameter Units Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model X CBEPKG PKG LE Emitter LEX Q LCX PKG time Collector capacitance inductance resistance voltage current seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 683 LE PKG PKG CBEPKG X LCX LEX.7e-.e-.5e-9.8e-9.e-.6e-.4e-.e-9.8e-9.e-9 MODEL RANGE Frequency:.5 to 3. GHz Bias: VCE =.5 V to 8 V, IC =.3 ma to ma Date: //96 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.

NE6833 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model X CBEPKG PKG LE Emitter LEX Q LCX PKG UNITS Collector Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 6833 LE PKG PKG CBEPKG X LCX LEX.7e-.e-.9e-9.e-9.e-.e-.e-.3e-9.6e-9.3e-9 MODEL RANGE Frequency:. to 8. GHz Bias: VCE = V to 8 V, IC = ma to 3 ma Date: 7/97 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.

NE6835 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85. XCJC NF. CJS VAF 5. VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC BASE.8e- VJC.7 () Gummel-Poon Model RB_PKG. ohms CBEX_PKG.pF _PKG.5nH.45nH CBE_PKG.5pF.7pF _PKG.pF LE_PKG.38nH RE_PKG. ohms EMITTER LC.96 nh.pf Q LC_PKG.5nH _PKG.pF X_PKG UNITS.pF Parameter time RC_PKG. ohms capacitance inductance resistance voltage current COLLECTOR Units seconds farads henries ohms volts amps MODEL RANGE Frequency:.5 to 5. GHz Bias: VCE = 8. V, IC = 7 ma to 3 ma Date: //96

NE6839 NONLINEAR MODEL SCHEMATIC Base Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85. XCJC NF. CJS VAF 5. VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4.e- BR. XTF 3. NR. VTF 5. VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC. EG. RE.6 XTB RB. XTI 3. RBM 3.7 KF IRB.e-5 AF. RC 8. CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model X BJT NONLINEAR MODEL PARAMETERS () CBEPKG PKG LE Emitter LEX LC UNITS LCX Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 6839 LC LE PKG PKG CBEPKG X LCX LEX Q PKG Collector.7e-.e-.88e-9.79e-9.7e-9.65e-.65e-.e-.39e-9.39e-9.e-9 MODEL RANGE Frequency:. to 3. GHz Bias: VCE =.5 V to 8. V, IC =.3 ma to 7 ma Date: 6/7/96

OUTLINE DIMENSIONS (Units in mm).9 ±. NE68 (CHIP) (Chip Thickness: 6 mm) BASE.35±..3 EMITTER.3φ..35±. PACKAGE OUTLINE 8 PACKAGE OUTLINE 8 RECOMMENDED P.C.B. LAYOUT.3. ±..5 ±.. ±..65 3.65.6.65 +..4 -.5.6 ±..5. +. -..75 ±.5.6. ±..65.3.9 ±. 4 +..3 -.5 (LEADS, 3, 4).3 to..5 +. -.5 PIN CONNECTIONS. Collector. Emitter 3. Base 4. Emitter PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT.6 ±..8 ±. 3.3 +. -.5 LEAD 3 ONLY to..5 +. -.5 PIN CONNECTIONS. Emitter. Base 3. Collector PACKAGE OUTLINE 3 PACKAGE OUTLINE 3 RECOMMENDED P.C.B. LAYOUT.5. ±..5 ±. 3 MARKING.3 +. -.5 (ALL LEADS) to..5 +. -.5 PIN CONNECTIONS. Emitter. Base 3. Collector.5.6.6.6.8.3.7.7.8 3 3 3 4.5.65.6..3

OUTLINE DIMENSIONS (Units in mm).9 ±..95.9. to.4.8.5±.6 C +.6. -.4.9 ±..95.85. +. -. PACKAGE OUTLINE 33 (SOT-3) +..8 -.3 +..5 -. to. PACKAGE OUTLINE 35 (MICRO-X) E.55±. φ. PACKAGE OUTLINE 39.6 +. -.5.8 5 E 3 3.8 MIN ALL LEADS.8 +. -.3.5 +. -. 45 3 to. B 4 5.4 +. -.5 (ALL LEADS).65 +. -.5.6 +. -.6.55.8 MAX +..4 -.5 (LEADS, 3, 4).9.6 +. -.6 PIN CONNECTIONS. Emitter. Base 3. Collector PIN CONNECTIONS.Collector. Emitter 3. Base 4. Emitter PIN CONNECTIONS.Collector. Emitter 3. Base 4. Emitter PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT.4 PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT.8.9..4. 3.95 3 4.9.

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39R.9 ±.. +. -..6 +. -.5.85.95.8 3 5.8 +. -.3.5 +. -. to. +..4 -.5 (LEADS, 3, 4).6 +. -.6 PART QUANTITY PACKAGING NUMBER NE68 Waffle Pack NE688-T 3 Tape & Reel NE689-T 3 Tape & Reel NE683-T 3 Tape & Reel NE6833-TB 3 Tape & Reel NE6835 ESD Bag NE6839-T 3 Tape & Reel NE6839R-T 3 Tape & Reel PIN CONNECTIONS. Emitter. Collector 3. Emitter 4. Base ORDERING INFORMATION (Solder Contains Lead) ORDERING INFORMATION (Pb-Free) PART QUANTITY PACKAGING NUMBER NE68 Waffle Pack NE688-T-A 3 Tape & Reel NE689-T-A 3 Tape & Reel NE683-T-A 3 Tape & Reel NE6833-TB-A 3 Tape & Reel NE6835 ESD Bag NE6839-T-A 3 Tape & Reel NE6839R-T 3 Tape & Reel 4 5.8 PACKAGE OUTLINE 39R RECOMMENDED P.C.B. LAYOUT.4.9. 3 4.