SD57045 RF POWER TRANSISTORS The LdmoST FAMILY

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1 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db 945 MHz BeO FREE PACKAGE DESCRIPTION The SD5745 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1. GHz. The SD5745 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. ORDER CODE SD5745 M243 epoxy sealed PIN CONNECTION 1 BRANDING SD Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 65 V V DGR Drain-Gate Voltage (R GS = 1 MΩ) 65 V V GS Gate-Source Voltage ± 2 V I D Drain Current 5 A P DISS Power Dissipation (@ Tc = 7 C) 93 W Tj Max. Operating Junction Temperature 2 C T STG Storage Temperature -65 to + 2 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.4 C/W November, /11

2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V (BR)DSS V GS = V I DS = 1 ma 65 V I DSS V GS = V V DS = 28 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = 28 V I D = 25 ma V V DS(ON) V GS = V I D = 3 A.7.9 V G FS V DS = V I D = 5 A mho C ISS V GS = V V DS = 28 V f = 1 MHz 8 pf C OSS V GS = V V DS = 28 V f = 1 MHz 4 pf C RSS V GS = V V DS = 28 V f = 1 MHz 3.2 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD = 28 V I DQ = 25 ma f = 945 MHz 45 W IMD3 V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP dbc G PS V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP db η D V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP 33 4 % Load mismatch note: f 1 = 945 MHz PEP f 2 = MHz V DD = 28 V I DQ = 25 ma P OUT = 45 W f = 945 MHz ALL PHASE ANGLES Ref B :1 VSWR IMPEDANCE DATA D Z D Typical Input Typical Drain G Zin S FREQ. Z IN (Ω) Z DL (Ω) 925 MHz j j MHz j j MHz j j MHz.93 + j j MHz.91 + j j /11

3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage C (pf) SD5745 Gate-Source Voltage vs. Case Temperature VGS (NORMALIZED) 1.4 f = 1 MHz Ciss 1.2 ID = 3A Coss Crss 1.98 ID = 2A ID = 1.5 A ID = 1A VDS = V ID = 25 ma Vds (V) Drain Current vs. Gate Voltage Id (A) Tcase ( C) Safe Operating Area Y-Axis o Tc = 7 C Tc = o C o Tc = 25 C VDS = V Vgs (V).1 1 X-Axis 3/11

4 TYPICAL PERFORMANCE (CW) Output Power and Power Gain vs. Input Power 7 Gp (db) 18 Power Gain vs. Output Power Gp (db) 2 6 Gp Idq = 45 ma Idq = 25 ma Idq = 15 ma 3 12 Idq = 75 ma Pout 2 8 IDQ = 25 ma f = 945 MHz 6 8 Vdd = 28 V f = 945 Mhz Pin (W) Efficiency vs. Output Power Nc (%) 6 Broadband Power Performance Gp, GAIN (db) 16 RTL (db) GAIN RETURN LOSS Freq = 945 Mhz IDQ = 25mA Output Power vs. Drain Voltage f, FREQUENCY (MHz) Output Power vs Gate Biat Voltage 6 8 Vdd = 28 V Idq = 25 ma f = 945 MHz Pin =3 W Pin = 2 W Pin = 1 W Vds (V) Pin = 1.5 W f = 945 MHz VGS (V) 4/11

5 TYPICAL PERFORMANCE (PEP) Output Power vs. Input Power 6 Power Gain vs. Input Power Gp (db) 18 SD Efficiency vs. Output Power (PeP) Nd (%) Intermodulation Distortion vs. Output Power IMD3 (dbc) IDQ = 25 ma f1 = 945 MHz f2 = MHz Pin (W) f1 = 945 Mhz f2 = Mhz IDQ = 25mA Pout (WPEP) 13 IDQ = 25 ma f1 = 945 MHz f2 = MHz Pin (W) Intermodulation Distortion vs. Output Power IMD (dbc) IDQ = 25 ma f1 = 945 MHz f2 = MHz Pout (WPEP) Class A Third Order Intercept Point Pout (dbm) 7 IMD3 IMD5 IMD Idq = 75 ma Fundamental -3 Idq = 15 ma Idq = 45 ma Idq = 25 ma 2 IMD f1 = 945 Mhz f2 = Mhz VDS = 26 V ID = 1.8 A f1 = 945 MHz f2 = MHz Pin (dbm) 5/11

6 COMMON SOURCE S-PARAMETER (V DS = 13.5 V I DS = 2 A) FREQ ls 11 l S 11 φ ls 21 l S 21 φ ls 12 l S12 φ ls 22 l S 22 φ (MHz) /11

7 COMMON SOURCE S-PARAMETER (V DS = 28 V I DS = 2 A) FREQ ls 11 l S 11 φ ls 21 l S 21 φ ls 12 l S12 φ ls 22 l S 22 φ (MHz) /11

8 945 MHz TEST CIRCUIT SCHEMATIC VG G VDD RF IN RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE =.56 [1.42] +.2 [.5] -. [.] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. Ref A 945 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C19 22 µf/ 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C18, C14.1 µf/5 V SURFACE MOUNT CERAMIC CHIP CAPACITOR C17 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16, C12, C11, C1 47 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C15 µf/5 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C13 pf ATC 7B SURFACE MOUNT CERAMIC CHIP CAPACITOR C 3. pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C9, C pf GIGA TRIM VARIABLE CAPACITOR C8 6.2 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C6, C5, C4 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C3 3 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR R3 12 OHM, 2W SURFACE MOUNT CHIP RESISTOR R2 4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR R1 18K OHM, 1W SURFACE MOUNT CHIP RESISTOR FB2 SHIELD BEAD SURFACE MOUNT EMI FB1 SHIELD BEAD SURFACE MOUNT EMI L2 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=.59[1.49], NYLON COATED MAGNET WIRE L1 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=.59[1.49], NYLON COATED MAGNET WIRE PCB WOVEN FIBERGLASS REINFORCED PTFE.8 THK, εr=2.55, 2 Oz EDCu BOTH SIDE 8/11

9 945 MHz PRODUCTION TEST FIXTURE 945 MHz TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches Ref A 9/11

10 M243 (.23 x.36 2L N/HERM W/FLG) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A B C D E F G H I J Controlling dimension: Inches 22142E /11

11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 22 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 11/11

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