V DS T jmax G PG-TO262 G FP SP T jmax. Gate source voltage static V GS V GS ± ± Power dissipation, T C = 25 C P tot G-TO220 C3 T C V DD

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1 V DS T jmax G Ω GFP G2 G-TO220 P-TO G-TO220 C3 G PG-TO262 GFP SP T C T C t p T jmax V DD T jmax E AR V DD T jmax Gate source voltage static V GS V GS ± ± Power dissipation, T C = 25 C P tot Reverse diode dv/dt 7) dv/dt 15 V/ns Rev. 3.2 Page

2 V DS T j R thjc R thja wavesoldering V (BR)DSS V GS V GS µ, V V DS V GS T j T j V GS V DS V GS T j T j R G Ω Rev. 3.2 Page

3 3 Transconductance g fs V DS Input capacitance C iss V GS V DS Output capacitance C oss f Reverse transfer capacitance C rss V GS V DS Turn-on delay time t d(on) V DD V GS R G ΩT j 5 C Rise time t r Turn-off delay time t d(off) Fall time t f Gate to source charge Q gs V DD Gate to drain charge Q gd V DD V GS V DD 0 J-STD20 and JESD22 EARf C oss V DS C oss V DS 7 ISD <=I D, di/dt<=400a/us, V DClink =400V, V peak <V BR, DSS, T j <T j,max. Identical low-side and high-side switch. Rev. 3.2 Page

4 Inverse diode direct current, pulsed T C I SM V GS Reverse recovery time t rr V R Reverse recovery charge Q rr di F /dt Peak reverse recovery current I rrm T j I Rev. 3.2 Page

5 3 T C P tot T C Ptot Ptot T C T C T C 2 10 A V DS T C 1 10 ID tp = ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC V 10 3 V DS V DS Rev. 3.2 Page

6 t p t p t p V DS T j V GS t p V DS T j V GS V DS V DS Rev. 3.2 Page

7 f T j V GS Ω V GS Ω T j V GS VGS V GS Rev. 3.2 Page

8 3 T j V DS V GS R G Ω IF R G T j V DS V GS di/dtr G T j V DS V GS di/dt Ω R G Ω R G Rev. 3.2 Page

9 dv/dtr G T j V DS V GS T j V DS V GS R G Ω P dv/dt Ω R G T j R G V DS V GS P T j Ω R G Rev. 3.2 Page

10 T j V DD V (BR)DSS T j V(BR)DSS T j T j f E AR V DS V GS f V DS Rev. 3.2 Page

11 C oss fv DS V DS Rev. 3.2 Page

12 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO , PG-TO : Outline Rev. 3.2 Page

13 SPP20N60C3 SPI20N60C3, SPA20N60C3 Outline PG TO220 FullPAK MILLIMETERS DIMENSIONS MIN. MAX. DOCUMENT NO. A Z8B A A REVISION b b b SCALE 5:1 b mm b c D D EUROPEAN PROJECTION E e 2.54 H L L1 øp ISSUE DATE Q Rev. 3.2 Page

14 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO /PG-TO (I²-PAK) Rev. 3.2 Page

15 600VCoolMOSªC3PowerTransistor SPx20N60C3 RevisionHistory SPx20N60C3 Revision: ,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.3.2,

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