High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz Associated Gain of 17 db and Noise Figure of 1.1 db at 2 V and 5 ma P 1dB of 12 dbm at 2 V and 2 ma an be Used Without Impedance Matching Applications NA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down onverter for ellular and PS Handsets and ordless Telephones Oscillator for TV Delivery and TVRO Systems up to 1 GHz Surface Mount Plastic Package/ SOT-343 (S-7) Outline 4T Pin onfiguration Base Emitter 3x Emitter ollector Note: Package marking provides orientation and identification. 3 = Device code x = Date code character. A new character is assigned for each month, year Description Agilent s HBFP-42 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead S-7 (SOT-343) surface mount plastic package. HBFP-42 provides an associated gain of 17 db, noise figure of 1.1 db, and P 1dB of 12 dbm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-42 is ideal for cellular/ PS handsets as well as for -Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 9 MHz, 1.9 GHz, 2.4 GHz, and beyond.
2 HBFP-42 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V BO ollector-base Voltage V 15. V EO ollector-emitter Voltage V 4.5 I ollector urrent ma 36 P T Power Dissipation [2] mw 162 T j Junction Temperature 15 T STG Storage Temperature -65 to 15 Thermal Resistance: θ jc = 3 /W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. P T limited by maximum ratings. Electrical Specifications, T = 25 Symbol Parameters and Test onditions Units Min. Typ. Max. D haracteristics BV EO ollector-emitter Breakdown Voltage I = 1 ma, open base V 4.5 I BO ollector-utoff urrent V B = 5 V, I E = na 2 I EBO Emitter-Base utoff urrent V EB = 1.5 V, I = µa 35 h FE D urrent Gain V E = 2 V, I = 5 ma 5 8 15 RF haracteristics F MIN Minimum Noise Figure I = 5 ma, V E = 2 V, f = 1.8 GHz db 1.1 1.4 G a Associated Gain I = 5 ma, V E = 2 V, f = 1.8 GHz db 15.5 17 S 21 2 Insertion Power Gain I = 2 ma, V E = 2 V, f = 1.8 GHz db 17 P -1dB Power Output @ 1 db I = 2 ma, V E = 2 V, f = 1.8 GHz dbm 12 ompression Point
3 HBFP-42 Typical Scattering Parameters, V E = 2 V, I = 5 ma, T = 25 Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang.1.746-11.9 23.4 14.853 171. -41.4.9 84.8.985-6.6.5.682-55.6 21.9 12.473 139.8-28.5.38 63.6.861-29.4.9.67-9.1 19.9 9.99 116.8-25..56 49.3.696-46.6 1..585-97.5 19.3 9.181 112.2-24.5.59 46.9.661-49.3 1.5.532-128.3 16.8 6.918 93.1-22.9.72 37.2.516-62.2 1.8.512-143.1 15.5 5.952 83.4-22.3.77 33.2.45-67.7 2..52-151.6 14.7 5.453 78.4-21.9.8 31.2.419-71.6 2.5.49-169.8 12.9 4.422 65.8-21.2.88 26.9.359-78.4 3..483-174.6 11.6 3.786 55.2-2.5.95 23.4.314-86.3 3.5.48 161.4 1.3 3.286 45.2-19.8.12 19.8.286-92.5 4..479 149.2 9.3 2.98 35.7-19.2.11 16.3.266-98.1 4.5.482 137.6 8.4 2.629 26.5-18.5.118 12.5.248-14.1 5..487 126.5 7.6 2.389 17.4-17.9.127 8.1.233-11.5 5.5.497 115.4 6.9 2.25 8.3-17.3.136 3.5.29-117.9 6..513 15. 6.2 2.4 -.8-16.8.145-1.5.189-126.4 6.5.532 94.6 5.6 1.92-9.8-16.3.153-7.1.161-137.1 7..553 84. 5. 1.778-18.7-15.8.162-12.6.134-152. 7.5.575 74.5 4.4 1.662-27.5-15.3.171-18.2.115-171.2 8..592 66. 3.9 1.559-36.1-14.9.179-24..11 167.1 8.5.69 58.2 3.3 1.469-44.4-14.6.186-29.8.113 147.2 9..623 5.7 2.9 1.393-52.6-14.2.195-35.4.12 13.6 9.5.635 43. 2.4 1.312-6.8-13.9.22-41.6.127 118. 1..648 34.5 1.9 1.248-69.1-13.6.29-48..13 13.9 HBFP-42 Noise Parameters: V E = 2 V, I = 5 ma Freq. F min Γ opt R N G a GHz db Mag Ang Ω db.9 1..281 28.8 9.6 22.19 1. 1.2.266 36.6 9.2 21.39 1.5 1.1.187 68.3 7.6 18.3 1.8 1.14.175 94.1 6.8 16.92 2. 1.18.154 118.4 6.1 16.21 2.5 1.25.184 146.5 5.4 14.34 3. 1.32.226 165.9 5. 13. 3.5 1.39.254-176.8 4.9 11.79 4. 1.49.292-162.3 5. 1.79 4.5 1.58.312-147.3 6. 9.95 5. 1.63.355-135.5 6.8 9.22 5.5 1.75.375-121. 9.3 8.55 6. 1.88.416-18.5 12.3 7.99 6.5 1.94.453-98.1 15.8 7.47 7. 2.5.486-84.4 21.4 6.99 7.5 2.15.56-74.8 26.8 6.49 8. 2.23.532-65. 33.6 6.4 8.5 2.47.556-56.8 41.7 5.65 9. 2.59.589-48.4 5.4 5.32 9.5 2.63.61-4.4 58.2 4.91 1. 2.74.624-31. 68.3 4.56 S and noise parameters are measured on a microstrip line made on.25 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point.
4 HBFP-42 Typical Scattering Parameters, V E = 2 V, I = 15 ma, T = 25 Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang.1.481-22.1 29.1 28.438 166.1-43..7 82.3.959-1.5.5.437-91.4 26. 19.969 124.7-31.2.27 6.7.72-41.4.9.416-131. 22.6 13.526 11.9-28.2.39 53.4.5-57.2 1..414-138. 21.9 12.378 97.8-27.7.41 52.9.465-59.6 1.5.415-163.4 18.7 8.619 81.9-25.5.53 49.6.341-69.8 1.8.418-174.6 17.2 7.254 74.2-24.4.6 47.9.292-74.4 2..421 178.9 16.3 6.549 69.7-23.7.65 46.6.269-77.6 2.5.428 165.4 14.4 5.262 59.3-22.3.77 42.9.226-84.1 3..435 153.6 12.9 4.418 49.9-21..89 38.8.196-91.1 3.5.439 143.2 11.6 3.811 41. -19.9.11 34.1.177-96.8 4..442 133.3 1.5 3.362 32.4-18.9.113 29..163-12.1 4.5.447 123.7 9.6 3.24 23.9-18.1.125 23.7.152-17.2 5..455 114.1 8.8 2.749 15.4-17.3.137 17.9.138-113.4 5.5.467 14.6 8. 2.522 6.8-16.6.148 11.8.12-121.1 6..484 95.5 7.3 2.327-1.8-16..159 5.4.1-131.4 6.5.54 86. 6.7 2.163-1.4-15.4.169-1..77-148.2 7..527 76.7 6.1 2.14-18.9-14.9.179-7.6.59-178.2 7.5.552 68. 5.5 1.88-27.4-14.5.188-14.3.6 144.1 8..572 6.4 4.9 1.765-35.5-14.1.197-2.6.77 116.6 8.5.59 53.3 4.4 1.658-43.6-13.8.25-27.1.96 1.7 9..64 46.4 3.9 1.565-51.6-13.4.213-33.6.112 89. 9.5.616 39.2 3.4 1.484-59.6-13.1.221-4.3.123 77.9 1..63 31.4 3. 1.46-67.7-12.9.228-47.2.134 66.5 HBFP-42 Noise Parameters: V E = 2 V, I = 15 ma Freq. F min Γ opt R N G a GHz db Mag Ang Ω db.9 1.57.33-135.5 8. 23.88 1. 1.58.54-151.8 7.8 23.4 1.5 1.63.169-155.2 6.7 19.79 1.8 1.67.252-148.1 6.3 18.34 2. 1.74.234-158.3 6.4 17.52 2.5 1.72.36-149.2 6.1 15.71 3. 1.76.343-142.2 6.5 14.24 3.5 1.84.365-133.5 7.7 12.97 4. 1.89.383-124.4 9.4 11.89 4.5 1.97.47-115.6 11.5 11.1 5. 2.3.431-16.3 14.1 1.22 5.5 2.15.463-96.8 17.8 9.53 6. 2.28.483-87.3 22.9 8.89 6.5 2.36.513-77.3 28.7 8.32 7. 2.42.538-67.8 35.5 7.79 7.5 2.54.56-59.2 43. 7.3 8. 2.65.581-51.4 51.7 6.85 8.5 2.83.62-44.6 61.3 6.42 9. 2.96.621-37.2 71. 5.99 9.5 3.1.64-29.9 81.1 5.61 1. 3.14.653-21.8 9.5 5.23 S and noise parameters are measured on a microstrip line made on.25 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point.
5 HBFP-42 Typical Performance ASSOIATED GAIN (db) 25 2 15 1 5 2 ma 5 ma 1 ma 15 ma 2 4 6 8 1 NOISE FIGURE (db) 4 3 2 1 2 ma 5 ma 1 ma 15 ma 2 4 6 8 1 ASSOIATED GAIN (db) 3 25 2 15 1 5.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 5 1 15 2 25 FREQUENY (GHz) FREQUENY (GHz) OETOR URRENT (ma) Figure 1. Associated Gain vs. Frequency and ollector urrent at 2 V. Figure 2. Noise Figure vs. Frequency and ollector urrent at 2 V. Figure 3. Associated Gain vs. ollector urrent and Frequency at 2 V. 3. 25 2.5 NOISE FIGURE (db) 2.5 2. 1.5.9 GHz 1. 1.8 GHz 2.5 GHz 3 GHz.5 4 GHz 5 GHz 6 GHz 5 1 15 2 25 ASSOIATED GAIN (db) 2 15 1 5.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 1 2 3 4 5 6 NOISE FIGURE (db) 2. 1.5 1..9 GHz 1.8 GHz 2.5 GHz.5 3 GHz 4 GHz 5 GHz 6 GHz 1 2 3 4 5 6 OETOR URRENT (ma) VOTAGE (V) VOTAGE (V) Figure 4. Noise Figure vs. ollector urrent and Frequency at 2 V. Figure 5. Associated Gain vs. Voltage (V E ) at 5 ma. Figure 6. Noise Figure vs. Voltage (V E ) at 5 ma.
6 HBFP-42 Die Model and PSPIE Parameters XX B XX MP7 R R=7.78 OH =7E-3 pf MP2 DIODE AREA= REGION= MODE = DB TEMP= MP6 MP5 MP9 R = 19E-3 pf MP1 NPNBJTSUBST MP16 DIODE TEMP= MODE=DBE REGION= AREA= MP8 R R =12 OH AREA=3 REGION= MODE=BJTMODE R=.194 OH MP3 DIODE MP1 DIODEMODEFORM # DIODE MODE # MODE = DB AREA= REGION= MODE=DS TEMP= IS=I.457E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS= JO=2.393E-14 TT= EG= VJ=.729 M=.44 N=1 F=.8 MP12 DIODEMODEFORM # DIODE MODE # MODE = DS RS=2.17347E2 JO=8.974E-14 TT= EG= VJ=.6 M=.42 N= F=.8 ISR= NR= IKF= NBV= IBV= NBV= FFE= ISR= NR= IKF= NBV= IBV= NBV= FFE= MP68 BITMODEFORM NPN=yes PNP= Forward BF=1E6 IKF=1.4737E-1 ISE=7.94E-2 NE=1.6 VAF=4.4E1 NF=1 TF=5.376E-12 XTF=2 Reverse BR=1 IKR=1.1E-2 IS= N=2 VAR=3.37 NR=1.5 TR=4E-9 VTF=.8 ITF=2.2185486E-1 PTF= XTB=.7 APPROXOB=yes # BJT MODE # MODE = BJTMODE MP69 R XX R=1 OH E Diode and junction Parasitics EG=1.17 J=2.756E-14 IS=4.4746E-18 IMAX= VJ=.6775 MJ=.3319 XTI=3 XJ=4.3979997E-1 TNOM=21 F=.8 Substrate IS5= NS= JE=7.474248E-14 VJE=.997 MJE=.563 JS= VJS= MJS= RB=9.3144818 IRB=3.29562E-6 RBM=.1 RE= R= Noise KF= AF= KB= AB= FB= MP11 DIODEMODEFORM # DIODE MODE # MODE = DE IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS= JO=2.593E-14 TT= EG= VJ=.8971 M=2.292E-1 N=1.29 F=.8 ISR= NR= IKF= NBV= IBV= NBV= FFE= This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF=1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects.
7 SOT343 Package Model =.5 pf B =.22 nh =.8 pf T1 =.2 nh 2T1 =.5 pf 1T1 EB =.4 pf I =.7 nh B BASE EMITTER 2 OETOR =.2 nh MP44 =.7 nh =.1 pf 1T3 E T3 =.5 nh 2T3 =.1 pf 3 =.2 nh =.144 pf =.1 nh =.15 nh 1T2 T2 =.4 pf E =.1 pf 2T2
8 Part Number Ordering Information Part Number Devices per Reel ontainer Tape Orientation HBFP-42-BK 1 antistatic bag none HBFP-42-TR1 3 7" Reel standard HBFP-42-TR2 1, 13" Reel standard HBFP-42-TR3 3 7" Reel reverse Package Dimensions SOT-343 (S-7 4 ead) 1.3 (.51) BS 1.3 (.51) REF E E1 2.6 (.12) 1.3 (.51).55 (.21) TYP.85 (.33) 1.15 (.45) BS e 1.15 (.45) REF D h A b TYP A1 TYP DIMENSIONS θ SYMBO A A1 b D E e h E1 θ MIN. MAX..8 (.31) 1. (.39) ().1 (.4).25 (.1).35 (.14).1 (.4).2 (.8) 1.9 (.75) 2.1 (.83) 2. (.79) 2.2 (.87).55 (.22).65 (.25).45 TYP (.18) 1.15 (.45).1 (.4) 1.35 (.53).35 (.14) 1 DIMENSIONS ARE IN MIIMETERS (INHES)
9 Device Orientation REE TR1, TR2 TOP VIEW 4 mm END VIEW ARRIER TAPE 8 mm 3x 3x 3x 3x USER FEED DIRETION TR3 TOP VIEW 4 mm END VIEW OVER TAPE 8 mm 3x 3x 3x 3x Tape Dimensions For Outline 4T P D P 2 P E F W t 1 (ARRIER TAPE THIKNESS) D 1 8 MAX. K 5 MAX. A B AVITY PERFORATION DESRIPTION SYMBO SIZE (mm) SIZE (INHES) ENGTH WIDTH DEPTH PITH BOTTOM HOE DIAMETER DIAMETER PITH POSITION A B K P D 1 D P E 2.24 ±.1 2.34 ±.1 1.22 ±.1 4. ±.1 1. +.25 1.55 ±.5 4. ±.1 1.75 ±.1.88 ±.4.92 ±.4.48 ±.4.157 ±.4.39 +.1.61 ±.2.157 ±.4.69 ±.4 ARRIER TAPE WIDTH THIKNESS W t 1 8. ±.3.255 ±.13.315 ±.12.1 ±.5 DISTANE AVITY TO PERFORATION (WIDTH DIRETION) AVITY TO PERFORATION (ENGTH DIRETION) F P 2 3.5 ±.5 2. ±.5.138 ±.2.79 ±.2
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