GenX3 TM 6V IGBT wih Diode Medium speed low Vsa PT IGBTs 5-4 khz swiching IXGK64N6B3D1 IXGX64N6B3D1 V CES = 6V 11 = 64A V CE(sa) 1.8V fi(yp) = 88ns TO-264 (IXGK) Symbol Tes Condiions Maximum Raings V CES = C o 15 C 6 V V CGR = C o 15 C, R GE = 1MΩ 6 V V GES Coninuous ±2 V V GEM Transien ±3 V G C E (TAB) 11 T C = 11 C 64 A M T C = C, 1ms 4 A SSOA V GE = 15V, = 1 C, R G = 3Ω M = 2 A (RBSOA) Clamped inducive load @ V CE 6V P C T C = C 46 W -55... +15 C M 15 C T sg -55... +15 C M d Mouning orque (TO-264) 1.13 / 1 Nm/lb.in. F C Mouning force (PLUS247) 2..12 /..27 N/lb. T L Maximum lead emperaure for soldering 3 C T SOLD 1.6mm (.62 in.) from case for 1s 26 C Weigh TO-264 1 g PLUS247 6 g PLUS247 (IXGX) G CD ES G = Gae C = Collecor E = Emier TAB = Collecor Feaures TAB Opimized for low conducion and swiching losses Square RBSOA Ani-parallel ulra fas diode Inernaional sandard packages Advanages Symbol Tes Condiions Characerisic Values ( = C, unless oherwise specified) Min. Typ. Max. V GE(h) = μa, V CE = V GE 3. 5. V ES V CE = V CES 7 μa V GE = V = 1 C ma I GES V CE = V, V GE = ±2V ± na V CE(sa) = 5A, V GE = 15V, Noe 1 9 1.8 V High power densiy Low gae drive requiremen Applicaions Power Inverers UPS Moor Drives SMPS PFC Circuis Baery Chargers Welding Machines Lamp Ballass 28 IXYS CORPORATION, All righs reserved DS99939A(6/8)
Symbol Tes Condiions Characerisic Values ( = C, unless oherwise specified) Min. Typ. Max. g fs = 5A, V CE = 1V, Noe 1 38 64 S IXGK64N6B3D1 IXGX64N6B3D1 TO-264 (IXGK) Ouline C ies 475 pf C oes V CE = V, V GE = V, f = 1MHz 26 pf C res 65 pf Q g 168 nc Q ge = 5A, V GE = 15V, V CE =.5 V CES 28 nc Q gc 61 nc d(on) ns ri 41 ns Inducive load, T E J = C on mj I C = 5A, V GE = 15V d(off) 138 ns V CE = 48V, R G = 3Ω fi 88 15 ns E off 1. 1.9 mj d(on) 24 ns ri 4 ns Inducive load, T E J = 1 C on 2.7 mj I C = 5A,V GE = 15V d(off) 195 ns V CE = 48V, R G = 3Ω fi 131 ns E off 1.95 mj R hjc.27 C/W R hcs.15 C/W Reverse Diode (FRED) Characerisic Values ( = C, unless oherwise specified) Symbol Tes Condiions Min. Typ. Max. DIM INCHES MILLIMETERS MIN MAX MIN MAX A.185.29 4.7 5.31 A1.12.118 9 3. b.37.55.94 1.4 b1.87.12 2.21 9 b2.11.126 2.79 3.2 c.17.29.43.74 D 1.7 1.47.58 26.59 E.76.799 19.3 2.29 e.215 BSC 5.46 BSC J..1.. K..1.. L.779.842 19.79 21.39 L1.87.12 2.21 9 ØP.122.138 3.1 1 Q.24.6 6.1 6.5 Q1.33.346 8.38 8.79 ØR.155.187 3.94 4.75 ØR1.85.93 2.16 2.36 S.243.3 6.17 6.43 PLUS247 TM (IXGX) Ouline V F = 6A, V GE = V, Noe 1 2.1 V = 15 C 1.4 V I RM = 6A, V GE = V, = C 8.3 A -di F = A/μs, V R = V rr = 1A, -di = 2A/μs, V R = 3V 35 ns R hjc 1.35 C/W Noe 1: Pulse es, 3μs; duy cycle, d 2%. IXYS reserves he righ o change limis, es condiions, and dimensions. Terminals: 1 - Gae 2 - Drain (Collecor) 3 - Source (Emier) 4 - Drain (Collecor) Dim. Millimeer Inches Min. Max. Min. Max. A 4.83 5.21.19. A 1 2.29 4.9. A 2 1.91 2.16.75.85 b 1.14 1.4.45.55 b 1 1.91 2.13.75.84 b 2 2.92 3.12.115.123 C.61.8.24.31 D 2.8 21.34.819.84 E 15.75 16.13.62.635 e 5.45 BSC.215 BSC L 19.81 2.32.78.8 L1 3.81 4.32.15.17 Q 5.59 6.2.22.244 R 4.32 4.83.17.19 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of he following U.S. paens: 4,85,72 5,17,58 5,63,37 5,381, 6,9,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXGK64N6B3D1 IXGX64N6B3D1 Fig. 1. Oupu Characerisics @ ºC Fig. 2. Exended Oupu Characerisics @ ºC 9 8 11V 3 13V 11V 7 6 5 4 3 9V 7V 2 15 9V 2 1 5V 5 7V..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 1 2 3 4 5 6 Fig. 3. Oupu Characerisics @ 1ºC Fig. 4. Dependence of V CE(sa) on Juncion Temperaure 9 11V 1. 1.2 8 9V 1.15 = A 7 6 5 4 3 7V VCE(sa) - Normalized 1.1 1..95.9 = 5A 2 1 5V.85.8 = A..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2.75-5 - 5 75 1 15 - Degrees Cenigrade 3.6 Fig. 5. Collecor-o-Emier Volage vs. Gae-o-Emier Volage 2 Fig. 6. Inpu Admiance 3.4 = ºC 18 3.2 16 3. 14 VCE - Vols 2.8 2.6 2.4 2.2 2. 1.8 = A 5A A 12 8 6 4 ºC - 4ºC 1.6 2 1.4 5 6 7 8 9 1 11 12 13 14 15 V GE - Vols 4. 5. 5.5 6. 6.5 7. 7.5 8. 8.5 V GE - Vols 28 IXYS CORPORATION, All righs reserved
IXGK64N6B3D1 IXGX64N6B3D1 Fig. 7. Transconducance Fig. 8. Gae Charge 11 9 = - 4ºC 16 14 V CE = 3V = 5A g f s - Siemens 8 7 6 5 4 ºC 1ºC VGE - Vols 12 1 8 6 I G = 1 ma 3 4 2 1 2 2 4 6 8 12 14 16 18 2 - Amperes 2 4 6 8 12 14 16 18 Q G - NanoCoulombs 22 Fig. 9. Reverse-Bias Safe Operaing Area 1, Fig. 1. Capaciance 2 18 C ies 16 14 12 8 6 Capaciance - PicoFarads 1, C oes 4 2 R G = 3Ω dv / d < 1V / ns f = 1 MHz C res 2 3 4 5 6 1 5 1 15 2 3 35 4 Fig. 11. Maximum Transien Thermal Impedance 1. Z(h)JC - ºC / W.1.1.1.1.1.1 1 1 Pulse Widh - Seconds IXYS reserves he righ o change limis, es condiions, and dimensions.
IXGK64N6B3D1 IXGX64N6B3D1 Fig. 12. Inducive Swiching Energy Loss vs. Gae Resisance Fig. 13. Inducive Swiching Energy Loss vs. Juncion Temperaure 6 5 = 84A 7 6 5. 4. E off E on - - - - R G = 3Ω, V CE = 48V = 84A 5.5 5. Eoff - MilliJoules 4 3 2 1 E off E on - - - -, V CE = 48V 5 4 3 2 E on - MilliJoules Eoff - MilliJoules 3. 2. 1. 4. 3. 2. E on - MilliJoules 1.5. 1..5-1 5 1 15 2 3 35 R G - Ohms -.5. 35 45 55 65 75 85 95 15 115 1 - Degrees Cenigrade Fig. 14. Inducive Swiching Energy Loss vs. Collecor Curren Fig. 15. Inducive Turn-off Swiching Times vs. Gae Resisance 5. 5.5 18 9 Eoff - MilliJoules 4. 3. 2. 1. E off E on - - - - R G = 3Ω, V CE = 48V = ºC 5. 4. 3. 2. E on - MilliJoules f - Nanoseconds 17 16 15 14 13 12 f d(off) - - - -, V CE = 48V, 42A, 84A 8 7 6 5 4 3 d(off) - Nanoseconds.5 1...5 11 2 -.5. 2 3 35 4 45 5 55 6 65 7 75 8 85 - Amperes 5 1 15 2 3 35 R G - Ohms Fig. 16. Inducive Turn-off Swiching Times vs. Juncion Temperaure Fig. 17. Inducive Turn-off Swiching Times vs. Collecor Curren 18 18 21 17 f d(off) - - - - 17 2 f - Nanoseconds 16 15 14 13 12 11 9 R G = 3Ω, V CE = 48V, 84A 19 175 16 145 d(off) - Nanoseconds f - Nanoseconds 16 15 14 13 12 11 f d(off) - - - - R G = 3Ω, V CE = 48V = ºC 19 18 17 16 15 14 13 d(off) - Nanoseconds 8 13 9 12 7 6 115 35 45 55 65 75 85 95 15 115 1 - Degrees Cenigrade 8 11 7 2 3 35 4 45 5 55 6 65 7 75 8 85 - Amperes 28 IXYS CORPORATION, All righs reserved
IXGK64N6B3D1 IXGX64N6B3D1 r - Nanoseconds 13 12 11 9 8 7 6 5 4 3 Fig. 18. Inducive Turn-on Swiching Times vs. Gae Resisance r d(on) - - - -, V CE = 48V 2 1 2 5 1 15 2 3 35 R G - Ohms = 84A 8 75 7 65 6 55 5 45 4 35 3 d(on) - Nanoseconds r - Nanoseconds 9 8 7 6 5 4 3 2 Fig. 19. Inducive Turn-on Swiching Times vs. Juncion Temperaure r d(on) - - - - R G = 3Ω V CE = 48V 1 22 21 35 45 55 65 75 85 95 15 115 1 - Degrees Cenigrade = 84A 3 29 28 27 26 24 23 d(on) - Nanoseconds Fig. 2. Inducive Turn-on Swiching Times vs. Collecor Curren 75 32 7 r d(on) - - - - 31 65 R G = 3Ω, 3 r - Nanoseconds 6 55 5 45 4 35 V CE = 48V ºC < TJ < 1ºC 29 28 27 26 24 d(on) - Nanoseconds 3 23 22 2 21 15 2 2 3 35 4 45 5 55 6 65 7 75 8 85 - Amperes IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS REF: G_64N6B3(75) 4-9-8-A
IXGK64N6B3D1 IXGX64N6B3D1 16 A 14 4 nc = C V R = 3V 8 A = C V R = 3V 12 8 6 = C = C =15 C Q r 3 2 =12A = 6A = 3A I RM 6 4 =12A = 6A = 3A 4 2 2 1 2 V A/μs 2 4 6 A/μs 8 V F -di F -di F Fig. 21. Forward curren versus V F Fig. 22. Reverse recovery charge Q r versus -di F Fig. 23. Peak reverse curren I RM versus -di F K f 2. 1. rr 14 ns 13 12 11 =12A = 6A = 3A = C V R = 3V V FR 2 V 15 1 fr V FR 1.6 μs 1.2.8 fr.5 I RM Q r. 4 8 12 C 16 9 8 2 4 6 A/μs 8 -di F 5.4 = C = 6A. 2 4 6 A/μs 8 di F Fig. 24. Dynamic parameers Q r, I RM Fig.. Recovery ime rr versus -di F Fig. 26. Peak forward volage V FR and fr versus versus di F 11. K/W 1..1 ºC / W Z hjc Z.1 (h)jc...1.1 DSEP 2x61-6A.1.1.1.1.1.1.1 s.1.1.1.1 1.1 1 1 S Fig. 27. Maximum ransien hermal impedance juncion o case (for diode) 28 IXYS CORPORATION, All righs reserved