InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT * 1) 2)3) 1)2) 1) 1) (, 310023 ) 2) (, 200050 ) 3) (, 411105 ) ( 2011 9 7 ; 2011 10 31 ) (DHBT) - (E-B) - (B-C), -, DHBT. : E-B B-C II InP/GaSbAs/InP DHBT, E-B I B-C II InAlAs/GaSbAs/InP DHBT,. : InAlAs/GaSbAs, InP/GaSbAs, II PACS: 85.30.Pq, 85.30.De 1 InP (HBT), InP/InGaAs HBT(SHBT), InGaAs,,,, InP HBT(DHBT). InP/InGaAs/InP DHBT 1(a), InP/InGaAs/InGaAs SHBT, InP/InGaAs/InP DHBT,, HBT. DHBT BC,, GaSbAs InP/GaSbAs/InP DHBT [1]. InP/GaSbAs/InP DHBT 1(b), I DHBT, InP/GaSbAs/InP DHBT II,, I DHBT, [2]. I InP/InGaAs/InP DHBT, II InP/GaSbAs/InP DHBT, InP GaSbAs, [3],,, I * 2009 ( : FMI2009-08), ( : 09C959), ( : 2010TY2003) ( : LY12F04003). E-mail: zhoushl@zjut.edu.cn c 2012 Chinese Physical Society http://wulixb.iphy.ac.cn 128501-1
II InAlAs/GaSbAs/InP DHBT I II DHBT, 1(c) InAlAs/GaSbAs/InP DHBT. 1, - II, SHBT I DHBT ; - II,,,, - I,,,. II DHBT [4 9], I II DHBT, - InAlAs InP/InAlAs/GaSbAs/InP DHBT, InP InAlAs, [9]. - (thermionic-fielddiffusion) InAlAs/GaSbAs/InP InP/GaSbAs/InP DHBT. 2,, -. - J n = qµ n n Φ n, (1) J p = qµ p p Φ p, (2) 1 DHBT (a) InP/InGaAs/InP DHBT ; (b) InP/GaSbAs/InP DHBT ; (c) InAlAs/GaSbAs/InP DHBT Φ n, Φ p. x = x j,. ;,. WKB [10,11] J n,i = q ν n 4 J p,i =q ν p 4 ( exp [ [ n(x j ) n(x+ j ) E ) ] c (1 + δ n ), (3) kt ) ], (4) p(x j ) p(x+ j ) exp( E v kt ν n ν p, 1/4 ; δ n Npn [11]. [12], - HBT J E J C J B 128501-2
. J p (x 4 ), II DHBT J E, J C J B, J p (x 4 ) J p (x 1 ), J p (x 1 ) [12]. HBT, Fermi-Dirac (BGN). BGN, Jain-Roulston, BGN [13 15]., : Shockley-Read-Hall(SRH), Auger [16]. 3 II DHBT -,,, DHBT SHBT DHBT, Yi [17] Oon Sim Ang DHBT SHBT [18]. Yi [19] InAlAs/InGaAs HBT, InP HBT, : InAlAs 145 nm, 5 10 17 cm 3 ; InGaAs 80 nm, 2 10 19 cm 3 ; InGaAs 700 nm, 1 10 16 cm 3. 2, InP HBT. - II DHBT. DHBT 1, ; E- B B-C II InP/GaAsSb/InP DHBT, E-B I B-C II In- AlAs/GaAsSb/InP DHBT. 100 nm, 3 10 17 cm 3 ; GaSbAs 80 nm, 5 10 19 cm 3 ; InP 600 nm, 2 10 16 cm 3. 3 DHBT Gummelpoon, : DHBT, 3 InAlAs/GaSbAs/InP DHBT (, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT 2 3 ), InP/GaSbAs/InP DHBT ( V BE = 0.3 V, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT 25 ), InAlAs/GaSbAs/InP DHBT. 2 InAlAs/InGaAs DHBT J C, J B Gummel-poon (V CB = 0) 1 DHBT InP or In 0.48 Al 0.52 As Ga 0.51 Sb 0.49 As InP /nm 100 80 600 /cm 3 3 10 17 5 10 19 2 10 16 4 DHBT I-V, : InP/GaSbAs/InP DHBT, V CE, InP/GaSbAs/InP DHBT,, In- AlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT ;, InAlAs/GaSbAs/InP DHBT, 128501-3
V CE,,,, [12] ; J c V ce Jb=const, InAlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT,, DHBT [20].,, [4] f T = 1 J C 2π Q T. (5) Vce=const 5 f T, I E-B InAlAs/GaSbAs/InP DHBT,. 5 J c GaSbAs DHBT f T 3 (V CB = 0) GaSbAs DHBT J C, J B Gummel-poon 4 4 GaSbAs DHBT I-V f T HBT DHBT,,. DHBT E-B B-C II DHBT, : InAlAs/GaSbAs/InP DHBT, In- AlAs/GaSbAs/InP DHBT InP/GaSbAs/InP DHBT, :,, I E-B II B-C DHBT. 128501-4
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Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT Zhou Shou-Li 1) Yang Wan-Chun 2)3) Ren Hong-Liang 1)2) Li Jia 1) 1) ( College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China ) 2) ( State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ) 3) ( College of Information Engineering, Xiangtan University, Xiangtan 411105, China ) ( Received 7 September 2011; revised manuscript received 31 October 2011 ) Abstract The characteristics of a double heterojunction bipolar transistor(dhbt) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(e-b) heterojunction and base-collector(b-c) heterojunction. Based on thermionic-fielddiffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-i E-B junction and a type-ii B-C junction and the later has a type-ii E-B junction and a type-ii B-C junction. The simulation results show that DHBT with a type-i E-B junction and a type-ii B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage. Keywords: InAlAs/GaSbAs, InP/GaSbAs, II-type DHBT PACS: 85.30.Pq, 85.30.De * Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI2009-08), the Hunan Province Education Department (Grant No. 09C959), the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003), and the Natural Science Foundation of Zhejiang Province (Grant No. LY12F04003). E-mail: zhoushl@zjut.edu.cn 128501-6