V DS T jmax G PG-TO262 G FP SP T jmax. Gate source voltage static V GS V GS ± ± Power dissipation, T C = 25 C P tot G-TO220 C3 T C V DD

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Transcript:

V DS T jmax G Ω GFP G2 G-TO220 P-TO220-3-31 1 2 3 G-TO220 C3 G PG-TO262 GFP SP000216354 T C T C t p T jmax V DD T jmax E AR V DD T jmax Gate source voltage static V GS V GS ± ± Power dissipation, T C = 25 C P tot Reverse diode dv/dt 7) dv/dt 15 V/ns Rev. 3.2 Page 1 2018-02-12

V DS T j R thjc R thja wavesoldering V (BR)DSS V GS V GS µ, V V DS V GS T j T j V GS V DS V GS T j T j R G Ω Rev. 3.2 Page 2 2018-02-12

3 Transconductance g fs V DS Input capacitance C iss V GS V DS Output capacitance C oss f Reverse transfer capacitance C rss V GS V DS Turn-on delay time t d(on) V DD V GS R G ΩT j 5 C Rise time t r Turn-off delay time t d(off) Fall time t f Gate to source charge Q gs V DD Gate to drain charge Q gd V DD V GS V DD 0 J-STD20 and JESD22 EARf C oss V DS C oss V DS 7 ISD <=I D, di/dt<=400a/us, V DClink =400V, V peak <V BR, DSS, T j <T j,max. Identical low-side and high-side switch. Rev. 3.2 Page 3 2018-02-12

Inverse diode direct current, pulsed T C I SM V GS Reverse recovery time t rr V R Reverse recovery charge Q rr di F /dt Peak reverse recovery current I rrm T j I Rev. 3.2 Page 4 2018-02-12

3 T C P tot T C Ptot Ptot T C T C T C 2 10 A V DS T C 1 10 ID 0 10-1 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC -2 10 10 0 10 1 10 2 V 10 3 V DS V DS Rev. 3.2 Page 5 2018-02-12

t p t p t p V DS T j V GS t p V DS T j V GS V DS V DS Rev. 3.2 Page 6 2018-02-12

f T j V GS Ω V GS Ω T j V GS VGS V GS Rev. 3.2 Page 7 2018-02-12

3 T j V DS V GS R G Ω IF R G T j V DS V GS di/dtr G T j V DS V GS di/dt Ω R G Ω R G Rev. 3.2 Page 8 2018-02-12

dv/dtr G T j V DS V GS T j V DS V GS R G Ω P dv/dt Ω R G T j R G V DS V GS P T j Ω R G Rev. 3.2 Page 9 2018-02-12

T j V DD V (BR)DSS T j V(BR)DSS T j T j f E AR V DS V GS f V DS Rev. 3.2 Page 10 2018-02-12

C oss fv DS V DS Rev. 3.2 Page 11 2018-02-12

SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 Page 12 2018-02-12

SPP20N60C3 SPI20N60C3, SPA20N60C3 Outline PG TO220 FullPAK 1 2 3 MILLIMETERS DIMENSIONS MIN. MAX. DOCUMENT NO. A 4.50 4.90 Z8B00003319 A1 2.34 2.85 A2 2.42 2.86 REVISION b 0.65 0.90 07 b1 0.95 1.38 b2 0.95 1.51 SCALE 5:1 b3 0.65 1.38 0 1 2 3 4 5mm b4 0.65 1.51 c 0.40 0.63 D 15.67 16.15 D1 8.97 9.83 EUROPEAN PROJECTION E 10.00 10.65 e 2.54 H 28.70 29.75 L L1 øp 12.78 2.83 3.00 13.75 3.45 3.30 ISSUE DATE Q 3.15 3.50 27.01.2017 Rev. 3.2 Page 13 2018-02-12

SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO262-3-1/PG-TO262-3-21 (I²-PAK) Rev. 3.2 Page 14 2018-02-12

600VCoolMOSªC3PowerTransistor SPx20N60C3 RevisionHistory SPx20N60C3 Revision:2018-02-27,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 3.2 2018-02-27 Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.3.2,2018-02-27