Small Signal Transistor and JFET Selection Guide
|
|
|
- Κύμα Ζωγράφος
- 6 χρόνια πριν
- Προβολές:
Transcript
1 Small Signal Transistor and JFET Selection Guide August 2002 Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics Across the board. Around the world.
2 Small Signal Transistor and JFET Selection Guide August 2002 Table of Contents Product General Purpose Transistors SOT-623F SOT-323 SOT-23 SuperSOT TM -3 SOT-89 SOT-223 D-PAK S TO-226AE L Darlington Transistors SOT-23 SuperSOT TM -3 SOT-223 TO-226AE Digital Transistors SOT-323 SOT-23 S page Product Hybrid Transistors SOT-563F SC70-6 SuperSOT TM -6 SOIC-6 RF Amplifier Transistors SOT-23 S JFETs SOT-623F SOT-323 SOT-23 SuperSOT TM -3 SOT-223 S Packages Surface Mount (SOT-623F, SOT-563F, SOT-323, SC70-6) Surface Mount (SOT-23, SuperSOT -3, SuperSOT TM TM -6, SOT-89) Surface Mount (SOT-223, SOIC-6) Through Hole (S,, TO-226AE, L) page
3 General Purpose Transistors hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE SOT-623F Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) FJZ945 FJZ B/E/C SOT-323 FJX B/E/C FJX B/E/C FJX B/E/C FJX2222A B/E/C FJX945 FJX B/E/C FJX2907A B/E/C SOT-23 BSV B/E/C MMBT B/E/C MMBT2369A B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C KST B/E/C MMBT B/E/C KST424 KST B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C KSC3265 KSA B/E/C BCX B/E/C BC88 BC B/E/C MMBT B/E/C KST B/E/C MMBT B/E/C BC B/E/C BC B/E/C BC B/E/C BC B/E/C KST B/E/C KST B/E/C KSC B/E/C KSA B/E/C BSR B/E/C MMBT B/E/C BCW60A BCW6A B/E/C BCW60B B/E/C BCW6B B/E/C BCW60C BCW6C B/E/C BCW60D BCW6D B/E/C BCW B/E/C BCW B/E/C BCW B/E/C BCW B/E/C BCW65C B/E/C BSR7A BSR8A B/E/C KST B/E/C KST B/E/C MMBT B/E/C MMBT B/E/C BSR8B B/E/C KST B/E/C KST B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C KST2222A B/E/C BSR B/E/C BSR B/E/C MMBT B/E/C BSS79C B/E/C MMBT2222A B/E/C MMBT B/E/C BCW B/E/C 2
4 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE SOT-23 (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) BC B/E/C BC B/E/C BC B/E/C BC B/E/C BCX70G BCX7G B/E/C BCX70H B/E/C BCX70J BCX7J B/E/C BCX70K BCX7K B/E/C BCW B/E/C MMBT B/E/C MMBT B/E/C MMBT00A B/E/C MMBT200A B/E/C BCX9 BCX B/E/C BC87 BC B/E/C BCW68G B/E/C BCW66G B/E/C KST B/E/C KST B/E/C KSC623 KSA B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C KST B/E/C MMBT B/E/C BCW B/E/C KST B/E/C KST B/E/C MMBTA B/E/C BCV B/E/C BCV B/E/C MMBTA B/E/C BSR B/E/C KST2907A B/E/C MMBT B/E/C MMBT B/E/C MMBT2907A B/E/C BC B/E/C BC B/E/C BSS B/E/C KST B/E/C KST B/E/C MMBTA B/E/C MMBTA B/E/C MMBT B/E/C BSS B/E/C FJV B/E/C FJV B/E/C KST B/E/C KST B/E/C MMBT B/E/C MMBT B/E/C KST B/E/C MMBT B/E/C KST B/E/C KST B/E/C KST B/E/C KST B/E/C MMBTA B/E/C MMBTA B/E/C SuperSOT -3 FSB B/E/C FSB B/E/C FMMT B/E/C FMMT B/E/C FSB B/E/C 3
5 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE SuperSOT -3 (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) FSB B/E/C FSBCW B/E/C FSB B/E/C FSB560A B/E/C FSB660A B/E/C FSB B/E/C FSB B/E/C SOT-89 KSC B/C/E FJC B/C/E FJC B/C/E KSB B/C/E KSD B/C/E KSB B/C/E KSC2883 KSA B/C/E FJC B/C/E FJC B/C/E KSC288 KSA B/C/E SOT-223 BCP68 BCP B/C/E NZT B/C/E FZT649 FZT B/C/E NZT B/C/E NZT B/C/E PZT B/C/E PZT B/C/E PZT2222A B/C/E NZT675 NZT B/C/E FZT790A B/C/E BCP54 BCP B/C/E PZT2907A B/C/E BCP B/C/E NZT B/C/E BCP B/C/E NZT560A B/C/E NZT660A B/C/E NZT560 NZT B/C/E NZT65 NZT B/C/E PZTA B/C/E PZTA B/C/E FZT B/C/E NZT B/C/E NZT B/C/E BCP56 BCP B/C/E NZT B/C/E PZTA B/C/E PZTA B/C/E FJT B/C/E D-PAK NZD560A B/C/E S KSA E/C/B KSC E/C/B KSC E/C/B KSA E/C/B KSD020 KSB E/C/B KSD02 KSB E/C/B KSA E/C/B KSC E/C/B KSC E/C/B KSA E/C/B PN E/B/C KSC E/C/B 4
6 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) PN E/B/C PN E/B/C PN E/B/C 2N E/B/C PN2369A E/B/C PN E/B/C 2N E/B/C ST E/B/C 2N E/B/C BC38C E/B/C KSD26 KSA E/B/C SS903 SS E/B/C BC E/C/B BC E/C/B FJN E/C/B FJN E/C/B KSD E/C/B KSC E/B/C BC C/B/E BC C/B/E 2N E/B/C KSP E/B/C KSP E/B/C MPS E/B/C BC C/B/E BC C/B/E 2N E/B/C 2N E/B/C MPS E/B/C MPS E/B/C KSD E/B/C KSA E/B/C 2N E/C/B 2N E/C/B 2N E/C/B 2N E/C/B PN E/B/C MPS E/B/C 2N E/C/B 2N339A E/C/B 2N E/C/B 2N E/C/B KSC E/C/B MPS E/B/C BC338 BC C/B/E PN E/B/C PN3638A E/B/C KSB564A E/B/C MPS E/B/C PE E/B/C SS8050 SS E/B/C SS E/B/C KSC E/B/C 2N E/B/C BC C/B/E BC83C C/B/E BC83LC E/C/B BC C/B/E BC C/B/E BC C/B/E 2N E/B/C PN E/B/C 2N E/B/C MPS E/B/C BC84LC E/C/B PN E/B/C 2N E/C/B 5
7 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) BC84C C/B/E BC84L E/C/B PN E/B/C BC C/B/E 2N E/C/B BC C/B/E BC C/B/E PN E/B/C MPS E/B/C 2N E/C/B KSD47A E/B/C PN E/B/C 2N E/B/C 2N E/B/C PN E/B/C 2N E/B/C 2N E/B/C MPS E/B/C 2N E/C/B MPSA E/B/C PN E/B/C TIS C/B/E PN E/B/C 2N E/B/C 2N E/B/C 2N E/B/C 2N E/B/C KSP2222A E/B/C TIS C/B/E MPS E/B/C PN E/B/C PN E/B/C KS E/B/C MPS E/B/C PN2222A E/B/C 2N E/B/C BC C/B/E MPSA E/B/C SS E/B/C BC C/B/E BC C/B/E BC C/B/E BC C/B/E BC C/B/E SS E/B/C PN E/B/C KSC E/B/C KSA E/B/C PN E/B/C PN E/B/C PN E/B/C PN00A E/B/C PN200A E/B/C BCX C/B/E PN E/B/C BC C/B/E BC C/B/E BC635 BC E/C/B BCX C/B/E 2N E/B/C 2N E/B/C BC82LB E/C/B BC22B C/B/E BC22LB E/C/B 2N E/B/C KSC E/C/B KSA E/C/B 6
8 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) KSC E/C/B KSC E/B/C KSA E/B/C 2N6428A E/B/C BC C/B/E BC22L E/C/B 2N E/C/B 2N E/C/B BC C/B/E BC82B C/B/E BC82L E/C/B BC82LA E/C/B KSD E/C/B KSB E/C/B 2N E/B/C PN E/B/C KSP05 KSP E/B/C MPSA E/B/C PN E/B/C PN4250A E/B/C MPSA E/B/C KSP8098 KSP E/B/C MPS E/B/C MPS E/B/C 2N3859A E/C/B KSP2907A E/B/C KSC E/B/C KSA E/B/C PN E/B/C PN E/B/C PN2907A E/B/C PN E/B/C KSB6A E/C/B KSD66A E/C/B BC637 BC E/C/B BC337A BC327A C/B/E MPS E/B/C MPS E/B/C BC C/B/E BC C/B/E 2N E/B/C KSP06 KSP E/B/C MPSA E/B/C MPSA E/B/C KSP8099 KSP E/B/C PN E/B/C BC639 BC E/C/B BC E/C/B 2N E/B/C MPSL E/B/C KSC E/C/B KSA E/C/B MPSL E/B/C 2N E/B/C 2N E/B/C KSC E/B/C 2N E/B/C KSA E/B/C 2N E/B/C MPSA E/B/C MPSA E/B/C KSP E/B/C KSP E/B/C 2N E/B/C 2N E/B/C KSP E/B/C KSP E/B/C 7
9 General Purpose Transistors (continued) hfe VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min VCE (continued) Saturation Voltage VCE(sat) IB VBE(sat) (Max) ft(min) (MHz) Lead array (/2/3) MPSA E/B/C MPSA E/B/C 2N E/B/C 2N E/B/C KSP E/B/C 2N E/B/C 2N E/B/C KSE E/C/B KSP E/B/C KSP E/B/C KSA E/C/B TO-226AE ZTX E/B/C TN6726A E/B/C FPN430A E/B/C FPN E/B/C TN674A E/B/C MPSW E/B/C FPN530A E/B/C FPN630A E/B/C FPN E/B/C FPN E/B/C FPN330A E/B/C FPN E/B/C ZTX749A E/B/C TN229A E/B/C MPSW E/B/C TN675A TN6727A E/B/C TN6705A E/B/C TN2907A E/B/C TN6728A E/B/C TN676A E/B/C FPN560A E/B/C FPN E/B/C FPN660A E/B/C FPN E/B/C TN202A E/B/C TN5320A E/B/C MPSW E/B/C MPSW E/B/C TN309A E/B/C TN4033A E/B/C TN6729A E/B/C TN677A E/B/C TN6707A E/C/B ZTX E/B/C TN678A E/B/C TN545A E/B/C TN3440A E/B/C TN679A E/B/C L KSC E/C/B KSC2328A KSA928A E/C/B KSA E/C/B KSC233 KSA E/C/B KSC236 KSA E/C/B KSC E/C/B KSA E/C/B KSC E/C/B KSA E/C/B KSA E/C/B KSC E/C/B KSC2330A E/C/B 8
10 Darlington Transistors VCEO VCBO VEBO Ic(Max) NPN PNP (A) Min Max VCE VCE(sat) IB VBE(sat) (Max) Lead array (/2/3) KST B/E/C KST B/E/C KST B/E/C KST B/E/C MMBTA3 MMBTA B/E/C BCV27 BCV B/E/C MMBTA4 MMBTA B/E/C MMBT B/E/C SuperSOT -3 MMBTA B/E/C SOT-223 PZTA4 PZTA B/C/E BSP B/C/E BSP B/C/E BSP B/C/E PZTA B/C/E NZT B/C/E NZT B/C/E PZTA B/C/E PZTA B/C/E KSP2 KSP E/B/C MPSA E/B/C 2N E/C/B KSP3 KSP E/B/C KSP4 KSP E/B/C BC C/B/E MPSA3 MPSA E/B/C MPSA4 MPSA E/B/C MPSA E/B/C KSP25 KSP E/B/C 2N E/C/B 2N E/C/B 2N E/B/C 2N E/B/C BC C/B/E KSP26 KSP E/B/C KSP27 KSP E/B/C MPSA E/B/C BSR E/C/B MPSA E/B/C MPSA E/B/C MPSA E/B/C 2N E/C/B 2N E/B/C TO-226AE TN6725A E/B/C 2N E/B/C hfe Saturation Voltage ft(min) (MHz) 9
11 Digital Transistors R R2 hfe Saturation Voltage VCEO VCBO VEBO Ic(Max) Lead array NPN PNP (kω) (kω) Min VCE IB (A) (/2/3) (Max) SOT-323 FJX3009R FJX4009R B/E/C FJX300R FJX400R B/E/C FJX30R FJX40R B/E/C FJX302R FJX402R B/E/C FJX305R B/E/C FJX303R FJX403R B/E/C FJX300R FJX400R B/E/C FJX3005R FJX4005R B/E/C FJX304R FJX404R B/E/C FJX3002R FJX4002R B/E/C FJX3006R FJX4006R B/E/C FJX3003R FJX4003R B/E/C FJX3007R FJX4007R B/E/C FJX3008R FJX4008R B/E/C FJX3004R FJX4004R B/E/C SOT-23 FJV309R FJV409R B/E/C FJV30R FJV40R B/E/C FJV3R FJV4R B/E/C FJV32R FJV42R B/E/C FJV35R B/E/C FJV33R FJV43R B/E/C FJV30R FJV40R B/E/C FJV305R FJV405R B/E/C FJV34R FJV44R B/E/C FJV302R FJV402R B/E/C FJV306R FJV406R B/E/C FJV303R FJV403R B/E/C FJV307R FJV407R B/E/C FJV308R FJV408R B/E/C FJV304R FJV404R B/E/C S FJNS3209R FJNS4209R E/C/B FJNS320R FJNS420R E/C/B FJNS32R FJNS42R E/C/B FJNS322R FJNS422R E/C/B FJNS325R E/C/B FJNS323R FJNS423R E/C/B FJNS320R FJNS420R E/C/B FJNS3205R FJNS4205R E/C/B FJNS324R FJNS424R E/C/B FJNS3202R FJNS4202R E/C/B FJNS3206R FJNS4206R E/C/B FJNS3203R FJNS4203R E/C/B FJNS3207R FJNS4207R E/C/B FJNS3208R FJNS4208R E/C/B FJNS3204R FJNS4204R E/C/B FJN3309R FJN4309R E/C/B FJN330R FJN430R E/C/B FJN33R FJN43R E/C/B FJN332R FJN432R E/C/B FJN335R E/C/B FJN333R FJN433R E/C/B FJN330R FJN430R E/C/B FJN3305R FJN4305R E/C/B FJN334R FJN434R E/C/B FJN3302R FJN4302R E/C/B FJN3306R FJN4306R E/C/B FJN3303R FJN4303R E/C/B FJN3307R FJN4307R E/C/B FJN3308R FJN4308R E/C/B FJN3304R FJN4304R E/C/B 0
12 Hybrid Transistors SOT-563F Configuration VCEO VCBO Min VCE VCE(sat) (Max) Saturation IB VBE(sat) (Max) FJYF2906 PNP Dual SC70-6 FFB2227A NPN PNP Dual FFB3946 NPN PNP Dual FFB3904 NPN Dual FFB2222A NPN Dual BC847S NPN Dual FFB3906 PNP Dual BC857S PNP Dual FFB2907A PNP Dual SuperSOT -6 VEBO Ic(Max) (A) FMB2227A NPN PNP Dual FMB3946 NPN PNP Dual FMBA4 NPN Dual FMB3904 NPN Dual FMB2222A NPN Dual FMB00 NPN Dual FMBA06 NPN Dual FMB555 NPN Dual FMBS549 PNP Dual FMB3906 PNP Dual FMB857B PNP Dual FMB200 PNP Dual FMB2907A PNP Dual FMBA56 PNP Dual SOIC-6 MMPQ6700 NPN PNP Quad MMPQ2222 NPN Quad MMPQ3904 NPN Quad MMPQ2222A NPN Quad FTM3725 NPN Quad MMPQ3906 PNP Quad MMPQ2907 PNP Quad MMPQ2907A PNP Quad hfe ft(min) (MHz)
13 RF Amplifier Transistors hfe VCEO VCBO VEBO ft(min) Ic(Max) NPN PNP (MHz) (A) Min VCE SOT-23 VCE(sat) (Max) Saturation IB VBE(sat) (Max) Lead array (/2/3) KST B/E/C MMBT B/E/C MMBT B/E/C MMBT B/E/C KSC B/E/C KSC B/E/C KSC B/E/C MMBTH B/E/C KSC B/E/C KST B/E/C MMBTH B/E/C MMBTH B/E/C KSC B/E/C KSC B/E/C MMBTH B/E/C KST B/E/C MMBTH0RG B/E/C MMBTH B/E/C S KSC E/C/B KSC E/C/B KSC E/C/B 2N E/C/B KSP E/B/C MPS E/B/C PN B/E/C PN E/B/C PN E/B/C SS E/B/C KSC E/C/B 2N E/B/C KSC E/B/C KSC E/B/C MPSH B/E/C BF C/E/B KSC E/B/C BF C/E/B FPNH E/B/C KSP B/E/C MPSH B/E/C MPSH B/E/C KSC E/B/C KSC E/B/C KSC B/E/C MPSH B/E/C KSP B/E/C MPSH B/E/C BF C/E/B 2
14 JFETs SOT-623F Configuration BVgss PD (mw) Min IDSS VGS(off) Gfs VDS Min Typ ID VDS Min (mmhos) Typ (mmhos) Max (mmhos) Lead array (/2/3) FJZ594J N-Ch D/S/G SOT-323 FJX597JH N-Ch D/S/G SOT-23 KSK2 N-Ch D/G/S KSK595 N-Ch D/S/G MMBF5484 N-Ch D/S/G MMBF5485 N-Ch D/S/G MMBFJ2 N-Ch D/S/G MMBF5486 N-Ch D/S/G MMBFJ22 N-Ch D/S/G MMBFJ309 N-Ch D/S/G MMBF5457 N-Ch D/S/G MMBFJ30 N-Ch D/S/G MMBF5458 N-Ch D/S/G MMBF5459 N-Ch D/S/G MMBF446 N-Ch D/S/G MMBF4393 N-Ch D/S/G MMBF4392 N-Ch D/S/G MMBF439 N-Ch D/S/G MMBF446A N-Ch D/S/G MMBFJ3 N-Ch D/S/G MMBFJ2 N-Ch D/S/G MMBFJ N-Ch D/S/G MMBF47 N-Ch D/S/G MMBF48 N-Ch D/S/G MMBF49 N-Ch D/S/G BSR58 N-Ch D/S/G BSR56 N-Ch D/S/G BSR57 N-Ch D/S/G MMBFJ20 N-Ch D/S/G MMBF503 N-Ch D/S/G MMBFJ202 N-Ch D/S/G MMBF4093 N-Ch D/S/G MMBF4092 N-Ch D/S/G MMBF409 N-Ch D/S/G MMBFJ270 P-Ch D/S/G MMBFJ77 P-Ch D/S/G MMBFJ76 P-Ch D/S/G MMBFJ27 P-Ch D/S/G MMBFJ75 P-Ch D/S/G MMBF5460 P-Ch D/S/G MMBF546 P-Ch D/S/G MMBF5462 P-Ch D/S/G SuperSOT -3 MMBF5434 N-Ch D/S/G MMBFJ08 N-Ch D/S/G SOT-223 JFTJ05 N-Ch S/G/D S KSK6 N-Ch D/S/G KSK596 N-Ch S/G/D FJN598J N-Ch S/G/D 2N5484 N-Ch D/S/G J20 N-Ch D/S/G 2N5485 N-Ch D/S/G PN5434 N-Ch D/S/G J2 N-Ch D/S/G J300 N-Ch D/S/G 2N5486 N-Ch D/S/G J22 N-Ch D/S/G 2N389 N-Ch D/G/S MPF02 N-Ch D/S/G PN5432 N-Ch D/S/G 2N5555 N-Ch D/S/G J0 N-Ch D/S/G J309 N-Ch D/S/G J07 N-Ch D/S/G 2N5457 N-Ch D/S/G RDS (Ω) ID(off) (ua) 3
15 JFETs (continued) (continued) Configuration BVgss PD (mw) Min IDSS VGS(off) Gfs VDS Min Typ ID VDS Min (mmhos) Typ (mmhos) Max (mmhos) RDS (Ω) ID(off) (ua) Lead array (/2/3) J09 N-Ch D/S/G J06 N-Ch D/S/G J30 N-Ch D/S/G 2N5458 N-Ch D/S/G 2N5459 N-Ch D/S/G J08 N-Ch D/S/G J05 N-Ch D/S/G BF246B N-Ch D/G/S BF247A N-Ch G/S/D PF530-2 N-Ch D/S/G J305 N-Ch D/S/G 2N5952 N-Ch G/S/D 2N5246 N-Ch G/S/D TIS75 N-Ch G/S/D 2N595 N-Ch G/S/D 2N5245 N-Ch G/S/D J304 N-Ch D/S/G PN446 N-Ch D/S/G 2N5950 N-Ch G/S/D TIS74 N-Ch G/S/D BF256A N-Ch G/S/D BF256B N-Ch G/S/D BF256C N-Ch G/S/D BF244A N-Ch D/G/S BF245A N-Ch G/S/D BF244B N-Ch D/G/S BF245B N-Ch G/S/D 2N5247 N-Ch G/S/D BF244C N-Ch D/G/S BF245C N-Ch G/S/D TIS73 N-Ch G/S/D PN4393 N-Ch D/S/G PN4302 N-Ch D/S/G PN486 N-Ch D/S/G PN4392 N-Ch D/S/G PN4303 N-Ch D/S/G 2N5639 N-Ch D/S/G PN439 N-Ch D/S/G 2N5638 N-Ch D/S/G BF246A N-Ch D/G/S 2N5953 N-Ch G/S/D J3 N-Ch D/S/G J2 N-Ch D/S/G J N-Ch D/S/G PN47 N-Ch D/S/G PN47A N-Ch D/S/G PN48 N-Ch D/S/G PN49 N-Ch D/S/G J20 N-Ch D/S/G PF502 N-Ch D/S/G PF503 N-Ch D/S/G J202 N-Ch D/S/G PN4093 N-Ch D/S/G PN4092 N-Ch D/S/G U898 N-Ch D/S/G PN409 N-Ch D/S/G U897 N-Ch D/S/G KSK30 N-Ch S/G/D KSK7 N-Ch D/S/G 2N3820 P-Ch D/G/S J270 P-Ch D/G/S J77 P-Ch D/G/S J76 P-Ch D/G/S J27 P-Ch D/G/S P087 P-Ch D/S/G J75 P-Ch D/G/S P086 P-Ch D/S/G J74 P-Ch D/G/S 2N5460 P-Ch D/S/G 2N546 P-Ch D/S/G 2N5462 P-Ch D/S/G 4
16 Packages Surface Mount SOT-623F SOT-563F SOT-323 SC70-6 5
17 Packages (continued) Surface Mount (continued) SOT-23 SuperSOT TM -3 Through-Hole Dimensions in Inches[Millimeters] SuperSOT TM -6 SOT-89 Dimensions in Inches[Millimeters] 6
18 Packages (continued) Surface Mount (continued) SOT-223 SOIC-6 7
19 Packages (continued) Through Hole S Through-Hole TO-226AE L 8
20 For a complete listing of sales representatives and sales offices, visit /cf/sales_contacts/ For datasheets, application notes, samples and more, visit Americas Customer Response Center Fairchild Semiconductor 222 Las Colinas Boulevard Suite 400 Irving, TX USA Tel: Fax: China Fairchild Semiconductor Hong Kong Ltd. Shenzhen Representative Office Room 307, Shun Hing Square Di Wang Commercial Centre 5002 Shen Nan Road East Shenzhen, P.R.C. Tel: Fax: Fairchild Semiconductor (Shanghai) Company Ltd. Puxi Liaison Office Room 2208, Kerry Centre No. 55 Nanjing West Road Jingan, Shanghai P.R.C. Tel: Fax: /9 Finland Fairchild Semiconductor Itakatu 3 D 23 FIN Helsinki FINLAND Tel: Fax: France Fairchild Semiconductor SAS Immeuble Dublin 2, place Gustave Eiffel Silic 227 F Rungis Cedex FRANCE Tel: Fax: Germany Fairchild Semiconductor GmbH Oskar-von-Miller-Strasse 4e D Fürstenfeldbruck GERMANY Tel: Fax: Hong Kong Fairchild Semiconductor Hong Kong Ltd. 9/F, CMG Asia Tower The Gateway II 5 Canton Road Tsimshatsui, Kowloon HONG KONG Tel: Fax: Italy Fairchild Semiconductor Srl Via Carducci, Sesto San Giovanni (MI) ITALY Tel: Fax: Japan Fairchild Semiconductor Japan Ltd. 6F Bancho-Kaikan 2- Gobancho, Chiyoda-ku Tokyo, JAPAN Tel: Fax: Fairchild Semiconductor Japan Ltd. Osaka Office Shin-Osaka Meiko Building 8F 4-3-2, Miyahara, Yodogawa-ku Osaka, JAPAN Tel: Fax: Korea Fairchild Korea Semiconductor, Ltd. Bucheon Office 82-3, Dodang-Dong Wonmi-gu, Bucheon Gyounggi-Do, KOREA Tel: Fax: Fairchild Korea Semiconductor, Ltd. Suwon Office 6th Floor Song-I Building 976-2,Youngtong-dong Paldal-gu, Suwon-si Gyunggi-do, KOREA Tel: Fax: Fairchild Korea Semiconductor, Ltd. Gumi Office 4F Saero-net Building 274-9, Songjeong-dong Gumi-si, Gyungsang-buk-do, KOREA Tel: Fax: Mexico Fairchild Semiconductor Av. Vallarta #6503 Flr. 4 Col. Cd Granjas Zapopan Jalisco 4500 MEXICO Tel: Fax: Singapore Fairchild Semiconductor Asia Pacific Pte. Ltd. 350 Orchard Road #20-0/03 Shaw House SINGAPORE Tel: Fax: /3 Sweden Fairchild Semiconductor Industrivagen 7 S-748 Solna SWEDEN Tel: Fax: Taiwan Fairchild Semiconductor Hong Kong Ltd. Taiwan Branch 8/F, No.67 Tun Hwa North Road Taipei TAIWAN, R.O.C. Tel: Fax: UK Fairchild Semiconductor Ltd. Interface House Interface Business Park Wootton Bassett Swindon SN4 8QE UNITED KINGDOM Tel: Fax: The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks: ACEx, Bottomless, CoolFET, CROSSVOLT, DOME, EcoSPARK, E 2 CMOS, EnSigna, FACT, FACT Quiet Series, FAST, FASTr, FRFET, GlobalOptoisolator, GTO, HiSeC, ISOPLANAR, LittleFET, MicroFET, MicroPak, MICROWIRE, OPTOLOGIC, OPTOPLANAR, PACMAN, POP, Power247, PowerTrench, QFET, QS, QT Optoelectronics, Quiet Series, SILENT SWITCHER, SMART START, SPM, Stealth, SuperSOT -3, SuperSOT -6, SuperSOT -8, SyncFET, TinyLogic, TruTranslation, UHC, UltraFET, VCX Lit. No Fairchild Semiconductor Corporation, All Rights Reserved
Transistor Products BC846WU NPN BCE BC847WU NPN
Transistor Products NPN Maximum Ratings Electrical Characteristics (Ta=25 O C) BC846WU NPN 80 65 100 225 110 800 2 5 0.25 10 00 BCE BC847WU NPN 50 45 100 225 110 800 2 5 0.25 10 00 BCE 0.2 MMBT2222AWU
Low voltage power bipolar transistors
Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number O CES C P tot CE [W] min SOT-89 SOT23-3L SOT23-6L DPAK and PAK Part number O CES C P tot CE [W]
Electrical characteristics Applications VGDO (V) Yfs1 (ms) 2.5 TYP AF low noise amplification 2SK
Small Signal FET SK type (Junction type) s VGDO ID (ma) PT (mw) Yfs (ms) IDSS (ma) SK. TYP.. TYP. HF amplification SK.. AF amplification SK6 0 00 8 AF low noise amplification SK63 00 9.0 8.0 AF low noise
Discrete & Power Devices
Technical portal and online community for Design Engineers - www.element14.com 41 Discrete & Power Devices Page Page Bridge Rectifiers... 531 Darlington... 435 Diodes IGBT... 438 Schottky... 503 JFET...
PNJ08 E-01. Pin Jacks
ELECTRONIC COMPONENTS PNJ08 E-01 s Contents Contents... 1 Product Lineup... 2 - Single s Horizontal Type... - 6 Vertical Type... 7 Dual s Horizontal Type... 8 Vertical Type... 9-10 Triple s Horizontal
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
Power Modules. Product Selector
Power Modules Product Selector E DC/DC Converters W / 0.A DIL 24 PKV 110 PI 211 PI 1 PI 1 PI 222 PI 21 PI 2 PI 110 PI 211 PI 1 PI 1 PI 222 PI 21 PI 2 PI 9- -72 1 ± ± ±1 1 ± ± ±1 0. 0. 0.2 0. 0.2 0. 0.
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
LCD Specification. LS060S2UD01 LCD Module. Product Specification March Technical Document. LCD Group
Technical Document LCD Specification LCD Group LS060S2UD01 LCD Module Product Specification March 2010 SVGA (Portrait) Monochrome HR-TFT Transflective Memory LCD featuring FPC connector, 16% reflectivity
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
*Το σημείωμα βασίζεται και σε στοιχεία από προγενέστερη έρευνα για την αγορά γούνας από την κα. Γεωργία Βελέντζα, Γραμματέα ΟΕΥ Γ
ΠΡΕΣΒΕΙΑ ΤΗΣ ΕΛΛΑΔΟΣ ΣΤΟ ΠΕΚΙΝΟ ΓΡΑΦΕΙΟ ΟΙΚΟΝΟΜΙΚΩΝ ΚΑΙ ΕΜΠΟΡΙΚΩΝ ΥΠΟΘΕΣΕΩΝ Πεκίνο, Μάρτιος 2013 ΣΗΜΕΙΩΜΑ ΓΙΑ ΤΗΝ ΑΓΟΡΑ ΓΟΥΝΑΣ ΣΤΗ Λ.Δ. ΚΙΝΑΣ Πίνακας Περιεχομένων 1. Οικονομικό Περιβάλλον... 1 2. Παραγωγή:
POWER OVER ETHERNET (PoE) MAGNETICS
RoHS-5 peak reflow temperature rating 35 C RoHS-6 peak reflow temperature rating 45 C IEEE 80.3af/ANSI X3.63 compliant performance Designed for IP phone or switch applications Electrical Specifications
RUILONGYUAN. Regulator Circuit Back. Product Series. Regulator Circuit Back
Regulator Circuit Back Product Series Regulator Circuit Back 126-127 RUILONGYUAN Regulator Circuit Back Continuous Total Maximum Otput Input Line Regulation Output Quiescent PD IO Vi VIROC Max W MA V V
TAIWAN SEMICONDUCTOR. - Standard Linear - Low Drop Out - CMOS Low Drop Out. - Low Voltage - High Voltage - High Voltage for Automotive
Analogue IC Product Portfolio Contents Page Linear Regulator 2 - Standard Linear - Low Drop Out - CMOS Low Drop Out Ultra Low Drop Out Regulator 3, 4 - Low - High - High for Automotive Reference 4 Switching
Data Sheet High Reliability Glass Epoxy Multi-layer Materials (High Tg & Low CTE type) Laminate R-1755V Prepreg R-1650V
Data Sheet High Reliability Glass Epoxy Multi-layer Materials (High Tg & Low CTE type) Laminate R-1755V Prepreg R-1650V Nov. 2015 No.15111336 Specification / Laminate R-1755V No.; 15111336-1 Property Units
High Speed, Low Loss Multi-layer Materials
Data Sheet High Speed, Low Loss Multilayer Materials Laminate R5725 Prepreg R5620 UL/ANSI IPC4101 Slash Sheet FR4 Primary:/91 Secondary:/102(*) Jul. 2013 No.13070132 No.; 130701321 Property Units Test
Product Selection Tables. 2005 SMD Resistors. Yageo brand
eo.com Product Selection Tables 2005 SMD Resistors Yageo brand Table of Contents www.yageo.com Table of contents Resistor chips, General purpose / Yageo brand 2 General purpose, 0201-0805 2 General purpose,
Miniature Jacks Pin Jacks JAC09 E-03
Miniature Jacks Pin Jacks JAC09 E-0 Contents Contents... Miniature Jacks... Product Lineup... -. DIA Miniature Jacks SMT... - 8 Dip... 9 -. DIA Miniature Jacks SMT... - Dip... Dual Type Miniature Jacks
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
Table of Contents.
Table of Contents Table of Contents 2 BJT 4 Bipolar Junction 4 Line-up (PNP ) 4 ~ 7 Line-up (NPN ) 8 ~ 13 General Purpose 14 ~ 20 Complex General Purpose 21 ~ 22 High Voltage 23 ~ 24 Low Noise 25 Audio
Si Photo-transistor Chip TKA124PT
Si Photo-transistor ChipTKA124PT Ambient Light Sensor 1. Scope The specification applies to NPN silicon photo-transistor chips. TypeTKA124PT-L-8-N. (Ambient Light) 2. Structure NPN planar type. 3. Size
GENERAL PURPOSE TRANSFORMERS 2 Watt Pulse, Electrostatically Shielded, 500 mw Pulse, RF Pulse, and Control Transformers
Watt Pulse, Electrostatically Shielded, 00 mw Pulse, RF Pulse, and Control Transformers Wide range of inductors and turns ratios Suitable for a variety of applications High flux density capability Available
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
General-Purpose Small-Signal Transistors
General-Purpose Small-Signal Transistors Low-Frequency Small-Signal Amplification z 208 Low-Frequency Amplification, Switching, Constant-Current Load Impedance Conversion z 208 High-Speed Switching MOSFETs
Suva refrigerants. Transport Properties of Suva 410A Refrigerant. Viscosity Thermal Conductivity and Heat Capacity for the Liquid and Vapor
Product Information Suva refrigerants ART - 31 Transport Properties of Suva 410A Refrigerant Viscosity Thermal Conductivity and Heat Capacity for the Liquid and Vapor Transport Properties of Suva 410A
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Suva. refrigerants. Transport Properties of Suva 407C Refrigerant. Viscosity Thermal Conductivity and Heat Capacity for the Liquid and Vapor
Product Information Suva refrigerants ART - 26 Transport Properties of Suva 407C Refrigerant Viscosity Thermal Conductivity and Heat Capacity for the Liquid and Vapor Transport Properties of Suva 407C
Lecture 210 1 Stage Frequency Response (1/10/02) Page 210-1
Lecture 210 1 Stage Frequency Response (1/10/02) Page 2101 LECTURE 210 DC ANALYSIS OF THE 741 OP AMP (READING: GHLM 454462) Objective The objective of this presentation is to: 1.) Identify the devices,
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
Radio Frequency Technologies for Innovative Solutions
Radio Frequency Technologies for Innovative Solutions Selection Guide LDMOS IN PLASTIC HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Radio and Digital Cellular BTS Applications Freq. Pout
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Sunlord. Wire Wound SMD Power Inductors SWCS Series SWCS XXXX -XXX T. Operating Temperature: -25 ~ +105 FEATURES APPLICATIONS PRODUCT IDENTIFICATION
Wire Wound SMD Power Inductors SWCS Series Operating Temperature: -25 ~ +105 FEATURES Various high power inductors are superior to be high saturation Suitable for surface mounting equipment APPLICATIONS
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
FUJI Power Semiconductors IGBT Modules
FUJI Power Semiconductors IGBT Modules IGBT 6-pack Page 1 IGBT PIM Page 3 IGBT Standard 2-pack/1-pack Page 6 IGBT High Power Modules Page 10 IGBT IPM Page 12 IGBT Discretes Page 13 July. 2012 PMJ01Eg IGBT
TRANSISTOR. POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor
TRANSISTOR SMALL SIGNAL TRANSISTOR General Purpose Bipolar Transistor High Voltage Switching Bipolar Transistor High Speed Switching Bipolar Transistor RF Transistor High Gain Bipolar Transistor Complex
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
MCRH Series High Temp. Electrolytic Capacitors
Features: General purpose. Wide CV value range. Safety vent construction products, ECRH series are guaranteed for 000 hours at C. High temperature radial leaded electrolytic. Supplied loose with straight
SMALL SIGNAL DISCRETE SEMICONDUCTORS
Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 www.linearsystems.com
2-1. Power Transistors. Transistors for Audio Amplifier. Transistors for Humidifier. Darlington Transistors. Low VCE (sat) High hfe Transistors
Power Trnsistors -. Power Trnsistors Trnsistors for Audio Amplifier Trnsistors for Switch Mode Power Supply Trnsistors for Humidifier Trnsistor for Disply Horizontl Deflection Output Drlington Trnsistors
Directly Modulated DFB Laser Module for Wireless Communications
Directly Modulated DFB Laser Module for Wireless Communications Applications Wideband wireless communications High frequency analog transmission DWDM transmission CWDM transmission Product Type: Descriptions
Power Inductor 125 CDRH Series
CDRH Series Features Magnetically shielded construction Storage temperature range: - ~+ Operating temperature range: - ~+ (including coil s self-heat) RoHS Compliance and Halogen Free Qualification to
Characterization Report
Characterization Report RF Coaxial Cable Assemblies Raw Cable Type: Temp-Flex 047-2801 RF047-11SP9-11SP9-0305 Test Date: 10 Dec. 2014 RF047-11RP9-11RP9-0305 Test Date: 13 Oct. 2014 RF047-01SP1-01SP1-0305
Register your product and get support at PPX 4150 GR Ο
Register your product and get support at www.philips.com/welcome PPX 4150 GR Ο μ Α π π...3 μ...3 μ π...3...4 Ε...4...4 Επ...5...6 μ...6...6 μ...6 μ...7 μ μ...7...8 Ε...8 / μπ...8...8 μ π...9 μ HDMI...9...9
icontrol r Ολοκληρωμένο σύστημα ελέγχου
icontrol r Ολοκληρωμένο σύστημα ελέγχου Στάνταρ σύστημα για πιστόλια ψεκασμού Sure Coatr, Versa-Sprayr και Tribomaticr Εγχειρίδιο υλικού Greek Έκδοση 04/05 Αυτό το έγγραφο είναι διαθέσιμο στο Internet
SAMSUNG ELECTRONICS CO., LTD TEST REPORT SAMSUNG ELECTRONICS CO., LTD. 1, Samsung-Ro, Giheung-Gu, Yongin-Si, Gyeonggi-Do 17113, Korea
SAMSUNG ELECTRONICS CO., LTD TEST REPORT Prepared For: SAMSUNG ELECTRONICS CO., LTD 1, Samsung-Ro, Giheung-Gu, Yongin-Si, Gyeonggi-Do 17113, Korea Product Name: LED Model Number: SPMWHX1228FXXXXXXXX Prepared
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
2005 Samsung Electronics Co., Ltd. Με την επιφύλαξη παντός δικαιώµατος. Το παρόν εγχειρίδιο διατίθεται µόνο για ενηµερωτικούς σκοπούς.
2005 Samsung Electronics Co., Ltd. Με την επιφύλαξη παντός δικαιώµατος. Το παρόν εγχειρίδιο διατίθεται µόνο για ενηµερωτικούς σκοπούς. Όλες οι πληροφορίες που περιλαµβάνονται σε αυτό υπόκεινται σε αλλαγές
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
Axial Leaded Power Inductor. TIA0204/0307/0410 Series. Features. Applications. Color Coding
Axial Leaded Power Inductor Axial Leaded Power Inductor Features Design to be compact, small and light-weight Wide range of inductance Contribute to be high and self-resonant frequency Tapping type for
38BXCS STANDARD RACK MODEL. DCS Input/Output Relay Card Series MODEL & SUFFIX CODE SELECTION 38BXCS INSTALLATION ORDERING INFORMATION RELATED PRODUCTS
DCS Input/Output Relay Card Series STANDARD RACK MODEL 38BXCS MODEL & SUFFIX CODE SELECTION 38BXCS MODEL CONNECTOR Y1 :Yokogawa KS2 cable use Y2 :Yokogawa KS9 cable use Y6 :Yokogawa FA-M3/F3XD32-3N use
ddupont Fluorochemicals
Technical Information T-23 ENG ddupont Fluorochemicals Thermodynamic Properties of HFC-23 (trifluoromethane) DuPont Product Names: Freon 23 Thermodynamic Properties of HFC-23 Refrigerant (trifluoromethane)
Safety Barriers. 6 Safety Barriers KP00 III en Preferred products in stock or available at short notice
5-- KP III en Contents Single-Channel INTRINSPAK 9 8 Dual-Channel INTRINSPAK 9 with Electronic Current Limitation INTRINSPAK 94 You will find further information on the Internet www.stahl.de General Information
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
EXPERTS IN HEALTHCARE
EXPERTS IN HEALTHCARE ΕΠΕΙΔΗ ΟΙ ΑΣΘΕΝΕΙΣ ΣΑΣ ΑΞΙΖΟΥΝ ΤΑ ΚΑΛΥΤΕΡΑ. Όταν θέλετε να προσφέρετε μία ανώτερη υπηρεσία υγείας, δεν υπάρχει χώρος για λάθη. Η υγεία των ασθενών σας βασίζεται και στο σωστό προγραμματισμό
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
FEATURE EXPANSION BOARD TYPE 2018 B658 PARTS LOCATION AND LIST
FEATURE EXPANSION BOARD TYPE 2018 B658 PARTS LOCATION AND LIST This section instructs you as to the numbers and names of parts on this machine. 1.RA2K Expansion Unit 1 (B658) Rev. 08/04/2004 B658 2 Parts
2SA1204 2SC2884 ( ) *2SA2069 *2SC5819 ( ) 2SA1203 2SC2883 ( ) 2SA1869 2SC4935 ( ) (15V) *2SC5703 ( ) *2SC5713 ( )
Power Transistors Power Transistors 218 Power Amps 224 POWER-MOLD transistors (SC-63/64) 225 PW-MINI Transisters (SC-62) 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) 227
Smaller. 6.3 to 100 After 1 minute's application of rated voltage at 20 C, leakage current is. not more than 0.03CV or 4 (µa), whichever is greater.
Low Impedance, For Switching Power Supplies Low impedance and high reliability withstanding 5000 hours load life at +05 C (3000 / 2000 hours for smaller case sizes as specified below). Capacitance ranges
Σύγχρονες Εφαρμογές Τεχνολογιών της Πληροφορίας και των Επικοινωνιών
Σύγχρονες Εφαρμογές Τεχνολογιών της Πληροφορίας και των Επικοινωνιών Ενότητα 2: Η αξιολόγηση PISA Διδάσκων: Νικόλαος Τσέλιος Τμήμα Επιστημών της Εκπαίδευσης και της Αγωγής στην Προσχολική Ηλικία Σημείωμα
Δομοστατικός Σχεδιασμός Υψηλών Κτηρίων
ΕΘΝΙΚΟ ΜΕΤΣΟΒΙΟ ΠΟΛΥΤΕΧΝΕΙΟ ΣΧΟΛΗ ΠΟΛΙΤΙΚΩΝ ΜΗΧΑΝΙΚΩΝ ΕΡΓΑΣΤΗΡΙΟ ΜΕΤΑΛΛΙΚΩΝ ΚΑΤΑΣΚΕΥΩΝ Δομοστατικός Σχεδιασμός Υψηλών Κτηρίων Αβαρικιώτη Γεωργία Μπαχλαβάς Εμμανουήλ Επιβλέποντες: Ι. Βάγιας Φ. Καρυδάκης
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
GPS SAW. GPS Front End Module. GPS Xtal GPS GLONASS GALILEO BEIDOU GPS GLONASS GALILEO BEIDOU GPS GLONASS GALILEO BEIDOU. Insertion Loss (db)
GPS SAW GPS GLONASS GALILEO BEIDOU Band Width TA1804A 1582.469 1.1 46.834 1.1X0.9 TA1954A (GPS+GLONASS+COMPASS) 1582.47 1.2 46.84 1.1X0.9 TA1425A (GPS band) 1574.42 0.8 2 1.4x1.1 TA0757B (GPS band) 1575.42
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
BIPOLAR transistors and special FUnCtions diodes.com
BIPOLAR transistors andspecial FUnCtions diodes.com THE LEADING EDGE... BIPOLAR TRANSISTORS COMPANy OVERVIEW DIODES INCORPORATED S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF ExISTING
Microelectronic Circuit Design Third Edition - Part I Solutions to Exercises
Microelectronic Circuit Design Third Edition - Part I Solutions to Exercises Page 11 CHAPTER 1 V LSB 5.1V 10 bits 5.1V 104bits 5.00 mv V 5.1V MSB.560V 1100010001 9 + 8 + 4 + 0 785 10 V O 786 5.00mV or
SOLID-CORE PORCEL AIN
SALES OICES NGKLOCKE, INC. (BALTIMORE OICE) 2525 Insulator Drive, Baltimore Maryland 21230 U.S.A Tel : (410) 3471700 ax : (410) 3471724 SOLIDCORE PORCEL AIN L I N E P O ST I N S U L ATO R S NGKLOCKE, INC.
T1/CEPT/ISDN-Pri Transformers
IRELESS I sales@eddywireless.com T//ISDN-Pri Transformers Dual SMT package Isolation voltage: 00 Vrms For - part add suffix NLE For - part add suffix NL For detail of Compliance,please refer to Page 00//EC
CMPTER 2.92MM CONNECTORS. ... A Vital Part of Connection World. Receptacles With Accepts Pin Receptacles, Metal Through The Wall
... A Vital Part of Connection World Receptacles With Accepts Pin Receptacles, Metal Through The Wall Receptacles, Insulator Through The Wall Receptacles, Air ine Through The Wall PCB Connectors 2.92MM
SMALL SIGNAL DISCRETE SEMICONDUCTORS
election uide and Cross Reference Linear Integrated ystems MALL INAL ICRETE EMICONUCTOR JFETs MO witches BJTs MOFETs Linear Integrated ystems 0 Clipper Court Fremont, CA 98 www.linearsystems.com Tel: 0
Photomultiplier Tube Assemblies
hotomultiplier Tube Assemblies hotomultiplier Tube Assemblies hotomultiplier tube assemblies are made up of a photomultiplier tube, a voltagedivider circuit and other components, all integrated into a
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
![C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]](/thumbs/90/101883046.jpg "C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]")
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
Frequency (MHz) Insertion Loss (db)
GPS SAW GPS GLONASS GALILEO BEIDOU TA04A TA54A (GPS+GLONASS+COMPASS) TA45A (GPS band) TA05B (GPS band) TA4A (GPS+GLONASS+GALILEO+BEIDOU) TA4B (GPS+GLONASS+GALILEO+BEIDOU) TAA (GPS+GLONASS+GALILEO+BEIDOU)
NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db
LAN ISOLATION TRANSFORMER CATALOG
LAN ISOLATION TRANSFORMER CATALOG TABLE of CONTENTS ISOLATION TRANSFORMERS 10BASE-T FOR ADAPTER CARDS, MAUs, HUBS AND MOTHERBOARD APPLICATIONS Electrical Specifications: Surface Mount and Through Hole................................
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
Bluetooth / WLAN / WiFi Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25/6.25 mm. Pulse Part Number W3008, W3008C
W8 Datasheet version.7. ceramic antenna. (/) Ground cleared under antenna, clearance area 4. x 4.5/6.5 mm. Pulse Part Number W8, W8C Features - Omni directional radiation - Low profile - Compact size W
AppleCare Technical Support Όροι και Προϋποθέσεις
AppleCare Technical Support Όροι και Προϋποθέσεις ΤΟ ΦΥΣΙΚΟ Ή ΝΟΜΙΚΟ ΠΡΟΣΩΠΟ ("ΠΕΛΑΤΗΣ") ΤΟ ΟΠΟΙΟ ΑΠΕΥΘΥΝΕΤΑΙ ΣΤΗΝ APPLE ΓΙΑ ΥΠΗΡΕΣΙΕΣ ΥΠΟΣΤΗΡΙΞΗΣ ΠΟΥ ΠΡΟΣΦΕΡΟΝΤΑΙ ΒΑΣΕΙ ΤΟΥ ΠΡΟΓΡΑΜΜΑΤΟΣ SERVICE PLAN ΤΟ
FOR CONNECTING PC BOARD TO PC BOARD
FOR ONNETIN P BOR TO P BOR FN-2(H) SERIES (SUPPORTS HIH-SPEE SINLS) FETURES round contacts are between rows of signal terminals and the connector is covered with a metal ground shell, for impedance matching
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
simple video door entry system
simple video door entry system 3,5 έγχρωμη οθόνη 4 ασπρόμαυρη οθόνη Πλήκτρο για το άνοιγμα της πόρτας Αυτόκληση ή Άλλες υπηρεσίες - εντολές Κλήση σε κονσόλα θυρωρού ή Άλλες πρόσθετες υπηρεσίες εντολές
C H Activation of Cp* Ligand Coordinated to Ruthenium. Center: Synthesis and Reactivity of a Thiolate-Bridged
Supporting Information C H Activation of Cp* Ligand Coordinated to Ruthenium Center: Synthesis and Reactivity of a Thiolate-Bridged Diruthenium Complex Featuring Fulvene-like Cp* Ligand Xiaoxiao Ji, Dawei
simple video door entry system 3mm. ΤΟ ΜΕΤΡΟ ΤΗΣ ΚΟΜΨΟΤΗΤΑΣ
simple video door entry system mm. ΤΟ ΜΕΤΡΟ ΤΗΣ ΚΟΜΨΟΤΗΤΑΣ ΜΙΚΡΗ ΔΙΑΣΤΑΣΗ, ΜΕΓΙΣΤΗ ΑΠΟΔΟΣΗ Έχουμε παραλείψει τις υπερβολές. Όλη τη τεχνολογία που χρειάζεστε, μπορεί τώρα να συμπυκνωθεί σε μόλις χιλιοστά.
0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance
.635mm Pitch Board to Board Docking Connector Lead-Free Compliance MINIDOCK SERIES MINIDOCK SERIES Features Specifications Application.635mm Pitch Connector protected by Diecasted Zinc Alloy Metal Shell
Part Numbering. Chip Ferrite Bead for Automotive. D q. (Part Number)
Chip Ferrite Bead for Automotive ing () BL M 18 AG 2 S Z 1 D q w e r t y u i o qproduct ID Product ID BL Chip Ferrite Beads timpedance Expressed by three figures. The unit is in ohm (Ω) at MHz. The first
REAL-TIME CLOCKS MIXED-SIGNAL DESIGN GUIDE. Data Sheets Applications Notes Free Samples. DS32kHz
REAL-TIME CLOCKS MIXED-SIGNAL DESIGN GUIDE Data Sheets Applications Notes Free Samples DS32kHz TCXO 32.768kHz Dallas Semiconductor RTC RTC IC X1 DS32kHz 32kHz 4 1 DS32kHz 1998 RTC (V) SRAM 32kHz DS1500
! " # $ &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 #! - (#* 2 3( 4* 2 (* 2 5!! 3 ( * (7 4* 2 #8 (# * 9 : (* 9
"# " # $ "%%" & '" (' )' * & + (' )' * &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 # - (#* 2 # - (#* 2 3( 4* 2 (* 2 5 3 ( * 2 6 3 (7 4* 2 #8 (# * 9 : (* 9 #" " 5,1 < = " = #+ +# 9 ' :> # &? + # & ISD i " @
NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors
Precision Metal Film Fixed Resistor Axial Leaded
Features EIA standard colour-coding Non-Flame type available Low noise and voltage coefficient Low temperature coefficient range Wide precision range in small package Too low or too high ohmic value can
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
M5667. www.fisher-price.gr
M5667 Κρατήστε αυτές τις οδηγίες για μελλοντική χρήση, καθώς περιέχουν σημαντικές πληροφορίες. Η τοποθέτηση των μπαταριών να γίνεται από ενήλικα. Εργαλείο για τη συναρμολόγηση: σταυροκατσάβιδο (δεν περιλαμβάνεται).
SD57045 RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
AERO 20 AERO
www.nilfisk-alto.com AERO 20 AERO 25 302002328-2008-05-21 ΕΛΛΗΝΙΚA - Οδηγίες λειτουργίας IΣημαντικές υποδείξεις ασφάλειας Πριν να θέσετε σε λειτουργία τη συσκευή, διαβάστε οπωσδήποτε τις οδηγίες λειτουργίας
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
Cite as: Pol Antras, course materials for International Economics I, Spring MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts
/ / σ/σ σ/σ θ θ θ θ y 1 0.75 0.5 0.25 0 0 0.5 1 1.5 2 θ θ θ x θ θ Φ θ Φ θ Φ π θ /Φ γφ /θ σ θ π θ Φ θ θ Φ θ θ θ θ σ θ / Φ θ θ / Φ / θ / θ Normalized import share: (Xni / Xn) / (XII / XI) 1 0.1 0.01 0.001
RC series Thick Film Chip Resistor
RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped